CN205845941U - PIP encapsulating structure - Google Patents
PIP encapsulating structure Download PDFInfo
- Publication number
- CN205845941U CN205845941U CN201620712697.XU CN201620712697U CN205845941U CN 205845941 U CN205845941 U CN 205845941U CN 201620712697 U CN201620712697 U CN 201620712697U CN 205845941 U CN205845941 U CN 205845941U
- Authority
- CN
- China
- Prior art keywords
- encapsulating structure
- substrate
- chip
- pip
- model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 238000005538 encapsulation Methods 0.000 claims description 10
- 239000006071 cream Substances 0.000 claims description 5
- 238000004382 potting Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model discloses a kind of PIP encapsulating structure, it is characterised in that including: a substrate there is a relative end face and a bottom surface, described substrate top surface is provided with lead pad；One chip, is arranged at the top face of described substrate, and described chip lower surface is welded with stannum ball, is used for connecting described lead pad；It is filled with insulating resin in the encapsulated space of encapsulating structure.PIP encapsulating structure described in the utility model can be more than 200 μm in gap between control chip and substrate, so that resin is sufficient filling with, guarantee the requirement of package quality and reliability, and the potting resin that price can be used relatively low well solves problem of the prior art, has cost advantage.
Description
Technical field
This utility model belongs to chip encapsulation technology field, is specifically related to a kind of PIP encapsulating structure, and PIP is Package
In Package writes a Chinese character in simplified form, and is a kind of integrative packaging technology integrating encapsulation Advanced Idea.
Background technology
Existing similar face-down bonding encapsulation technology, is to use underfill (underfill) to the unit after Reflow Soldering
Device is directly put glue and is filled, and technique is complex.The shortcoming of this technique is: existing face-down bonding+underfill skill
Art, gluing process processing procedure be difficult to the gap below MCP is well filled, thus cause cavity cannot by letter resistance requirements.
Causing the reason to be: under fill underfill is directly to put glue below MCP, after some glue, glue plants ball from spilling over below MCP
In gap, not having external force to assist, the space under MCP cannot effectively be filled by glue, and be necessary to ensure that and will not encapsulate
Process and subsequent reflow weldering occur the MCP concentrating or causing due to the internal distortions of MCP due to internal stress and base
, even there is the fracture of stannum ball in the problem of plate contact.Mostly the MCP encapsulated introduced additionally, due to this type of packing forms is other envelope
The product of dress factory, its script internal stress state, and the material behavior after encapsulation may not obtain, and further increase encapsulation and set
The not confirmatory of meter.For this kind of product, have been found that when early stage is manufactured experimently its MCP can lift up song when again encapsulating.And
And due to the requirement of packaging cost, it is impossible to use high price but the more preferable potting resin of filling capacity.
Utility model content
The purpose of this utility model is to provide a kind of PIP encapsulating structure, can be more than in the gap between control chip and substrate
200 μm, so that resin is sufficient filling with, it is ensured that package quality and the requirement of reliability, and can use
The relatively low potting resin of price well solves problem of the prior art, has cost advantage.
For realizing above-mentioned utility model purpose, this utility model adopts the technical scheme that
A kind of PIP encapsulating structure, it is characterised in that including: a substrate that there is a relative end face and a bottom surface, described
Lead pad it is provided with on substrate top surface；One chip, is arranged at the top face of described substrate, and described chip lower surface is welded with
Stannum ball, is used for connecting described lead pad；It is filled with insulating resin in the encapsulated space of encapsulating structure.
Further, described chip is packaged bga chip.
Further, the spacing between described chip and substrate is more than 200 μm.
Further, described lead pad thickness is 10 ± 0 μm, and the tin cream model that described lead pad uses is
Qualitek 798LF。
Further, after the tin ball encapsulation, thickness is 150 ± 50 μm, and the model of the tin ball is SAC305.
Further, described substrate thickness is 130 ± 30 μm.
Further, described insulating resin model is G760L (max filler size 55um).
Beneficial effect:
PIP encapsulating structure described in the utility model has the advantage that compared to prior art
(1) encapsulating structure
This product is the most packaged bga chip of other reduced size, by the form again encapsulated, with stannum ball and base
The lead wire tray of plate upper face is welded, and is designed by base plate line and the sized package form of final demand, flexibly
Existing production interchange becomes the new product of other size, and odd jobs meet the need in consumer electronics product for packaging size
Ask, and well maintain packed device former function.
(2) take potting resin all spaces in device are effectively filled:
This product uses the closing resin of conventional BGA product, and non-special mold underfill type resin makes for right
Close the narrow gap formed under chip and carried out effective filling, preferable cost advantage can be kept.
(3) test of resin encapsulation process parameter and adjustment；
Resin encapsulation process parameter is adjusted and has been optimized, and technological parameter has injection molding to have use in 5 seconds in advance before starting
Vacuum pump is exhausted, to guarantee in injection molding without gas residue.
(4) particular design of SMT wire mark instrument
SMT steel mesh carried out particular design, accurately controlled prototype part and the stannum material in substrate welded disc in packaging well,
Guarantee chip is connected with the tin cream between substrate enough mechanical strengths.
(5) at the Pad of substrate, open design and the material of green paint select.
The gap that the dimensional fits of the welded disc of substrate comes between control chip and substrate to the control of the amount of SMT tin cream is more than
200um, in order to being sufficient filling with of plastic packaging material.
Accompanying drawing explanation
Fig. 1 is the structural representation of PIP encapsulating structure described in the utility model；
Wherein, 1, substrate；2, stannum ball；3, chip；4, insulating resin；5, lead pad.
Detailed description of the invention
Below in conjunction with accompanying drawing and preferred embodiment, the technical solution of the utility model is further described.
Embodiment:
As shown in Figure 1: a kind of PIP encapsulating structure disclosed in the present embodiment, including: a substrate 1, there is a relative top
Face and a bottom surface, described substrate 1 end face is provided with lead pad 5；One chip 3, is arranged at the top face of described substrate 1,
Described chip 3 lower surface is welded with stannum ball 2, is used for connecting described lead pad 5；It is filled with in the encapsulated space of encapsulating structure absolutely
Edge resin 4.
Further, described chip 3 is packaged bga chip.
Further, the spacing between described chip 3 and substrate 1 is more than 200 μm.
Further, described lead pad 5 thickness is 10 ± 0 μm, and the tin cream model that described lead pad uses is
Qualitek 798LF。
Further, after the tin ball 2 encapsulation, thickness is 150 ± 50 μm, and the model of the tin ball 2 is SAC305.
Further, described substrate 1 thickness is 130 ± 30 μm.
Further, described insulating resin model is G760L (max filler size 55um).
It is pointed out that as described above is only the preferred embodiment in order to explain this utility model, and attempt according to this
This utility model is made any restriction in form, therefore all have under identical practical spirit, made this practicality relevant newly
Any modification of type or change, all must be included in this utility model and be intended to the category of protection.
Claims (7)
1. a PIP encapsulating structure, it is characterised in that including a: substrate, has a relative end face and a bottom surface, described base
Lead pad it is provided with on plate top surface；One chip, is arranged at the top face of described substrate, and described chip lower surface is welded with stannum
Ball, is used for connecting described lead pad；It is filled with insulating resin in the encapsulated space of encapsulating structure.
PIP encapsulating structure the most according to claim 1, it is characterised in that described chip is packaged bga chip.
PIP encapsulating structure the most according to claim 1, it is characterised in that the spacing between described chip and substrate is more than
200μm。
PIP encapsulating structure the most according to claim 1, it is characterised in that described lead pad thickness is 10 ± 0 μm, institute
The tin cream model stating lead pad use is Qualitek 798LF.
PIP encapsulating structure the most according to claim 1, it is characterised in that after the tin ball encapsulation, thickness is 150 ± 50 μ
M, the model of the tin ball is SAC305.
PIP encapsulating structure the most according to claim 1, it is characterised in that described substrate thickness is 130 ± 30 μm.
PIP encapsulating structure the most according to claim 1, it is characterised in that described insulating resin model is G760L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620712697.XU CN205845941U (en) | 2016-07-07 | 2016-07-07 | PIP encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620712697.XU CN205845941U (en) | 2016-07-07 | 2016-07-07 | PIP encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205845941U true CN205845941U (en) | 2016-12-28 |
Family
ID=58151150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620712697.XU Active CN205845941U (en) | 2016-07-07 | 2016-07-07 | PIP encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205845941U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10418343B2 (en) | 2017-12-05 | 2019-09-17 | Infineon Technologies Ag | Package-in-package structure for semiconductor devices and methods of manufacture |
| CN111498791A (en) * | 2020-04-30 | 2020-08-07 | 青岛歌尔微电子研究院有限公司 | Micro-electro-mechanical system packaging structure and manufacturing method thereof |
-
2016
- 2016-07-07 CN CN201620712697.XU patent/CN205845941U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10418343B2 (en) | 2017-12-05 | 2019-09-17 | Infineon Technologies Ag | Package-in-package structure for semiconductor devices and methods of manufacture |
| US10861828B2 (en) | 2017-12-05 | 2020-12-08 | Infineon Technologies Ag | Molded semiconductor package having a package-in-package structure and methods of manufacturing thereof |
| CN111498791A (en) * | 2020-04-30 | 2020-08-07 | 青岛歌尔微电子研究院有限公司 | Micro-electro-mechanical system packaging structure and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 215000 33 Xinghai street, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee after: Yuancheng Technology (Suzhou) Co.,Ltd. Address before: 215000 33 Xinghai street, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Powertech Technology (Suzhou) Co.,Ltd. |
|
| CP03 | Change of name, title or address |