CN1987570B - 金属线路及其形成方法、显示器基板及其制造方法 - Google Patents

金属线路及其形成方法、显示器基板及其制造方法 Download PDF

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Publication number
CN1987570B
CN1987570B CN200610064054XA CN200610064054A CN1987570B CN 1987570 B CN1987570 B CN 1987570B CN 200610064054X A CN200610064054X A CN 200610064054XA CN 200610064054 A CN200610064054 A CN 200610064054A CN 1987570 B CN1987570 B CN 1987570B
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China
Prior art keywords
film
amorphous carbon
metal
carbon film
low
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Expired - Fee Related
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CN200610064054XA
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English (en)
Chinese (zh)
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CN1987570A (zh
Inventor
姜镐民
闵勋基
沈承焕
洪性秀
朴鲜
许成权
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1987570A publication Critical patent/CN1987570A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN200610064054XA 2005-12-19 2006-12-19 金属线路及其形成方法、显示器基板及其制造方法 Expired - Fee Related CN1987570B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR125219/05 2005-12-19
KR1020050125219A KR101235135B1 (ko) 2005-12-19 2005-12-19 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법

Publications (2)

Publication Number Publication Date
CN1987570A CN1987570A (zh) 2007-06-27
CN1987570B true CN1987570B (zh) 2011-09-21

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Country Link
US (1) US7687805B2 (enExample)
JP (1) JP5254544B2 (enExample)
KR (1) KR101235135B1 (enExample)
CN (1) CN1987570B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010519211A (ja) * 2007-02-15 2010-06-03 アラーガン、インコーポレイテッド 膀胱もしくは前立腺障害または多汗症を処置するためのボツリヌス毒素および酵素の使用
US8535997B2 (en) * 2008-07-03 2013-09-17 Kobe Steel, Ltd. Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US20160141531A1 (en) * 2013-06-26 2016-05-19 Sharp Kabushiki Kaisha Thin film transistor
US9589955B2 (en) * 2014-10-01 2017-03-07 Samsung Electronics Co., Ltd. System on chip
CN105977164A (zh) * 2016-06-28 2016-09-28 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示面板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840455A (en) * 1995-05-24 1998-11-24 Ricoh Company, Ltd. Electrophotographic photoconductor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2997371B2 (ja) * 1992-10-27 2000-01-11 川崎製鉄株式会社 集積回路装置
JP3208658B2 (ja) * 1997-03-27 2001-09-17 株式会社アドバンスト・ディスプレイ 電気光学素子の製法
EP1041641B1 (en) * 1999-03-26 2015-11-04 Semiconductor Energy Laboratory Co., Ltd. A method for manufacturing an electrooptical device
JP2002093778A (ja) * 2000-09-11 2002-03-29 Toshiba Corp 有機膜のエッチング方法およびこれを用いた半導体装置の製造方法
US7314784B2 (en) * 2003-03-19 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP4417027B2 (ja) * 2003-05-21 2010-02-17 株式会社半導体エネルギー研究所 発光装置
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
KR100984359B1 (ko) * 2003-11-20 2010-09-30 삼성전자주식회사 박막 트랜지스터 표시판

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840455A (en) * 1995-05-24 1998-11-24 Ricoh Company, Ltd. Electrophotographic photoconductor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
同上.

Also Published As

Publication number Publication date
US7687805B2 (en) 2010-03-30
KR101235135B1 (ko) 2013-02-20
KR20070064765A (ko) 2007-06-22
JP5254544B2 (ja) 2013-08-07
JP2007173816A (ja) 2007-07-05
US20070148456A1 (en) 2007-06-28
CN1987570A (zh) 2007-06-27

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Owner name: SAMSUNG MONITOR CO., LTD.

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Effective date: 20121030

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Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

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Granted publication date: 20110921

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