JP2007531006A5 - - Google Patents
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- JP2007531006A5 JP2007531006A5 JP2007504990A JP2007504990A JP2007531006A5 JP 2007531006 A5 JP2007531006 A5 JP 2007531006A5 JP 2007504990 A JP2007504990 A JP 2007504990A JP 2007504990 A JP2007504990 A JP 2007504990A JP 2007531006 A5 JP2007531006 A5 JP 2007531006A5
- Authority
- JP
- Japan
- Prior art keywords
- barc
- scf
- surfactant
- group
- removal composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000000034 method Methods 0.000 claims 15
- -1 polyethylene Polymers 0.000 claims 13
- 239000004094 surface-active agent Substances 0.000 claims 11
- 239000006184 cosolvent Substances 0.000 claims 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims 4
- 229920002396 Polyurea Polymers 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 4
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 4
- 239000003945 anionic surfactant Substances 0.000 claims 4
- 150000002009 diols Chemical class 0.000 claims 4
- 239000002736 nonionic surfactant Substances 0.000 claims 4
- 229920000058 polyacrylate Polymers 0.000 claims 4
- 229920001451 polypropylene glycol Polymers 0.000 claims 4
- 229920005573 silicon-containing polymer Polymers 0.000 claims 4
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 3
- IKGLACJFEHSFNN-UHFFFAOYSA-N hydron;triethylazanium;trifluoride Chemical compound F.F.F.CCN(CC)CC IKGLACJFEHSFNN-UHFFFAOYSA-N 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 3
- JMVIVASFFKKFQK-UHFFFAOYSA-N 1-phenylpyrrolidin-2-one Chemical compound O=C1CCCN1C1=CC=CC=C1 JMVIVASFFKKFQK-UHFFFAOYSA-N 0.000 claims 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 claims 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 2
- WPPOGHDFAVQKLN-UHFFFAOYSA-N N-Octyl-2-pyrrolidone Chemical compound CCCCCCCCN1CCCC1=O WPPOGHDFAVQKLN-UHFFFAOYSA-N 0.000 claims 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 2
- 239000004698 Polyethylene Substances 0.000 claims 2
- 239000002202 Polyethylene glycol Substances 0.000 claims 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001569 carbon dioxide Substances 0.000 claims 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 2
- 150000007942 carboxylates Chemical class 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 2
- JMGZBMRVDHKMKB-UHFFFAOYSA-L disodium;2-sulfobutanedioate Chemical compound [Na+].[Na+].OS(=O)(=O)C(C([O-])=O)CC([O-])=O JMGZBMRVDHKMKB-UHFFFAOYSA-L 0.000 claims 2
- 150000002148 esters Chemical class 0.000 claims 2
- 125000003709 fluoroalkyl group Chemical group 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 229920002492 poly(sulfone) Polymers 0.000 claims 2
- 229920000573 polyethylene Polymers 0.000 claims 2
- 229920001223 polyethylene glycol Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229910052708 sodium Inorganic materials 0.000 claims 2
- 239000011734 sodium Substances 0.000 claims 2
- 230000003068 static effect Effects 0.000 claims 2
- 150000003457 sulfones Chemical class 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 239000013543 active substance Substances 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 150000008051 alkyl sulfates Chemical class 0.000 claims 1
- 150000003863 ammonium salts Chemical class 0.000 claims 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims 1
- 235000011130 ammonium sulphate Nutrition 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000008367 deionised water Substances 0.000 claims 1
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 150000002221 fluorine Chemical class 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/807,858 US20050227482A1 (en) | 2004-03-24 | 2004-03-24 | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| PCT/US2005/007947 WO2005104214A2 (en) | 2004-03-24 | 2005-03-14 | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007531006A JP2007531006A (ja) | 2007-11-01 |
| JP2007531006A5 true JP2007531006A5 (enExample) | 2008-05-01 |
Family
ID=35061117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007504990A Withdrawn JP2007531006A (ja) | 2004-03-24 | 2005-03-14 | パターン化されたイオン注入フォトレジストのウエハーから裏面反射防止膜を除去するのに有用な組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20050227482A1 (enExample) |
| EP (1) | EP1733001A4 (enExample) |
| JP (1) | JP2007531006A (enExample) |
| KR (1) | KR20060128037A (enExample) |
| CN (1) | CN1934221A (enExample) |
| TW (1) | TW200535964A (enExample) |
| WO (1) | WO2005104214A2 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
| US8114220B2 (en) * | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| US20090301996A1 (en) * | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
| TWI425324B (zh) * | 2005-12-23 | 2014-02-01 | Anji Microelectronics Co Ltd | 可去除光阻層之組合物 |
| KR100721207B1 (ko) * | 2006-05-18 | 2007-05-23 | 주식회사 하이닉스반도체 | 이온주입된 포토레지스트 제거방법 |
| JP5007089B2 (ja) * | 2006-09-08 | 2012-08-22 | 富士フイルム株式会社 | レジストの剥離方法 |
| US9196270B1 (en) | 2006-12-07 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetoresistive element having small critical dimensions |
| DE102006062035B4 (de) * | 2006-12-29 | 2013-02-07 | Advanced Micro Devices, Inc. | Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement |
| US20090029274A1 (en) * | 2007-07-25 | 2009-01-29 | 3M Innovative Properties Company | Method for removing contamination with fluorinated compositions |
| US8316527B2 (en) | 2008-04-01 | 2012-11-27 | Western Digital (Fremont), Llc | Method for providing at least one magnetoresistive device |
| KR100873370B1 (ko) * | 2008-04-02 | 2008-12-10 | 주식회사 이생테크 | 알루미늄 거푸집용 세척제 |
| US8349195B1 (en) | 2008-06-27 | 2013-01-08 | Western Digital (Fremont), Llc | Method and system for providing a magnetoresistive structure using undercut free mask |
| RU2011139105A (ru) | 2009-02-25 | 2013-04-10 | Авантор Перформанс Матириалз, Инк. | Композиции для удаления фоторезиста для очистки ионно-имплантированного фоторезиста с пластин полупроводниковых устройств |
| US8277672B2 (en) * | 2009-04-17 | 2012-10-02 | Tiza Lab, LLC | Enhanced focused ion beam etching of dielectrics and silicon |
| KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
| CN102080023B (zh) * | 2010-11-22 | 2015-03-25 | 青岛大学 | 一种蜡印织物用高效退蜡清洗液 |
| CN102157357B (zh) * | 2011-03-17 | 2016-04-06 | 上海集成电路研发中心有限公司 | 半导体硅片的清洗方法 |
| CN103668210A (zh) * | 2012-09-11 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | 选择性晶体硅刻蚀液、晶圆硅片的刻蚀方法及其应用 |
| WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| WO2014138064A1 (en) | 2013-03-04 | 2014-09-12 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| JP6723152B2 (ja) | 2013-06-06 | 2020-07-15 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物及び方法 |
| US10138117B2 (en) | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
| WO2015031620A1 (en) | 2013-08-30 | 2015-03-05 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| WO2015095175A1 (en) | 2013-12-16 | 2015-06-25 | Advanced Technology Materials, Inc. | Ni:nige:ge selective etch formulations and method of using same |
| TWI662379B (zh) | 2013-12-20 | 2019-06-11 | 美商恩特葛瑞斯股份有限公司 | 移除離子植入抗蝕劑之非氧化強酸類之用途 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| TWI659098B (zh) | 2014-01-29 | 2019-05-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| JP6378146B2 (ja) | 2014-10-16 | 2018-08-22 | 信越化学工業株式会社 | 多層膜形成方法及びパターン形成方法 |
| JP6763325B2 (ja) * | 2017-03-10 | 2020-09-30 | 東京エレクトロン株式会社 | 半導体装置の製造方法、基板処理装置及び真空処理装置 |
| JP6809315B2 (ja) * | 2017-03-15 | 2021-01-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び真空処理装置 |
| JP6977474B2 (ja) * | 2017-10-23 | 2021-12-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| CN112764329A (zh) * | 2019-10-21 | 2021-05-07 | 昆山晶科微电子材料有限公司 | 一种超临界co2光刻胶去除液及光刻胶的去除方法 |
| CN112680288A (zh) * | 2020-12-24 | 2021-04-20 | 昆山晶科微电子材料有限公司 | 一种用于清洁半导体芯片洗涤剂及其制备方法 |
| CN113549462A (zh) * | 2021-06-16 | 2021-10-26 | 江阴润玛电子材料股份有限公司 | 一种微电子用超纯氟化铵蚀刻液及其制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6669995B1 (en) * | 1994-10-12 | 2003-12-30 | Linda Insalaco | Method of treating an anti-reflective coating on a substrate |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US6627588B1 (en) * | 1999-03-11 | 2003-09-30 | Georgia Tech Research Corporation | Method of stripping photoresist using alcohols |
| US6306754B1 (en) * | 1999-06-29 | 2001-10-23 | Micron Technology, Inc. | Method for forming wiring with extremely low parasitic capacitance |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP4532039B2 (ja) * | 2001-09-28 | 2010-08-25 | シャープ株式会社 | レジスト剥離方法及び薄膜回路素子の形成方法 |
| US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
| US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
| US20030217764A1 (en) * | 2002-05-23 | 2003-11-27 | Kaoru Masuda | Process and composition for removing residues from the microstructure of an object |
| US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
| US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
| US6962714B2 (en) * | 2002-08-06 | 2005-11-08 | Ecolab, Inc. | Critical fluid antimicrobial compositions and their use and generation |
| US7119052B2 (en) * | 2003-06-24 | 2006-10-10 | Advanced Technology Materials, Inc. | Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers |
| CA2589168A1 (en) * | 2003-12-01 | 2005-06-16 | Advanced Technology Materials, Inc. | Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
| US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
-
2004
- 2004-03-24 US US10/807,858 patent/US20050227482A1/en not_active Abandoned
-
2005
- 2005-03-14 CN CNA2005800095180A patent/CN1934221A/zh active Pending
- 2005-03-14 KR KR1020067020257A patent/KR20060128037A/ko not_active Withdrawn
- 2005-03-14 JP JP2007504990A patent/JP2007531006A/ja not_active Withdrawn
- 2005-03-14 TW TW094107661A patent/TW200535964A/zh unknown
- 2005-03-14 WO PCT/US2005/007947 patent/WO2005104214A2/en not_active Ceased
- 2005-03-14 EP EP05727221A patent/EP1733001A4/en not_active Withdrawn
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