KR20060121168A - 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거 - Google Patents

초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거 Download PDF

Info

Publication number
KR20060121168A
KR20060121168A KR1020067011411A KR20067011411A KR20060121168A KR 20060121168 A KR20060121168 A KR 20060121168A KR 1020067011411 A KR1020067011411 A KR 1020067011411A KR 20067011411 A KR20067011411 A KR 20067011411A KR 20060121168 A KR20060121168 A KR 20060121168A
Authority
KR
South Korea
Prior art keywords
scf
composition
silicon
species
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067011411A
Other languages
English (en)
Korean (ko)
Inventor
마이클 비. 코르젠스키
토마스 에이치. 바움
엘리오도르 지. 젠시우
총잉 쉬
Original Assignee
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/724,791 external-priority patent/US20050118832A1/en
Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Publication of KR20060121168A publication Critical patent/KR20060121168A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
KR1020067011411A 2003-12-01 2004-11-30 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거 Withdrawn KR20060121168A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/724,791 US20050118832A1 (en) 2003-12-01 2003-12-01 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/724,791 2003-12-01
US10/782,355 US7160815B2 (en) 2003-12-01 2004-02-19 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 2004-02-19

Publications (1)

Publication Number Publication Date
KR20060121168A true KR20060121168A (ko) 2006-11-28

Family

ID=34657407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067011411A Withdrawn KR20060121168A (ko) 2003-12-01 2004-11-30 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거

Country Status (6)

Country Link
US (1) US7517809B2 (enExample)
EP (1) EP1689825A4 (enExample)
JP (1) JP2007513522A (enExample)
KR (1) KR20060121168A (enExample)
CA (1) CA2589168A1 (enExample)
WO (1) WO2005054405A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160000388A (ko) * 2014-06-23 2016-01-04 삼성전자주식회사 금속 에천트 조성물 및 이를 이용한 반도체 장치의 제조 방법

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
KR101255691B1 (ko) * 2004-07-29 2013-04-17 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US20080210900A1 (en) * 2005-05-13 2008-09-04 William Wojtczak Selective Wet Etchings Of Oxides
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
WO2007013992A1 (en) 2005-07-22 2007-02-01 Qualcomm Incorporated Support structure for mems device and methods therefor
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
KR100768121B1 (ko) * 2006-05-23 2007-10-18 경희대학교 산학협력단 초임계 추출용 계면활성제, 그 제조방법 및 상기계면활성제를 이용한 초임계추출방법
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
JP5279301B2 (ja) * 2008-03-05 2013-09-04 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) * 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
WO2010134184A1 (ja) 2009-05-21 2010-11-25 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9663356B2 (en) 2014-06-18 2017-05-30 Nxp Usa, Inc. Etch release residue removal using anhydrous solution
KR102675057B1 (ko) * 2019-10-29 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US5789505A (en) 1997-08-14 1998-08-04 Air Products And Chemicals, Inc. Surfactants for use in liquid/supercritical CO2
US7099065B2 (en) * 2000-08-03 2006-08-29 Reflectivity, Inc. Micromirrors with OFF-angle electrodes and stops
US20030073302A1 (en) 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
JP2003224099A (ja) * 2002-01-30 2003-08-08 Sony Corp 表面処理方法
US6521466B1 (en) * 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050118832A1 (en) * 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160000388A (ko) * 2014-06-23 2016-01-04 삼성전자주식회사 금속 에천트 조성물 및 이를 이용한 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
JP2007513522A (ja) 2007-05-24
WO2005054405A1 (en) 2005-06-16
EP1689825A1 (en) 2006-08-16
EP1689825A4 (en) 2008-09-24
US20070111533A1 (en) 2007-05-17
CA2589168A1 (en) 2005-06-16
US7517809B2 (en) 2009-04-14

Similar Documents

Publication Publication Date Title
US7160815B2 (en) Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US7517809B2 (en) Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US6492309B1 (en) Fluorinated solvent compositions containing hydrogen fluoride
US20070251551A1 (en) Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
US7553803B2 (en) Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US20110189858A1 (en) Method for reducing pattern collapse in high aspect ratio nanostructures
US6238580B1 (en) Method of HF vapor release of microstructures
KR20080023346A (ko) 경화된 포토레지스트, 에칭 후 잔류물 및/또는 바닥 반사방지 코팅 층의 제거를 위한 고밀도 유체 조성물
EP1636828A2 (en) Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
JP2006505010A (ja) フォトレジストを除去するための超臨界二酸化炭素／化学調合物
JP4977508B2 (ja) ダメージの入った多孔性誘電体の処理方法
KR20080050488A (ko) 농축 유체/화학 조성물을 이용하여 패턴화 실리콘/실리콘이산화물 상의 입자 오염물을 제거하는 방법
JP2007513522A5 (enExample)
KR20060135037A (ko) 이온―주입 포토레지스트 제거를 위한 비―플루오르화물함유 초임계 유체 조성물
Hattori Non-aqueous cleaning challenges for preventing damage to fragile nano-structures: A review
Saga et al. Wafer cleaning using supercritical CO2 in semiconductor and nanoelectronic device fabrication
JP2008538013A (ja) 溶媒系中の自己組織化単分子膜を用いた高線量イオン注入フォトレジストの除去
US20070129273A1 (en) In situ fluoride ion-generating compositions and uses thereof
HK1103756A (en) Removal of mems sacrificial layers using supercritical fluid/chemical formulations
JP2004088095A (ja) 洗浄方法
CN119452457A (zh) 用于多晶硅挖掘的配制碱化学品

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20060609

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid