CN203377261U - Led封装支架及led封装结构 - Google Patents

Led封装支架及led封装结构 Download PDF

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Publication number
CN203377261U
CN203377261U CN201320453704.5U CN201320453704U CN203377261U CN 203377261 U CN203377261 U CN 203377261U CN 201320453704 U CN201320453704 U CN 201320453704U CN 203377261 U CN203377261 U CN 203377261U
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Prior art keywords
led
substrate
package support
led package
encapsulating structure
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万喜红
雷玉厚
尹江涛
陈栋
周印华
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Fujian Lightning Optoelectronic Co ltd
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LIGHTNING OPTOECTRONIC TECHNOLOGY (SHENZHEN) CO LTD
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)

Abstract

本实用新型实施例公开了一种LED封装支架及LED封装结构，所述LED封装支架包括基板及环绕所述基板转送成型的绝缘侧壁，所述绝缘侧壁和金属基板配合形成腔体。本实用新型实施例的LED封装支架和LED封装结构通过采用基板周围转送成型框状绝缘侧壁，绝缘侧壁和金属基板配合形成腔体的技术手段，达到了结构简单、稳固的，产品的使用寿命的技术效果；此外，采用镀银的高导热铜片和EMC材料，且封装结构尺寸小，厚度薄，对应结构的散热通道短，热阻小，性能稳定。

Description

LED封装支架及LED封装结构
技术领域
本实用新型涉及LED领域，尤其涉及一种LED封装支架及LED封装结构。
背景技术
发光二极管(Light Emitting Diode, LED)是一种能够将电能转化为光的固态的半导体器件，其被广泛应用于显示屏、交通讯号、显示光源、汽车用灯、LED背光源及照明光源等领域。
然而，目前的LED封装支架及封装结构复杂、不稳固，粘接强度差，导致产品的使用寿命短。
此外，所述LED封装支架及封装结构的耐热性、抗UV能力差。
实用新型内容
本实用新型实施例所要解决的技术问题在于，提供一种结构简单、稳固，产品的使用寿命长的LED封装支架及LED封装结构。
为了解决上述技术问题，本实用新型实施例提出了一种LED封装支架，包括基板及环绕所述基板转送成型的绝缘侧壁，所述绝缘侧壁和金属基板配合形成腔体。从而，借由转送成型于基板周围的框状绝缘侧壁，使得LED封装支架的结构简单，更稳固，产品的使用寿命长。
进一步地，所述基板包括两个由绝缘条隔离的镀银的高导热铜片。
进一步地，所述绝缘侧壁和绝缘条均采用环氧树脂塑封料（Epoxy Molding Compound，EMC）。从而，相对于现有的采用PPA材料形成碗杯，而热塑性材料的热稳定性能不好，且易变色，使用寿命短，吸水性强，寿命短的缺陷，本实用新型实施例是采用镀银的高导热铜片和EMC封装，热固性能较好，受热不易变形，具有高耐热，抗UV，高度集成及通高电流等优点。
进一步地，所述铜片为一大一小两个。
进一步地，所述LED封装支架的长度为2mm，宽度为1.6mm，基板厚度为0.2mm。从而，所述LED封装支架的尺寸小，成本低，方便实现大规模化生产。基板厚度薄，散热快，热阻小。
相应地，本实用新型实施例还提供了一种LED封装结构，包括如上所述的LED封装支架，以及固设于所述腔体底部的基板表面的LED芯片和填充于腔体内的荧光胶。
进一步地，所述LED芯片通过金线、银线、铜线或合金线与所述基板电连接。
进一步地，所述LED封装结构的厚度小于0.55mm。从而，LED封装结构的尺寸小，成本低，方便实现大规模化生产。
本实用新型实施例的LED封装支架和LED封装结构的有益效果是：通过采用基板周围转送成型框状绝缘侧壁，绝缘侧壁和金属基板配合形成腔体的技术手段，达到了结构简单、稳固及产品的使用寿命长的技术效果；此外，采用镀银的高导热铜片和EMC材料，热固性能较好，受热不易变形，具有高耐热，抗UV，高度集成及通高电流等优点。
附图说明
图1是本实用新型实施例的LED封装支架的俯视图。
图2是本实用新型实施例的LED封装结构的俯视图。
图3是本实用新型实施例的LED封装结构的侧视图。
具体实施方式
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互结合，下面结合附图和具体实施例对本实用新型作进一步详细说明。
请参考图1至图3，本实用新型实施例提供了一种结构简单、稳固，产品的使用寿命长的LED封装支架及LED封装结构。
所述LED封装支架，包括基板10及环绕所述基板10转送成型的绝缘侧壁20，所述绝缘侧壁20和金属基板10配合形成腔体。从而，借由转送成型于基板10周围的框状绝缘侧壁20，使得LED封装支架的结构简单，更稳固，产品的使用寿命长。具体地，所述LED封装支架的长度为2mm，宽度为1.6mm，基板10厚度为0.2mm。
所述基板10包括两个由绝缘条30隔离的镀银的高导热铜片。其中，所述铜片为一大一小两个。
所述绝缘侧壁20和绝缘条30均采用环氧树脂塑封料（Epoxy Molding Compound，EMC）。从而，相对于现有的采用PPA材料形成碗杯，而热塑性材料的热稳定性能不好，且易变色，使用寿命短，吸水性强，寿命短的缺陷，本实用新型实施例是采用镀银的高导热铜片和EMC封装，热固性能较好，受热不易变形，具有高耐热，抗UV，高度集成及通高电流等优点。
所述LED封装结构，包括如上所述的LED封装支架，以及固设于所述腔体底部的基板10表面的LED芯片40和填充于腔体内的荧光胶50。具体地，所述LED封装结构的厚度小于0.55mm。
所述LED芯片40通过金线、银线、铜线或合金线与所述基板10电连接。
综上，本实用新型实施例的LED封装支架和LED封装结构通过采用基板10周围转送成型框状绝缘侧壁20，绝缘侧壁20和金属基板10配合形成腔体的技术手段，达到了结构简单、稳固的，产品的使用寿命的技术效果；此外，采用镀银的高导热铜片和EMC材料，热固性能较好，受热不易变形，具有高耐热，抗UV，高度集成及通高电流等优点。
以上所述是本实用新型的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本实用新型原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本实用新型的保护范围。

Claims (7)

1. 一种LED封装支架，其特征在于，包括基板及环绕所述基板边缘转送成型的绝缘侧壁，所述绝缘侧壁和金属基板配合形成腔体。
2. 如权利要求1 所述的LED封装支架，其特征在于，所述基板包括两个由绝缘条隔离的镀银的高导热铜片。
3. 如权利要求2所述的LED封装支架，其特征在于，所述铜片为一大一小两个。
4. 如权利要求1所述的LED封装支架，其特征在于，所述LED封装支架的长度为2mm，宽度为1.6mm，基板厚度为0.2mm。
5. 一种LED封装结构，其特征在于，包括如权利要求1 至4 中任一项所述的LED封装支架，以及固设于所述腔体底部的基板表面的LED芯片和填充于腔体内的荧光胶。
6. 如权利要求5所述的LED封装结构，其特征在于，所述LED芯片通过金线、银线、铜线或合金线与所述基板电连接。
7. 如权利要求5所述的LED封装结构，其特征在于，所述LED封装结构的厚度小于0.55mm。
CN201320453704.5U 2013-07-29 2013-07-29 Led封装支架及led封装结构 Expired - Lifetime CN203377261U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104269488A (zh) * 2014-10-21 2015-01-07 江苏稳润光电有限公司 一种高可靠性led封装结构及方法
CN104733451A (zh) * 2015-03-02 2015-06-24 山东盛品电子技术有限公司 一种多项目芯片封装及方法
CN105870299A (zh) * 2016-06-02 2016-08-17 深圳市磊立捷光电有限公司 一种封装体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104269488A (zh) * 2014-10-21 2015-01-07 江苏稳润光电有限公司 一种高可靠性led封装结构及方法
CN104733451A (zh) * 2015-03-02 2015-06-24 山东盛品电子技术有限公司 一种多项目芯片封装及方法
CN105870299A (zh) * 2016-06-02 2016-08-17 深圳市磊立捷光电有限公司 一种封装体

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Effective date of registration: 20171012

Address after: The Town Lake Anxi County of Quanzhou City, Fujian province 362411 Photoelectric Industrial Park

Patentee after: FUJIAN LIGHTNING OPTOELECTRONIC Co.,Ltd.

Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 South Road community should be one stone Wentao Science Park building B

Patentee before: Lightning Optoectronic Technology (Shenzhen) Co.,Ltd.

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