CN202855803U - 一种高导热led封装基板 - Google Patents

一种高导热led封装基板 Download PDF

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Publication number
CN202855803U
CN202855803U CN2012205658729U CN201220565872U CN202855803U CN 202855803 U CN202855803 U CN 202855803U CN 2012205658729 U CN2012205658729 U CN 2012205658729U CN 201220565872 U CN201220565872 U CN 201220565872U CN 202855803 U CN202855803 U CN 202855803U
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conductive
led
led chip
base plate
insulated substrate
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CN2012205658729U
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康孝恒
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SHENZHEN ZHIJIN ELECTRONICS CO Ltd
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SHENZHEN ZHIJIN ELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

本实用新型公开了一种高导热LED封装基板，其包括绝缘基板，所述绝缘基板的正面和背面均覆盖导电层，所述绝缘基板和导电层设有穿孔，导电针置于穿孔中，导电针的外表面与绝缘基板和导电层接触，还包括置于导电层上的线路层，LED芯片固定在导电针正上方的线路层上，且LED芯片通过两条导电线与另外两根导电针分别连接。本实用新型在绝缘基板和导电层中插入导电针后，提高了LED芯片的导热散热效率，提高了安装在LED芯片上的LED灯的使用寿命。

Description

一种高导热LED封装基板
技术领域
本实用新型涉及LED半导体技术领域，具体涉及一种高导热LED封装基板。 
背景技术
LED即是发光二极管，是一种能够将电能转化为可见光的固态的半导体器件，由于其具有体积小、耗电量低、使用寿命长、高亮度、环保等优点而被广泛应用。目前，大多数LED直接封装在一般树脂基板上。然而，随着LED高辉度化与高效率化发展，尤其是蓝光LED元件的发光效率获得大幅度改善，液晶、家电、汽车等广泛地应用LED，造成高功率LED的需要更加急迫。而高功率LED封装后的商品，使用时散发的热量较大，因此，开发导热效率高、散热快的LED封装基板成为当务之急。 
实用新型内容
本实用新型的目的在于克服上述现有技术的缺陷，提供一种高导热LED封装基板，其具有导热效率高、散热快的优点，特别适合用于安装高功率LED。 
为实现上述目的，本实用新型采用如下技术方案： 
一种高导热LED封装基板，其包括绝缘基板，所述绝缘基板的正面和背面均覆盖导电层，所述绝缘基板和导电层设有穿孔，导电针置于穿孔中，导电针的外表面与绝缘基板和导电层接触，还包括置于导电层上的线路层，LED芯片固定在导电针正上方的线路层上， 且LED芯片通过两条导电线与另外两根导电针分别连接。
优选地，导电针的直径与LED芯片的长度一致。 
优选地，所述绝缘基板为环氧树脂基板或BT树脂基板。 
优选地，所述绝缘基板的厚度为0.2－3.0mm。 
优选地，所述导电层的厚度为20－100μm。 
与现有技术相比，本实用新型的有益效果是： 
在绝缘基板和导电层中插入导电针后，LED芯片固定在导电针上方的线路层上， 且LED芯片通过两条导电线与另外两根导电针分别连接，从而提高了LED芯片的导热散热效率，提高了安装在LED芯片上的LED灯的使用寿命。
附图说明
图1为本实用新型一种高导热LED封装基板的结构示意图。 
具体实施方式
下面结合附图和具体实施例子对本实用新型一种高导热LED封装基板作进一步详细说明。 
请参照图1，本实用新型的高导热LED封装基板包括绝缘基板1，所述绝缘基板1的正面和背面均覆盖导电层2。所述绝缘基板1和导电层2设有穿孔（图未标注），导电针4置于穿孔中，导电针4的外表面与绝缘基板1和导电层2接触。本实用新型还包括置于导电层2上的线路层3，LED芯片5固定在导电针4正上方的线路层3上， 且LED芯片5通过两条导电线61、62与另外两根导电针分别连接。 
作为优选的实施方案，导电针4的直径与LED芯片5的长度一致，既能实现较高的导热散热效率，又能节约成本。 
作为优选的实施方案，所述绝缘基板1为环氧树脂或BT树脂基板。 
作为优选的实施方案，所述绝缘基板1的厚度为0.2－3.0mm 
作为优选的实施方案，所述导电层2的厚度为20－100μm。
上述实施例仅为本实用新型的优选实施方式，不能以此来限定本实用新型的保护范围，本领域的技术人员在本实用新型的基础上所做的任何非实质性的变化及替换均属于本实用新型的保护范围。 

Claims (5)

1.一种高导热LED封装基板，其特征在于：包括绝缘基板，所述绝缘基板的正面和背面均覆盖导电层，所述绝缘基板和导电层设有穿孔，导电针置于穿孔中，导电针的外表面与绝缘基板和导电层接触，还包括置于导电层上的线路层，LED芯片固定在导电针正上方的线路层上， 且LED芯片通过两条导电线与另外两根导电针分别连接。
2.如权利要求1所述的高导热LED封装基板，其特征在于：导电针的直径与LED芯片的长度一致。
3.如权利要求1所述的高导热LED封装基板，其特征在于：所述绝缘基板为环氧树脂基板或BT树脂基板。
4.如权利要求1所述的高导热LED封装基板，其特征在于：所述绝缘基板的厚度为0.2－3.0mm。
5.如权利要求1所述的高导热LED封装基板，其特征在于：所述导电层的厚度为20－100μm。
CN2012205658729U 2012-10-31 2012-10-31 一种高导热led封装基板 Expired - Lifetime CN202855803U (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105470218A (zh) * 2014-09-28 2016-04-06 德克萨斯仪器股份有限公司 用于热管理的背侧散热器的集成
CN106764607A (zh) * 2016-12-14 2017-05-31 安徽极光照明工程有限公司 一种高散热的led线性灯
CN108511578A (zh) * 2018-04-19 2018-09-07 庄明磊 一种led照明面板
CN108511579A (zh) * 2018-04-19 2018-09-07 韩继辉 一种面光源的制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105470218A (zh) * 2014-09-28 2016-04-06 德克萨斯仪器股份有限公司 用于热管理的背侧散热器的集成
CN106764607A (zh) * 2016-12-14 2017-05-31 安徽极光照明工程有限公司 一种高散热的led线性灯
CN108511578A (zh) * 2018-04-19 2018-09-07 庄明磊 一种led照明面板
CN108511579A (zh) * 2018-04-19 2018-09-07 韩继辉 一种面光源的制造方法

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