KR20070006800A - 초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법 - Google Patents
초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법 Download PDFInfo
- Publication number
- KR20070006800A KR20070006800A KR1020067019819A KR20067019819A KR20070006800A KR 20070006800 A KR20070006800 A KR 20070006800A KR 1020067019819 A KR1020067019819 A KR 1020067019819A KR 20067019819 A KR20067019819 A KR 20067019819A KR 20070006800 A KR20070006800 A KR 20070006800A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- composition
- scf
- particulate material
- containing particulate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3749—Polyolefins; Halogenated polyolefins; Natural or synthetic rubber; Polyarylolefins or halogenated polyarylolefins
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/790,535 US7553803B2 (en) | 2004-03-01 | 2004-03-01 | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
| US10/790,535 | 2004-03-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20070006800A true KR20070006800A (ko) | 2007-01-11 |
Family
ID=34887504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067019819A Ceased KR20070006800A (ko) | 2004-03-01 | 2005-02-25 | 초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7553803B2 (enExample) |
| EP (1) | EP1735425A2 (enExample) |
| JP (1) | JP2007526653A (enExample) |
| KR (1) | KR20070006800A (enExample) |
| CN (1) | CN1938415A (enExample) |
| TW (1) | TW200532759A (enExample) |
| WO (1) | WO2005084241A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130105365A (ko) * | 2012-03-16 | 2013-09-25 | 후지필름 가부시키가이샤 | 반도체 기판 제품의 제조 방법 및 에칭액 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
| US20050118832A1 (en) * | 2003-12-01 | 2005-06-02 | Korzenski Michael B. | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
| US20050227482A1 (en) * | 2004-03-24 | 2005-10-13 | Korzenski Michael B | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| US8114220B2 (en) * | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| US20090301996A1 (en) * | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| US20090047870A1 (en) * | 2007-08-16 | 2009-02-19 | Dupont Air Products Nanomaterials Llc | Reverse Shallow Trench Isolation Process |
| JP2009231632A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
| US8685272B2 (en) * | 2008-08-08 | 2014-04-01 | Samsung Electronics Co., Ltd. | Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device |
| KR101316054B1 (ko) * | 2008-08-08 | 2013-10-10 | 삼성전자주식회사 | 실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법 |
| US8277672B2 (en) * | 2009-04-17 | 2012-10-02 | Tiza Lab, LLC | Enhanced focused ion beam etching of dielectrics and silicon |
| KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| US9171715B2 (en) * | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
| WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| WO2014138064A1 (en) | 2013-03-04 | 2014-09-12 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| JP6723152B2 (ja) | 2013-06-06 | 2020-07-15 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物及び方法 |
| JP2015013976A (ja) * | 2013-07-04 | 2015-01-22 | 株式会社ケミコート | シリコン溶解洗浄剤組成物及びその溶解洗浄剤を用いた洗浄方法 |
| US10138117B2 (en) | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
| WO2015031620A1 (en) | 2013-08-30 | 2015-03-05 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| WO2015095175A1 (en) | 2013-12-16 | 2015-06-25 | Advanced Technology Materials, Inc. | Ni:nige:ge selective etch formulations and method of using same |
| US9218963B2 (en) | 2013-12-19 | 2015-12-22 | Asm Ip Holding B.V. | Cyclical deposition of germanium |
| TWI662379B (zh) | 2013-12-20 | 2019-06-11 | 美商恩特葛瑞斯股份有限公司 | 移除離子植入抗蝕劑之非氧化強酸類之用途 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| TWI659098B (zh) | 2014-01-29 | 2019-05-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| EP3274699B1 (en) * | 2015-03-26 | 2023-12-20 | Life Technologies Corporation | Method for treating fet sensor arrays and resulting sensor devices |
| US9280998B1 (en) | 2015-03-30 | 2016-03-08 | WD Media, LLC | Acidic post-sputter wash for magnetic recording media |
| CN106283089A (zh) * | 2016-08-25 | 2017-01-04 | 仇颖超 | 一种固液两相机械金属清洗剂的制备方法 |
| KR101966808B1 (ko) * | 2016-09-30 | 2019-04-08 | 세메스 주식회사 | 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치 |
| CN108004534B (zh) * | 2017-12-12 | 2020-10-20 | 安徽启东热能科技有限公司 | 一种提升气液分配盘盘体耐腐特性的处理方法 |
| CN112764329A (zh) * | 2019-10-21 | 2021-05-07 | 昆山晶科微电子材料有限公司 | 一种超临界co2光刻胶去除液及光刻胶的去除方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068040A (en) * | 1989-04-03 | 1991-11-26 | Hughes Aircraft Company | Dense phase gas photochemical process for substrate treatment |
| US5925611A (en) * | 1995-01-20 | 1999-07-20 | Minnesota Mining And Manufacturing Company | Cleaning process and composition |
| US5676705A (en) * | 1995-03-06 | 1997-10-14 | Lever Brothers Company, Division Of Conopco, Inc. | Method of dry cleaning fabrics using densified carbon dioxide |
| US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
| US5709910A (en) * | 1995-11-06 | 1998-01-20 | Lockheed Idaho Technologies Company | Method and apparatus for the application of textile treatment compositions to textile materials |
| US5868862A (en) * | 1996-08-01 | 1999-02-09 | Texas Instruments Incorporated | Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media |
| US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US7044143B2 (en) * | 1999-05-14 | 2006-05-16 | Micell Technologies, Inc. | Detergent injection systems and methods for carbon dioxide microelectronic substrate processing systems |
| US6309425B1 (en) * | 1999-10-12 | 2001-10-30 | Unilever Home & Personal Care, Usa, Division Of Conopco, Inc. | Cleaning composition and method for using the same |
| JP2002043256A (ja) * | 2000-07-27 | 2002-02-08 | Hitachi Ltd | 半導体ウエハ平坦化加工方法及び平坦化加工装置 |
| US6623355B2 (en) * | 2000-11-07 | 2003-09-23 | Micell Technologies, Inc. | Methods, apparatus and slurries for chemical mechanical planarization |
| US6958123B2 (en) * | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
| US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
| US7018481B2 (en) * | 2002-01-28 | 2006-03-28 | Kabushiki Kaisha Toshiba | Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle |
| US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
| US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
| US6800142B1 (en) * | 2002-05-30 | 2004-10-05 | Novellus Systems, Inc. | Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment |
| US6989358B2 (en) * | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
| US7485611B2 (en) * | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
| US6943139B2 (en) * | 2002-10-31 | 2005-09-13 | Advanced Technology Materials, Inc. | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
| US7223352B2 (en) * | 2002-10-31 | 2007-05-29 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
| US6624127B1 (en) * | 2002-11-15 | 2003-09-23 | Intel Corporation | Highly polar cleans for removal of residues from semiconductor structures |
| US6735978B1 (en) * | 2003-02-11 | 2004-05-18 | Advanced Technology Materials, Inc. | Treatment of supercritical fluid utilized in semiconductor manufacturing applications |
| US8017568B2 (en) * | 2003-02-28 | 2011-09-13 | Intel Corporation | Cleaning residues from semiconductor structures |
| US7119052B2 (en) * | 2003-06-24 | 2006-10-10 | Advanced Technology Materials, Inc. | Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers |
-
2004
- 2004-03-01 US US10/790,535 patent/US7553803B2/en not_active Expired - Fee Related
-
2005
- 2005-02-23 TW TW094105334A patent/TW200532759A/zh unknown
- 2005-02-25 CN CNA2005800103219A patent/CN1938415A/zh active Pending
- 2005-02-25 KR KR1020067019819A patent/KR20070006800A/ko not_active Ceased
- 2005-02-25 EP EP05723901A patent/EP1735425A2/en not_active Withdrawn
- 2005-02-25 JP JP2007501865A patent/JP2007526653A/ja not_active Withdrawn
- 2005-02-25 WO PCT/US2005/006228 patent/WO2005084241A2/en not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130105365A (ko) * | 2012-03-16 | 2013-09-25 | 후지필름 가부시키가이샤 | 반도체 기판 제품의 제조 방법 및 에칭액 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200532759A (en) | 2005-10-01 |
| CN1938415A (zh) | 2007-03-28 |
| EP1735425A2 (en) | 2006-12-27 |
| US20050192193A1 (en) | 2005-09-01 |
| WO2005084241A3 (en) | 2006-03-23 |
| US7553803B2 (en) | 2009-06-30 |
| JP2007526653A (ja) | 2007-09-13 |
| WO2005084241A2 (en) | 2005-09-15 |
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Legal Events
| Date | Code | Title | Description |
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| PA0105 | International application |
Patent event date: 20060925 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20100225 Comment text: Request for Examination of Application |
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| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20120116 Patent event code: PE09021S01D |
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| PE0601 | Decision on rejection of patent |
Patent event date: 20121029 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20120116 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |