CN1909193B - 等离子蚀刻设备 - Google Patents

等离子蚀刻设备 Download PDF

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Publication number
CN1909193B
CN1909193B CN2006100995903A CN200610099590A CN1909193B CN 1909193 B CN1909193 B CN 1909193B CN 2006100995903 A CN2006100995903 A CN 2006100995903A CN 200610099590 A CN200610099590 A CN 200610099590A CN 1909193 B CN1909193 B CN 1909193B
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China
Prior art keywords
substrate
electrode
plasma etching
etching apparatus
plasma
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CN2006100995903A
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Chinese (zh)
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CN1909193A (zh
Inventor
全富一
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Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
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Publication of CN1909193A publication Critical patent/CN1909193A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2006100995903A 2005-08-04 2006-08-01 等离子蚀刻设备 Active CN1909193B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2005-0071385 2005-08-04
KR1020050071385 2005-08-04
KR1020050071385A KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치

Publications (2)

Publication Number Publication Date
CN1909193A CN1909193A (zh) 2007-02-07
CN1909193B true CN1909193B (zh) 2010-05-12

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Family Applications (1)

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CN2006100995903A Active CN1909193B (zh) 2005-08-04 2006-08-01 等离子蚀刻设备

Country Status (6)

Country Link
US (1) US7951261B2 (enExample)
EP (1) EP1750294A1 (enExample)
JP (1) JP5179730B2 (enExample)
KR (1) KR101218114B1 (enExample)
CN (1) CN1909193B (enExample)
TW (1) TWI407501B (enExample)

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US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
WO2009107718A1 (ja) 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
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US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
CN101783281B (zh) * 2009-01-15 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置及栅极的刻蚀方法
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
CN103889138B (zh) * 2012-12-24 2016-06-29 中国科学院微电子研究所 等离子体放电装置
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TWM503056U (zh) * 2014-07-24 2015-06-11 Wen-Hsin Chiang 用於電漿反應裝置之襯套單元
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
DE102015209503B4 (de) * 2015-05-22 2016-12-08 Daniel Daferner Reaktor und Verfahren zur Behandlung eines Substrats
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10113229B2 (en) * 2015-12-21 2018-10-30 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling ion/neutral ratio of a plasma source
US9738977B1 (en) 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
CN107689326A (zh) * 2016-08-05 2018-02-13 上海新昇半导体科技有限公司 一种晶圆减薄方法及装置
WO2018119959A1 (zh) * 2016-12-29 2018-07-05 深圳市柔宇科技有限公司 干蚀刻设备
US10903066B2 (en) 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber
US10276364B2 (en) 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control
KR102398614B1 (ko) * 2018-11-14 2022-05-17 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 장치의 세정 방법
CN114402416A (zh) 2019-07-17 2022-04-26 朗姆研究公司 用于衬底处理的氧化分布调节
CN117344291A (zh) * 2023-11-23 2024-01-05 拓荆科技(上海)有限公司 薄膜沉积设备和方法

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KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
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Also Published As

Publication number Publication date
CN1909193A (zh) 2007-02-07
JP2007043149A (ja) 2007-02-15
KR101218114B1 (ko) 2013-01-18
US7951261B2 (en) 2011-05-31
EP1750294A1 (en) 2007-02-07
KR101218114B9 (ko) 2025-01-10
KR20070016585A (ko) 2007-02-08
JP5179730B2 (ja) 2013-04-10
TWI407501B (zh) 2013-09-01
US20080173401A1 (en) 2008-07-24
TW200710989A (en) 2007-03-16

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