CN201590435U - 一种led的封装结构 - Google Patents

一种led的封装结构 Download PDF

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CN201590435U
CN201590435U CN2010200228405U CN201020022840U CN201590435U CN 201590435 U CN201590435 U CN 201590435U CN 2010200228405 U CN2010200228405 U CN 2010200228405U CN 201020022840 U CN201020022840 U CN 201020022840U CN 201590435 U CN201590435 U CN 201590435U
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circular groove
plastic casing
silica gel
heat radiation
copper post
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洪从胜
李明
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Jiangsu Allray Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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Abstract

本实用新型公开了一种LED的封装结构，散热铜柱的顶面上固定蓝光芯片，金线焊接于蓝光芯片，蓝光芯片上覆盖荧光粉，塑料壳体的下半部分固定于散热铜柱两侧，引线支架的一端固定于塑料壳体的下半部内；散热铜柱的下底面低于塑料壳体的下底面，塑料壳体的上半部分为中心对称的圆形凹槽结构，该圆形凹槽底面低于散热铜柱的上表面，该圆形凹槽的直径大于散热铜柱相应位置的直径，该圆形凹槽内具有体积与圆形凹槽体积相同的硅胶，硅胶的出光面为平面型出光面；或该圆形凹槽内具有体积大于圆形凹槽体积的硅胶，硅胶的出光面为凸球型出光面。本实用新型工艺简单、良率高、耐温能力强，可制作多种发光面形状，半峰值光强角可在60～75℃间选择。

Description

一种LED的封装结构
技术领域
本实用新型涉及照明领域的半导体发光二极管LED光源，特别涉及高功率白光LED封装结构。
背景技术
发光二极管(LED)是一种新型光源，和传统光源相比它具有很多优点：长寿、节能、低电压、体积小、无污染。LED发光效率在不断提高，白光LED的发光效率已经超过了普通荧光灯。
目前，照明用高功率1W、3W的LED封装结构主要以朗伯型仿流明结构为主，采用蓝光芯片，芯片上覆盖有可激发出黄光的荧光粉，芯片下有一个散热底座，散热底座上盖有一个半球型PC(聚碳酸酯)透镜，在PC透镜内灌封有填充硅胶，填充硅胶包裹住芯片。在PC透镜旁设有塑胶壳体，这种结构的缺陷是：1、在透镜内灌封硅胶，工艺复杂且容易产生气泡，良品率低；2、PC的耐高温能力差，一般不能超过130摄氏度，不能使用250摄氏度的回流焊工艺焊接；3、发光角度不大，照度不均匀。
发明内容
本实用新型为克服现有LED封装结构的缺陷，提供了一种封装工艺简单、耐温能力强、发光角度大的照明用高功率LED封装结构。
本实用新型采用的技术方案是：散热铜柱的顶面上固定蓝光芯片，金线焊接于蓝光芯片，蓝光芯片上覆盖荧光粉，塑料壳体的下半部分固定于散热铜柱两侧，引线支架的一端固定于塑料壳体的下半部内；散热铜柱的下底面低于塑料壳体的下底面，塑料壳体的上半部分为中心对称的圆形凹槽结构，该圆形凹槽底面低于散热铜柱的上表面，该圆形凹槽的直径大于散热铜柱相应位置的直径，该圆形凹槽内具有体积与圆形凹槽体积相同的硅胶，硅胶的出光面为平面型出光面；或该圆形凹槽内具有体积大于圆形凹槽体积的硅胶，硅胶的出光面为凸球型出光面。
本实用新型的有益效果是：
1、可不采用PC透镜硅胶灌封工艺，而采用直接覆盖硅胶的工艺，工艺简单，良率高。
2、由于不采用耐高温能力低的PC材料，整个产品的耐温能力强，可采用回流焊工艺焊接。
3、可制作多种发光面形状，从而调节出光角度，半峰值光强角可在60～75℃间选择。
附图说明
下面结合附图和具体实施方式对本实用新型作进一步详细说明。
图1是本实用新型出光面为平面型出光面8的结构示意图。
图2是本实用新型出光面为凸球型出光面9的结构示意图。
图中：1、引线支架；2、塑料壳体；3、硅胶；4、散热铜柱；5、荧光粉；6、蓝光芯片；7、金线；8、平面型出光面；9、凸球型出光面。
具体实施方式
如图1、2所示，在散热铜柱4的顶面上固定蓝光芯片6，金线7焊接在蓝光芯片6上，使电路联通。蓝光芯片6上覆盖有可激发出黄光的荧光粉5。塑料壳体2的下半部分固定在散热铜柱4的两侧，引线支架1的一端固定在塑料壳体2的下半部内。散热铜柱4的下底面低于塑料壳体2的下底面，即散热铜柱4下底面从塑料壳体2中露出。塑料壳体2的上半部分形成中心对称的圆形凹槽结构，该圆形凹槽底面低于散热铜柱4的上表面，该圆形凹槽的直径大于散热铜柱4相应位置的直径。如图1，在该圆形凹槽内可填充液态的硅胶3，硅胶3的体积与圆形凹槽体积相同，这样，硅胶3的出光面形成如图1所示的平面型出光面8。如图2，在该圆形凹槽内填充的硅胶3的体积可大于圆形凹槽的体积，这样，硅胶3的出光面形成凸球型出光面9，填充时，由于表面张力，硅胶不会从圆形凹槽的上口溢出，而会形成向上拱起的凸球型。
由于上述平面型出光面8、凸球型出光面9的高度都高于散热铜柱4上表面，所以封胶时可直接在圆形凹槽内填充硅胶3，填充时，控制胶水的重量可对LED出光面形状进行调节，当出光面为平面型出光面8时，发光角度较大，半峰值光强角为75℃左右；当出光面为凸球型出光面9时，发光角度较小，半峰值光强角为60℃左右。

Claims (2)

1.一种LED的封装结构，散热铜柱(4)的顶面上固定蓝光芯片(6)，金线(7)焊接于蓝光芯片(6)，蓝光芯片(6)上覆盖荧光粉(5)，其特征是：塑料壳体(2)的下半部分固定于散热铜柱(4)两侧，引线支架(1)的一端固定于塑料壳体(2)下半部内；散热铜柱(4)的下底面低于塑料壳体(2)的下底面，塑料壳体(2)的上半部分为中心对称的圆形凹槽结构，该圆形凹槽底面低于散热铜柱(4)的上表面，该圆形凹槽的直径大于散热铜柱(4)相应位置的直径，该圆形凹槽内具有体积与圆形凹槽体积相同的硅胶(3)，硅胶(3)的出光面为平面型出光面(8)。
2.一种LED的封装结构，散热铜柱(4)的顶面上固定蓝光芯片(6)，金线(7)焊接于蓝光芯片(6)，蓝光芯片(6)上覆盖荧光粉(5)，其特征是：塑料壳体(2)的下半部分固定于散热铜柱(4)两侧，引线支架(1)的一端固定于塑料壳体(2)的下半部内；散热铜柱(4)的下底面低于塑料壳体(2)的下底面，塑料壳体(2)的上半部分为中心对称的圆形凹槽结构，该圆形凹槽底面低于散热铜柱(4)的上表面，该圆形凹槽的直径大于散热铜柱(4)相应位置的直径，该圆形凹槽内具有体积大于圆形凹槽体积的硅胶(3)，硅胶(3)的出光面为凸球型出光面(9)。
CN2010200228405U 2010-01-08 2010-01-08 一种led的封装结构 Expired - Lifetime CN201590435U (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163599A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN102163600A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN102163601A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN102163598A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN103000793A (zh) * 2011-09-14 2013-03-27 华夏光股份有限公司 发光二极管封装结构与封装方法
CN105355760A (zh) * 2014-11-11 2016-02-24 易美芯光（北京）科技有限公司 一种广色域显示的led器件

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163599A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN102163600A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN102163601A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN102163598A (zh) * 2010-12-31 2011-08-24 东莞市万丰纳米材料有限公司 Led封装模块
CN103000793A (zh) * 2011-09-14 2013-03-27 华夏光股份有限公司 发光二极管封装结构与封装方法
CN105355760A (zh) * 2014-11-11 2016-02-24 易美芯光（北京）科技有限公司 一种广色域显示的led器件

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