CN210349824U - SMD diode with jump piece structure - Google Patents
SMD diode with jump piece structure Download PDFInfo
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- CN210349824U CN210349824U CN201921613005.6U CN201921613005U CN210349824U CN 210349824 U CN210349824 U CN 210349824U CN 201921613005 U CN201921613005 U CN 201921613005U CN 210349824 U CN210349824 U CN 210349824U
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- sheet
- platform sheet
- diode
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- upper platform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8534—Bonding interfaces of the connector
- H01L2224/85345—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
The utility model provides a patch diode with a jumper structure, which comprises an insulating packaging body, wherein a first conductive pin, a diode chip, a conductive jumper and a second conductive pin are arranged in the insulating packaging body, and a first welding layer is connected between the bottom of the diode chip and the top of the first conductive pin; the conductive jumper comprises a first upper platform sheet, a first bending sheet and a first lower platform sheet which are sequentially connected, and a second welding layer is connected between the top of the diode chip and the bottom of the first upper platform sheet; the second conductive pin comprises a second upper platform sheet, a second bending sheet and a second lower platform sheet which are sequentially connected, and a third welding layer is connected between the bottom of the first lower platform sheet and the top of the second upper platform sheet. The utility model discloses can effectively release the inside stress of insulating packaging body, can avoid insulating packaging body breaking occur, in addition, can avoid welded structure disconnection and influence the function of SMD diode.
Description
Technical Field
The utility model relates to a SMD diode specifically discloses a SMD diode with jump piece structure.
Background
The patch type diode mainly comprises an insulation packaging body, a diode chip and two conductive pins, wherein one end of each of the two conductive pins protrudes out of the insulation packaging body, and the diode chip is welded between the two conductive pins. Diodes are commonly used to apply their rectifying function.
The preparation of SMD diode is welding diode chip and each circuit earlier, encapsulation injection-molding process is carried out to rethread injection molding machine, the back of moulding plastics, obtain the insulating packaging body that has fixed knot structure, the in-process of moulding plastics, the melting plastic can be to inside diode chip, structures such as conduction pin form the extrusion, and become solid-state plastic from the liquid and can form internal stress, positions such as the inside welding part of insulating packaging body can constantly be dragged by the stress, lead to insulating packaging body to take place the fracture very easily, and lead to the welding part to split very easily and lead to forming defects such as open circuit.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a chip-on-chip diode having a jumper structure, which can effectively release the stress inside the insulating package and ensure the performance of the chip-on-chip diode, in order to solve the problems in the prior art.
In order to solve the prior art problem, the utility model discloses a SMD diode with a jumper structure, which comprises an insulating packaging body, wherein a first conductive pin, a diode chip, a conductive jumper and a second conductive pin are arranged in the insulating packaging body, and a first welding layer is connected between the bottom of the diode chip and the top of the first conductive pin; the conductive jumper comprises a first upper platform sheet, a first bending sheet and a first lower platform sheet which are sequentially connected, wherein the first upper platform sheet and the first lower platform sheet are respectively connected with the upper end and the lower end of the first bending sheet, and a second welding layer is connected between the top of the diode chip and the bottom of the first upper platform sheet; the second conductive pin comprises a second upper platform sheet, a second bending sheet and a second lower platform sheet which are sequentially connected, the second upper platform sheet and the second lower platform sheet are respectively connected with the upper end and the lower end of the second bending sheet, and a third welding layer is connected between the bottom of the first lower platform sheet and the top of the second upper platform sheet.
Furthermore, a welding lug is integrally formed at the bottom of the first upper platform sheet, the welding lug is connected with the top of the diode chip, and the welding lug is positioned in the second welding layer.
Furthermore, the top of the second upper platform sheet is integrally formed with a limiting bump, and the limiting bump is located on one side of the first lower platform sheet, which is far away from the diode chip.
Furthermore, the limiting convex block is a triangular prism, and the inclined plane of the limiting convex block is opposite to the first lower platform sheet.
Further, the third welding layer is a conductive silver glue layer.
The utility model has the advantages that: the utility model discloses a SMD diode with jump piece structure is provided with special jump piece structure, can effectively release the inside stress of insulating packaging body, can avoid insulating packaging body to take place the fracture, and the position between electrically conductive pin and the insulating packaging body is more reliable, can ensure SMD diode's performance, in addition, can effectively ensure each welded structure's of insulating packaging body inside reliability, avoid welded structure disconnection and influence SMD diode's function.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
The reference signs are: the diode package comprises an insulating package body 10, a first conductive pin 20, a diode chip 30, a first welding layer 31, a second welding layer 32, a conductive jumper sheet 40, a first upper platform sheet 41, a welding lug 411, a first bending sheet 42, a first lower platform sheet 43, a second conductive pin 50, a second upper platform sheet 51, a limiting lug 511, a second bending sheet 52, a second lower platform sheet 53 and a third welding layer 60.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1.
The embodiment of the utility model discloses SMD diode with jump piece structure, including insulating packaging body 10, be equipped with first conductive pin 20 in insulating packaging body 10, diode chip 30, conductive jump piece 40 and second conductive pin 50, preferably, first conductive pin 20 is straight conducting strip, the bottom of first conductive pin 20 and the bottom of second conductive pin 50 all expose with insulating packaging body 10 is outside, preferably, first conductive pin 20 and second conductive pin 50 all have one end to bulge outside insulating packaging body 10, be connected with first welding layer 31 between the bottom electrode of diode chip 30 and the top of first conductive pin 20; the conductive jumper 40 comprises a first upper platform sheet 41, a first bending sheet 42 and a first lower platform sheet 43 which are connected in sequence, the first upper platform sheet 41, the first bending sheet 42 and the first lower platform sheet 43 form the conductive jumper 40 of an integrated structure, the first upper platform sheet 41 and the first lower platform sheet 43 are respectively connected with the upper end and the lower end of the first bending sheet 42, the first upper platform sheet 41 is positioned on one side of the first bending sheet 42 close to the diode chip 30, the first lower platform sheet 43 is positioned on one side of the first bending sheet 42 away from the diode chip 30, a second welding layer 32 is connected between the top electrode of the diode chip 30 and the bottom of the first upper platform sheet 41, and preferably, the first welding layer 31 and the second welding layer 32 are both solder layers; the second conductive pin 50 includes a second upper platform sheet 51, a second bending sheet 52 and a second lower platform sheet 53 connected in sequence, the second upper platform sheet 51, the second bending sheet 52 and the second lower platform sheet 53 form the second conductive pin 50 of an integrated structure, preferably, the second lower platform sheet 53 protrudes out of one side of the insulating package 10, a bottom surface of the second lower platform sheet 53, a bottom surface of the first conductive pin 20 and a bottom surface of the insulating package 10 are coplanar, the second upper platform sheet 51 and the second lower platform sheet 53 are respectively connected to upper and lower ends of the second bending sheet 52, the second upper platform sheet 51 is located on one side of the second bending sheet 52 close to the diode chip 30, the second lower platform sheet 53 is located on one side of the second bending sheet 52 far from the diode chip 30, and a third welding layer 60 is connected between a bottom of the first lower platform sheet 43 and a top of the second upper platform sheet 51.
The top of the diode chip 30 is connected with the second conductive pin 50 through the conductive jumper 40, so that the stress inside the insulating packaging body 10 can be effectively released after injection molding, the conductive pins can be prevented from deforming in the injection molding process, the structure between each conductive pin and the insulating packaging body 10 is firmer and more reliable, meanwhile, the insulating packaging body 10 can be effectively prevented from being broken due to the internal stress, the reliability of each welding structure inside the insulating packaging body 10 can be ensured, and the finally obtained performance of the surface mount diode can be effectively ensured.
The utility model discloses be provided with special jump piece structure, can effectively release the inside stress of insulating packaging 10, can avoid insulating packaging 10 to break off, and the position between electrically conductive pin and the insulating packaging 10 is more reliable, can ensure the performance of SMD diode, in addition, can effectively ensure the inside each welded structure's of insulating packaging 10 reliability, avoid the welded structure disconnection and influence SMD diode's function.
In this embodiment, the solder bump 411 is integrally formed at the bottom of the first upper platform sheet 41, the solder bump 411 is connected to the top electrode of the diode chip 30, and the solder bump 411 is located in the second solder layer 32, so that the reliability of the structure of the second solder layer 32 can be effectively improved, and the probability of forming the air hole in the second solder layer 32 can be reduced.
In this embodiment, the limiting bump 511 is integrally formed on the top of the second upper platform sheet 51, and the limiting bump 511 is located on one side of the first lower platform sheet 43 away from the diode chip 30, so as to effectively limit the position between the second upper platform sheet 51 and the first lower platform sheet 43, and ensure that the connection structure between the conductive jumper sheet 40 and the second conductive pin 50 is stable and reliable when the conductive jumper sheet 40 releases the stress.
Based on the above embodiment, the limiting convex block 511 is a falling triangular prism, and the inclined plane of the limiting convex block 511 is just opposite to the first lower platform sheet 43, i.e. the tip structure at the top of the limiting convex block 511, can effectively provide a certain deformation activity space for the stress releasing process, can adapt to the small-range deformation formed by the stress releasing process, and can further improve the firmness and stability of the overall structure.
Based on any of the above embodiments, the third welding layer 60 is a conductive silver adhesive layer, and the conductive silver adhesive has good conductivity and certain deformability, so that the effect of releasing stress between the conductive jumper 40 and the second conductive pin 50 can be further improved.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (5)
1. A patch type diode with a jumper structure is characterized by comprising an insulating packaging body (10), wherein a first conductive pin (20), a diode chip (30), a conductive jumper sheet (40) and a second conductive pin (50) are arranged in the insulating packaging body (10), and a first welding layer (31) is connected between the bottom of the diode chip (30) and the top of the first conductive pin (20); the conductive jumper (40) comprises a first upper platform sheet (41), a first bending sheet (42) and a first lower platform sheet (43) which are sequentially connected, the first upper platform sheet (41) and the first lower platform sheet (43) are respectively connected with the upper end and the lower end of the first bending sheet (42), and a second welding layer (32) is connected between the top of the diode chip (30) and the bottom of the first upper platform sheet (41); the second conductive pin (50) comprises a second upper platform sheet (51), a second bending sheet (52) and a second lower platform sheet (53) which are sequentially connected, the second upper platform sheet (51) and the second lower platform sheet (53) are respectively connected with the upper end and the lower end of the second bending sheet (52), and a third welding layer (60) is connected between the bottom of the first lower platform sheet (43) and the top of the second upper platform sheet (51).
2. The chip mounted diode with a chip jumper structure according to claim 1, wherein a solder bump (411) is integrally formed on a bottom of the first upper platform sheet (41), the solder bump (411) is connected to a top of the diode chip (30), and the solder bump (411) is located in the second solder layer (32).
3. The chip mounter diode with chip jumper structure according to claim 1, wherein a limiting bump (511) is integrally formed on the top of the second upper platform sheet (51), and the limiting bump (511) is located on the side of the first lower platform sheet (43) far away from the diode chip (30).
4. The chip mounter diode according to claim 3, wherein said limiting bump (511) is a triangular prism, and the inclined surface of said limiting bump (511) faces said first lower platform sheet (43).
5. The chip mounted diode with a jumper structure according to any one of claims 1-4, wherein the third solder layer (60) is a conductive silver glue layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921613005.6U CN210349824U (en) | 2019-09-25 | 2019-09-25 | SMD diode with jump piece structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921613005.6U CN210349824U (en) | 2019-09-25 | 2019-09-25 | SMD diode with jump piece structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210349824U true CN210349824U (en) | 2020-04-17 |
Family
ID=70178042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921613005.6U Active CN210349824U (en) | 2019-09-25 | 2019-09-25 | SMD diode with jump piece structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210349824U (en) |
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2019
- 2019-09-25 CN CN201921613005.6U patent/CN210349824U/en active Active
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