CN1917143A - 衬底处理设备和衬底处理方法 - Google Patents
衬底处理设备和衬底处理方法 Download PDFInfo
- Publication number
- CN1917143A CN1917143A CNA2006101110729A CN200610111072A CN1917143A CN 1917143 A CN1917143 A CN 1917143A CN A2006101110729 A CNA2006101110729 A CN A2006101110729A CN 200610111072 A CN200610111072 A CN 200610111072A CN 1917143 A CN1917143 A CN 1917143A
- Authority
- CN
- China
- Prior art keywords
- substrate
- processing
- process chamber
- chamber
- treating apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 238000012545 processing Methods 0.000 title claims abstract description 46
- 238000003672 processing method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 136
- 230000008569 process Effects 0.000 claims abstract description 127
- 239000000126 substance Substances 0.000 claims abstract description 111
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 239000008367 deionised water Substances 0.000 claims description 28
- 229910021641 deionized water Inorganic materials 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 13
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 9
- 230000032258 transport Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 99
- 239000007789 gas Substances 0.000 description 40
- 238000004140 cleaning Methods 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 10
- 238000012993 chemical processing Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000010129 solution processing Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000007634 remodeling Methods 0.000 description 2
- OQSOTSIYXPYTRE-YDOWWZDFSA-N (+)-sesamin dicatechol Chemical compound C1=C(O)C(O)=CC=C1[C@@H]1[C@@H](CO[C@@H]2C=3C=C(O)C(O)=CC=3)[C@@H]2CO1 OQSOTSIYXPYTRE-YDOWWZDFSA-N 0.000 description 1
- CGEORJKFOZSMEZ-MBZVMHRFSA-N (+)-sesamin monocatechol Chemical compound C1=C(O)C(O)=CC=C1[C@@H]1[C@@H](CO[C@@H]2C=3C=C4OCOC4=CC=3)[C@@H]2CO1 CGEORJKFOZSMEZ-MBZVMHRFSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-238259 | 2005-08-19 | ||
JP2005238259A JP4535967B2 (ja) | 2005-08-19 | 2005-08-19 | 基板処理装置 |
JP2005238259 | 2005-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1917143A true CN1917143A (zh) | 2007-02-21 |
CN100426457C CN100426457C (zh) | 2008-10-15 |
Family
ID=37738096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101110729A Expired - Fee Related CN100426457C (zh) | 2005-08-19 | 2006-08-18 | 衬底处理设备和衬底处理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7541285B2 (zh) |
JP (1) | JP4535967B2 (zh) |
CN (1) | CN100426457C (zh) |
TW (1) | TWI309063B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109712907A (zh) * | 2017-10-26 | 2019-05-03 | 北京北方华创微电子装备有限公司 | 腔室压力稳定控制系统及方法、半导体加工设备 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006322783A (ja) * | 2005-05-18 | 2006-11-30 | Dainippon Screen Mfg Co Ltd | 圧力センサおよび基板処理装置 |
TWI406330B (zh) * | 2007-09-26 | 2013-08-21 | Dainippon Screen Mfg | 基板處理裝置及基板處理方法 |
JP6017999B2 (ja) * | 2013-03-15 | 2016-11-02 | 株式会社Screenホールディングス | 基板処理装置 |
US9064760B2 (en) * | 2013-05-20 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Substrate processing based on resistivity measurements |
JP6326365B2 (ja) * | 2014-12-24 | 2018-05-16 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6294256B2 (ja) * | 2015-03-26 | 2018-03-14 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2021034561A (ja) | 2019-08-23 | 2021-03-01 | キオクシア株式会社 | 半導体製造装置 |
JP7433135B2 (ja) | 2020-05-25 | 2024-02-19 | 東京エレクトロン株式会社 | 貯留装置および貯留方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2927806B2 (ja) | 1988-11-30 | 1999-07-28 | 山形日本電気株式会社 | 半導体装置の製造装置 |
JP3193327B2 (ja) * | 1996-09-27 | 2001-07-30 | 東京エレクトロン株式会社 | 洗浄装置 |
US6164297A (en) * | 1997-06-13 | 2000-12-26 | Tokyo Electron Limited | Cleaning and drying apparatus for objects to be processed |
JP3156074B2 (ja) | 1997-06-13 | 2001-04-16 | 東京エレクトロン株式会社 | 洗浄・乾燥処理装置 |
JP3151613B2 (ja) | 1997-06-17 | 2001-04-03 | 東京エレクトロン株式会社 | 洗浄・乾燥処理方法及びその装置 |
US5807439A (en) * | 1997-09-29 | 1998-09-15 | Siemens Aktiengesellschaft | Apparatus and method for improved washing and drying of semiconductor wafers |
EP1068936A1 (en) | 1999-07-10 | 2001-01-17 | Applied Materials, Inc. | Grippers with ability to change wafer orientation |
US6318384B1 (en) * | 1999-09-24 | 2001-11-20 | Applied Materials, Inc. | Self cleaning method of forming deep trenches in silicon substrates |
JP3621613B2 (ja) | 1999-09-30 | 2005-02-16 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2002066475A (ja) * | 2000-08-25 | 2002-03-05 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
JP2003100703A (ja) * | 2001-09-26 | 2003-04-04 | Seiko Epson Corp | 液体処理方法、液体処理装置、及び、フラットパネル表示装置の製造方法 |
JP2004063513A (ja) | 2002-07-25 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 半導体基板の洗浄乾燥方法 |
KR100568104B1 (ko) * | 2003-08-26 | 2006-04-05 | 삼성전자주식회사 | 반도체 기판 세정 장치 및 세정 방법 |
JP4053975B2 (ja) * | 2003-12-08 | 2008-02-27 | 東京エレクトロン株式会社 | 基板処理方法 |
-
2005
- 2005-08-19 JP JP2005238259A patent/JP4535967B2/ja not_active Expired - Fee Related
-
2006
- 2006-08-04 TW TW095128573A patent/TWI309063B/zh not_active IP Right Cessation
- 2006-08-15 US US11/464,622 patent/US7541285B2/en active Active
- 2006-08-18 CN CNB2006101110729A patent/CN100426457C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109712907A (zh) * | 2017-10-26 | 2019-05-03 | 北京北方华创微电子装备有限公司 | 腔室压力稳定控制系统及方法、半导体加工设备 |
CN109712907B (zh) * | 2017-10-26 | 2021-05-07 | 北京北方华创微电子装备有限公司 | 腔室压力稳定控制系统及方法、半导体加工设备 |
Also Published As
Publication number | Publication date |
---|---|
TW200710982A (en) | 2007-03-16 |
JP2007053282A (ja) | 2007-03-01 |
CN100426457C (zh) | 2008-10-15 |
TWI309063B (en) | 2009-04-21 |
JP4535967B2 (ja) | 2010-09-01 |
US20070042511A1 (en) | 2007-02-22 |
US7541285B2 (en) | 2009-06-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: SCREEN GROUP CO., LTD. Free format text: FORMER NAME: DAINIPPON SCREEN MFG. CO., LTD. Owner name: DAINIPPON SCREEN MFG. CO., LTD. Free format text: FORMER NAME: DAINIPPON MESH PLATE MFR. CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kyoto City, Kyoto, Japan Patentee after: Skilling Group Address before: Kyoto City, Kyoto, Japan Patentee before: DAINIPPON SCREEN MFG Co.,Ltd. Address after: Kyoto City, Kyoto, Japan Patentee after: DAINIPPON SCREEN MFG Co.,Ltd. Address before: Kyoto City, Kyoto, Japan Patentee before: Dainippon Screen Mfg. Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081015 Termination date: 20210818 |