CN102903743A - 采用金属硅化物的功率半导体器件结构及制备方法 - Google Patents
采用金属硅化物的功率半导体器件结构及制备方法 Download PDFInfo
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- CN102903743A CN102903743A CN2012104210762A CN201210421076A CN102903743A CN 102903743 A CN102903743 A CN 102903743A CN 2012104210762 A CN2012104210762 A CN 2012104210762A CN 201210421076 A CN201210421076 A CN 201210421076A CN 102903743 A CN102903743 A CN 102903743A
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CN201210421076.2A CN102903743B (zh) | 2012-10-29 | 2012-10-29 | 采用金属硅化物的功率半导体器件结构及制备方法 |
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CN201210421076.2A CN102903743B (zh) | 2012-10-29 | 2012-10-29 | 采用金属硅化物的功率半导体器件结构及制备方法 |
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CN102903743A true CN102903743A (zh) | 2013-01-30 |
CN102903743B CN102903743B (zh) | 2015-03-18 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158940A (zh) * | 2016-08-12 | 2016-11-23 | 无锡橙芯微电子股份有限公司 | 一种具有部分埋氧结构的igbt器件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0718893A2 (en) * | 1994-11-25 | 1996-06-26 | Fuji Electric Co., Ltd. | MOS controlled thyristor having two gates |
US20060261347A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same |
CN101887913A (zh) * | 2010-06-04 | 2010-11-17 | 无锡新洁能功率半导体有限公司 | 一种具有改善型集电极结构的igbt |
CN202282352U (zh) * | 2011-07-27 | 2012-06-20 | 江苏物联网研究发展中心 | 通过外延方法形成fs层的高压igbt |
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2012
- 2012-10-29 CN CN201210421076.2A patent/CN102903743B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0718893A2 (en) * | 1994-11-25 | 1996-06-26 | Fuji Electric Co., Ltd. | MOS controlled thyristor having two gates |
US20060261347A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same |
CN101887913A (zh) * | 2010-06-04 | 2010-11-17 | 无锡新洁能功率半导体有限公司 | 一种具有改善型集电极结构的igbt |
CN202282352U (zh) * | 2011-07-27 | 2012-06-20 | 江苏物联网研究发展中心 | 通过外延方法形成fs层的高压igbt |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158940A (zh) * | 2016-08-12 | 2016-11-23 | 无锡橙芯微电子股份有限公司 | 一种具有部分埋氧结构的igbt器件及其制造方法 |
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Owner name: INST OF MICROELECTRONICS, C. A. S JIANGSU JUNSHINE Effective date: 20130117 |
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Inventor after: Xu Chengfu Inventor after: Zhu Yangjun Inventor after: Wang Bo Inventor after: Lu Shuojin Inventor after: Wu Kai Inventor after: Chen Hong Inventor before: Xu Chengfu Inventor before: Zhu Yangjun Inventor before: Lu Shuojin Inventor before: Wu Kai Inventor before: Chen Hong |
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Free format text: CORRECT: INVENTOR; FROM: XU CHENGFU ZHU YANGJUN LU SHUOJIN WU KAI CHEN HONG TO: XU CHENGFU ZHU YANGJUN WANG BO LU SHUOJIN WU KAI CHEN HONG |
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Effective date of registration: 20130117 Address after: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Applicant after: JIANGSU R & D CENTER FOR INTERNET OF THINGS Applicant after: Institute of Microelectronics of the Chinese Academy of Sciences Applicant after: JIANGSU ZHONGKE JUNSHINE TECHNOLOGY Co.,Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Applicant before: JIANGSU R & D CENTER FOR INTERNET OF THINGS |
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