JP2007513522A5 - - Google Patents
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- JP2007513522A5 JP2007513522A5 JP2006542670A JP2006542670A JP2007513522A5 JP 2007513522 A5 JP2007513522 A5 JP 2007513522A5 JP 2006542670 A JP2006542670 A JP 2006542670A JP 2006542670 A JP2006542670 A JP 2006542670A JP 2007513522 A5 JP2007513522 A5 JP 2007513522A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- scf
- silicon
- group
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- 239000006184 cosolvent Substances 0.000 claims 12
- 239000004094 surface-active agent Substances 0.000 claims 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 9
- 239000000463 material Substances 0.000 claims 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 8
- -1 fluoride compound Chemical class 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 6
- 150000002009 diols Chemical class 0.000 claims 5
- 239000002736 nonionic surfactant Substances 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 4
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 4
- 239000001569 carbon dioxide Substances 0.000 claims 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 4
- 229920001451 polypropylene glycol Polymers 0.000 claims 4
- 229920005573 silicon-containing polymer Polymers 0.000 claims 4
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 3
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 3
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 2
- 239000004698 Polyethylene Substances 0.000 claims 2
- 239000002202 Polyethylene glycol Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000002378 acidificating effect Effects 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 239000003945 anionic surfactant Substances 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 claims 2
- 150000007942 carboxylates Chemical class 0.000 claims 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 2
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 claims 2
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 claims 2
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 claims 2
- 125000003709 fluoroalkyl group Chemical group 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 229920000058 polyacrylate Polymers 0.000 claims 2
- 229920000573 polyethylene Polymers 0.000 claims 2
- 229920001223 polyethylene glycol Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000003068 static effect Effects 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 208000036822 Small cell carcinoma of the ovary Diseases 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 238000004380 ashing Methods 0.000 claims 1
- 239000008367 deionised water Substances 0.000 claims 1
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 201000005292 ovarian small cell carcinoma Diseases 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/724,791 US20050118832A1 (en) | 2003-12-01 | 2003-12-01 | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
| US10/782,355 US7160815B2 (en) | 2003-12-01 | 2004-02-19 | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
| PCT/US2004/040015 WO2005054405A1 (en) | 2003-12-01 | 2004-11-30 | Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007513522A JP2007513522A (ja) | 2007-05-24 |
| JP2007513522A5 true JP2007513522A5 (enExample) | 2008-01-24 |
Family
ID=34657407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006542670A Pending JP2007513522A (ja) | 2003-12-01 | 2004-11-30 | 超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7517809B2 (enExample) |
| EP (1) | EP1689825A4 (enExample) |
| JP (1) | JP2007513522A (enExample) |
| KR (1) | KR20060121168A (enExample) |
| CA (1) | CA2589168A1 (enExample) |
| WO (1) | WO2005054405A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4464125B2 (ja) * | 2003-12-22 | 2010-05-19 | ソニー株式会社 | 構造体の作製方法及びシリコン酸化膜エッチング剤 |
| US20050227482A1 (en) * | 2004-03-24 | 2005-10-13 | Korzenski Michael B | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| KR101354520B1 (ko) * | 2004-07-29 | 2014-01-21 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법 |
| US8114220B2 (en) * | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| CA2608285A1 (en) * | 2005-05-13 | 2006-11-23 | Sachem, Inc. | Selective wet etching of oxides |
| CN101228091A (zh) | 2005-07-22 | 2008-07-23 | 高通股份有限公司 | 用于mems装置的支撑结构及其方法 |
| EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
| US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
| US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
| US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
| KR100768121B1 (ko) * | 2006-05-23 | 2007-10-18 | 경희대학교 산학협력단 | 초임계 추출용 계면활성제, 그 제조방법 및 상기계면활성제를 이용한 초임계추출방법 |
| US7763546B2 (en) * | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US7569488B2 (en) * | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
| JP5279301B2 (ja) * | 2008-03-05 | 2013-09-04 | ステラケミファ株式会社 | 微細加工処理剤、及び微細加工処理方法 |
| US7851239B2 (en) | 2008-06-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices |
| US7864403B2 (en) * | 2009-03-27 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Post-release adjustment of interferometric modulator reflectivity |
| SG176129A1 (en) | 2009-05-21 | 2011-12-29 | Stella Chemifa Corp | Fine-processing agent and fine-processing method |
| US8101561B2 (en) | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| US9663356B2 (en) | 2014-06-18 | 2017-05-30 | Nxp Usa, Inc. | Etch release residue removal using anhydrous solution |
| US20150368557A1 (en) * | 2014-06-23 | 2015-12-24 | Hyosan Lee | Metal etchant compositions and methods of fabricating a semiconductor device using the same |
| KR102675057B1 (ko) * | 2019-10-29 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07109825B2 (ja) * | 1992-01-13 | 1995-11-22 | 富士通株式会社 | 半導体基板表面もしくは薄膜表面のドライ洗浄法 |
| US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
| US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US5789505A (en) | 1997-08-14 | 1998-08-04 | Air Products And Chemicals, Inc. | Surfactants for use in liquid/supercritical CO2 |
| US7099065B2 (en) * | 2000-08-03 | 2006-08-29 | Reflectivity, Inc. | Micromirrors with OFF-angle electrodes and stops |
| US20030073302A1 (en) | 2001-10-12 | 2003-04-17 | Reflectivity, Inc., A California Corporation | Methods for formation of air gap interconnects |
| US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
| JP2003224099A (ja) * | 2002-01-30 | 2003-08-08 | Sony Corp | 表面処理方法 |
| US6521466B1 (en) * | 2002-04-17 | 2003-02-18 | Paul Castrucci | Apparatus and method for semiconductor wafer test yield enhancement |
| US6669785B2 (en) | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
| US6943139B2 (en) | 2002-10-31 | 2005-09-13 | Advanced Technology Materials, Inc. | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
| US6989358B2 (en) | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
| US7485611B2 (en) | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
| US7119052B2 (en) | 2003-06-24 | 2006-10-10 | Advanced Technology Materials, Inc. | Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers |
| US20050118832A1 (en) * | 2003-12-01 | 2005-06-02 | Korzenski Michael B. | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
-
2004
- 2004-11-30 JP JP2006542670A patent/JP2007513522A/ja active Pending
- 2004-11-30 CA CA002589168A patent/CA2589168A1/en not_active Abandoned
- 2004-11-30 WO PCT/US2004/040015 patent/WO2005054405A1/en not_active Ceased
- 2004-11-30 EP EP04812516A patent/EP1689825A4/en not_active Withdrawn
- 2004-11-30 KR KR1020067011411A patent/KR20060121168A/ko not_active Withdrawn
-
2007
- 2007-01-08 US US11/620,902 patent/US7517809B2/en not_active Expired - Fee Related
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