CN204434268U - A kind of encapsulating structure of MEMS inertial sensor - Google Patents
A kind of encapsulating structure of MEMS inertial sensor Download PDFInfo
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- CN204434268U CN204434268U CN201420842783.3U CN201420842783U CN204434268U CN 204434268 U CN204434268 U CN 204434268U CN 201420842783 U CN201420842783 U CN 201420842783U CN 204434268 U CN204434268 U CN 204434268U
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- inertial sensor
- pcb board
- pad
- sealing cap
- mems inertial
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- 238000007789 sealing Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Micromachines (AREA)
- Pressure Sensors (AREA)
- Gyroscopes (AREA)
Abstract
The utility model relates to a kind of encapsulating structure of MEMS inertial sensor, comprising: MEMS inertial sensor chip and pcb board; MEMS inertial sensor chip comprises: substrate; Be positioned at the inertia sensitive structure of substrate face; Be positioned at the inertial sensor pad of substrate face; And sealing cap; Sealing cap is connected with substrate to form a sealed cavity structure, and inertia sensitive structure is positioned at sealed cavity inside configuration, and inertial sensor pad is exposed to sealed cavity structural outer; Wherein, MEMS inertial sensor flip-chip is on pcb board, and pcb board is provided with pcb board pad in the position of corresponding inertial sensor pad, and sealing cap and pcb board are adhesively fixed, and inertial sensor pad is electrically connected with pcb board pad.This packaged type of the utility model at utmost can reduce the demand of bonding technology to area, therefore at utmost can reduce the final size of inertial sensor product, technique is also easily implemented simultaneously.
Description
Technical field
The present invention relates to a kind of encapsulating structure of MEMS inertial sensor.
Background technology
Microelectromechanical systems (Micro Electro Mechanical System), being called for short MEMS, is the emerge science technology integrating micromachine, microsensor, microactrator, signal transacting, Based Intelligent Control grown up on microelectric technique basis.Wherein, MEMS inertial sensor comprises acceleration transducer, angular-rate sensor, IMU Inertial Measurement Unit, attitude heading reference system etc.
The trend of the Electronic Packaging of current MEMS is to faster, less, more cheap future development, minification is gone back while requiring to increase performance, when existing MEMS inertial sensor nude film (MEMSDIE) carries out surface mount, the mode of general employing wire bonding realizes the electrical connection with pcb board, and then the making of product is realized through packaging technology, reference as depicted in figs. 1 and 2, wherein the bottom of MEMS inertial sensor nude film 3 is bonded and fixed on pcb board 1 by adhesives 2, the pad 5 of inertial sensor is electrically connected and then realizes the connection with external circuit by lead-in wire 4 with the pad 6 of pcb board.
As adopted wire bonding that larger space can be taken in this encapsulation implementation of Fig. 1 and 2, be therefore unfavorable for the further reduction of inertial sensor final products.
Utility model content
The purpose of this utility model is that proposing a kind of size reduces and the encapsulating structure of the MEMS inertial sensor of dependable performance, and concrete technical scheme is as follows:
An encapsulating structure for MEMS inertial sensor, comprising: MEMS inertial sensor chip and pcb board; Described MEMS inertial sensor chip comprises: substrate; Be positioned at the inertia sensitive structure of described substrate face; Be positioned at the inertial sensor pad of described substrate face; And sealing cap; Described sealing cap is connected with described substrate to form a sealed cavity structure, and described inertia sensitive structure is positioned at described sealed cavity inside configuration, and described inertial sensor pad is exposed to described sealed cavity structural outer; Wherein, described MEMS inertial sensor flip-chip is on described pcb board, described pcb board is just being provided with pcb board pad to the position of described inertial sensor pad, and described sealing cap and described pcb board are adhesively fixed, and described inertial sensor pad is electrically connected with described pcb board pad.
Further preferred technical scheme, described sealing cap higher than described inertial sensor pad, with the MEMS inertial sensor chip of forming station scalariform.
Preferred technical scheme further, described pcb board offers groove in the position of the described sealing cap of correspondence, and described sealing cap is partially submerged in described groove, and it is outside that described pcb board pad is positioned at described groove.
Preferred technical scheme further, the edge of described sealing cap and described substrate bonding are to form described sealed cavity structure.
Preferred technical scheme further, described substrate and described sealing cap are silicon chip, and both are by high-temperature process Direct Bonding.
Preferred technical scheme further, described sealing cap is silicon chip sealing cap or glass sealing cap.
Preferred technical scheme further, described inertial sensor pad place is prefabricated with solder bump.
Preferred technical scheme further, described pcb board pad place is prefabricated with solder bump.
Preferred technical scheme further, by conductive solder or conducting resinl electrical connection between described inertial sensor pad and described pcb board pad.
Preferred technical scheme further, the gap place do not connected between described MEMS inertial sensor chip and described pcb board is filled with non-conductive adhesive.
The encapsulating structure of the utility model MEMS inertial sensor; special design sealing cap protection inertia sensitive structure also realizes smooth chip surface; MEMS inertial sensor flip-chip is on pcb board; inertial sensor pad and pcb board pad are just to being directly electrically connected; sealing cap and pcb board are adhesively fixed simultaneously; this packaged type at utmost can reduce the demand of bonding technology to area; therefore at utmost can reduce the final size of inertial sensor product, technique also easily be implemented simultaneously.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure of existing MEMS inertial sensor chip and pcb board.
Fig. 2 is the top view of Fig. 1.
Fig. 3 is the structural representation of the utility model MEMS inertial sensor chip.
The packaged type that Fig. 4 is the inertial sensor chip of MEMS shown in Fig. 3 and pcb board.
Fig. 5 is the top view of Fig. 4.
The another kind of packaged type that Fig. 6 is the inertial sensor chip of MEMS shown in Fig. 3 and pcb board.
Fig. 7 is the top view of Fig. 6.
Detailed description of the invention
Be described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
With reference to figure 4 and the first packaged type that Figure 5 shows that MEMS inertial sensor chip and pcb board:
Wherein, the concrete structure of MEMS inertial sensor chip 3, with reference to shown in figure 3, comprises substrate 31, inertia sensitive structure 32, sealing cap 33, inertial sensor pad 5.Wherein inertia sensitive structure 32, sealing cap 33, inertial sensor pad 5 are all positioned at the front of substrate 31, the edge of sealing cap 33 and substrate 31 bonding are to form a sealed cavity structure 34, it is inner that inertia sensitive structure 32 is positioned at sealed cavity structure 34, and inertial sensor pad 5 is exposed to the outside of sealed cavity structure 34.As can be seen from Figure 3, sealing cap 33 can be made obviously to exceed inertial sensor pad 5, with the MEMS inertial sensor chip of forming station scalariform.Wherein, in one embodiment, substrate 31 and sealing cap 33 are silicon chip, and both can pass through high-temperature process Direct Bonding.In another embodiment, sealing cap 33 can also be glass sealing cap, and substrate 31 and sealing cap 33 carry out bonding by heating, making alive or plus-pressure between the two.The bonded interface of substrate 31 and sealing cap 33 has good air-tightness and long-time stability.
MEMS inertial sensor chip 3 adopts sealing cap 33 to seal and protects inertia sensitive structure 32; avoid inertial sensor chip by the impact of the temperature of external environment condition, impurity and physical force; also achieve the electrical isolation with external environment condition simultaneously, optimize properties of product.
The upside-down mounting of MEMS inertial sensor chip 3 is on pcb board 1, pcb board 1 is provided with pcb board pad 6 in the position of corresponding inertial sensor pad 5, inertial sensor pad 5 and pcb board pad 6 are just to being directly electrically connected, and the sealing cap 33 of MEMS inertial sensor chip 3 is bonded and fixed on pcb board 1 by adhesives 2 simultaneously.
With reference to figure 6 and the second packaged type that Figure 7 shows that MEMS inertial sensor chip and pcb board, be with the difference of the first packaged type: pcb board 1 offers groove 9 in the position of corresponding sealing cap 33, sealing cap 33 is partially submerged in groove 9, and pcb board pad 6 is positioned at the outside of groove 9.
Above two kinds of packaged types, first adopt sealing cap to realize smooth chip surface, then by chip front side down towards pcb board, chip with pcb board needs the place be electrically connected aim to form the shortest circuit, without the need to wire bonding, reduce package dimension and can also be apt to electric property simultaneously.
Wherein, electrical connection can be realized by conductive solder 7 between inertial sensor pad 5 and pcb board pad 6, such as at the prefabricated solder bump in inertial sensor pad 5 place and pcb board pad 6 place, then reflow soldering process welding is adopted, to ensure inertial sensor chip and extraneous effective electrical connection.Also electrical connection can be realized by conducting resinl between the two.
Wherein, the gap place 8 do not connected between MEMS inertial sensor chip 3 and pcb board 1 is filled with non-conductive adhesive, to strengthen the intensity of inertial sensor packaging structure further.
The encapsulating structure of the utility model MEMS inertial sensor; special design sealing cap protection inertia sensitive structure also realizes smooth chip surface; MEMS inertial sensor flip-chip is on pcb board; inertial sensor pad and pcb board pad are just to being directly electrically connected; sealing cap and pcb board are adhesively fixed simultaneously; this packaged type at utmost can reduce the demand of bonding technology to area; therefore at utmost can reduce the final size of inertial sensor product, technique also easily be implemented simultaneously.
Structure of the present utility model, feature and action effect is described in detail above according to graphic shown embodiment; these are only preferred embodiment of the present utility model; but the utility model does not limit practical range with shown in drawing; every change done according to conception of the present utility model; or be revised as the Equivalent embodiments of equivalent variations; do not exceed yet description with diagram contain spiritual time, all should in protection domain of the present utility model.
Claims (10)
1. an encapsulating structure for MEMS inertial sensor, is characterized in that, comprising: MEMS inertial sensor chip and pcb board; Described MEMS inertial sensor chip comprises: substrate; Be positioned at the inertia sensitive structure of described substrate face; Be positioned at the inertial sensor pad of described substrate face; And sealing cap; Described sealing cap is connected with described substrate to form a sealed cavity structure, and described inertia sensitive structure is positioned at described sealed cavity inside configuration, and described inertial sensor pad is exposed to described sealed cavity structural outer; Wherein, described MEMS inertial sensor flip-chip is on described pcb board, described pcb board is just being provided with pcb board pad to the position of described inertial sensor pad, and described sealing cap and described pcb board are adhesively fixed, and described inertial sensor pad is electrically connected with described pcb board pad.
2. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: described sealing cap higher than described inertial sensor pad, with the MEMS inertial sensor chip of forming station scalariform.
3. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: described pcb board offers groove in the position of the described sealing cap of correspondence, described sealing cap is partially submerged in described groove, and it is outside that described pcb board pad is positioned at described groove.
4. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: the edge of described sealing cap and described substrate bonding are to form described sealed cavity structure.
5. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 4, it is characterized in that: described substrate and described sealing cap are silicon chip, both are by high-temperature process Direct Bonding.
6. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that, described sealing cap is silicon chip sealing cap or glass sealing cap.
7. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: described inertial sensor pad place is prefabricated with solder bump.
8. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: described pcb board pad place is prefabricated with solder bump.
9. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: by conductive solder or conducting resinl electrical connection between described inertial sensor pad and described pcb board pad.
10. the encapsulating structure of a kind of MEMS inertial sensor as claimed in claim 1, it is characterized in that: the gap place do not connected between described MEMS inertial sensor chip and described pcb board is filled with non-conductive adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420842783.3U CN204434268U (en) | 2014-12-25 | 2014-12-25 | A kind of encapsulating structure of MEMS inertial sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420842783.3U CN204434268U (en) | 2014-12-25 | 2014-12-25 | A kind of encapsulating structure of MEMS inertial sensor |
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| Publication Number | Publication Date |
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| CN204434268U true CN204434268U (en) | 2015-07-01 |
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| CN201420842783.3U Active CN204434268U (en) | 2014-12-25 | 2014-12-25 | A kind of encapsulating structure of MEMS inertial sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107612226A (en) * | 2017-10-31 | 2018-01-19 | 珠海格力电器股份有限公司 | Surface mounting structure, surface mount method, motor and surface mount chip |
| CN109626318A (en) * | 2018-12-21 | 2019-04-16 | 中国科学院半导体研究所 | Covering plate structure and preparation method thereof, capacitance type sensor |
| WO2022012476A1 (en) * | 2020-07-14 | 2022-01-20 | 中芯集成电路（宁波）有限公司上海分公司 | Wafer level packaging method and package structure of mems device |
-
2014
- 2014-12-25 CN CN201420842783.3U patent/CN204434268U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107612226A (en) * | 2017-10-31 | 2018-01-19 | 珠海格力电器股份有限公司 | Surface mounting structure, surface mount method, motor and surface mount chip |
| CN107612226B (en) * | 2017-10-31 | 2024-05-03 | 珠海格力电器股份有限公司 | Surface mounting structure, surface mounting method, motor and surface mounting chip |
| CN109626318A (en) * | 2018-12-21 | 2019-04-16 | 中国科学院半导体研究所 | Covering plate structure and preparation method thereof, capacitance type sensor |
| WO2022012476A1 (en) * | 2020-07-14 | 2022-01-20 | 中芯集成电路（宁波）有限公司上海分公司 | Wafer level packaging method and package structure of mems device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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| TR01 | Transfer of patent right |
Effective date of registration: 20200615 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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| TR01 | Transfer of patent right |