CN1877841A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1877841A CN1877841A CNA2005101071132A CN200510107113A CN1877841A CN 1877841 A CN1877841 A CN 1877841A CN A2005101071132 A CNA2005101071132 A CN A2005101071132A CN 200510107113 A CN200510107113 A CN 200510107113A CN 1877841 A CN1877841 A CN 1877841A
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- China
- Prior art keywords
- insulating film
- interlayer insulating
- film
- semiconductor device
- diffusion barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title abstract description 17
- 239000011229 interlayer Substances 0.000 claims abstract description 95
- 238000009792 diffusion process Methods 0.000 claims abstract description 64
- 239000001257 hydrogen Substances 0.000 claims abstract description 63
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 63
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000011810 insulating material Substances 0.000 claims abstract description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 26
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 24
- 238000011156 evaluation Methods 0.000 claims description 22
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 21
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 6
- 208000005156 Dehydration Diseases 0.000 claims 4
- 230000018044 dehydration Effects 0.000 claims 4
- 238000006297 dehydration reaction Methods 0.000 claims 4
- 238000010943 off-gassing Methods 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 150000002431 hydrogen Chemical class 0.000 description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 9
- 229910000457 iridium oxide Inorganic materials 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 238000003795 desorption Methods 0.000 description 5
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- 230000007423 decrease Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005169371 | 2005-06-09 | ||
JP2005169371A JP2006344783A (ja) | 2005-06-09 | 2005-06-09 | 半導体装置及びその製造方法 |
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Cited By (1)
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CN104637864A (zh) * | 2013-11-14 | 2015-05-20 | 中芯国际集成电路制造(上海)有限公司 | 提高数据保持能力的方法 |
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CN101322241A (zh) * | 2005-11-29 | 2008-12-10 | 富士通株式会社 | 半导体器件及其制造方法 |
JP4998461B2 (ja) * | 2006-03-30 | 2012-08-15 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5109391B2 (ja) * | 2007-02-08 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
WO2008114413A1 (ja) * | 2007-03-20 | 2008-09-25 | Fujitsu Microelectronics Limited | 半導体装置の製造方法 |
JP5215589B2 (ja) * | 2007-05-11 | 2013-06-19 | キヤノン株式会社 | 絶縁ゲート型トランジスタ及び表示装置 |
KR101432561B1 (ko) * | 2007-11-23 | 2014-08-22 | (주)소슬 | 박막 제조 방법 및 박막 제조 장치 |
US7993971B2 (en) * | 2007-12-28 | 2011-08-09 | Freescale Semiconductor, Inc. | Forming a 3-D semiconductor die structure with an intermetallic formation |
ATE487128T1 (de) * | 2008-06-26 | 2010-11-15 | Abb Technology Ltd | Testanordnung, verfahren zur herstellung eines testkörpers, verfahren zur bestimmung eines feuchtigkeitsgehalts bei der isolierung eines leistungstransformators beim trocknen desselben |
JP5423056B2 (ja) * | 2009-03-02 | 2014-02-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US20110079878A1 (en) * | 2009-10-07 | 2011-04-07 | Texas Instruments Incorporated | Ferroelectric capacitor encapsulated with a hydrogen barrier |
JP5585241B2 (ja) * | 2010-06-25 | 2014-09-10 | セイコーエプソン株式会社 | 焦電型検出器、焦電型検出装置及び電子機器 |
JP7027916B2 (ja) * | 2018-01-31 | 2022-03-02 | 富士通セミコンダクターメモリソリューション株式会社 | 半導体装置及びその製造方法 |
US11264571B2 (en) * | 2018-11-09 | 2022-03-01 | Samsung Display Co., Ltd. | Bake system and method of fabricating display device using the same |
CN115346915A (zh) * | 2021-05-14 | 2022-11-15 | 联华电子股份有限公司 | 半导体器件的制造方法 |
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JPWO2004095578A1 (ja) * | 2003-04-24 | 2006-07-13 | 富士通株式会社 | 半導体装置及びその製造方法 |
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-
2005
- 2005-06-09 JP JP2005169371A patent/JP2006344783A/ja active Pending
- 2005-09-19 US US11/229,075 patent/US7777262B2/en not_active Expired - Fee Related
- 2005-09-28 CN CN2008101490074A patent/CN101388358B/zh not_active Expired - Fee Related
- 2005-09-28 KR KR1020050090318A patent/KR100763983B1/ko active IP Right Grant
- 2005-09-28 CN CNB2005101071132A patent/CN100468742C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104637864A (zh) * | 2013-11-14 | 2015-05-20 | 中芯国际集成电路制造(上海)有限公司 | 提高数据保持能力的方法 |
CN104637864B (zh) * | 2013-11-14 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | 提高数据保持能力的方法 |
Also Published As
Publication number | Publication date |
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KR100763983B1 (ko) | 2007-10-08 |
US7777262B2 (en) | 2010-08-17 |
US20060278954A1 (en) | 2006-12-14 |
KR20060128603A (ko) | 2006-12-14 |
CN100468742C (zh) | 2009-03-11 |
CN101388358B (zh) | 2010-12-08 |
JP2006344783A (ja) | 2006-12-21 |
CN101388358A (zh) | 2009-03-18 |
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