CN201838591U - Anti-static protection diode structure - Google Patents
Anti-static protection diode structure Download PDFInfo
- Publication number
- CN201838591U CN201838591U CN2010205611615U CN201020561161U CN201838591U CN 201838591 U CN201838591 U CN 201838591U CN 2010205611615 U CN2010205611615 U CN 2010205611615U CN 201020561161 U CN201020561161 U CN 201020561161U CN 201838591 U CN201838591 U CN 201838591U
- Authority
- CN
- China
- Prior art keywords
- diode
- pin
- antistatic
- paster
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The utility model relates to an anti-static protection diode structure which comprises a first anti-static diode, a second anti-static diode, a first switch diode, a second switch diode, a first pin, a second pin and a packaging body, wherein the back sides of the first anti-static diode and the first switch diode are attached to a first patch paddle of the first pin; the back sides of the second anti-static diode and the second switch diode are attached to a second patch paddle of the second pin; the surface of the first anti-static diode is electrically connected with the second switch diode on the second patch paddle through a metal lead wire; the surface of the second anti-static diode is electrically connected with the first switch diode on the first patch paddle through a metal lead wire; and the first anti-static diode, the second anti-static diode, the first switch diode, the second switch diode, the first patch paddle of the first pin and the second patch paddle of the second pin are all encapsulated in the packaging body. The anti-static protection diode structure has the advantages of simple structure and small junction capacitance.
Description
Technical field
The utility model relates to a kind of diode structure, is specifically related to a kind of antistatic protection diode structure.
Background technology
At present, on the data transmission interface of electronic equipment, need to adopt electro-static discharge protection diodes.The junction capacitance of traditional electro-static discharge protection diodes is more than the 1pf; be that junction capacitance is bigger; can cause transmission signals the phenomenon of delay and distortion to occur, need to adopt junction capacitance to be lower than the electro-static discharge protection diodes of 1pf, and the electro-static discharge protection diodes chip of this kind structure be difficult to obtain.
Summary of the invention
The purpose of this utility model provides a kind of simple in structure, antistatic protection diode structure that junction capacitance is less.
In order to achieve the above object, the technical solution of the utility model is: a kind of antistatic protection diode structure comprises the first antistatic diode, the second antistatic diode, first switching diode, second switch diode, first pin, second pin and packaging body; The back side of the described first antistatic diode and first switching diode is mounted on the first paster Ji Dao of first pin, and the back side of the second antistatic diode and second switch diode is mounted on the second paster Ji Dao of second pin; The surface of the described first antistatic diode is connected with second switch diode electrically on the second paster Ji Dao by metal lead wire, and the surface of the second antistatic diode is electrically connected with first switching diode on the first paster Ji Dao by metal lead wire; First paster Ji Dao of the described first antistatic diode, the second antistatic diode, first switching diode, second switch diode, first pin and the second paster Ji Dao of second pin all are encapsulated in the packaging body.
The back side of the described first antistatic diode and first switching diode is welded or is mounted on by conductive adhesive on the first paster Ji Dao of first pin by eutectic, and the back side of the second antistatic diode and second switch diode is welded or is mounted on by conductive adhesive on the second paster Ji Dao of second pin by eutectic.
Described first pin and second pin are in the outer part of plastic-sealed body and all are bending-like, and the extension of two pins is in the same plane.
The good effect that the utility model had is: antistatic protection diode structure of the present utility model; because the junction capacitance of switching diode is very little; thereby an antistatic protection diode connected with a switching diode make it possible to reduce capacitance; the antistatic protection diode of two groups of series connection is in parallel with switching diode; and be encapsulated in the packaging body; the advantage that can have bidirectional protective; and the junction capacitance of the antistatic protection diode of this structure is lower than 1pf, and the data transfer signal that has overcome electronic equipment occurs postponing and the phenomenon of distortion.In addition, the utility model is simple in structure, and production cost is low, is fit to produce in enormous quantities.
Description of drawings
Fig. 1 is the structural representation that the utility model antistatic protection diode structure is cut packaging body open;
Fig. 2 is the left view of Fig. 1;
Fig. 3 is the right view of Fig. 1.
Embodiment
Below in conjunction with the embodiment that accompanying drawing provides, the utility model is described in further detail.
As shown in Figure 1, 2, 3, a kind of antistatic protection diode structure comprises the first antistatic diode 1, the second antistatic diode 2, first switching diode 3, second switch diode 4, first pin 5, second pin 6 and packaging body 7; The back side of the described first antistatic diode 1 and first switching diode 3 is mounted on the first paster base island 5-1 of first pin 5, and the back side of the second antistatic diode 2 and second switch diode 4 is mounted on the second paster base island 6-1 of second pin 6; The surface of the described first antistatic diode 1 is electrically connected with second switch diode 4 on the second paster base island 6-1 by metal lead wire, and the surface of the second antistatic diode 2 is electrically connected with first switching diode 3 on the first paster base island 5-1 by metal lead wire; The described first antistatic diode 1, the second antistatic diode 2, first switching diode 3, second switch diode 4, the first paster base island 5-1 of first pin 5 and the second paster base island 6-1 of second pin 6 all are encapsulated in the packaging body 7.
As shown in Figure 1, 2, 3, in order to guarantee that the first antistatic diode, the second antistatic diode, first switching diode, second switch diode and pairing paster Ji Dao reach good Ohmic contact when mounting, the back side of the described first antistatic diode 1 and first switching diode 3 is welded or is mounted on by conductive adhesive on the first paster base island 5-1 of first pin 5 by eutectic, and the back side of the second antistatic diode 2 and second switch diode 4 is welded or is mounted on by conductive adhesive on the second paster base island 6-1 of second pin 6 by eutectic.
As shown in Figure 1, 2, 3, for package strength and the reliability that increases paster Ji Dao and packaging body, described first pin 5 and second pin 6 are in plastic-sealed body 7 outer parts and all are bending-like, and the extension of two pins is in the same plane.
Claims (3)
1. antistatic protection diode structure is characterized in that:
A, comprise the first antistatic diode (1), the second antistatic diode (2), first switching diode (3), second switch diode (4), first pin (5), second pin (6) and packaging body (7);
The back side of b, the described first antistatic diode (1) and first switching diode (3) is mounted on the first paster Ji Dao (5-1) of first pin (5), and the back side of the second antistatic diode (2) and second switch diode (4) is mounted on the second paster Ji Dao (6-1) of second pin (6);
The surface of c, the described first antistatic diode (1) is electrically connected with second switch diode (4) on the second paster Ji Dao (6-1) by metal lead wire, and the surface of the second antistatic diode (2) is electrically connected with first switching diode (3) on the first paster Ji Dao (5-1) by metal lead wire;
First paster Ji Dao (5-1) of d, the described first antistatic diode (1), the second antistatic diode (2), first switching diode (3), second switch diode (4), first pin (5) and the second paster Ji Dao (6-1) of second pin (6) all are encapsulated in the packaging body (7).
2. antistatic protection diode structure according to claim 1; it is characterized in that: the back side of described first antistatic diode (1) and first switching diode (3) is welded or is mounted on by conductive adhesive on the first paster Ji Dao (5-1) of first pin (5) by eutectic, and the back side of the second antistatic diode (2) and second switch diode (4) is welded or is mounted on by conductive adhesive on the second paster Ji Dao (6-1) of second pin (6) by eutectic.
3. antistatic protection diode structure according to claim 1 is characterized in that: described first pin (5) and second pin (6) are in the outer part of plastic-sealed body (7) and all are bending-like, and the extension of two pins is in the same plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205611615U CN201838591U (en) | 2010-09-30 | 2010-09-30 | Anti-static protection diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205611615U CN201838591U (en) | 2010-09-30 | 2010-09-30 | Anti-static protection diode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201838591U true CN201838591U (en) | 2011-05-18 |
Family
ID=44008694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205611615U Expired - Lifetime CN201838591U (en) | 2010-09-30 | 2010-09-30 | Anti-static protection diode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201838591U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035535A (en) * | 2012-12-26 | 2013-04-10 | 常州银河世纪微电子有限公司 | Preparation method for large current / high-voltage diode |
-
2010
- 2010-09-30 CN CN2010205611615U patent/CN201838591U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035535A (en) * | 2012-12-26 | 2013-04-10 | 常州银河世纪微电子有限公司 | Preparation method for large current / high-voltage diode |
| CN103035535B (en) * | 2012-12-26 | 2015-03-04 | 常州银河世纪微电子有限公司 | Preparation method for large current / high-voltage diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106449540B (en) | Patch type rectification chip | |
| TWI315571B (en) | Integrated circuit packaging | |
| CN104348051B (en) | Micro coaxial cable connector assembly | |
| CN103117263A (en) | Integrated circuit package | |
| CN201838591U (en) | Anti-static protection diode structure | |
| CN201838584U (en) | Encapsulated triode | |
| CN201927744U (en) | Assembling structure of flexible flat cable connector | |
| CN204497239U (en) | Metallic packaging big current, high voltage, fast recovery diode | |
| CN212136443U (en) | Bidirectional patch transient voltage suppression diode | |
| CN202487575U (en) | Composite diode structure | |
| CN201829490U (en) | Chip area punching integrated circuit lead frame | |
| CN201773836U (en) | Package lead of integrated circuit device | |
| CN203367266U (en) | Encapsulation structure for buffering chip surface solder dosage | |
| CN203118995U (en) | Anti-pore diode device | |
| CN202352651U (en) | Packaging structure of solid state disk (SSD) | |
| CN201450005U (en) | Three-end voltage stabilizer | |
| CN201994247U (en) | Radio frequency switch | |
| CN203386741U (en) | Pin frame | |
| CN204029816U (en) | A kind of chip diode | |
| CN204375740U (en) | High-density integrated circuit package structure | |
| CN204464278U (en) | A kind of anti-reverse integrated circuit package structure | |
| CN210349824U (en) | SMD diode with jump piece structure | |
| CN211295074U (en) | SOT series high-power ultralow-capacity-value electrostatic protection chip packaging structure | |
| CN210349811U (en) | PCB (printed circuit board) matched with low-loss wireless radio frequency chip in packaging manner | |
| CN204348705U (en) | A kind of capsulation body of semiconductor ship of high reliability and low cost |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee after: Changzhou Galaxy century microelectronics Limited by Share Ltd Address before: 213022 Chaohu Road, Xinbei District, Jiangsu, China, No. 208, No. Patentee before: Changzhou Galaxy Century Micro-Electronics Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110518 |
|
| CX01 | Expiry of patent term |