KR101235135B1 - 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법 - Google Patents

금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법 Download PDF

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Publication number
KR101235135B1
KR101235135B1 KR1020050125219A KR20050125219A KR101235135B1 KR 101235135 B1 KR101235135 B1 KR 101235135B1 KR 1020050125219 A KR1020050125219 A KR 1020050125219A KR 20050125219 A KR20050125219 A KR 20050125219A KR 101235135 B1 KR101235135 B1 KR 101235135B1
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South Korea
Prior art keywords
metal layer
amorphous carbon
carbon film
layer
pattern
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Expired - Fee Related
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KR1020050125219A
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English (en)
Korean (ko)
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KR20070064765A (ko
Inventor
심승환
강호민
민훈기
홍성수
박선
허성권
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삼성디스플레이 주식회사
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Priority to KR1020050125219A priority Critical patent/KR101235135B1/ko
Priority to US11/609,145 priority patent/US7687805B2/en
Priority to JP2006339621A priority patent/JP5254544B2/ja
Priority to CN200610064054XA priority patent/CN1987570B/zh
Publication of KR20070064765A publication Critical patent/KR20070064765A/ko
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Publication of KR101235135B1 publication Critical patent/KR101235135B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0323—Carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020050125219A 2005-12-19 2005-12-19 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법 Expired - Fee Related KR101235135B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050125219A KR101235135B1 (ko) 2005-12-19 2005-12-19 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법
US11/609,145 US7687805B2 (en) 2005-12-19 2006-12-11 Metal wiring, method of forming the metal wiring, display substrate having the metal wiring and method of manufacturing the display substrate
JP2006339621A JP5254544B2 (ja) 2005-12-19 2006-12-18 金属配線の製造方法
CN200610064054XA CN1987570B (zh) 2005-12-19 2006-12-19 金属线路及其形成方法、显示器基板及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050125219A KR101235135B1 (ko) 2005-12-19 2005-12-19 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법

Publications (2)

Publication Number Publication Date
KR20070064765A KR20070064765A (ko) 2007-06-22
KR101235135B1 true KR101235135B1 (ko) 2013-02-20

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KR1020050125219A Expired - Fee Related KR101235135B1 (ko) 2005-12-19 2005-12-19 금속 배선, 이의 제조 방법, 이를 구비한 표시 기판 및표시 기판의 제조 방법

Country Status (4)

Country Link
US (1) US7687805B2 (enExample)
JP (1) JP5254544B2 (enExample)
KR (1) KR101235135B1 (enExample)
CN (1) CN1987570B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2678038C (en) * 2007-02-15 2016-10-11 Allergan, Inc. Use of botulinum toxin and enzymes for treating bladder or prostate disorders, or hyperhydrosis
US8535997B2 (en) * 2008-07-03 2013-09-17 Kobe Steel, Ltd. Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
TWI500159B (zh) * 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
WO2014208442A1 (ja) * 2013-06-26 2014-12-31 シャープ株式会社 薄膜トランジスタ
US9589955B2 (en) * 2014-10-01 2017-03-07 Samsung Electronics Co., Ltd. System on chip
CN105977164A (zh) * 2016-06-28 2016-09-28 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140401A (ja) * 1992-10-27 1994-05-20 Kawasaki Steel Corp 集積回路装置
US5840455A (en) * 1995-05-24 1998-11-24 Ricoh Company, Ltd. Electrophotographic photoconductor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3208658B2 (ja) * 1997-03-27 2001-09-17 株式会社アドバンスト・ディスプレイ 電気光学素子の製法
EP1041641B1 (en) * 1999-03-26 2015-11-04 Semiconductor Energy Laboratory Co., Ltd. A method for manufacturing an electrooptical device
JP2002093778A (ja) * 2000-09-11 2002-03-29 Toshiba Corp 有機膜のエッチング方法およびこれを用いた半導体装置の製造方法
US7314784B2 (en) * 2003-03-19 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP4417027B2 (ja) * 2003-05-21 2010-02-17 株式会社半導体エネルギー研究所 発光装置
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
KR100984359B1 (ko) * 2003-11-20 2010-09-30 삼성전자주식회사 박막 트랜지스터 표시판

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140401A (ja) * 1992-10-27 1994-05-20 Kawasaki Steel Corp 集積回路装置
US5840455A (en) * 1995-05-24 1998-11-24 Ricoh Company, Ltd. Electrophotographic photoconductor

Also Published As

Publication number Publication date
KR20070064765A (ko) 2007-06-22
JP5254544B2 (ja) 2013-08-07
CN1987570B (zh) 2011-09-21
CN1987570A (zh) 2007-06-27
US20070148456A1 (en) 2007-06-28
JP2007173816A (ja) 2007-07-05
US7687805B2 (en) 2010-03-30

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