CN1965404B - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

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Publication number
CN1965404B
CN1965404B CN2005800183321A CN200580018332A CN1965404B CN 1965404 B CN1965404 B CN 1965404B CN 2005800183321 A CN2005800183321 A CN 2005800183321A CN 200580018332 A CN200580018332 A CN 200580018332A CN 1965404 B CN1965404 B CN 1965404B
Authority
CN
China
Prior art keywords
memory cell
transistor
impurity diffusion
bit line
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2005800183321A
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English (en)
Chinese (zh)
Other versions
CN1965404A (zh
Inventor
森下玄
有本和民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Publication of CN1965404A publication Critical patent/CN1965404A/zh
Application granted granted Critical
Publication of CN1965404B publication Critical patent/CN1965404B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
CN2005800183321A 2004-06-09 2005-06-03 半导体存储装置 Expired - Lifetime CN1965404B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004170920 2004-06-09
JP170920/2004 2004-06-09
PCT/JP2005/010242 WO2005122244A1 (ja) 2004-06-09 2005-06-03 半導体記憶装置

Publications (2)

Publication Number Publication Date
CN1965404A CN1965404A (zh) 2007-05-16
CN1965404B true CN1965404B (zh) 2010-05-26

Family

ID=35503374

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800183321A Expired - Lifetime CN1965404B (zh) 2004-06-09 2005-06-03 半导体存储装置

Country Status (6)

Country Link
US (2) US7910975B2 (show.php)
JP (1) JP5027503B2 (show.php)
KR (1) KR20110113215A (show.php)
CN (1) CN1965404B (show.php)
TW (1) TW200605302A (show.php)
WO (1) WO2005122244A1 (show.php)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4964225B2 (ja) * 2006-03-01 2012-06-27 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5068035B2 (ja) * 2006-05-11 2012-11-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5078338B2 (ja) * 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
WO2013123415A1 (en) * 2012-02-16 2013-08-22 Zeno Semiconductor, Inc. Memory cell comprising first and second transistors and methods of operating
JP5217042B2 (ja) * 2007-07-06 2013-06-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5420345B2 (ja) * 2009-08-14 2014-02-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011071173A (ja) 2009-09-24 2011-04-07 Elpida Memory Inc 半導体装置、半導体装置の製造方法および半導体装置の制御方法
JP6429011B2 (ja) * 2014-11-13 2018-11-28 パナソニックＩｐマネジメント株式会社 インモールド成型用転写フィルム及びその製造方法
US10347320B1 (en) * 2017-12-28 2019-07-09 Micron Technology, Inc. Controlling discharge of a control gate voltage
JP2019169525A (ja) 2018-03-22 2019-10-03 東芝メモリ株式会社 半導体記憶装置
JP2021044519A (ja) * 2019-09-13 2021-03-18 キオクシア株式会社 半導体装置
JP2022136400A (ja) * 2021-03-08 2022-09-21 キオクシア株式会社 半導体装置
WO2022269740A1 (ja) * 2021-06-22 2022-12-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2023170755A1 (ja) * 2022-03-07 2023-09-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2025062621A1 (ja) * 2023-09-22 2025-03-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1218294A (zh) * 1997-10-09 1999-06-02 美商常忆科技股份有限公司 非易失p沟道金属氧化物半导体二晶体管存储单元和阵列
CN1371132A (zh) * 2001-02-13 2002-09-25 三菱电机株式会社 半导体装置及其制造方法
CN1490820A (zh) * 2002-09-11 2004-04-21 ��ʽ���綫֥ 半导体存储器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
JP3353875B2 (ja) * 1997-01-20 2002-12-03 シャープ株式会社 Ｓｏｉ・ｍｏｓ電界効果トランジスタ
JP3884266B2 (ja) 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
JP2002260381A (ja) 2001-02-28 2002-09-13 Toshiba Corp 半導体メモリ装置
JP3808763B2 (ja) * 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
US6687154B2 (en) * 2002-02-25 2004-02-03 Aplus Flash Technology, Inc. Highly-integrated flash memory and mask ROM array architecture
US7098499B2 (en) * 2004-08-16 2006-08-29 Chih-Hsin Wang Electrically alterable non-volatile memory cell
US7700993B2 (en) * 2007-11-05 2010-04-20 International Business Machines Corporation CMOS EPROM and EEPROM devices and programmable CMOS inverters

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1218294A (zh) * 1997-10-09 1999-06-02 美商常忆科技股份有限公司 非易失p沟道金属氧化物半导体二晶体管存储单元和阵列
CN1371132A (zh) * 2001-02-13 2002-09-25 三菱电机株式会社 半导体装置及其制造方法
CN1490820A (zh) * 2002-09-11 2004-04-21 ��ʽ���綫֥ 半导体存储器件

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2003-86712A 2003.03.20
JP特开平10-209456A 1998.08.07

Also Published As

Publication number Publication date
US20080251860A1 (en) 2008-10-16
JPWO2005122244A1 (ja) 2008-04-10
CN1965404A (zh) 2007-05-16
US8188534B2 (en) 2012-05-29
WO2005122244A1 (ja) 2005-12-22
TW200605302A (en) 2006-02-01
JP5027503B2 (ja) 2012-09-19
US20110127609A1 (en) 2011-06-02
TWI366898B (show.php) 2012-06-21
US7910975B2 (en) 2011-03-22
KR20110113215A (ko) 2011-10-14

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: RENESAS ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP.

Effective date: 20100925

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20100925

Address after: Kawasaki, Kanagawa, Japan

Patentee after: Renesas Electronics Corp.

Address before: Tokyo, Japan

Patentee before: Renesas Technology Corp.

CP02 Change in the address of a patent holder

Address after: Tokyo, Japan

Patentee after: Renesas Electronics Corp.

Address before: Kawasaki, Kanagawa, Japan

Patentee before: Renesas Electronics Corp.

CP02 Change in the address of a patent holder
CX01 Expiry of patent term

Granted publication date: 20100526

CX01 Expiry of patent term