TWI401334B - Sputtering apparatus and sputtering method - Google Patents

Sputtering apparatus and sputtering method Download PDF

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Publication number
TWI401334B
TWI401334B TW095125499A TW95125499A TWI401334B TW I401334 B TWI401334 B TW I401334B TW 095125499 A TW095125499 A TW 095125499A TW 95125499 A TW95125499 A TW 95125499A TW I401334 B TWI401334 B TW I401334B
Authority
TW
Taiwan
Prior art keywords
targets
target
power source
sputtering
potential
Prior art date
Application number
TW095125499A
Other languages
English (en)
Chinese (zh)
Other versions
TW200716775A (en
Inventor
小林大士
谷典明
小松孝
清田淳也
中村肇
新井真
Original Assignee
愛發科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 愛發科股份有限公司 filed Critical 愛發科股份有限公司
Publication of TW200716775A publication Critical patent/TW200716775A/zh
Application granted granted Critical
Publication of TWI401334B publication Critical patent/TWI401334B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW095125499A 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method TWI401334B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005220888A JP4922580B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法

Publications (2)

Publication Number Publication Date
TW200716775A TW200716775A (en) 2007-05-01
TWI401334B true TWI401334B (zh) 2013-07-11

Family

ID=37673493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125499A TWI401334B (zh) 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method

Country Status (4)

Country Link
JP (1) JP4922580B2 (https=)
KR (1) KR101231669B1 (https=)
CN (1) CN1904133B (https=)
TW (1) TWI401334B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
CN102187007A (zh) * 2008-10-16 2011-09-14 株式会社爱发科 溅射装置、薄膜形成方法和场效应晶体管的制造方法
KR20130121935A (ko) * 2011-02-08 2013-11-06 샤프 가부시키가이샤 마그네트론 스퍼터링 장치, 마그네트론 스퍼터링 장치의 제어방법, 및 성막방법
CN103632913B (zh) * 2012-08-28 2016-06-22 中微半导体设备(上海)有限公司 等离子体处理装置
CN108505006A (zh) * 2018-05-23 2018-09-07 西安理工大学 一种采用磁控溅射沉积纳米纯Ti薄膜的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
TW452601B (en) * 1997-06-06 2001-09-01 Anelva Corp Sputtering device and sputtering method
TW486719B (en) * 1999-10-13 2002-05-11 Balzers Process Systems Gmbh Power supply unit and method to reduce the spark formation when sputtering
TW593714B (en) * 2000-09-07 2004-06-21 Ulvac Inc Sputtering apparatus and film manufacturing method
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
CN1136332C (zh) * 1999-10-11 2004-01-28 中国科学院力学研究所 脉冲辅助过滤电弧沉积薄膜装置和方法
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
TW452601B (en) * 1997-06-06 2001-09-01 Anelva Corp Sputtering device and sputtering method
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
TW486719B (en) * 1999-10-13 2002-05-11 Balzers Process Systems Gmbh Power supply unit and method to reduce the spark formation when sputtering
TW593714B (en) * 2000-09-07 2004-06-21 Ulvac Inc Sputtering apparatus and film manufacturing method
JP2004346388A (ja) * 2003-05-23 2004-12-09 Ulvac Japan Ltd スパッタ源、スパッタリング装置、及びスパッタリング方法

Also Published As

Publication number Publication date
TW200716775A (en) 2007-05-01
KR101231669B1 (ko) 2013-02-08
CN1904133B (zh) 2010-05-12
JP4922580B2 (ja) 2012-04-25
KR20070014993A (ko) 2007-02-01
CN1904133A (zh) 2007-01-31
JP2007031816A (ja) 2007-02-08

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