CN202282352U - 通过外延方法形成fs层的高压igbt - Google Patents
通过外延方法形成fs层的高压igbt Download PDFInfo
- Publication number
- CN202282352U CN202282352U CN 201120268817 CN201120268817U CN202282352U CN 202282352 U CN202282352 U CN 202282352U CN 201120268817 CN201120268817 CN 201120268817 CN 201120268817 U CN201120268817 U CN 201120268817U CN 202282352 U CN202282352 U CN 202282352U
- Authority
- CN
- China
- Prior art keywords
- conduction type
- interarea
- semiconductor substrate
- type base
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 238000000407 epitaxy Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000001465 metallisation Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229920005591 polysilicon Polymers 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010019133 Hangover Diseases 0.000 description 1
- 241001661355 Synapsis Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120268817 CN202282352U (zh) | 2011-07-27 | 2011-07-27 | 通过外延方法形成fs层的高压igbt |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120268817 CN202282352U (zh) | 2011-07-27 | 2011-07-27 | 通过外延方法形成fs层的高压igbt |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202282352U true CN202282352U (zh) | 2012-06-20 |
Family
ID=46228509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201120268817 Expired - Lifetime CN202282352U (zh) | 2011-07-27 | 2011-07-27 | 通过外延方法形成fs层的高压igbt |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202282352U (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102903743A (zh) * | 2012-10-29 | 2013-01-30 | 江苏物联网研究发展中心 | 采用金属硅化物的功率半导体器件结构及制备方法 |
CN102931227A (zh) * | 2012-11-09 | 2013-02-13 | 江苏物联网研究发展中心 | 钝化半导体接触表面的功率半导体器件结构及制备方法 |
CN103489776A (zh) * | 2013-09-18 | 2014-01-01 | 中国东方电气集团有限公司 | 一种实现场截止型绝缘栅双极型晶体管的工艺方法 |
WO2014012425A1 (zh) * | 2012-07-19 | 2014-01-23 | 无锡华润上华半导体有限公司 | 场终止igbt的制造方法 |
CN103928318A (zh) * | 2013-01-14 | 2014-07-16 | 上海宝芯源功率半导体有限公司 | 一种场终止型igbt 器件的制造方法 |
RU2524145C1 (ru) * | 2013-01-09 | 2014-07-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ изготовления бсит-транзистора с охранными кольцами |
CN103972085A (zh) * | 2013-01-30 | 2014-08-06 | 无锡华润上华半导体有限公司 | 一种形成高压igbt的fs层的方法及igbt器件 |
CN104269357A (zh) * | 2013-03-26 | 2015-01-07 | 杭州士兰集成电路有限公司 | 功率半导体器件及其制造方法 |
-
2011
- 2011-07-27 CN CN 201120268817 patent/CN202282352U/zh not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014012425A1 (zh) * | 2012-07-19 | 2014-01-23 | 无锡华润上华半导体有限公司 | 场终止igbt的制造方法 |
CN103578980A (zh) * | 2012-07-19 | 2014-02-12 | 无锡华润上华半导体有限公司 | 场终止绝缘栅双极型晶体管的制备方法 |
CN102903743A (zh) * | 2012-10-29 | 2013-01-30 | 江苏物联网研究发展中心 | 采用金属硅化物的功率半导体器件结构及制备方法 |
CN102903743B (zh) * | 2012-10-29 | 2015-03-18 | 江苏物联网研究发展中心 | 采用金属硅化物的功率半导体器件结构及制备方法 |
CN102931227A (zh) * | 2012-11-09 | 2013-02-13 | 江苏物联网研究发展中心 | 钝化半导体接触表面的功率半导体器件结构及制备方法 |
RU2524145C1 (ru) * | 2013-01-09 | 2014-07-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ изготовления бсит-транзистора с охранными кольцами |
CN103928318A (zh) * | 2013-01-14 | 2014-07-16 | 上海宝芯源功率半导体有限公司 | 一种场终止型igbt 器件的制造方法 |
CN103972085A (zh) * | 2013-01-30 | 2014-08-06 | 无锡华润上华半导体有限公司 | 一种形成高压igbt的fs层的方法及igbt器件 |
CN104269357A (zh) * | 2013-03-26 | 2015-01-07 | 杭州士兰集成电路有限公司 | 功率半导体器件及其制造方法 |
CN103489776A (zh) * | 2013-09-18 | 2014-01-01 | 中国东方电气集团有限公司 | 一种实现场截止型绝缘栅双极型晶体管的工艺方法 |
CN103489776B (zh) * | 2013-09-18 | 2016-06-01 | 中国东方电气集团有限公司 | 一种实现场截止型绝缘栅双极型晶体管的工艺方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN202282352U (zh) | 通过外延方法形成fs层的高压igbt | |
CN109920854B (zh) | Mosfet器件 | |
CN108767000B (zh) | 一种绝缘栅双极型半导体器件及其制造方法 | |
CN102723363B (zh) | 一种vdmos器件及其制作方法 | |
CN105679816B (zh) | 一种沟槽栅电荷存储型igbt及其制造方法 | |
CN105789269A (zh) | 沟槽绝缘栅双极型晶体管及其制备方法 | |
CN103972287A (zh) | 半导体装置 | |
CN109119463A (zh) | 一种横向沟槽型mosfet器件及其制备方法 | |
CN114944421B (zh) | 一种沟槽型碳化硅绝缘栅场效应晶体管及其制作方法 | |
CN102842502B (zh) | 绝缘栅双极晶体管及其制作方法 | |
CN108336133B (zh) | 一种碳化硅绝缘栅双极型晶体管及其制作方法 | |
CN103855206A (zh) | 绝缘栅双极晶体管及其制造方法 | |
CN113066865B (zh) | 降低开关损耗的半导体器件及其制作方法 | |
CN110504313B (zh) | 一种横向沟槽型绝缘栅双极晶体管及其制备方法 | |
CN110061047A (zh) | 一种igbt结构及其制作方法 | |
CN111261702A (zh) | 沟槽型功率器件及其形成方法 | |
CN211629117U (zh) | 复合沟道igbt器件 | |
CN111370464A (zh) | 沟槽栅功率器件及其制造方法 | |
CN105702720B (zh) | 一种绝缘栅双极型晶体管的关断性能提升方法 | |
CN114975621A (zh) | 能提升短路能力的igbt器件及制备方法 | |
CN104992968B (zh) | 一种绝缘栅双极型晶体管及其制造方法 | |
CN209183553U (zh) | 一种带有双外延层的沟槽栅双极型晶体管器件 | |
CN102931228B (zh) | 逆导igbt器件及制造方法 | |
CN107452623A (zh) | 一种快恢复二极管的制造方法及快恢复二极管 | |
CN111341843A (zh) | 复合沟道igbt器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INST OF MICROELECTRONICS, C. A. S JIANGSU JUNSHINE Effective date: 20130307 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130307 Address after: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Patentee after: JIANGSU R & D CENTER FOR INTERNET OF THINGS Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Patentee after: JIANGSU ZHONGKE JUNSHINE TECHNOLOGY Co.,Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Patentee before: JIANGSU R & D CENTER FOR INTERNET OF THINGS |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20120620 |