CN1987570B - 金属线路及其形成方法、显示器基板及其制造方法 - Google Patents

金属线路及其形成方法、显示器基板及其制造方法 Download PDF

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Publication number
CN1987570B
CN1987570B CN200610064054XA CN200610064054A CN1987570B CN 1987570 B CN1987570 B CN 1987570B CN 200610064054X A CN200610064054X A CN 200610064054XA CN 200610064054 A CN200610064054 A CN 200610064054A CN 1987570 B CN1987570 B CN 1987570B
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CN
China
Prior art keywords
film
amorphous carbon
metal
carbon film
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200610064054XA
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English (en)
Chinese (zh)
Other versions
CN1987570A (zh
Inventor
姜镐民
闵勋基
沈承焕
洪性秀
朴鲜
许成权
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1987570A publication Critical patent/CN1987570A/zh
Application granted granted Critical
Publication of CN1987570B publication Critical patent/CN1987570B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200610064054XA 2005-12-19 2006-12-19 金属线路及其形成方法、显示器基板及其制造方法 Expired - Fee Related CN1987570B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR125219/05 2005-12-19
KR1020050125219A KR101235135B1 (ko) 2005-12-19 2005-12-19 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법

Publications (2)

Publication Number Publication Date
CN1987570A CN1987570A (zh) 2007-06-27
CN1987570B true CN1987570B (zh) 2011-09-21

Family

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Family Applications (1)

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CN200610064054XA Expired - Fee Related CN1987570B (zh) 2005-12-19 2006-12-19 金属线路及其形成方法、显示器基板及其制造方法

Country Status (4)

Country Link
US (1) US7687805B2 (enExample)
JP (1) JP5254544B2 (enExample)
KR (1) KR101235135B1 (enExample)
CN (1) CN1987570B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2441961T3 (es) * 2007-02-15 2014-02-07 Allergan, Inc. Composiciones de toxina botulínica y métodos
WO2010001998A1 (ja) * 2008-07-03 2010-01-07 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
TWI491048B (zh) 2008-07-31 2015-07-01 半導體能源研究所股份有限公司 半導體裝置
WO2014208442A1 (ja) * 2013-06-26 2014-12-31 シャープ株式会社 薄膜トランジスタ
US9589955B2 (en) * 2014-10-01 2017-03-07 Samsung Electronics Co., Ltd. System on chip
CN105977164A (zh) * 2016-06-28 2016-09-28 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示面板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840455A (en) * 1995-05-24 1998-11-24 Ricoh Company, Ltd. Electrophotographic photoconductor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2997371B2 (ja) * 1992-10-27 2000-01-11 川崎製鉄株式会社 集積回路装置
JP3208658B2 (ja) * 1997-03-27 2001-09-17 株式会社アドバンスト・ディスプレイ 電気光学素子の製法
TW469484B (en) * 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
JP2002093778A (ja) * 2000-09-11 2002-03-29 Toshiba Corp 有機膜のエッチング方法およびこれを用いた半導体装置の製造方法
US7314784B2 (en) * 2003-03-19 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP4417027B2 (ja) * 2003-05-21 2010-02-17 株式会社半導体エネルギー研究所 発光装置
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
KR100984359B1 (ko) * 2003-11-20 2010-09-30 삼성전자주식회사 박막 트랜지스터 표시판

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840455A (en) * 1995-05-24 1998-11-24 Ricoh Company, Ltd. Electrophotographic photoconductor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
同上.

Also Published As

Publication number Publication date
US7687805B2 (en) 2010-03-30
KR101235135B1 (ko) 2013-02-20
US20070148456A1 (en) 2007-06-28
CN1987570A (zh) 2007-06-27
KR20070064765A (ko) 2007-06-22
JP2007173816A (ja) 2007-07-05
JP5254544B2 (ja) 2013-08-07

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C06 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG MONITOR CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121030

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121030

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110921

Termination date: 20151219

EXPY Termination of patent right or utility model