TWI407501B - 電漿蝕刻裝置 - Google Patents

電漿蝕刻裝置 Download PDF

Info

Publication number
TWI407501B
TWI407501B TW095128429A TW95128429A TWI407501B TW I407501 B TWI407501 B TW I407501B TW 095128429 A TW095128429 A TW 095128429A TW 95128429 A TW95128429 A TW 95128429A TW I407501 B TWI407501 B TW I407501B
Authority
TW
Taiwan
Prior art keywords
substrate
electrode
etching apparatus
plasma etching
plasma
Prior art date
Application number
TW095128429A
Other languages
English (en)
Chinese (zh)
Other versions
TW200710989A (en
Inventor
Bu-Il Jeon
Original Assignee
Jusung Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Eng Co Ltd filed Critical Jusung Eng Co Ltd
Publication of TW200710989A publication Critical patent/TW200710989A/zh
Application granted granted Critical
Publication of TWI407501B publication Critical patent/TWI407501B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW095128429A 2005-08-04 2006-08-03 電漿蝕刻裝置 TWI407501B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050071385A KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치

Publications (2)

Publication Number Publication Date
TW200710989A TW200710989A (en) 2007-03-16
TWI407501B true TWI407501B (zh) 2013-09-01

Family

ID=37309021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128429A TWI407501B (zh) 2005-08-04 2006-08-03 電漿蝕刻裝置

Country Status (6)

Country Link
US (1) US7951261B2 (enExample)
EP (1) EP1750294A1 (enExample)
JP (1) JP5179730B2 (enExample)
KR (1) KR101218114B1 (enExample)
CN (1) CN1909193B (enExample)
TW (1) TWI407501B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725034B (zh) * 2015-06-17 2021-04-21 日商東京威力科創股份有限公司 電漿處理方法

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2024533A1 (en) 2006-05-30 2009-02-18 Fuji Film Manufacturing Europe B.V. Method and apparatus for deposition using pulsed atmospheric pressure glow discharge
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100823302B1 (ko) * 2006-12-08 2008-04-17 주식회사 테스 플라즈마 처리 장치
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
KR100868019B1 (ko) * 2007-01-30 2008-11-10 삼성전자주식회사 플라즈마 쉬쓰 제어기를 갖는 이온 빔 장치
WO2008100139A1 (en) * 2007-02-13 2008-08-21 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8197636B2 (en) * 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
CN102543798A (zh) * 2007-07-12 2012-07-04 应用材料公司 处理基板边缘区域的装置与方法
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
KR101432562B1 (ko) * 2007-12-31 2014-08-21 (주)소슬 기판 처리 장치 및 기판 처리 방법
US8702999B2 (en) 2008-02-01 2014-04-22 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
CN101939466B (zh) * 2008-02-06 2012-07-18 友技科株式会社 等离子体cvd装置、等离子体cvd方法
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
WO2009107718A1 (ja) 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
US20090293907A1 (en) * 2008-05-28 2009-12-03 Nancy Fung Method of substrate polymer removal
KR20100004857A (ko) * 2008-07-03 2010-01-13 주성엔지니어링(주) 건식 에칭 장치
EP2180768A1 (en) * 2008-10-23 2010-04-28 TNO Nederlandse Organisatie voor Toegepast Wetenschappelijk Onderzoek Apparatus and method for treating an object
US8262923B2 (en) * 2008-12-17 2012-09-11 Lam Research Corporation High pressure bevel etch process
US8323523B2 (en) * 2008-12-17 2012-12-04 Lam Research Corporation High pressure bevel etch process
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
CN101783281B (zh) * 2009-01-15 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置及栅极的刻蚀方法
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
CN103889138B (zh) * 2012-12-24 2016-06-29 中国科学院微电子研究所 等离子体放电装置
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TWM503056U (zh) * 2014-07-24 2015-06-11 Wen-Hsin Chiang 用於電漿反應裝置之襯套單元
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
DE102015209503B4 (de) * 2015-05-22 2016-12-08 Daniel Daferner Reaktor und Verfahren zur Behandlung eines Substrats
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10113229B2 (en) * 2015-12-21 2018-10-30 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling ion/neutral ratio of a plasma source
US9738977B1 (en) 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
CN107689326A (zh) * 2016-08-05 2018-02-13 上海新昇半导体科技有限公司 一种晶圆减薄方法及装置
WO2018119959A1 (zh) * 2016-12-29 2018-07-05 深圳市柔宇科技有限公司 干蚀刻设备
US10903066B2 (en) 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber
US10276364B2 (en) 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control
KR102398614B1 (ko) * 2018-11-14 2022-05-17 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 장치의 세정 방법
CN114402416A (zh) 2019-07-17 2022-04-26 朗姆研究公司 用于衬底处理的氧化分布调节
CN117344291A (zh) * 2023-11-23 2024-01-05 拓荆科技(上海)有限公司 薄膜沉积设备和方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6074518A (en) * 1994-04-20 2000-06-13 Tokyo Electron Limited Plasma processing apparatus
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
WO2004100247A1 (ja) * 2003-05-12 2004-11-18 Sosul Co., Ltd. プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステム
US20050006028A1 (en) * 2003-06-20 2005-01-13 Lam Research Corporation Magnetic enhancement for mechanical confinement of plasma

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
KR0184849B1 (ko) * 1990-07-18 1999-05-01 하지메 히토추야나기 다이아몬드 제조방법 및 장치
JPH0817171B2 (ja) * 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
JP3375646B2 (ja) * 1991-05-31 2003-02-10 株式会社日立製作所 プラズマ処理装置
KR100297358B1 (ko) 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
JP3151014B2 (ja) * 1991-09-20 2001-04-03 住友精密工業株式会社 ウエーハ端面のエッチング方法とその装置
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
JPH07206768A (ja) 1994-01-12 1995-08-08 Nippon Oil Co Ltd 光学活性コハク酸又はその誘導体の製造法
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
DE19622015A1 (de) * 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6232236B1 (en) * 1999-08-03 2001-05-15 Applied Materials, Inc. Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
KR100433008B1 (ko) * 2001-04-18 2004-05-31 (주)소슬 플라즈마 식각 장치
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
KR100442194B1 (ko) * 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
US6936546B2 (en) * 2002-04-26 2005-08-30 Accretech Usa, Inc. Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
DE102004024893A1 (de) * 2003-05-27 2005-04-14 Samsung Electronics Co., Ltd., Suwon Vorrichtung und Verfahren zum Ätzen eines Wafer-Rands
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
JP4459666B2 (ja) * 2004-03-12 2010-04-28 株式会社半導体エネルギー研究所 除去装置
JP2004336069A (ja) * 2004-07-07 2004-11-25 Semiconductor Energy Lab Co Ltd アッシング装置及びアッシング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6074518A (en) * 1994-04-20 2000-06-13 Tokyo Electron Limited Plasma processing apparatus
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
WO2004100247A1 (ja) * 2003-05-12 2004-11-18 Sosul Co., Ltd. プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステム
US20050006028A1 (en) * 2003-06-20 2005-01-13 Lam Research Corporation Magnetic enhancement for mechanical confinement of plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725034B (zh) * 2015-06-17 2021-04-21 日商東京威力科創股份有限公司 電漿處理方法

Also Published As

Publication number Publication date
CN1909193A (zh) 2007-02-07
JP2007043149A (ja) 2007-02-15
KR101218114B1 (ko) 2013-01-18
US7951261B2 (en) 2011-05-31
EP1750294A1 (en) 2007-02-07
KR101218114B9 (ko) 2025-01-10
KR20070016585A (ko) 2007-02-08
CN1909193B (zh) 2010-05-12
JP5179730B2 (ja) 2013-04-10
US20080173401A1 (en) 2008-07-24
TW200710989A (en) 2007-03-16

Similar Documents

Publication Publication Date Title
TWI407501B (zh) 電漿蝕刻裝置
JP2007043149A5 (enExample)
JP7425160B2 (ja) 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ
KR102656763B1 (ko) 플라즈마 차폐 장치가 있는 플라즈마 처리 시스템
KR102789802B1 (ko) 이차 플라즈마 주입을 이용한 플라즈마 에칭 시스템들 및 방법들
EP2026374B1 (en) Plasma processing apparatus, plasma processing method and storage medium
US8864936B2 (en) Apparatus and method for processing substrate
TWI502619B (zh) 用於電漿處理設備之電極、電漿處理設備、以及使用電漿處理設備產生電漿的方法
CN111095500B (zh) 载置台和基板处理装置
KR101291347B1 (ko) 기판에서 불소계 폴리머를 제거하기 위한 장치 및 그를위한 방법
TWI404138B (zh) 電漿蝕刻裝置
US20080236754A1 (en) Plasma processing apparatus
KR101098976B1 (ko) 기판 처리 장치
KR100803825B1 (ko) 플라즈마 식각 시스템
KR101146132B1 (ko) 플라즈마 처리 장치
KR100672696B1 (ko) 플라즈마를 이용한 반도체 소자의 세정장치 및 방법
KR20070058760A (ko) 저압 플라즈마 발생장치
JP2004047500A (ja) プラズマ処理装置およびその初期化方法
KR100774979B1 (ko) 기판을 처리하는 장치 및 방법
KR100774497B1 (ko) 기판을 처리하는 장치 및 방법
KR101445743B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR101267819B1 (ko) 플라즈마 발생 모듈 및 이를 포함하는 기판 처리 장치
KR100772612B1 (ko) 기판을 처리하는 장치 및 방법
KR20250022790A (ko) 원격 플라즈마 프로세스들을 위한 식각제들을 생성하기 위한 장치
KR20080072231A (ko) 상압 플라즈마 처리 장치