CN1873966A - 一种改进的半导体芯片封装的引线框架结构 - Google Patents

一种改进的半导体芯片封装的引线框架结构 Download PDF

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CN1873966A
CN1873966A CNA2006100274577A CN200610027457A CN1873966A CN 1873966 A CN1873966 A CN 1873966A CN A2006100274577 A CNA2006100274577 A CN A2006100274577A CN 200610027457 A CN200610027457 A CN 200610027457A CN 1873966 A CN1873966 A CN 1873966A
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lead frame
chip
slide holder
lead wire
block
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施震宇
曾小光
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KUIHE PRECISION ELECTRONIC (SHANGHAI) CO Ltd
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KUIHE PRECISION ELECTRONIC (SHANGHAI) CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

本发明公开了一种改进的半导体芯片封装的引线框架结构，至少包括作为芯片载体的引线框架、金线，其中所述的引线框架包括载片台和引线框架配线单元，所述引线框架配线单元通过打弯或剪切的方式向载片台方向弯沉，来减小载片台的贴片区域和引线配线单元之间的落差。这种改进的结构不仅实现简单方便，而且能够达到满意的效果，有效减小了金线的落差，增强了金线的抗冲击性，并有效降低了封装成本。

Description

一种改进的半导体芯片封装的引线框架结构
技术领域
本发明涉及一种半导体封装的引线框架结构，尤其涉及一种改进的半导体芯片封装的引线框架结构，属于半导体分立器件技术领域。
背景技术
在现有的半导体封装的数十种常用封装技术中，比较常用的是采用金属(铜、镍)引线框架的方案，如DIP、SOP、TSOP、QFP、PLC、DPAK和TO系列等，图1(a)是现有技术的半导体芯片引线框架装配结构示意图，此类方案，以金属引线框架为芯片载体，具体的，芯片放置在载片台1上，芯片2通过金线3与引线框架配线区域4相连并向外引出，用塑封材料将其密封。
在现有技术普遍的设计中，特别是TO系列如TO220/TO251/TO252产品的引线框架设计中，引线框架配线区域4与载片台1区域有一较大落差，如图1(b)所示。对于上述封装形式，由于半导体芯片厚度普遍较小，造成配线落差较大。这导致两个问题：一是配线落差大，导致配线弧度较大，在随后的塑封工序中容易被塑封冲弯，容易导致短路；二是落差过大，致使所用的金线较长，使得材料浪费，在大批量生产的情况下会造成封装成本的提高。
发明内容
本发明的目的是针对现有技术的不足，提出一种改进的引线框架配线区域的结构，通过将引线配线区域向载片台方向弯折下沉，降低配线的落差，这种改进的结构在维持了产品成品原有的外形尺寸的基础上，不仅实现简单方便，而且能够达到满意的效果，有效减小了金线的落差，增强了金线的抗冲击性，并有效降低了成本。
为实现上述目的，本发明提供了一种半导体芯片封装结构，至少包括作为芯片载体的引线框架、金线，其中所述的引线框架包括载片台和引线框架配线单元，所述引线配线单元向或/和所述载片台通过弯折来减小两者之间的落差。
较佳地，所述引线配线单元以打弯方式向载片台方向弯沉。
较佳地，所述引线配线单元以剪切方式向载片台方向弯沉。
本发明与现有技术相比，其优点在于：通过将引线配线单元打弯下沉，有效的减小了两者的落差，进而减小了连接两者的金线的落差，增强了金线的抗冲击性，同时也节约了金线用量、减少了产品成本。
附图说明
图1(a)是现有技术的半导体芯片引线框架装配结构示意图；
图1(b)是图1(a)所示装配结构示意图的侧视图；
图2(a)是本发明的一个实施例的示意图，其中引线框架配线单元以打弯方式向载片台弯沉；
图2(b)是本发明的另一个实施例的示意图，其中引线框架配线单元以剪切方式向载片台弯沉。
具体实施方式
以下将结合附图对本发明的构思、具体结构及产生的技术效果作进一步说明，以充分地了解本发明。
图2(a)是本发明一种改进的半导体芯片封装的引线框架结构的一个实施例，其中，改进的半导体芯片引线框架配线单元弯沉的示意图；如图2(a)所示，将引线框架的配线单元4向载片台1(Pad)方向打弯下沉，使金线3的落差大幅度降低，从而使得金线3配线的弧度降低。这样不仅有效有效节约了金线，同时由于其线长缩短，使得金线的抗冲击能力也得到了加强，使其在塑封灌胶时不易弯曲，避免了短路的现象。特别的，还可以通过减小金线线径来降低封装成本。
图2(b)所示是本发明改进的引线框架配线单元弯沉的又一实施例，其引线框架配线单元4以剪切方式向载片台1方向弯沉。其同样达到前述优点。所述剪切方式是，配线单元需要弯沉的两个部位是分别沿垂直方向反方向错位拉伸，以形成剪切式的错位弯沉；较佳地是错位拉伸半个配线单元的材料厚度。
另外需要说明的是，本发明所述的引线框架结构同样适用于DIP、TSOP、QFP、PLC等以金属引线框架为芯片载体，芯片通过金线与引线框架配线区域相连并向外引出，用塑封材料将其密封的封装形式。
最后所应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的精神和范围，其均应涵盖在本发明的权利要求范围之中。

Claims (3)

1.一种改进的半导体芯片封装的引线框架结构，至少包括作为芯片载体的引线框架，其中所述的引线框架包括载片台和引线框架配线单元，其特征在于，所述引线框架配线单元向所述载片台弯沉，从而减小两者之间的落差。
2.根据权利要求1所述的半导体芯片封装的引线框架结构，其特征在于，所述引线框架配线单元以打弯方式向载片台方向弯沉。
3.根据权利要求1所述的半导体芯片封装的引线框架结构，其特征在于，所述引线框架配线单元以剪切方式向载片台方向弯沉。
CNA2006100274577A 2006-06-08 2006-06-08 一种改进的半导体芯片封装的引线框架结构 Pending CN1873966A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102515082A (zh) * 2011-12-31 2012-06-27 天水华天科技股份有限公司 一种单载体mems器件封装件及其生产方法
CN103000606A (zh) * 2012-12-03 2013-03-27 无锡红光微电子有限公司 To-252-3lb引线框架结构
CN103617985A (zh) * 2013-11-08 2014-03-05 张轩 一种头部弯曲的塑封引线框架

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102515082A (zh) * 2011-12-31 2012-06-27 天水华天科技股份有限公司 一种单载体mems器件封装件及其生产方法
CN103000606A (zh) * 2012-12-03 2013-03-27 无锡红光微电子有限公司 To-252-3lb引线框架结构
CN103617985A (zh) * 2013-11-08 2014-03-05 张轩 一种头部弯曲的塑封引线框架

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