JP4922580B2 - スパッタリング装置及びスパッタリング方法 - Google Patents

スパッタリング装置及びスパッタリング方法 Download PDF

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Publication number
JP4922580B2
JP4922580B2 JP2005220888A JP2005220888A JP4922580B2 JP 4922580 B2 JP4922580 B2 JP 4922580B2 JP 2005220888 A JP2005220888 A JP 2005220888A JP 2005220888 A JP2005220888 A JP 2005220888A JP 4922580 B2 JP4922580 B2 JP 4922580B2
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JP
Japan
Prior art keywords
target
targets
sputtering
potential
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005220888A
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English (en)
Japanese (ja)
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JP2007031816A5 (https=
JP2007031816A (ja
Inventor
大士 小林
典明 谷
孝 小松
淳也 清田
肇 中村
新井　　真
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2005220888A priority Critical patent/JP4922580B2/ja
Priority to TW095125499A priority patent/TWI401334B/zh
Priority to KR1020060069714A priority patent/KR101231669B1/ko
Priority to CN2006101076287A priority patent/CN1904133B/zh
Publication of JP2007031816A publication Critical patent/JP2007031816A/ja
Publication of JP2007031816A5 publication Critical patent/JP2007031816A5/ja
Application granted granted Critical
Publication of JP4922580B2 publication Critical patent/JP4922580B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2005220888A 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法 Expired - Fee Related JP4922580B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005220888A JP4922580B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法
TW095125499A TWI401334B (zh) 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method
KR1020060069714A KR101231669B1 (ko) 2005-07-29 2006-07-25 스퍼터링 장치 및 스퍼터링 방법
CN2006101076287A CN1904133B (zh) 2005-07-29 2006-07-28 溅射装置和溅射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005220888A JP4922580B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法

Publications (3)

Publication Number Publication Date
JP2007031816A JP2007031816A (ja) 2007-02-08
JP2007031816A5 JP2007031816A5 (https=) 2008-08-21
JP4922580B2 true JP4922580B2 (ja) 2012-04-25

Family

ID=37673493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005220888A Expired - Fee Related JP4922580B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法

Country Status (4)

Country Link
JP (1) JP4922580B2 (https=)
KR (1) KR101231669B1 (https=)
CN (1) CN1904133B (https=)
TW (1) TWI401334B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
CN102187007A (zh) * 2008-10-16 2011-09-14 株式会社爱发科 溅射装置、薄膜形成方法和场效应晶体管的制造方法
KR20130121935A (ko) * 2011-02-08 2013-11-06 샤프 가부시키가이샤 마그네트론 스퍼터링 장치, 마그네트론 스퍼터링 장치의 제어방법, 및 성막방법
CN103632913B (zh) * 2012-08-28 2016-06-22 中微半导体设备(上海)有限公司 等离子体处理装置
CN108505006A (zh) * 2018-05-23 2018-09-07 西安理工大学 一种采用磁控溅射沉积纳米纯Ti薄膜的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
CN1136332C (zh) * 1999-10-11 2004-01-28 中国科学院力学研究所 脉冲辅助过滤电弧沉积薄膜装置和方法
DE19949394A1 (de) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法

Also Published As

Publication number Publication date
TWI401334B (zh) 2013-07-11
TW200716775A (en) 2007-05-01
KR101231669B1 (ko) 2013-02-08
CN1904133B (zh) 2010-05-12
KR20070014993A (ko) 2007-02-01
CN1904133A (zh) 2007-01-31
JP2007031816A (ja) 2007-02-08

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