KR101231669B1 - 스퍼터링 장치 및 스퍼터링 방법 - Google Patents

스퍼터링 장치 및 스퍼터링 방법 Download PDF

Info

Publication number
KR101231669B1
KR101231669B1 KR1020060069714A KR20060069714A KR101231669B1 KR 101231669 B1 KR101231669 B1 KR 101231669B1 KR 1020060069714 A KR1020060069714 A KR 1020060069714A KR 20060069714 A KR20060069714 A KR 20060069714A KR 101231669 B1 KR101231669 B1 KR 101231669B1
Authority
KR
South Korea
Prior art keywords
target
targets
sputtering
potential
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020060069714A
Other languages
English (en)
Korean (ko)
Other versions
KR20070014993A (ko
Inventor
모토시 고바야시
노리아키 다니
다카시 고마츠
쥰야 기요타
하지메 나카무라
마코토 아라이
Original Assignee
가부시키가이샤 알박
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20070014993A publication Critical patent/KR20070014993A/ko
Application granted granted Critical
Publication of KR101231669B1 publication Critical patent/KR101231669B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020060069714A 2005-07-29 2006-07-25 스퍼터링 장치 및 스퍼터링 방법 Active KR101231669B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005220888A JP4922580B2 (ja) 2005-07-29 2005-07-29 スパッタリング装置及びスパッタリング方法
JPJP-P-2005-00220888 2005-07-29

Publications (2)

Publication Number Publication Date
KR20070014993A KR20070014993A (ko) 2007-02-01
KR101231669B1 true KR101231669B1 (ko) 2013-02-08

Family

ID=37673493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060069714A Active KR101231669B1 (ko) 2005-07-29 2006-07-25 스퍼터링 장치 및 스퍼터링 방법

Country Status (4)

Country Link
JP (1) JP4922580B2 (https=)
KR (1) KR101231669B1 (https=)
CN (1) CN1904133B (https=)
TW (1) TWI401334B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
CN102187007A (zh) * 2008-10-16 2011-09-14 株式会社爱发科 溅射装置、薄膜形成方法和场效应晶体管的制造方法
KR20130121935A (ko) * 2011-02-08 2013-11-06 샤프 가부시키가이샤 마그네트론 스퍼터링 장치, 마그네트론 스퍼터링 장치의 제어방법, 및 성막방법
CN103632913B (zh) * 2012-08-28 2016-06-22 中微半导体设备(上海)有限公司 等离子体处理装置
CN108505006A (zh) * 2018-05-23 2018-09-07 西安理工大学 一种采用磁控溅射沉积纳米纯Ti薄膜的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002508447A (ja) * 1997-12-17 2002-03-19 ユナキス・トレーディング・アクチェンゲゼルシャフト マグネトロンスパッタ供給源

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
CN1136332C (zh) * 1999-10-11 2004-01-28 中国科学院力学研究所 脉冲辅助过滤电弧沉积薄膜装置和方法
DE19949394A1 (de) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
CN1358881A (zh) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 真空多元溅射镀膜方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002508447A (ja) * 1997-12-17 2002-03-19 ユナキス・トレーディング・アクチェンゲゼルシャフト マグネトロンスパッタ供給源

Also Published As

Publication number Publication date
TWI401334B (zh) 2013-07-11
TW200716775A (en) 2007-05-01
CN1904133B (zh) 2010-05-12
JP4922580B2 (ja) 2012-04-25
KR20070014993A (ko) 2007-02-01
CN1904133A (zh) 2007-01-31
JP2007031816A (ja) 2007-02-08

Similar Documents

Publication Publication Date Title
CN101528972A (zh) 薄膜形成方法及薄膜形成装置
KR101231668B1 (ko) 스퍼터링 장치 및 스퍼터링 방법
JP5322234B2 (ja) スパッタリング方法及びスパッタリング装置
CN110438462A (zh) 一种改善氧化物半导体成膜质量的磁控溅射装置
CN100535178C (zh) 溅射方法及其装置
KR101231669B1 (ko) 스퍼터링 장치 및 스퍼터링 방법
TWI414621B (zh) Sputtering target and sputtering method using the target
US6740212B2 (en) Rectangular magnetron sputtering cathode with high target utilization
KR20170064527A (ko) 마그네트론 스퍼터 전극용의 자석 유닛 및 스퍼터링 장치
CN109154076A (zh) 成膜方法和溅射装置
KR101113123B1 (ko) 스퍼터링 방법
TWI383061B (zh) Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode
JP5322235B2 (ja) スパッタリング方法
JPH11350123A (ja) 薄膜製造装置および液晶表示基板の製造方法
JP3778501B2 (ja) スパッタリング装置およびスパッタリング方法
JPH11350130A (ja) 薄膜形成装置
JP2025119345A (ja) 成膜装置及び成膜方法
JPH09111448A (ja) スパッタ装置
CN117203364A (zh) 用于膜的沉积的脉冲dc功率
JPH1192928A (ja) スパッタ方法
JP2001262339A (ja) 磁性材膜の成膜方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20151229

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170116

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20171207

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20181219

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20200120

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000