CN1938415A - 使用超临界流体基组合物促进含硅粒子物质的去除 - Google Patents

使用超临界流体基组合物促进含硅粒子物质的去除 Download PDF

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Publication number
CN1938415A
CN1938415A CNA2005800103219A CN200580010321A CN1938415A CN 1938415 A CN1938415 A CN 1938415A CN A2005800103219 A CNA2005800103219 A CN A2005800103219A CN 200580010321 A CN200580010321 A CN 200580010321A CN 1938415 A CN1938415 A CN 1938415A
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CN
China
Prior art keywords
composition
silicon
scf
containing particulate
particulate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800103219A
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English (en)
Chinese (zh)
Inventor
迈克尔·B·科岑斯基
托马斯·H·鲍姆
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Advanced Technology Materials Inc
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Advanced Technology Materials Inc
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Filing date
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Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of CN1938415A publication Critical patent/CN1938415A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3749—Polyolefins; Halogenated polyolefins; Natural or synthetic rubber; Polyarylolefins or halogenated polyarylolefins
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
CNA2005800103219A 2004-03-01 2005-02-25 使用超临界流体基组合物促进含硅粒子物质的去除 Pending CN1938415A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,535 US7553803B2 (en) 2004-03-01 2004-03-01 Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US10/790,535 2004-03-01

Publications (1)

Publication Number Publication Date
CN1938415A true CN1938415A (zh) 2007-03-28

Family

ID=34887504

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800103219A Pending CN1938415A (zh) 2004-03-01 2005-02-25 使用超临界流体基组合物促进含硅粒子物质的去除

Country Status (7)

Country Link
US (1) US7553803B2 (enExample)
EP (1) EP1735425A2 (enExample)
JP (1) JP2007526653A (enExample)
KR (1) KR20070006800A (enExample)
CN (1) CN1938415A (enExample)
TW (1) TW200532759A (enExample)
WO (1) WO2005084241A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101643648B (zh) * 2008-08-08 2013-01-23 第一毛织株式会社 用于蚀刻氧化硅层的组合物、使用其蚀刻半导体器件的方法及用于蚀刻半导体器件的组合物
US8685272B2 (en) 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法
CN113172036A (zh) * 2015-03-26 2021-07-27 生命技术公司 用于处理半导体传感器阵列装置的方法
CN114597119A (zh) * 2022-02-28 2022-06-07 西安交通大学 一种基于超临界流体的高质量氮化硅介质钝化层处理工艺

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US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US20050118832A1 (en) * 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US20090301996A1 (en) * 2005-11-08 2009-12-10 Advanced Technology Materials, Inc. Formulations for removing cooper-containing post-etch residue from microelectronic devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
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JP2009231632A (ja) * 2008-03-24 2009-10-08 Fujitsu Microelectronics Ltd 半導体装置の製造方法
US8277672B2 (en) * 2009-04-17 2012-10-02 Tiza Lab, LLC Enhanced focused ion beam etching of dielectrics and silicon
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
JP5548224B2 (ja) * 2012-03-16 2014-07-16 富士フイルム株式会社 半導体基板製品の製造方法及びエッチング液
US9171715B2 (en) * 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
JP2015013976A (ja) * 2013-07-04 2015-01-22 株式会社ケミコート シリコン溶解洗浄剤組成物及びその溶解洗浄剤を用いた洗浄方法
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
TWI662379B (zh) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
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CN106283089A (zh) * 2016-08-25 2017-01-04 仇颖超 一种固液两相机械金属清洗剂的制备方法
KR101966808B1 (ko) * 2016-09-30 2019-04-08 세메스 주식회사 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
CN108004534B (zh) * 2017-12-12 2020-10-20 安徽启东热能科技有限公司 一种提升气液分配盘盘体耐腐特性的处理方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101643648B (zh) * 2008-08-08 2013-01-23 第一毛织株式会社 用于蚀刻氧化硅层的组合物、使用其蚀刻半导体器件的方法及用于蚀刻半导体器件的组合物
US8685272B2 (en) 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
CN113172036A (zh) * 2015-03-26 2021-07-27 生命技术公司 用于处理半导体传感器阵列装置的方法
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法
CN114597119A (zh) * 2022-02-28 2022-06-07 西安交通大学 一种基于超临界流体的高质量氮化硅介质钝化层处理工艺

Also Published As

Publication number Publication date
TW200532759A (en) 2005-10-01
EP1735425A2 (en) 2006-12-27
US20050192193A1 (en) 2005-09-01
KR20070006800A (ko) 2007-01-11
WO2005084241A3 (en) 2006-03-23
US7553803B2 (en) 2009-06-30
JP2007526653A (ja) 2007-09-13
WO2005084241A2 (en) 2005-09-15

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