CN1898810A - 用于发光器件的封装 - Google Patents

用于发光器件的封装 Download PDF

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CN1898810A
CN1898810A CNA2005800013496A CN200580001349A CN1898810A CN 1898810 A CN1898810 A CN 1898810A CN A2005800013496 A CNA2005800013496 A CN A2005800013496A CN 200580001349 A CN200580001349 A CN 200580001349A CN 1898810 A CN1898810 A CN 1898810A
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CN100502064C (zh
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朴准奭
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Suzhou Lekin Semiconductor Co Ltd
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Abstract

本发明公开了一种发光器件封装,包括:金属基底;电路层,提供在金属基底的上侧处以提供导电通路;发光器件,安装在金属基底上厚度小于第一区域的第二区域内;绝缘层,夹在金属基底和电路层之间;电极层,提供在电路层上侧;和导线,用于连接电极层和发光器件。此外,因为发光器件安置在金属基底的小厚度部分上,因而提供发光效率改善的发光器件封装。

Description

用于发光器件的封装
技术领域
本发明涉及发光器件封装,更具体涉及热辐射性能优异且允许自由进行电路设计以控制半导体发光器件的光发射的发光器件封装。
背景技术
通常,半导体发光器件可以包括LED(发光二极管),LED是利用复合半导体的特性用于将电信号转换为红外、可见和紫外光形式发光的器件。
至于LED的使用范围,LED一般用于家庭用品、遥控器、电信号、显示器、各种自动化设备等,并大致分成IRED(红外发射二极管)和VLED(可见光发射二极管)。上述LED的结构一般如下所述。
通常,在蓝色LED中,N型GaN层形成在蓝宝石衬底上,N-金属形成在N型GaN层表面一侧上,并且激发层形成在除形成有N-金属区域之外的部分上。而且,P型GaN层形成在激发层上,并且P-金属形成在P型GaN层上。所属激发层是通过流过P-金属的空穴和流过N-金属的电子相互复合而发光的层。
前述LED根据光输出密度而用于家庭用品、电信号等。尤其是,LED具有变得细小的趋势,这是因为信息通讯设备尺寸上变得更小,而周边设备如电阻、电容器、噪声滤波器等正变得更小。
结果,发光器件被封装成表面安装器件(下文称为“SMD”)型,使得发光器件可以直接安装至PCB(印刷电路板)。因此,用作显示器的LED灯同样被发展成为SMD型。
该SMD可替代现有的简单发光灯,并用作产生各种颜色的发光显示器、字符显示器、图像显示器等。
如上所述,由于LED的用途已经变得广阔,因此所需的发光变得越来越高,如用于日常生活的灯、救援信号灯等。因而,近年来高输出LED得到广泛应用。
图1是根据现有技术的发光器件封装结构的透视图。
如其中所示,在根据现有技术的发光器件封装100的结构中,从外部PCB向发光器件供电的电极引线框130分别形成和排列在封装体120上。
透镜110附着在封装体120上,以便改善从用作发光器件的LED140产生的光的发光效率。
具有安装在其中的LED140的组合件连接至封装体120的底部。首先,将具有高反射率的发射杯160结合至导电体170。LED140利用倒装芯片接合或导线接合安装在由硅形成的子底座150上。虽然没有示出,但是通过刻蚀子底座150而在子底座内形成反射孔,在反射孔上形成反射层,随后安装LED140。
当LED140安装在子底座150上时,将子底座150安装至形成在导电体170上的反射杯160上,随后使用LED体120的电极引线框130进行电连接过程,从而供电。
这样组装的发光器件封装100相对于反射杯160反射LED140所产生的光,随后使光经透镜110漫射至外部。
图2是表示提供在电路衬底200上的多个根据现有技术的发光器件封装100a、100b和100c的图。
根据图2,与图1所示的发光器件封装不同,多个LED 100a、100b和100c集成使用,其中分别提供有红、绿和蓝三色并且引线框130a、130b和130c分别通过焊点180接合至电路衬底200上。
然而,具有前述结构的发光器件封装100存在以下问题,即当提高电流密度以获得具有高输出的光时,由于封装中热辐射性能差而导致产生高温热。当在封装中存在高温热而没有辐射时,电阻变得非常高从而导致发光效率下降。
而且,现有技术的发光器件封装100具有缺陷在于由于导体170、反射杯160、封装体120等相互分离,因此由于其接触部位的高热阻导致LED产生的热不易传递至外部。
而且,不便在于因为仅有一个LED安装在封装体120中,因此必须将三个发光器件封装置于一个装置中,以便显示高输出的白色。在此,另一缺点就是控制电路变得复杂且体积变得更大。
而且,在相互接合的多个单一单元型发光器件封装100a、100b和100c中,整个衬底200的表面积增加,使得电极从外部连接,从而增加组装过程的成本。
此外,现有技术的发光器件封装100不仅在热辐射方面而且在结构方面也存在问题。具体来说,问题在于因为在模制时可能形成气泡和单一单元型发光器件封装排列在广大的表面区域上,因此由于RGB颜色混合的特征导致不能在理想点光源上混合颜色。此外,还有问题在于由于电极、绝缘层、模制空间和LED的排列,使得所安装的透镜厚度变大。
发明内容
[技术问题]
本发明针对于解决上述问题,并且本发明目的是提供发光器件封装,该封装通过在将发光器件直接安装在金属PCB上时消除阻碍发光器件从多层安装结构热辐射的结构而改善导热。
此外,本发明的另一目的是提供发光器件封装,其中发光器件的每一组件以模块方式组建并安装,而且将多个发光器件封装有效排列在金属PCB上,这在将发光器件直接安装在金属PCB上时使得电路结构更简单。
此外,本发明的另一目的是提供发光器件封装,该封装改善金属PCB结构和模制结构,从而在制备用于分配光的透镜时使透镜厚度最小并且使模制过程中产生的气泡所引起的衰减率最小。
[技术方案]
为了实现上述目的,根据本发明提供发光器件封装,包括:金属基底;电路层,提供在金属基底上侧以提供导电通路;绝缘层,夹在金属基底和电路层之间;发光器件,安装在金属基底的上表面上的除去绝缘层的开放空间中;电极层,提供在电路层上侧;和用于电连接电路层和发光器件的连接部分。
因此,根据本发明的另一方面提供发光器件封装,包括:金属基底;电路层,提供在金属基底上侧以提供导电通路;发光器件,安装在金属基底上比第一区域的厚度更小的第二区域中;绝缘层,夹在金属基底和电路层之间;电极层,提供在电路层上侧;和用于电连接电路层和发光器件的连接部分。
[有利效果]
根据本发明,因为可以有效释放从发光器件封装内部产生的热,因此可以将尽可能高输出的发光器件以各种形式排列在封装内的受限空间中。因而,发光器件封装可以各种方式用于具有尺寸缩减趋势的发光器件应用中。
因此,根据本发明,可以降低生产成本并可以使生产过程最简化。此外,在热辐射、具有高集光性的光学、力学、产品可靠性等方面可以均一地获得出色的特性。
附图说明
参照附图将更加完整地理解本发明,其中:
图1是根据现有技术的发光器件封装结构的透视图;
图2是表示提供在电路衬底上的多个根据现有技术的发光器件封装的图;
图3是根据本发明第一实施方案的发光器件封装的剖面图;
图4是根据本发明第一实施方案的发光器件封装的平面图;
图5是显示根据本发明第二实施方案的发光器件封装的内部结构的剖面图;
图6、7、8和9是显示以直线、圆、正方和六边形排列在单一金属基底上的发光器件封装的图;
图10是以直线排列的根据本发明第二实施方案的发光器件封装的放大图。
具体实施方式
以下,将参考附图详细说明根据本发明优选实施方案的发光器件封装。
第一实施方案
图3是根据本发明第一实施方案的发光器件封装的剖面图。
参考图3,根据本发明第一实施方案的发光器件封装的包括透镜部分310、丝网层392、发光器件360、电极层320、电路层330、绝缘层340和金属基底350。
首先,金属基底350是金属PCB的最底层,其功能是将其他组件安装在其顶层并支撑它们,并将从发光器件360产生的热向底部表面释放。金属基底350可以与进一步提供在其底部表面的散热器接合。优选散热器和金属基底350各形成固定孔并通过螺栓型固定相互接合。
此外,如果将传热材料应用或提供在金属基底350和散热器之间的接合表面上,就可以进一步使热辐射效果最大化。
绝缘层340使电路层330和金属基底350之间电绝缘,使得在电路层330中流动的电流不会流向金属基底350。但是,由于绝缘层340在执行绝缘功能的同时还起到热阻体的作用,从而成为有效热辐射的阻碍。
因此,在本发明的第一实施方案中,至少在安装发光器件360的位置处移除绝缘层340。换言之,当发光器件360的电极结构向上形成时,仅需要物理接合而不需要绝缘层340的辅助。
为了移除安装发光器件360处的表面,绝缘层340可以通过研磨或刻蚀来加工。而且,发光器件360在安装在金属基底350上时通过接合元件如导热硬化剂而接合。
电路层330置于绝缘层340的顶部。在根据本发明第一实施方案的发光器件封装中,由于可以提供多个以各模块组建的发光器件360,因此电路层330包括用于向发光器件360供电的多个电路。如同绝缘层340一样,移除安放发光器件360处部位的电路层330。
如上所述,由于在一个金属基底350上提供多个发光器件360,因此有利于为了电路设计或封装应用而将电路层330构建成在一个模块上的串联连接电路。
使发光器件360通电的电极层320位于电路层330的尖端,从中移除发光器件360的所处部位并连接至导线390。因而,在本发明的第一实施方案中,可知电极层320的作用为现有技术的引线框。导线390执行电连接发光器件和电极层的功能。
此外,电极层320一般由金属如镍制成,并且在其上表面上提供镀层322以改善导电性。优选地,镀层332由厚度为0.3mm的金或更优选通过电镀方法形成。在该结构中,优选以同样的方式形成电路层330和上表面被镀的电极层320,使得该两层的厚度在200mm以内。
发光器件360提供有由复合半导体制成的发光部分和用于供电的电极,当从电极层320供电时,进行发光。作为发光器件,优选实例是发光二极管。
如前述结构所清楚表明,发光器件360可通过嵌入在绝缘层340、电路层330和电极层320的开放空间A中而直接安装在金属基底350上。
至于发光器件360,可以包含SiOB(硅光实验台)芯片、红色LED芯片、绿色LED芯片、蓝色LED芯片、黄色LED芯片、橙色LED芯片等。具体来说,SiOB芯片是指通过将杯型空间刻蚀成硅衬底并在该空间中安装LED而制成的芯片。硅衬底可由其他材料制成。
电极层320具有丝网层392,其形成在通过发光器件360的电极和导线390所接合部位的外侧。透镜部分310附着至丝网层392。透镜部分310可通过模制部分380提供,在其中模制透明树脂材料,并且模制部分380可通过附着至丝网层392的步骤而精确定位模制成型。
图4是根据本发明第一实施方案的发光器件封装的平面图,具体来说,其中清楚示出丝网层的形状。但是,导线非常细小因而没有示出,显然多个芯片可以同时安装在发光器件360上。
参考图4,为了保护发光器件360和导线390,从金属基底350上表面比安置导线390的部位更高处模制构成透镜部分310的模制空间380的内部空间,特别是采用合成树脂材料如环氧树脂或硅来模制。模制部分380是一种高反射填充材料,并且均一分配由发光器件360漫射的光。
如上所见,根据本发明第一实施方案的发光器件封装具有的优点是缩减尺寸、自由排列和可采用具有改进的热辐射效果的各模块构建,这是因为现有技术的发光器件封装的反射杯、引线框和透镜部分被集成安装在金属PCB上。
第二实施方案
在本发明第二实施方案的说明中,引入前述本发明第一实施方案的许多部件。以下,仅详细描述特征不同的部分。
图5是显示根据本发明第二实施方案的发光器件封装的内部结构的剖面图。
参考图5,根据本发明第二实施方案的发光器件封装包括透镜部分310a、丝网部分392a、发光器件360a、电极层320a、电路层330a、绝缘层340a、导线390a和金属基底350。透镜部分310a、丝网部分392a、发光器件360a、电极层320a、电路层330a和绝缘层340a的功能、结构和材料均类似于本发明的第一实施方案。
与第一实施方案的唯一不同是在安置发光器件360a处区域中仅移除金属基底350a,并且发光器件360a置于从中移除金属基底350a的移除区域B中。
更具体地,移除区域B可通过给定加工方法例如研磨等加工。当发光器件360a嵌入移除区域B中时,透镜部分310a的上表面建立平衡,并且透镜部分的总高度可低于第一实施方案中的。此外,发光器件360a插入移除区域B中,因而允许底部表面通过导热硬化剂附着。
安装在移除区域B中的发光器件360a通过电极层320a和位置相对高于发光器件360a的导线390a而通电。如同在第一实施方案中一样,提供模制部分380a以保护发光器件360a和导线390a。
此时,模制部分380a高度同样较低,这样可以是因为发光器件360a插入并置于金属基底350a中,并且接合导线390a的空间也置于较低侧。在本发明第二实施方案中,优选模制部分380a形成高度为保护发光器件360a和接合部分390a的高度。
通过这种结构,透镜部分310a的厚度可更小,并且可进一步使透镜部分310a的最高侧平坦并缩减高度,因而使其能够使用各种透镜,包括菲涅耳(Fresnel)透镜。
此外,合成树脂材料如环氧树脂或硅的模制元件直接注射进金属基底350a的凹处,从而无需如现有技术那样使用沟道来注射模制元件。由此,可防止在模制时产生气泡。
如上所述,发光器件360a的位置、模制部分380a的结构和透镜厚度的下降允许红色、绿色和蓝色在更小的区域中相互混合,由此产生接近于点光源的最终漫射光。
此外,移除区域B可形成在圆柱形凹陷中或者圆柱形状凹陷B的侧面可以倾斜预定角度。形成预定角度的凹陷B内表面可提高光反射率。而且,优选凹陷B侧面为光泽涂布或提供有反射材料以提高反射率。也就是当发光器件360a在圆柱形状凹陷B中发光时,金属基底350a的倾斜表面反射几乎所有向上的光,因而可以提高发光器件360a的发光效率。
第三实施方案
本发明的第三实施方案特征在于其提出一个总体结构,其中将第一和第二实施方案中提出的发光器件封装用作单一单元。
参考图6,根据本实施方案,在金属基底350a上提供多个发光器件封装,并且透镜部分310a分别排列在发光器件封装上。当然,可以通过具有连接各发光器件的电路的电路层330a而将高输出发光器件封装安装在较小空间中。在图中,示出以直线排列的发光器件封装。也就是将通过各个发光器件提供的多个发光器件模块以直线排列。
在此,在本发明第一和第二实施方案中,金属PCB可在向电路层330和330a、电极层320和320a、绝缘层340和340a以及金属基底350和350a上表面开放的层的表面上具有反射材料或光泽涂层。利用反射材料或光泽涂层,所提供的多个发光器件360和360a所发射的光甚至在透镜部分310和310a的外侧的金属PCB上也具有高反射效率。
此外,在图中,圆形指示部分示例用作透镜部分310a的菲涅耳透镜,并且安装表面由金属基底350a以简单形式指出。
图7、8和9表示另一实施方案,其中在单一金属基底350a上的发光器件封装可分别以圆形、正方形和六边形排列。这些发光器件封装的排列可根据应用发光器件的特定用途而改变。
图10是以直线排列的根据本发明第二实施方案的发光器件封装的放大图。
参考图10,在电路层330a中,可见标示出绝缘层340a上的丝网层392a的各发光器件封装被供电,以使多个发光器件封装可同时通过串联连接电路通电。当然,也可以通过提供多个串联连接电路而向各绿色、红色和蓝色发光器件供电。
同时,当附加的散热器如本发明第一实施方案中所说明的那样额外提供在金属基底350a上时,金属基底350a的固定孔是用于通过散热器和螺栓型固定结构而接合的孔。
[发明模式]
根据本发明的发光器件封装提出用于发射高输出光的构造并主要集中在发光器件的排列结构上。为了实现前述目的,本发明可以不背离前述实施方案的各种实施方案实施,并且该实施方案可认为处于本发明的精神和范围之内。
[工业可行性]
根据本发明的发光器件封装,由于可以有效释放发光器件封装内部所产生的热,因此可以将尽可能高输出的发光器件以各种显示排列在封装内的受限空间中。因而,发光器件封装可以各种方式用于具有尺寸缩减趋势的发光器件应用中。
此外,根据本发明,可以降低生产成本并可以使生产过程最简化,这是因为以各模块构建的发光器件封装可通过没有辐射器的结构改进而集成安装。
此外,根据本发明,可以获得在热辐射、具有高集光性的光学、力学、产品可靠性等方面具有均一出色的特性的发光器件封装。

Claims (39)

1.发光器件封装,包括:
金属基底;
电路层,提供在金属基底的上侧以提供导电通路;
绝缘层,夹在金属基底和电路层之间;
发光器件,安装在金属基底上表面上的移除绝缘层的开放空间内;
电极层,提供在电路层上侧;和
连接部分,用于电连接电极层和发光器件。
2.权利要求1的发光器件封装,还包括用于模制开放空间内部的模制部分。
3.权利要求1的发光器件封装,还包括形成在金属基底底部表面上的散热器。
4.权利要求1的发光器件封装,还包括通过螺栓与金属基底接合的散热器。
5.权利要求1的发光器件封装,还包括与其中嵌入有导热材料的金属基底的一个表面接触的散热器。
6.权利要求1的发光器件封装,其中所述开放空间通过研磨来加工。
7.权利要求1的发光器件封装,其中所述开放空间通过刻蚀来加工。
8.权利要求1的发光器件封装,其中所述发光器件是一个或多个LED芯片,其选自红色LED芯片、绿色LED芯片、蓝色LED芯片、黄色LED芯片和橙色LED芯片。
9.权利要求1的发光器件封装,其中所述发光器件与金属基底接触。
10.权利要求1的发光器件封装,其中所述发光器件由一个或多个SiOB芯片组成。
11.权利要求1的发光器件封装,其中所述发光器件通过导热硬化剂与金属基底接合。
12.权利要求1的发光器件封装,其中所述发光器件提供在一个金属基底上的多个模块中,并且所述电路层串联连接各模块。
13.权利要求1的发光器件封装,其中所述发光器件提供在一个金属基底上的多个模块中,并且所述模块以直线、圆形或多边形排列。
14.权利要求1的发光器件封装,其中在所述电极层的上表面上提供镀层。
15.权利要求1的发光器件封装,其中所述电极层镀金。
16.权利要求1的发光器件封装,其中所述电极层的镀层厚度为0.3mm或更大。
17.权利要求1的发光器件封装,其中所述电路层和电极层形成的两层总厚度在200mm以内。
18.权利要求1的发光器件封装,其中所述电极层通过电镀方法形成。
19.权利要求1的发光器件封装,其中在所述金属基底上提供移除至预定深度的移除区域,并且将所述发光器件置于该移除区域中。
20.权利要求1的发光器件封装,其中安置发光器件处的金属基底区域具有比其他区域更小的厚度。
21.权利要求19的发光器件封装,其中所述移除区域的侧面倾斜预定角度。
22.权利要求19的发光器件封装,其中所述移除区域的内表面涂布有或提供有反射材料。
23.权利要求19的发光器件封装,其中所述移除区域形成为圆柱形状。
24.权利要求19的发光器件封装,其中所述移除区域通过研磨来加工。
25.权利要求1的发光器件封装,还包括:
丝网层,形成在电极层的上表面上;和
透镜部分,附着至丝网层。
26.权利要求25的发光器件封装,其中所述发光器件通过形成透镜部分的树脂来模制。
27.权利要求25的发光器件封装,其中模制透镜部分。
28.发光器件封装,包括:
金属基底;
电路层,提供在金属基底的上侧以提供导电通路;
发光器件,安装在金属基底上厚度小于第一区域的第二区域内;
绝缘层,夹在金属基底和电路层之间;
电极层,提供在电路层上侧;和
连接部分,用于电连接电极层和发光器件。
29.权利要求28的发光器件封装,其中第二区域的内侧通过树脂来模制。
30.权利要求28的发光器件封装,其中第二区域倾斜预定角度。
31.权利要求28的发光器件封装,其中第二区域的内表面通过光泽整理进行涂布。
32.权利要求28的发光器件封装,其中所述反射材料提供在第二区域的内表面上。
33.权利要求28的发光器件封装,其中第二区域形成为圆柱形状。
34.权利要求28的发光器件封装,其中第二区域通过加工原始金属基底而形成。
35.权利要求28的发光器件封装,其中第二区域通过研磨来加工。
36.权利要求28的发光器件封装,其中第二区域内部通过模制部分来填充。
37.权利要求28的发光器件封装,其中所述模制部分的上表面平坦。
38.权利要求28的发光器件封装,其中对应于安置发光器件区域的绝缘层被打开并形成开放空间。
39.权利要求38的发光器件封装,其中所述开放空间的侧面倾斜预定角度。
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