CN203365462U - High-reliability acceleration sensor - Google Patents
High-reliability acceleration sensor Download PDFInfo
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- CN203365462U CN203365462U CN 201320459800 CN201320459800U CN203365462U CN 203365462 U CN203365462 U CN 203365462U CN 201320459800 CN201320459800 CN 201320459800 CN 201320459800 U CN201320459800 U CN 201320459800U CN 203365462 U CN203365462 U CN 203365462U
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- acceleration
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Abstract
The utility model discloses a high-reliability acceleration sensor comprising an MEMS acceleration chip, a signal processing chip and a substrate. The MEMS acceleration chip comprises a cover body, a micromechanical system and a circuit substrate, the micromechanical system comprises an X-axis acceleration induction zone, a Y-axis acceleration induction zone and a Z-axis acceleration induction zone, the Y-axis acceleration induction zone comprises a Y-direction H-shaped mobile sheet provided with two through holes, two Y-direction mobile electrodes and two Y-direction fixed electrodes, and the Z-axis acceleration induction zone comprises a mass bar and a supporting shaft. The lower surface of the signal processing chip is attached to the surface of the cover body of the MEMS acceleration chip via a first insulation adhesive layer, the surface of the circuit substrate of the MEMS acceleration chip is attached to a part of the substrate via a second insulation adhesive layer, first metal wires are bridged between chip welding points and signal input welding points, and second metal wires are bridged between signal output welding points and substrate welding points. The high-reliability acceleration sensor improves the reliability of a device and effectively reduces stress damage of external force to the chip.
Description
Technical field
The utility model relates to the acceleration transducer technical field, is specifically related to a kind of high reliability acceleration transducer.
Background technology
Micro electro-mechanical systems acceleration sensor is because volume is little, quality is light, cost is low, high reliability receives much concern, and the Aero-Space that especially have high requirements in the volume to device, quality and reliability and weapons scientific domain have very large application prospect.The research development in recent years of acceleration transducer is rapid, and the high-range acceleration transducer of various performances, range is own through in succession reporting.But acceleration transducer is very high to anti high overload ability and natural frequency requirement, and generally the anti high overload Capability Requirement can bear a hundreds of thousands range shock load, and natural frequency requires up to tens kHz, kHz even up to a hundred.Therefore, in application, the MEMS high-range acceleration transducer usually causes structural failure because the anti high overload ability is poor.For guaranteeing the reliability of MEMS high-range acceleration transducer when applying, it is particularly important that the encapsulation of MEMS high-range acceleration transducer just seems.Practice shows, existing sensor package technology ubiquity anti high overload ability, the problem that natural frequency is low and package reliability is poor, adopt MEMS high-range acceleration transducer after existing sensor package technology encapsulation when running into severe applied environment, often occur that shell breaks, cover plate depression, chip from the shell substrate come off, the problem such as wire breaking.Based on this, be necessary to invent a kind of high reliability acceleration transducer, to guarantee the reliability of acceleration transducer when applying.
Summary of the invention
The utility model purpose is to provide a kind of high reliability acceleration transducer, and this acceleration transducer has improved the reliability of device and effectively reduced the stress damage of external force to chip.
For achieving the above object, the technical solution adopted in the utility model is: a kind of high reliability acceleration transducer, comprise MEMS acceleration chip, be used for the signal processing chip and the substrate that filter undesired signal and process induced signal, described MEMS acceleration chip is by lid, micro mechanical system and for generation of the circuit substrate of induced signal, this micro mechanical system is by X-axis acceleration induction district, Y-axis acceleration induction district and the Z axis acceleration induction district composition moved for responding to extraneous Z axis, thereby described lid and circuit substrate edge are by the bonding annular seal space that forms of sealant layer, described micro mechanical system is positioned at annular seal space and at the circuit substrate upper surface, the height in sealing chamber is 45 ~ 55 μ m,
Described Y-axis acceleration induction district's orientation is vertical with the district's orientation of X-axis acceleration induction; Described Z axis acceleration induction district comprises the quality stick and, for supporting the back shaft at quality stick center, described quality stick is equipped with the Z axis induction electrode under two ends, and described quality stick is equipped with positive stop directly over two ends;
Described signal processing chip lower surface is bonding by the top surface of the first insulating gel adhesion coating and MEMS acceleration chip, the circuit substrate surface of this MEMS acceleration chip is bonding by the second insulating gel adhesion coating and substrate portion zone, circuit substrate and substrate upper surface separately have the substrate pad in several chip soldering contacts and several distribution substrate both sides of the edge districts, the signal processing chip upper surface has several signal input pads and signal output pad, this signal output pad is distributed in signal processing chip both sides of the edge district, some the first metal wires are connected across between described chip soldering contact and signal input pad, some the second metal wires that are distributed in both sides are connected across between described signal output pad and substrate pad.
In technique scheme, further improved plan is as follows:
1. in such scheme, the height of described annular seal space is 50 μ m.
2. in such scheme, described X-axis acceleration induction district and Y-axis acceleration induction district are positioned at a row, and described Z axis acceleration induction district and X-axis acceleration induction district and Y-axis acceleration induction district be arranged in parallel.
3. in such scheme, described substrate pad is offered the circuit substrate upper surface and is positioned at lid one side.
Because technique scheme is used, the utility model compared with prior art has following advantages and effect:
1. the utility model high reliability acceleration transducer, its signal processing chip lower surface is bonding by the top surface of the first insulating gel adhesion coating and MEMS acceleration chip, the circuit substrate surface of this MEMS acceleration chip is bonding by the second insulating gel adhesion coating and substrate portion zone, circuit substrate and substrate upper surface separately have the substrate pad in several chip soldering contacts and several distribution substrate both sides of the edge districts, the signal processing chip upper surface has several signal input pads and signal output pad, this signal output pad is distributed in signal processing chip both sides of the edge district, some the first metal wires are connected across between described chip soldering contact and signal input pad, some the second metal wires that are distributed in both sides are connected across between described signal output pad and substrate pad, package reliability is high, welding by the insulation glue-line effectively reduces the stress damage of external force to chip, arrange to design and can in minimum encapsulated space, carry out the welding of line in the position of pad, first makes the shorter cost of gold thread of line lower, next adopts the technique of threading in insulating gel can solve the problem of the routing bank shakiness of the high step difference opposite sex, improve the feasibility of product volume production.
2. the utility model high reliability acceleration transducer, its Z axis acceleration induction district comprises the quality stick and for supporting the back shaft at quality stick center, described quality stick is equipped with the Z axis induction electrode under two ends, described quality stick is equipped with positive stop directly over two ends, can effectively protect the mechanicalness damage of inner structure, the sensitivity aspect for induction improves a lot simultaneously.
3. the utility model high reliability acceleration transducer, its X-axis acceleration induction district and Y-axis acceleration induction district are positioned at a row, described Z axis acceleration induction district and X-axis acceleration induction district and Y-axis acceleration induction district be arranged in parallel, effectively reduce induction zone shared position in chip circuit, more having superiority aspect the feasibility of cost and encapsulation; Secondly, the substrate pad is offered the circuit substrate upper surface and is positioned at lid one side, is conducive to the difficulty that chip is arranged and reduced cutting and routing in encapsulation process.
The accompanying drawing explanation
Fig. 1 is the utility model high reliability acceleration sensor structure schematic diagram;
The left TV structure schematic diagram that Fig. 2 is accompanying drawing 1;
The structural representation of looking up that Fig. 3 is accompanying drawing 1;
Fig. 4 is the utility model MEMS acceleration chip structure schematic diagram;
Fig. 5 is the utility model micro mechanical system structural representation;
Fig. 6 is Z axis acceleration induction plot structure schematic diagram in the utility model acceleration transducer;
The structural representation of looking up that Fig. 7 is accompanying drawing 6.
In above accompanying drawing: 1, MEMS acceleration chip; 2, signal processing chip; 3, substrate; 4, lid; 5, micro mechanical system; 6, circuit substrate; 7, X-axis acceleration induction district; 8, Y-axis acceleration induction district; 9, Z axis acceleration induction district; 10, sealant layer; 11, annular seal space; 12, the first insulating gel adhesion coating; 13, the second insulating gel adhesion coating; 14, chip soldering contact; 15, substrate pad; 16, signal input pad; 17, signal output pad; 18, the first metal wire; 19, the second metal wire; 20, quality stick; 21, back shaft; 22, Z axis induction electrode; 23, positive stop.
Embodiment
Below in conjunction with embodiment, the utility model is further described:
Embodiment: a kind of high reliability acceleration transducer, comprise MEMS acceleration chip 1, be used for the signal processing chip 2 and the substrate 3 that filter undesired signal and process induced signal, described MEMS acceleration chip 1 is by lid 4, micro mechanical system 5 and for generation of the circuit substrate 6 of induced signal, this micro mechanical system 5 is by X-axis acceleration induction district 7, Y-axis acceleration induction district 8 and Z axis acceleration induction district 9 compositions for responding to extraneous Z axis motion, thereby described lid 4 and circuit substrate 6 edges are by the bonding annular seal space 11 that forms of sealant layer 10, described micro mechanical system 5 is positioned at annular seal space 11 and at circuit substrate 6 upper surfaces, the height in sealing chamber 11 is 45 ~ 55 μ m,
Described Y-axis acceleration induction district's orientation is vertical with the district's orientation of X-axis acceleration induction; Described Z axis acceleration induction district 9 comprises quality stick 20 and, for supporting the back shaft 21 at quality stick 20 centers, described quality stick is equipped with Z axis induction electrode 22 under 20 two ends, and described quality stick is equipped with positive stop 23 directly over 20 two ends;
Described signal processing chip 2 lower surfaces are lid 4 surface bindeds with MEMS acceleration chip 1 by the first insulating gel adhesion coating 12, circuit substrate 6 surfaces of this MEMS acceleration chip 1 are bonding with substrate 3 subregions by the second insulating gel adhesion coating 13, circuit substrate 6 and substrate 3 upper surface separately have the substrate pad 15 in several chip soldering contacts 14 and several distribution substrate 3 both sides of the edge districts, signal processing chip 2 upper surfaces have several signal input pads 16 and signal output pad 17, this signal output pad 17 is distributed in signal processing chip 2 both sides of the edge districts, some the first metal wires 18 are connected across between described chip soldering contact 14 and signal input pad 16, some the second metal wires 19 that are distributed in both sides are connected across between described signal output pad 17 and substrate pad 15.
The height of above-mentioned annular seal space 11 is 50 μ m.
Above-mentioned X-axis acceleration induction district 7 and Y-axis acceleration induction district 8 are positioned at a row, and described Z axis acceleration induction district 9 and X-axis acceleration induction district 7 and Y-axis acceleration induction district 8 be arranged in parallel.
Above-described embodiment is only explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the person skilled in the art can understand content of the present utility model and implement according to this, can not limit protection domain of the present utility model with this.All equivalences of doing according to the utility model Spirit Essence change or modify, within all should being encompassed in protection domain of the present utility model.
Claims (4)
1. a high reliability acceleration transducer, it is characterized in that: comprise MEMS acceleration chip (1), be used for the signal processing chip (2) and the substrate (3) that filter undesired signal and process induced signal, described MEMS acceleration chip (1) is by lid (4), micro mechanical system (5) and for generation of the circuit substrate (6) of induced signal, this micro mechanical system (5) is by X-axis acceleration induction district (7), Y-axis acceleration induction district (8) and Z axis acceleration induction district (9) composition moved for responding to extraneous Z axis, described lid (4) and circuit substrate (6) edge by sealant layer (10) thus the bonding annular seal space (11) that forms, described micro mechanical system (5) is positioned at annular seal space (11) and at circuit substrate (6) upper surface, the height in sealing chamber (11) is 45 ~ 55 μ m,
Described Y-axis acceleration induction district (8) is vertical with X-axis acceleration induction district (7) orientation; Described Z axis acceleration induction district (9) comprises quality stick (20) and for supporting the back shaft (21) at quality stick (20) center, described quality stick (20) is equipped with Z axis induction electrode (22) under two ends, and described quality stick (20) is equipped with positive stop (23) directly over two ends;
Described signal processing chip (2) lower surface is lid (4) surface binded with MEMS acceleration chip (1) by the first insulating gel adhesion coating (12), circuit substrate (6) surface of this MEMS acceleration chip (1) is bonding by the second insulating gel adhesion coating (13) and substrate (3) subregion, circuit substrate (6) and substrate (3) upper surface separately have the substrate pad (15) in several chip soldering contacts (14) and several distribution substrate (3) both sides of the edge districts, signal processing chip (2) upper surface has several signal input pads (16) and signal output pad (17), this signal output pad (17) is distributed in signal processing chip (2) both sides of the edge district, some the first metal wires (18) are connected across between described chip soldering contact (14) and signal input pad (16), some the second metal wires (19) that are distributed in both sides are connected across between described signal output pad (17) and substrate pad (15).
2. high reliability acceleration transducer according to claim 1, it is characterized in that: the height of described annular seal space (11) is 50 μ m.
3. high reliability acceleration transducer according to claim 1, it is characterized in that: described X-axis acceleration induction district (7) and Y-axis acceleration induction district (8) are positioned at a row, and described Z axis acceleration induction district (9) and X-axis acceleration induction district (7) and Y-axis acceleration induction district (8) be arranged in parallel.
4. high reliability acceleration transducer according to claim 1, it is characterized in that: described substrate pad (15) is offered circuit substrate (6) upper surface and is positioned at lid (4) one sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320459800 CN203365462U (en) | 2013-07-30 | 2013-07-30 | High-reliability acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320459800 CN203365462U (en) | 2013-07-30 | 2013-07-30 | High-reliability acceleration sensor |
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| Publication Number | Publication Date |
|---|---|
| CN203365462U true CN203365462U (en) | 2013-12-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320459800 Expired - Lifetime CN203365462U (en) | 2013-07-30 | 2013-07-30 | High-reliability acceleration sensor |
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| CN (1) | CN203365462U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371845A (en) * | 2015-12-17 | 2016-03-02 | 安徽寰智信息科技股份有限公司 | Inertia tracking module |
-
2013
- 2013-07-30 CN CN 201320459800 patent/CN203365462U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371845A (en) * | 2015-12-17 | 2016-03-02 | 安徽寰智信息科技股份有限公司 | Inertia tracking module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220902 Address after: 215125 room e0804, No. 388, Ruoshui Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee after: MiraMEMS Sensing Technology Co.,Ltd. Address before: Tong'an District Economic Development Zone Suzhou city Jiangsu province 215153 Tong Xi Road No. 31 Patentee before: SUZHOU GOODARK ELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215125 room e0804, No. 388, Ruoshui Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee after: Suzhou Mingyi Sensor Technology Co.,Ltd. Address before: 215125 room e0804, No. 388, Ruoshui Road, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: MiraMEMS Sensing Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131225 |
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| CX01 | Expiry of patent term |