CN202308038U - 1W high-power LED (Light-Emitting Diode) encapsulating structure - Google Patents
1W high-power LED (Light-Emitting Diode) encapsulating structure Download PDFInfo
- Publication number
- CN202308038U CN202308038U CN2011203889404U CN201120388940U CN202308038U CN 202308038 U CN202308038 U CN 202308038U CN 2011203889404 U CN2011203889404 U CN 2011203889404U CN 201120388940 U CN201120388940 U CN 201120388940U CN 202308038 U CN202308038 U CN 202308038U
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- CN
- China
- Prior art keywords
- metal base
- power led
- chip
- encapsulation structure
- led encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
The utility model relates to a 1W high-power LED (Light-Emitting Diode) encapsulating structure, which comprises a bracket consisting of a metal base, a plastic component and a conducting sheet, wherein the conducting sheet is encapsulated in the plastic component; the two ends of the conducting sheet construct an electrode connecting end and a pin conducting end; the metal base is positioned at the middle position of the bracket; the upper and lower surfaces of the metal base are exposed outside the plastic component; a high-power LED chip is fixed on the upper surface of the metal base; an electrode of the chip is connected with an electrode connecting end on the conducting sheet through a lead; the surface of the chip is provided with a transparent glued layer; and a semi-spherical LENS encapsulated by using resin or a silica gel material is arranged above the bracket and the chip. The 1W high-power LED (Light-Emitting Diode) encapsulating structure has the beneficial effects that: full-automatic production can be realized in an entire encapsulating process, the stability of a product is greatly enhanced, the dense distribution of the bracket is determined by using the structure of the product, the production efficiency can be greatly increased, and the production requirement of a modern enterprise is met.
Description
Technical field
The utility model relates to the LED field, especially a kind of 1W high-power LED encapsulation structure.
Background technology
Light-emitting diode is as green, energy-conserving light source, obtains development energetically in the past few years, and its supporting package structure for LED is also in continuous update, and performance has also obtained rapid development.1W packing forms traditional on the present domestic market is as shown in Figure 1, and its encapsulating structure existence is big like the material use amount, waste is big, low, the not high defective of automated production degree of packaging yield, and can't effectively be improved always; But, packaging technology low because of its support ample supply of goods, price requires the existence of advantage such as low, still on market, occupies than great share; Though also occurred many new constructions in these several years; But because the problems such as matching of these new constructions in price, performance, application process; Fail to become the packing forms of the market mainstream; Thereby make this type of package structure for LED to break through, the development of this type of package structure for LED has been produced greatest restriction, and also there is certain influence in automated production to the light-emitting diode application vendor.
Popularize along with what LED threw light in recent years; The production scale of LED light fixture producer enlarges gradually; Corresponding production model is assembled for mechanization from the conventional artificial assembly model gradually transition automatically, but quality abnormal appears in traditional large-power light-emitting diodes easily when automated production, and production capacity efficient does not catch up with demand yet; Restrict the development of modern enterprise greatly, causing very big waste of material simultaneously.
At present external traditional 1W encapsulating structure as shown in Figure 1 is eliminated basically.Therefore Application and Development is convenient, intensive new construction high-power light-emitting diode replaces traditional packing forms to become current domestic LED to encapsulate enterprise has problem to be solved.
Summary of the invention
The utility model will solve the shortcoming of above-mentioned prior art, provides a kind of and can improve the LED package acceptance rate, improves light-emitting diode production efficiency, is convenient to the 1W high-power LED encapsulation structure of mass automatic production.
The utility model solves the technical scheme that its technical problem adopts: this 1W high-power LED encapsulation structure; Comprise the support of being made up of metal base, plastic cement member and conducting strip, conducting strip is packaged in the plastic cement member, and its two ends constitute electrode link and pin conducting end; Metal base is positioned at the support centre position; Its upper and lower surfaces is exposed to outside the plastic cement member, and the metal base upper surface is fixed with high-power light-emitting diode chip, and the electrode of chip is connected through lead with electrode link on the conducting strip; Chip surface is provided with the transparent adhesive tape coating, and support and chip top are provided with the hemisphere LENS (being lens) with resin or silica gel material encapsulation.
As preferably, be mixed with fluorescent material in the said transparent adhesive tape coating, to make the diode needs that emit white light.
As preferably, the metal base upper surface is connected through the good bonding agent of heat conductivility with chip.
As preferably, metal base adopts the metal or alloy material with high thermal conductivity coefficient to process.
As preferably, metal base adopts silver, copper or aluminium to process.
As preferably, the plastic cement member adopts PPA, PA9T or LCP material to process, and above material is high-temperature resistance plastice, has high temperature resistant, Stability Analysis of Structures, advantage that water absorption is low.
As preferably, lead adopt gold thread, silver-colored line or conduct electricity, alloy wire that ductility is good processes.
As preferably, the transparent adhesive tape coating adopts silicones, silicon rubber or epoxy resin to process these material light transmittance height, good airproof performance, stable performance.
The effect that the utility model is useful is: the whole encapsulation process of the utility model can realize full-automatic production; Improve the stability of product greatly; Its structures shape the intensity of support distribute, can enhance productivity greatly, meet the production demand of modern enterprise.
Description of drawings
Fig. 1 is traditional 1W high power LED package structure sketch map;
Fig. 2 is the structural representation of the utility model;
Fig. 3 is the vertical view of the utility model;
Fig. 4 is the vertical view of institute's use support in the utility model;
Fig. 5 is the upward view of institute's use support in the utility model;
Fig. 6 is the utility model large-power light-emitting diodes packaging technology sketch map (Gu brilliant, bond graph);
Fig. 7 is the utility model encapsulation hemisphere LENS process schematic representation;
Description of reference numerals: chip 1, lead 2, hemisphere LENS3, bonding agent 4, metal base 5, conducting strip 6, electrode link 7, pin conducting end 8, plastic cement member 9, transparent adhesive tape coating 10.
Embodiment
Below in conjunction with accompanying drawing the utility model is described further:
Embodiment: shown in Fig. 2-5, the 1W high-power LED encapsulation structure, its support is made up of metal base 5, plastic cement member 9 and conducting strip 6, and conducting strip 6 is packaged in the plastic cement member 9, and its two ends constitute electrode link 7 and pin conducting end 8.Outside the upper and lower surfaces of metal base 5 was exposed to, by plastic cement member 9 parcels, its upper surface was smooth smoothless; And through silver-plated processing, the bonding agent 4 that high power LED chip 1 usefulness heat conductivility is good is fixed in the upper surface center of metal base 5, and chip 1 top electrode is connected the electrode link 7 on the conducting strip 6 through lead 2; Connected mode is as shown in Figure 6; The glue that then will be mixed with fluorescent material with high-accuracy point gum machine or glue sprayer is coated on chip 1 surface, forms a transparent adhesive tape coating 10, will put in order board mount at last and pack in the automatic glue-injection machine mould; As shown in Figure 7, going out a hemisphere LENS3 with resin or silica type material package can accomplish.The heat that produces during large-power light-emitting diodes work passes to metal base 5 through the bonding agent 4 of fixed chip 1, is passed to the radiator of light fixture again by metal base 5.
Wherein, the metal base material can have the metal or alloy material of high thermal conductivity coefficient for silver, copper, aluminium etc.; Plastic material can be high temperature resistant for PPA, PA9T, LCP etc., Stability Analysis of Structures, material that water absorption is low; Used lead can be for gold thread, silver-colored line or the alloy wire of advantage such as tool conducts electricity, ductility is good; Used glue can be the glue material of light transmittance height such as silicones, silicon rubber or epoxy resin, good airproof performance, stable performance.
Except that the foregoing description, the utility model can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of the utility model requirement.
Claims (7)
1. 1W high-power LED encapsulation structure; Comprise the support of forming by metal base (5), plastic cement member (9) and conducting strip (6); It is characterized in that: conducting strip (6) is packaged in the plastic cement member (9); Its two ends constitute electrode link (7) and pin conducting end (8), and metal base (5) is positioned at the support centre position, and its upper and lower surfaces is exposed to outside the plastic cement member (9); Metal base (5) upper surface is fixed with high-power light-emitting diode chip (1); The electrode of chip (1) is connected through lead (2) with electrode link (7) on the conducting strip (6), and chip (1) surface is provided with transparent adhesive tape coating (10), and support and chip (1) top is provided with resin or silica gel material encapsulation and constitutes hemisphere LENS (3).
2. 1W high-power LED encapsulation structure according to claim 1 is characterized in that: metal base (5) upper surface is connected through the good bonding agent of heat conductivility (4) with chip (1).
3. 1W high-power LED encapsulation structure according to claim 1 is characterized in that: said metal base (5) adopts the metal or alloy material with high thermal conductivity coefficient to process.
4. 1W high-power LED encapsulation structure according to claim 4 is characterized in that: said metal base (5) adopts silver, copper or aluminium to process.
5. 1W high-power LED encapsulation structure according to claim 1 is characterized in that: said plastic cement member (9) adopts PPA, PA9T or LCP material to process.
6. 1W high-power LED encapsulation structure according to claim 1 is characterized in that: said lead (2) adopt gold thread, silver-colored line or conduct electricity, alloy wire that ductility is good processes.
7. 1W high-power LED encapsulation structure according to claim 1 is characterized in that: said transparent adhesive tape coating (10) adopts silicones, silicon rubber or epoxy resin to process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203889404U CN202308038U (en) | 2011-10-13 | 2011-10-13 | 1W high-power LED (Light-Emitting Diode) encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203889404U CN202308038U (en) | 2011-10-13 | 2011-10-13 | 1W high-power LED (Light-Emitting Diode) encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202308038U true CN202308038U (en) | 2012-07-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203889404U Expired - Fee Related CN202308038U (en) | 2011-10-13 | 2011-10-13 | 1W high-power LED (Light-Emitting Diode) encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202308038U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951774A (en) * | 2021-01-26 | 2021-06-11 | 徐州市创泽优电子科技有限公司 | Substrate for packaging electronic device |
-
2011
- 2011-10-13 CN CN2011203889404U patent/CN202308038U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951774A (en) * | 2021-01-26 | 2021-06-11 | 徐州市创泽优电子科技有限公司 | Substrate for packaging electronic device |
| CN112951774B (en) * | 2021-01-26 | 2024-02-09 | 徐州市创泽优电子科技有限公司 | Substrate for packaging electronic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20171013 |
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| CF01 | Termination of patent right due to non-payment of annual fee |