CN202395874U - 固体摄像元件和电子装置 - Google Patents

固体摄像元件和电子装置 Download PDF

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Publication number
CN202395874U
CN202395874U CN2011205220211U CN201120522021U CN202395874U CN 202395874 U CN202395874 U CN 202395874U CN 2011205220211 U CN2011205220211 U CN 2011205220211U CN 201120522021 U CN201120522021 U CN 201120522021U CN 202395874 U CN202395874 U CN 202395874U
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China
Prior art keywords
voltage
light
solid
state imaging
shielding film
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Expired - Fee Related
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CN2011205220211U
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English (en)
Chinese (zh)
Inventor
大池祐辅
町田贵志
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2011205220211U 2010-12-15 2011-12-14 固体摄像元件和电子装置 Expired - Fee Related CN202395874U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010279508A JP5637384B2 (ja) 2010-12-15 2010-12-15 固体撮像素子および駆動方法、並びに電子機器
JP2010-279508 2010-12-15

Publications (1)

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CN202395874U true CN202395874U (zh) 2012-08-22

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CN2011205220211U Expired - Fee Related CN202395874U (zh) 2010-12-15 2011-12-14 固体摄像元件和电子装置
CN2011104172060A Pending CN102547168A (zh) 2010-12-15 2011-12-14 固体摄像元件、固体摄像元件的驱动方法和电子装置

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US (2) US8884206B2 (enExample)
JP (1) JP5637384B2 (enExample)
CN (2) CN202395874U (enExample)

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CN102547168A (zh) * 2010-12-15 2012-07-04 索尼公司 固体摄像元件、固体摄像元件的驱动方法和电子装置
CN111415950A (zh) * 2019-01-07 2020-07-14 力晶科技股份有限公司 影像传感器及其制造方法
CN113923387A (zh) * 2016-02-29 2022-01-11 索尼公司 固态摄像装置

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JP6012197B2 (ja) * 2012-02-17 2016-10-25 キヤノン株式会社 撮像装置及び撮像装置の駆動方法
WO2014002365A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
KR101352436B1 (ko) * 2012-10-31 2014-01-20 주식회사 동부하이텍 이미지 센서
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TWI623232B (zh) 2013-07-05 2018-05-01 Sony Corp 固體攝像裝置及其驅動方法以及包含固體攝像裝置之電子機器
CN103491324B (zh) * 2013-09-29 2016-04-20 长春长光辰芯光电技术有限公司 高速全局快门图像传感器像素及其像素信号的采样方法
JP6376785B2 (ja) 2014-03-14 2018-08-22 キヤノン株式会社 撮像装置、および、撮像システム
KR102234041B1 (ko) * 2014-06-18 2021-04-01 삼성전자주식회사 이미지 센서와 이를 포함하는 이미지 처리 시스템
CN111799285B (zh) * 2014-12-18 2024-05-14 索尼公司 成像装置
US9899445B2 (en) * 2015-05-19 2018-02-20 Canon Kabushiki Kaisha Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same
US9935140B2 (en) * 2015-05-19 2018-04-03 Canon Kabushiki Kaisha Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
JP6711597B2 (ja) * 2015-12-01 2020-06-17 キヤノン株式会社 固体撮像装置の製造方法、固体撮像装置、及びそれを有する撮像システム
US10341592B2 (en) 2015-06-09 2019-07-02 Sony Semiconductor Solutions Corporation Imaging element, driving method, and electronic device
TWI701819B (zh) * 2015-06-09 2020-08-11 日商索尼半導體解決方案公司 攝像元件、驅動方法及電子機器
KR102114629B1 (ko) 2015-09-30 2020-05-25 가부시키가이샤 니콘 촬상 소자 및 전자 카메라
US10580814B2 (en) * 2016-03-15 2020-03-03 Sony Corporation Solid-state imaging device having light shielding films, method of manufacturing the same, and electronic apparatus
US20180076255A1 (en) * 2016-09-15 2018-03-15 Seiko Epson Corporation Solid-state image capturing device and electronic apparatus
WO2018062561A1 (ja) * 2016-09-29 2018-04-05 株式会社ニコン 撮像素子およびカメラ
CN110050345B (zh) * 2016-12-09 2023-11-14 索尼半导体解决方案公司 固态图像拾取元件和电子装置
CN110073494A (zh) * 2016-12-15 2019-07-30 Towerjazz松下半导体有限公司 固体摄像元件
JP2018160486A (ja) 2017-03-22 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
CN109148497B (zh) * 2018-07-19 2020-12-25 上海集成电路研发中心有限公司 一种防止寄生光响应的全局像元结构及形成方法
CN109068075A (zh) * 2018-08-21 2018-12-21 德淮半导体有限公司 Cmos图像传感器、像素单元及其驱动方法
CN109841183B (zh) * 2019-03-27 2022-06-10 京东方科技集团股份有限公司 一种像素电路及其驱动方法、阵列基板、显示装置
CN110493546B (zh) * 2019-09-05 2021-08-17 锐芯微电子股份有限公司 Cmos图像传感器、像素单元及其控制方法
CN114731376A (zh) * 2019-12-02 2022-07-08 索尼半导体解决方案公司 固体摄像装置和电子设备
CN114830338A (zh) * 2019-12-20 2022-07-29 松下知识产权经营株式会社 固体摄像元件
DE112021000802T5 (de) * 2020-01-31 2022-12-29 Sony Semiconductor Solutions Corporation Festkörper-bildsensor
JP2022104203A (ja) 2020-12-28 2022-07-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
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JP4774311B2 (ja) * 2006-02-17 2011-09-14 富士フイルム株式会社 固体撮像素子及びその駆動方法並びに撮像装置
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JP2010034512A (ja) * 2008-07-01 2010-02-12 Fujifilm Corp 固体撮像素子及び撮像装置
JP2011204878A (ja) * 2010-03-25 2011-10-13 Sony Corp 固体撮像デバイスおよび電子機器
JP2011216673A (ja) * 2010-03-31 2011-10-27 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP2011222708A (ja) * 2010-04-08 2011-11-04 Sony Corp 固体撮像装置、固体撮像装置の製造方法、および電子機器
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102547168A (zh) * 2010-12-15 2012-07-04 索尼公司 固体摄像元件、固体摄像元件的驱动方法和电子装置
CN113923387A (zh) * 2016-02-29 2022-01-11 索尼公司 固态摄像装置
CN111415950A (zh) * 2019-01-07 2020-07-14 力晶科技股份有限公司 影像传感器及其制造方法

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Publication number Publication date
US20140319323A1 (en) 2014-10-30
JP5637384B2 (ja) 2014-12-10
US8884206B2 (en) 2014-11-11
US10229941B2 (en) 2019-03-12
CN102547168A (zh) 2012-07-04
US20120153126A1 (en) 2012-06-21
JP2012129798A (ja) 2012-07-05

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Granted publication date: 20120822

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