CN1904133B - 溅射装置和溅射方法 - Google Patents

溅射装置和溅射方法 Download PDF

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Publication number
CN1904133B
CN1904133B CN2006101076287A CN200610107628A CN1904133B CN 1904133 B CN1904133 B CN 1904133B CN 2006101076287 A CN2006101076287 A CN 2006101076287A CN 200610107628 A CN200610107628 A CN 200610107628A CN 1904133 B CN1904133 B CN 1904133B
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China
Prior art keywords
target
targets
switching
sputtering
potential
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CN2006101076287A
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English (en)
Chinese (zh)
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CN1904133A (zh
Inventor
小林大士
谷典明
小松孝
清田淳也
中村肇
新井真
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Ulvac Inc
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Ulvac Inc
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Publication of CN1904133A publication Critical patent/CN1904133A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN2006101076287A 2005-07-29 2006-07-28 溅射装置和溅射方法 Active CN1904133B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005220888 2005-07-29
JP2005220888A JP4922580B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法
JP2005-220888 2005-07-29

Publications (2)

Publication Number Publication Date
CN1904133A CN1904133A (zh) 2007-01-31
CN1904133B true CN1904133B (zh) 2010-05-12

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ID=37673493

Family Applications (1)

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CN2006101076287A Active CN1904133B (zh) 2005-07-29 2006-07-28 溅射装置和溅射方法

Country Status (4)

Country Link
JP (1) JP4922580B2 (https=)
KR (1) KR101231669B1 (https=)
CN (1) CN1904133B (https=)
TW (1) TWI401334B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
CN102187007A (zh) * 2008-10-16 2011-09-14 株式会社爱发科 溅射装置、薄膜形成方法和场效应晶体管的制造方法
KR20130121935A (ko) * 2011-02-08 2013-11-06 샤프 가부시키가이샤 마그네트론 스퍼터링 장치, 마그네트론 스퍼터링 장치의 제어방법, 및 성막방법
CN103632913B (zh) * 2012-08-28 2016-06-22 中微半导体设备(上海)有限公司 等离子体处理装置
CN108505006A (zh) * 2018-05-23 2018-09-07 西安理工大学 一种采用磁控溅射沉积纳米纯Ti薄膜的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1281057A (zh) * 1999-10-11 2001-01-24 中国科学院力学研究所 脉冲辅助过滤电弧沉积薄膜装置和方法
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
DE19949394A1 (de) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1281057A (zh) * 1999-10-11 2001-01-24 中国科学院力学研究所 脉冲辅助过滤电弧沉积薄膜装置和方法
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平3-277771A 1991.12.09
JP特开2000-353316A 2000.12.19

Also Published As

Publication number Publication date
TWI401334B (zh) 2013-07-11
TW200716775A (en) 2007-05-01
KR101231669B1 (ko) 2013-02-08
JP4922580B2 (ja) 2012-04-25
KR20070014993A (ko) 2007-02-01
CN1904133A (zh) 2007-01-31
JP2007031816A (ja) 2007-02-08

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