WO2010066128A1 - Led小功率发光芯片的封装模块 - Google Patents

Led小功率发光芯片的封装模块 Download PDF

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Publication number
WO2010066128A1
WO2010066128A1 PCT/CN2009/072419 CN2009072419W WO2010066128A1 WO 2010066128 A1 WO2010066128 A1 WO 2010066128A1 CN 2009072419 W CN2009072419 W CN 2009072419W WO 2010066128 A1 WO2010066128 A1 WO 2010066128A1
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Prior art keywords
light
emitting chip
led
silica gel
layer
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PCT/CN2009/072419
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English (en)
French (fr)
Inventor
张誾怿
林小建
童克俭
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上海恒烁光电科技有限公司
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Publication of WO2010066128A1 publication Critical patent/WO2010066128A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias

Definitions

  • the invention relates to a package structure of an LED light-emitting chip, in particular to a planar package module of an LED low-power light-emitting chip.
  • LED Light Emitting Diode
  • LED is a component made of semiconductor material. It is also a very fine solid-state light source that converts electrical energy into light. It is small in size, long in life, low in driving voltage, fast in response rate, and shock-resistant. It is very good, and it can meet the needs of light, thin and miniaturized various applications. It has become a very popular product in daily life.
  • Light-emitting diodes use various compound semiconductor materials and component structure changes to design red, orange, yellow, green, blue, purple and other colors, as well as infrared, ultraviolet and other invisible LEDs. Suitable for making high-brightness LEDs above lOOOmed, the wavelengths are from AIGaAS, InGaAIP and InGaN.
  • the diode of the bracket package has poor heat dissipation, the illumination angle is small, and the light is glare;
  • SMD diode brightness is poor, can not meet the lighting requirements
  • the diode of the traditional package has a large attenuation, and the brightness cannot be guaranteed by long-term use.
  • a package module for an LED low-power light-emitting chip capable of avoiding the problems existing in the conventional white LED low-power light-emitting chip with conventional process packaging is provided. .
  • a package module of an LED low-power light-emitting chip the module comprises an aluminum substrate composed of an aluminum substrate copper foil layer, an insulating thermal conductive adhesive layer and an aluminum base layer, and an LED light-emitting chip, wherein the LED light-emitting chip is disposed on an aluminum substrate, the aluminum substrate A counterbore is formed in the position of the LED light-emitting chip to remove the aluminum substrate copper foil layer and the insulating thermal conductive adhesive layer on the corresponding position on the aluminum substrate, and is filled and cured by the high-thermal conductive silver glue; the LED light-emitting chip is connected to the aluminum substrate through the metal wire.
  • the circuit on the copper foil layer is encapsulated by a transparent silica gel layer and a silica gel phosphor layer to form a light-emitting module.
  • the opening diameter of the counterbore is not less than the LED light emitting chip, so that the LED light emitting chip is completely supported by the high thermal conductive silver glue therein. This allows the heat generated by the chip to be quickly directed to the aluminum base, which fully satisfies the heat dissipation requirements of the chip.
  • the aluminum substrate is disposed on the surface of the LED light-emitting chip except for the position of the fixed chip, and all of the reflective white paint is applied.
  • This layer of high-reflective white paint can increase the brightness of the device by more than 40%.
  • the reflective white paint is a polyester white paint having a light reflectance of more than 85 % and a whiteness of more than 90.
  • the transparent silica gel layer comprises a light-mixing transparent silica gel layer and a phosphor silica gel layer, wherein the light-mixing transparent silica gel layer is a high-transparent silica gel layer having a transparency of more than 99%, which covers the LED light-emitting chip, and enables the light emitted from the side of the LED light-emitting chip to be
  • the refracted light is formed in the silica gel layer, and the refracted light is reflected into the phosphor silica gel layer through the reflective white lacquer layer on the aluminum substrate.
  • the light emitted by the LED light-emitting chip is dispersed in parallel to form a planar overall light-emitting effect, which improves the light-emitting angle, so that the human vision is indistinguishable from the conventional illumination light.
  • the phosphor silica gel layer is obtained by uniformly dispersing a phosphor on a transparent silica gel, and is uniformly disposed on the light-mixing transparent silica gel layer.
  • the utility model can avoid the direct contact between the phosphor and the LED light-emitting chip, so as to avoid the extrusion of the LED light-emitting chip by the thermal expansion and contraction; the phosphor mixed with the transparent silica gel can greatly reduce the attenuation of the phosphor itself and can modulate various color temperatures;
  • the silica gel has a flow level, and the phosphor layer coated on the light-emitting chip is relatively uniform, so that the light-emitting module made by the invention is very good. Controls the color difference and the consistency is very good.
  • the light-emitting module can be spliced into a fluorescent tube, a ceiling lamp, a circular spotlight, and the like.
  • the invention obtained according to the above technical solution can effectively solve the problem of heat dissipation and attenuation of the LED light-emitting chip, and the light decay of the LED chip using the LED light after continuous illumination for 5,000 hours is between 1% and 3%;
  • the light-emitting module obtained by the invention has an illumination angle of more than 150° and a brightness of more than 90 ml/w, which fully satisfies the requirements of indoor illumination, and the emitted light is a plane-integrated light. Very consistent with traditional lighting patterns. This hair It makes it possible to apply small-power LED light-emitting chips in lighting.
  • the obtained light-emitting modules can be spliced into fluorescent tubes, ceiling lamps, and round spotlights with a brightness of 3 meters higher than conventional lighting sources. The power saving is over 55 %.
  • Figure 1 is a structural view of a die bond of the present invention.
  • Figure 2 is a structural view of the package of the present invention.
  • Figure 3 is a schematic diagram of the illumination of the present invention.
  • Figure 4 is a graph showing the aging experiment of the conventional process.
  • Figure 5 is a graph showing the aging experiment of the present invention.
  • Figure 6 is a schematic view showing the structure of the assembled lamp of the present invention.
  • Figure 7 is a schematic view showing the structure of the assembled lamp of the present invention.
  • the invention solves the problems existing in the practical application of the light-emitting module obtained by the conventional packaging method for the white LED low-power light-emitting chip for illumination, and adopts a plane of the LED low-power (0.06W-0.3W) light-emitting chip.
  • Package module
  • the principle realized by the invention is to design a series-parallel circuit of LED chips on a certain area of aluminum substrate, fix a certain number of LED low-power light-emitting chips on the aluminum substrate, and make a piece after welding, gluing and the like.
  • Light-emitting modules of a certain power which are combined and spliced into various forms for making a lighting device with corresponding current and voltage.
  • the package module of the LED low-power light-emitting chip provided by the invention is composed of an aluminum substrate 1 and an LED light-emitting chip 2, and the LED light-emitting chip 2 is fixed on the aluminum substrate 1.
  • the aluminum substrate 1 of the present invention comprises an aluminum base layer 101, an insulating thermal conductive adhesive layer 102, and an aluminum substrate copper foil layer 103, which are sequentially assembled from the bottom to the top, wherein the aluminum substrate copper foil layer 103 It is a circuit layer on which a series/parallel circuit of an LED light-emitting chip is designed (which is a prior art and will not be described).
  • the aluminum substrate has a relatively good heat dissipation effect, the heat dissipation requirement of the LED light emitting chip is still Not enough, the thermal conductivity of the insulating thermal conductive adhesive in the better aluminum substrate is not more than 3wm/k, and the LED light-emitting chip is directly fixed on the aluminum substrate after 1000 hours (single current 20mA) continuously illuminating and the light decay is about 10% (see the figure). 4)).
  • the present invention has a counterbore 7 at a position where the aluminum substrate 1 is fixed to the LED light-emitting chip 2, and the aluminum substrate copper foil layer 103 and the insulating thermal conductive adhesive layer 102 at corresponding positions are removed.
  • the opening of the counterbore 7 is not less than the bottom surface of the LED light emitting chip, and the depth is about 0.2 mm, and the opening of the counterbore 7 in the aluminum substrate copper foil layer 103 is larger than the opening of the insulating thermal conductive adhesive layer 102 (as shown in FIG. 1).
  • the entire counterbore 7 is filled and cured with a high thermal conductive silver paste 3, so that the LED light emitting chip 2 is completely supported by the high thermal conductive silver paste 3 therein, and the LED light emitting chip 2 is connected to the aluminum substrate copper foil layer 103 through the metal wire 8 at this time. Circuit. Since the thermal conductivity of the high thermal conductive silver paste 3 used in the present invention is greater than 15 wm/k, and the above structure is added, the heat generated by the chip is quickly guided to the aluminum base, which fully satisfies the heat dissipation requirement of the chip, and the LED using the same method After 1000 hours (single current 20mA), the light decay of the light-emitting chip is between 1% and 3%. According to the theoretical calculation, the device continuously lights up for 30,000 hours and the light decay is within 20%. According to the above technical solution, The present invention, as shown in Fig. 5, has a light decay of less than 3% after continuous illumination for 5,000 hours.
  • the illumination angle of the LED light-emitting chip is inversely proportional to the brightness.
  • the LED light-emitting module obtained by the invention has an illumination angle of more than 150° and a brightness of more than 90 ml/w, which fully satisfies indoor lighting requirements.
  • the emitted light is a plane-integrated light, which is very consistent with the traditional illumination type.
  • a reflective white lacquer layer 4 As shown in Fig. 2, first, on the surface of the aluminum substrate 1, except for the position where the chip is fixed, all of the reflective white lacquer is applied to form a reflective white lacquer layer 4.
  • the invention adopts a highly reflective polyester white paint having a light reflectance of more than 85 % and a whiteness of more than 90. This high reflective white paint can increase the brightness of the device by more than 40%.
  • the LED light-emitting chip 2 is covered with a high transparent silicone package, and the transparency thereof is greater than 99% to form a light-mixing transparent silica gel layer 5.
  • the layer can disperse a part of the light emitted by the LED light-emitting chip 2 in parallel to form a planar overall light-emitting effect, thereby improving the light-emitting angle, so that the human vision is indistinguishable from the conventional illumination light.
  • the layer causes the light 202 emitted from the front surface of the LED light-emitting chip 2 to vertically enter the phosphor silica gel layer 6; at the same time, the light 201 emitted from the side of the LED light-emitting chip 2 is in transparent silicon.
  • a plurality of refracted lights 203 are formed in the glue layer, and the refracted lights 203 are reflected into the phosphor layer 6 through a large portion of the reflective white lacquer layer 4 (given specific parameters) coated on the aluminum substrate, and the visual effect is formed.
  • the whole module is illuminated, so that the invention achieves an illumination angle of more than 150° and a brightness of more than 90 ml/w, which fully satisfies the requirements of indoor illumination, and the emitted light is a plane-integrated light, which is very consistent with the conventional illumination light type.
  • a layer of phosphor silica gel layer 6 is coated on the light-mixing transparent silica gel layer 5, which is obtained by uniformly dispersing the phosphor powder on the transparent silica gel, and uniformly disposed on the light-mixing transparent silica gel layer.
  • the phosphor Due to the influence of stress and temperature, the phosphor is attenuated.
  • the phosphor is directly on the light-emitting chip and is covered with an epoxy resin.
  • the heat generated by the light-emitting chip has a great influence on the phosphor, and the large stress generated by the thermal expansion and contraction of the epoxy resin causes a crushing damage to the light-emitting chip and the phosphor.
  • the phosphor silica gel layer 6 provided in the present invention can avoid direct contact between the phosphor and the LED light-emitting chip, thereby avoiding the above-mentioned situation, causing the thermal expansion and contraction to squeeze the LED light-emitting chip, and causing the phosphor to attenuate.
  • the light-emitting chips are individually packaged, and the brightness of each chip is different, and the amount of phosphor on the chip is also slightly different, which causes color difference in the same batch of products.
  • the phosphor silica gel layer 6 designed in the present invention can also avoid the above-mentioned occurrence, which can greatly reduce the attenuation of the phosphor itself and can modulate various color temperatures.
  • the phosphor is evenly dispersed in the transparent silica gel, and the silica gel has a flow level, and the phosphor silica gel layer coated on the light-emitting chip is relatively uniform, so that the light-emitting module made by the invention is very Good control of the color difference, the consistency is very good.
  • a light-emitting module can be obtained, which can be spliced into various light sources such as a fluorescent tube, a ceiling lamp, a circular spot lamp, and the like, and the various light sources are spliced into 3
  • various light sources such as a fluorescent tube, a ceiling lamp, a circular spot lamp, and the like
  • the various light sources are spliced into 3
  • the light-emitting modules designed according to the present invention are spliced into 16W LED fluorescent lamps and 40W Phillips fluorescent lamps, and 8W LED fluorescent lamps and 20W Phillips fluorescent lamps for comparison test data.
  • Table 1 [3 ⁇ 4 degree 16W LED fluorescent lamp 40W Phillips fluorescent lamp remarks
  • the brightness of the 16W fluorescent lamp is greater than that of the 36W Philips fluorescent lamp, and the brightness of the 3.5W circular spotlight is greater than the brightness of the 9W energy saving lamp.

Description

LED小功率发光芯片的封装模块 技术领域：
本发明涉及一种 LED发光芯片的封装结构， 特别涉及一种 LED小功率发 光芯片的平面封装模块。
背景技术：
发光二极管 （Light Emitting Diode; LED) 是半导体材料制成的元件， 也 是一种极细微的固态光源， 可将电能转化为光， 不但体积小， 且寿命长、 驱动 电压低、 反应速率快、 耐震性特佳， 能够配合各种应用设备的轻、 薄及小型化 的需求， 早己成为日常生活中十分普及的产品。
发光二极管是利用各种化合物半导体材料及元件结构的变化， 设计出红、 橙、 黄、 绿、 蓝、 紫等各种颜色， 以及红外、 紫外等不可见光 LED。 适合制作 lOOOmed以上高亮度 LED的材料， 其波长由长至短分别为 AIGaAS、 InGaAIP 和 InGaN。
目前， 照明用白光 LED小功率发光芯片传统的封装形式有两种： 一、 是 用支架封装成单颗 LED发光二极管； 二、 是用极小的铝基板封装成单颗发光 二极管 （SMD)。
上述两种封装方法在实际应用中存在以下缺点：
1、 支架封装的二极管散热差， 发光角度小， 光线刺眼；
2、 SMD二极管亮度差， 达不到照明要求；
3、 成批生产的管子色差比较大， 经过分光分色后， 使用中衰减的幅度不 一， 还是会形成色差；
4、 单颗封装抗静电能力差；
5、 传统封装的二极管衰减大， 长期使用无法保证亮度。
发明内容：
本发明所要解决的技术问题是： 针对上述现有技术的不足， 提供一种能够 避免现有照明用白光 LED小功率发光芯片采用传统工艺封装时所存在的问题 的 LED小功率发光芯片的封装模块。
为了解决上述技术问题， 本发明采用如下的技术方案来实现： LED小功率发光芯片的封装模块，该模块包括由铝基板铜箔层、绝缘导热 胶层以及铝基层依次组成的铝基板以及 LED发光芯片， 所述 LED发光芯片安 置在铝基板上， 该铝基板在 LED发光芯片的安置位置上开设有一沉孔， 去除 铝基板上对应位置上的铝基板铜箔层和绝缘导热胶层，并用高导热银胶填充固 化； LED发光芯片通过金属线接入铝基板铜箔层上的电路， 该 LED发光芯片 通过透明硅胶层、 硅胶荧光粉层封装形成一发光模块。
所述沉孔的开口直径不小于 LED发光芯片， 使 LED发光芯片完全由其内 的高导热银胶支撑。这样使芯片产生的热量迅速导向铝基， 充分满足了芯片散 热要求。
所述铝基板安置 LED发光芯片的表面上除固定芯片的位置以外， 全部涂 敷反光白漆。 这层高反光白漆能使本装置的发光亮度提高 40%以上。
所述反光白漆为一种反光率大于 85 %、 白度大于 90的聚脂白漆。
所述透明硅胶层包括混光透明硅胶层以及荧光粉硅胶层，该混光透明硅胶 层为透明度大于 99%的高透明硅胶层，其覆盖 LED发光芯片， 能够使 LED发 光芯片侧面发出的光在该硅胶层中形成折射光，此折射光再通过铝基板上的反 光白漆层反射进荧光粉硅胶层。 使 LED发光芯片发出的光平行分散一部分， 形成平面整体发光效果， 提高了发光角度， 使人视觉与传统照明光没有区别。
所述荧光粉硅胶层由荧光粉均匀分散在透明硅胶得到，其均匀设在混光透 明硅胶层上。 其能够避免荧光粉与 LED发光芯片的直接接触， 以免造成热胀 冷缩对 LED发光芯片的挤压； 荧光粉拌透明硅胶能大幅度减小荧光粉自身的 衰减并能调制出各种色温； 同时由于透明硅胶的混光作用， 加上荧光粉均匀分 散在透明硅胶中， 硅胶具有流动水平性， 涂敷在发光芯片上的荧光粉层比较均 匀， 使得本发明制作成的发光模块， 很好控制了色差色彩， 一致度非常好。
所述发光模块能够拼接成的日光灯管， 吸顶灯， 圆形射灯等各灯式。 根据上述技术方案得到的本发明能够有效的解决 LED发光芯片的散热和 衰减问题，使用这种方式的 LED芯片经过 5000小时连续点亮后的光衰在 1 %〜 3 %之间； 同时本发明还解决了 LED小功率芯片发光角度与亮度矛盾， 使得本 发明得到的发光模块的发光角度大于 150°, 亮度大于 90ml/w， 完全满足室内 照明要求， 而且发出的光是平面整体型的光， 与传统照明光型非常一致。 本发 明使小功率 LED发光芯片在照明中应用成为可能， 其得到的发光模块可拼接 成的日光灯管， 吸顶灯， 圆形射灯在 3米层高的情况下， 比传统的照明光源亮 度高， 节电达 55 %以上。
以下结合附图和具体实施方式来进一步说明本发明。
附图说明：
图 1为本发明固晶的结构图。
图 2为本发明封装后的结构图。
图 3为本发明的发光原理图。
图 4为传统工艺的老化实验曲线图。
图 5为本发明的老化实验曲线图。
图 6为本发明拼装成灯的结构示意图。
图 7为本发明拼装成灯的结构示意图。
具体实施方式：
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解， 下面结合具体图示， 进一步阐述本发明。
本发明为了解决现有照明用白光 LED小功率发光芯片采用传统封装手段 得到的发光模块在实际应用中所存在的问题， 而采用了一种 LED 小功率 (0.06W-0.3W) 发光芯片的平面封装模块。
本发明实现的原理是在一定面积的铝基板上设计好 LED芯片的串并联电 路， 把一定数量的 LED小功率发光芯片固定到铝基板上， 经过焊线、 灌胶等 工艺后制作成一块具有一定功率的发光模块，这些发光模块再组合拼接成各种 形式， 供以相应的电流电压做成发光照明装置。
基于上述原理， 本发明具体实施参见图 1和图 2:
本发明提供的 LED小功率发光芯片的封装模块，该模块由铝基板 1和 LED 发光芯片 2组成， LED发光芯片 2固定在铝基板 1上。 参见图 1， 本发明中的 铝基板 1包括铝基层 101、 绝缘导热胶层 102以及铝基板铜箔层 103， 其由这 三层由下往上依次组合而成， 其中铝基板铜箔层 103 为电路层， 其上设计有 LED发光芯片的串 /并联电路 （其为现有技术， 不加以赘述）。
铝基板虽然有比较好的散热效果， 但是相对 LED发光芯片的散热要求还 不够，较好的铝基板中绝缘导热胶导热系数不超过 3wm/k， LED发光芯片直接 固定在铝基板上经过 1000小时（单颗电流 20mA)连续点亮后光衰在 10%左右 (参见图 4所示）。
为了解决 LED发光芯片散热和衰减问题， 本发明在铝基板 1固定 LED发 光芯片 2的位置上开设有一沉孔 7， 去除对应位置上的铝基板铜箔层 103和绝 缘导热胶层 102。 该沉孔 7的开口不小于 LED发光芯片的底面， 同时深度为 0.2mm左右， 同时该沉孔 7在铝基板铜箔层 103 的开口大于在绝缘导热胶层 102的开口 （如图 1所示）； 整个沉孔 7用高导热银胶 3填充固化， 使得 LED 发光芯片 2完全由其内的高导热银胶 3支撑， 此时 LED发光芯片 2通过金属 线 8连接铝基板铜箔层 103上的电路。由于本发明中采用的高导热银胶 3的导 热系数大于 15wm/k， 再加上上述的结构， 这样使芯片产生的热量迅速导向铝 基， 充分满足了芯片散热要求， 使用这种方式的 LED发光芯片经过 1000小时 (单颗电流 20mA) 连续点亮后的光衰在 1 %-3 %之间， 按照理论推算， 本装 置连续点亮 30000小时光衰在 20%以内，根据上述技术方案得到的本发明，如 图 5所示， 实际经过 5000小时连续点亮后， 其光衰在 3 %以内。
众所周知， LED发光芯片的发光角度与亮度是成反比的， 角度越大， 亮度 越低，本发明得到的 LED发光模块，其发光角度大于 150°,亮度大于 90ml/w， 完全满足室内照明要求， 而且发出的光是平面整体型的光， 与传统照明光型非 常一致。
为了达到上述目的， 本发明通过以下具体方式实现：
如图 2所示， 首先在铝基板 1的表面上除固定芯片的位置以外， 全部涂敷 反光白漆， 形成反光白漆层 4。 本发明采用一种高反光的聚脂白漆， 其反光率 大于 85 % , 且白度大于 90， 这层高反光白漆能使本装置的发光亮度提高 40% 以上。
再用高透明硅胶封装覆盖 LED发光芯片 2， 其透明度大于 99% , 形成一 混光透明硅胶层 5。该层能够 LED发光芯片 2发出的光平行分散一部分，形成 平面整体发光效果， 提高了发光角度， 使人视觉与传统照明光没有区别。 具体 实现参见图 3所示， 该层使得 LED发光芯片 2正面发出的光 202垂直的进入 到荧光粉硅胶层 6中； 同时使得 LED发光芯片 2侧面发出的光 201在透明硅 胶层中形成很多折射光 203， 这些折射光 203通过铝基板上涂设的反光白漆层 4大部分 （给出具体的参数） 反射进荧光粉硅胶层 6中， 给人形成的视觉效果 就是整个模块都在发光， 从而使得本发明达到发光角度大于 150°, 亮度大于 90ml/w, 完全满足室内照明要求， 而且发出的光是平面整体型的光， 与传统照 明光型非常一致的目的。
最后在混光透明硅胶层 5上封装覆盖一层荧光粉硅胶层 6， 其由荧光粉均 匀分散在透明硅胶得到， 且均匀设在混光透明硅胶层上。
由于应力与温度的影响会造成荧光粉的衰减，传统封装形式中荧光粉直接 点在发光芯片上， 外面包裹一层环氧树脂。发光芯片产生的热量对荧光粉有很 大影响，另外环氧树脂热胀冷缩产生的巨大应力对发光芯片和荧光粉产生挤压 破坏作用。
本发明中提供的荧光粉硅胶层 6能够避免荧光粉与 LED发光芯片的直接 接触， 从而能够避免上述情况造成热胀冷缩对 LED发光芯片的挤压， 以及引 起荧光粉的衰减。
传统封装形式中发光芯片都是单独封装， 每颗芯片的亮度有差别， 芯片上 的荧光粉的量也有微小的区别， 这就造成同批次的产品存在色差。本发明中设 计的荧光粉硅胶层 6同样能够避免上述情况的发生，其能大幅度减小荧光粉自 身的衰减并能调制出各种色温。 同时由于透明硅胶的混光作用， 加上荧光粉均 匀分散在透明硅胶中， 且硅胶具有流动水平性， 涂敷在发光芯片上的荧光粉硅 胶层比较均匀， 使得本发明制作成的发光模块很好的控制了色差色彩， 一致度 非常好。
如图 6到 7所示， 根据上述技术方案进行封装即可得到发光模块， 其能够 拼接成日光灯管、 吸顶灯、 圆形射灯等各式灯源， 且拼接成的各式灯源在 3米 层高的情况下， 比传统的照明光源亮度高， 节电达 55 %以上。
如表 1和表 2所示，分别为根据本发明设计到的发光模块，拼接成 16W 的 LED日光灯与 40W菲力普日光灯、 以及 8W的 LED日光灯与 20W菲力普日 光灯照度进行对比的测试数据： 表 1 [¾度 16W LED 日光灯 40W菲力普日光灯 备注
1米 245 Lux 160 Lux 16W LED 日光
1. 5米 142 Lux HOLux 灯光通量为 1360
2米 89 Lux 78 Lux 40W菲力普日光
2. 5米 65 Lux 60 Lux 灯光通量为 3600
3米 53 Lux 48 Lux 长度都是 120cm 表 2
[¾度 8W LED 日光灯 20W菲力普日光灯 备注
1米 146 Lux 98 Lux 8W LED 日光灯光通
1. 5米 76Lux 52 Lux 量为 650
2米 46 Lux 35 Lux 20W菲力普日光灯为
2. 5米 32 Lux 27 Lux 1300长度都是 60cm
3米 27Lux 25 Lux
根据上述数据可得本发明在照射范围相同的情况， 16W日光灯的亮度大于 36W飞利浦日光灯， 3.5W的圆形射灯的亮度大于 9W节能灯的亮度。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业 的技术人员应该了解， 本发明不受上述实施例的限制， 上述实施例和说明书中 描述的只是说明本发明的原理， 在不脱离本发明精神和范围的前提下， 本发明 还会有各种变化和改进， 这些变化和改进都落入要求保护的本发明范围内。 本 发明要求保护范围由所附的权利要求书及其等效物界定。

Claims

权利要求
1、 LED小功率发光芯片的封装模块， 该模块包括由铝基板铜箔层、 绝缘 导热胶层以及铝基层依次组成的铝基板以及 LED发光芯片， 其特征在于， 所 述 LED发光芯片安置在铝基板上， 该铝基板在 LED发光芯片的安置位置上开 设有一沉孔， 去除铝基板上对应位置上的铝基板铜箔层和绝缘导热胶层， 并用 高导热银胶填充固化； LED发光芯片通过金属线接入铝基板铜箔层上的电路， 该 LED发光芯片通过透明硅胶层封装形成一发光模块。
2、根据权利要求 1所述的 LED小功率发光芯片的封装模块，其特征在于， 所述沉孔的开口直径不小于 LED发光芯片， 使 LED发光芯片完全由其内的高 导热银胶支撑。
3、根据权利要求 1所述的 LED小功率发光芯片的封装模块，其特征在于， 所述铝基板安置 LED发光芯片的表面上除固定芯片的位置以外， 全部涂敷反 光白漆。
4、根据权利要求 3所述的 LED小功率发光芯片的封装模块，其特征在于， 所述反光白漆为反光率大于 85 %、 白度大于 90的聚脂白漆。
5、根据权利要求 1所述的 LED小功率发光芯片的封装模块，其特征在于， 所述透明硅胶层包括混光透明硅胶层以及荧光粉硅胶层，该混光透明硅胶层为 透明度大于 99%的高透明硅胶层， 其覆盖 LED发光芯片， 能够使 LED发光芯 片侧面发出的光在该硅胶层中形成折射光，此折射光再通过铝基板上的反光白 漆层反射进荧光粉硅胶层。
6、根据权利要求 5所述的 LED小功率发光芯片的封装模块，其特征在于， 所述荧光粉硅胶层由荧光粉均匀分散在透明硅胶得到，其均匀设在混光透明硅 胶层上。
7、 根据权利要求 1所述的 LED小功率发光芯片的封装模块， 其特征在 于， 所述发光模块能够拼接成日光灯管、 吸顶灯、 圆形射灯等各式灯源。
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