KR101218114B1 - 플라즈마 식각 장치 - Google Patents

플라즈마 식각 장치 Download PDF

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Publication number
KR101218114B1
KR101218114B1 KR1020050071385A KR20050071385A KR101218114B1 KR 101218114 B1 KR101218114 B1 KR 101218114B1 KR 1020050071385 A KR1020050071385 A KR 1020050071385A KR 20050071385 A KR20050071385 A KR 20050071385A KR 101218114 B1 KR101218114 B1 KR 101218114B1
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KR
South Korea
Prior art keywords
substrate
electrode
plasma
region
chamber
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Expired - Lifetime
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KR1020050071385A
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English (en)
Korean (ko)
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KR101218114B9 (ko
KR20070016585A (ko
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전부일
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주성엔지니어링(주)
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Priority to KR1020050071385A priority Critical patent/KR101218114B1/ko
Priority to JP2006203033A priority patent/JP5179730B2/ja
Priority to EP06118054A priority patent/EP1750294A1/en
Priority to CN2006100995903A priority patent/CN1909193B/zh
Priority to US11/462,313 priority patent/US7951261B2/en
Priority to TW095128429A priority patent/TWI407501B/zh
Publication of KR20070016585A publication Critical patent/KR20070016585A/ko
Application granted granted Critical
Publication of KR101218114B1 publication Critical patent/KR101218114B1/ko
Publication of KR101218114B9 publication Critical patent/KR101218114B9/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020050071385A 2005-08-04 2005-08-04 플라즈마 식각 장치 Expired - Lifetime KR101218114B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050071385A KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치
JP2006203033A JP5179730B2 (ja) 2005-08-04 2006-07-26 プラズマエッチング装置
EP06118054A EP1750294A1 (en) 2005-08-04 2006-07-28 Plasma etching apparatus
CN2006100995903A CN1909193B (zh) 2005-08-04 2006-08-01 等离子蚀刻设备
US11/462,313 US7951261B2 (en) 2005-08-04 2006-08-03 Plasma etching apparatus
TW095128429A TWI407501B (zh) 2005-08-04 2006-08-03 電漿蝕刻裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050071385A KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치

Publications (3)

Publication Number Publication Date
KR20070016585A KR20070016585A (ko) 2007-02-08
KR101218114B1 true KR101218114B1 (ko) 2013-01-18
KR101218114B9 KR101218114B9 (ko) 2025-01-10

Family

ID=37309021

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050071385A Expired - Lifetime KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치

Country Status (6)

Country Link
US (1) US7951261B2 (enExample)
EP (1) EP1750294A1 (enExample)
JP (1) JP5179730B2 (enExample)
KR (1) KR101218114B1 (enExample)
CN (1) CN1909193B (enExample)
TW (1) TWI407501B (enExample)

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WO2008100139A1 (en) * 2007-02-13 2008-08-21 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
US8197636B2 (en) * 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
CN102543798A (zh) * 2007-07-12 2012-07-04 应用材料公司 处理基板边缘区域的装置与方法
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
KR101432562B1 (ko) * 2007-12-31 2014-08-21 (주)소슬 기판 처리 장치 및 기판 처리 방법
US8702999B2 (en) 2008-02-01 2014-04-22 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
CN101939466B (zh) * 2008-02-06 2012-07-18 友技科株式会社 等离子体cvd装置、等离子体cvd方法
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
WO2009107718A1 (ja) 2008-02-27 2009-09-03 東京エレクトロン株式会社 プラズマエッチング処理装置およびプラズマエッチング処理方法
US20090293907A1 (en) * 2008-05-28 2009-12-03 Nancy Fung Method of substrate polymer removal
KR20100004857A (ko) * 2008-07-03 2010-01-13 주성엔지니어링(주) 건식 에칭 장치
EP2180768A1 (en) * 2008-10-23 2010-04-28 TNO Nederlandse Organisatie voor Toegepast Wetenschappelijk Onderzoek Apparatus and method for treating an object
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US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
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US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
CN103889138B (zh) * 2012-12-24 2016-06-29 中国科学院微电子研究所 等离子体放电装置
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TWM503056U (zh) * 2014-07-24 2015-06-11 Wen-Hsin Chiang 用於電漿反應裝置之襯套單元
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
DE102015209503B4 (de) * 2015-05-22 2016-12-08 Daniel Daferner Reaktor und Verfahren zur Behandlung eines Substrats
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10113229B2 (en) * 2015-12-21 2018-10-30 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling ion/neutral ratio of a plasma source
US9738977B1 (en) 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
CN107689326A (zh) * 2016-08-05 2018-02-13 上海新昇半导体科技有限公司 一种晶圆减薄方法及装置
WO2018119959A1 (zh) * 2016-12-29 2018-07-05 深圳市柔宇科技有限公司 干蚀刻设备
US10903066B2 (en) 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber
US10276364B2 (en) 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control
KR102398614B1 (ko) * 2018-11-14 2022-05-17 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 장치의 세정 방법
CN114402416A (zh) 2019-07-17 2022-04-26 朗姆研究公司 用于衬底处理的氧化分布调节
CN117344291A (zh) * 2023-11-23 2024-01-05 拓荆科技(上海)有限公司 薄膜沉积设备和方法

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Also Published As

Publication number Publication date
CN1909193A (zh) 2007-02-07
JP2007043149A (ja) 2007-02-15
US7951261B2 (en) 2011-05-31
EP1750294A1 (en) 2007-02-07
KR101218114B9 (ko) 2025-01-10
KR20070016585A (ko) 2007-02-08
CN1909193B (zh) 2010-05-12
JP5179730B2 (ja) 2013-04-10
TWI407501B (zh) 2013-09-01
US20080173401A1 (en) 2008-07-24
TW200710989A (en) 2007-03-16

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