CN1866564A - 形成欧姆接触层的方法和制造具有其的发光器件的方法 - Google Patents
形成欧姆接触层的方法和制造具有其的发光器件的方法 Download PDFInfo
- Publication number
- CN1866564A CN1866564A CNA2006100848213A CN200610084821A CN1866564A CN 1866564 A CN1866564 A CN 1866564A CN A2006100848213 A CNA2006100848213 A CN A2006100848213A CN 200610084821 A CN200610084821 A CN 200610084821A CN 1866564 A CN1866564 A CN 1866564A
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 82
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 150000004767 nitrides Chemical class 0.000 claims abstract description 21
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 43
- 238000000576 coating method Methods 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052790 beryllium Inorganic materials 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 238000001093 holography Methods 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 10
- 229910052703 rhodium Inorganic materials 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000006104 solid solution Substances 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000000609 electron-beam lithography Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- RHKZVMUBMXGOLL-UHFFFAOYSA-N cyclopentolate hydrochloride Chemical compound Cl.C1CCCC1(O)C(C(=O)OCCN(C)C)C1=CC=CC=C1 RHKZVMUBMXGOLL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 239000003570 air Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000005401 electroluminescence Methods 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium nitride (GaN) compound Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050041771A KR100878433B1 (ko) | 2005-05-18 | 2005-05-18 | 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법 |
KR41771/05 | 2005-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1866564A true CN1866564A (zh) | 2006-11-22 |
CN100539216C CN100539216C (zh) | 2009-09-09 |
Family
ID=37425513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100848213A Active CN100539216C (zh) | 2005-05-18 | 2006-05-18 | 形成欧姆接触层的方法和制造具有其的发光器件的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8580668B2 (zh) |
JP (1) | JP4970843B2 (zh) |
KR (1) | KR100878433B1 (zh) |
CN (1) | CN100539216C (zh) |
Cited By (7)
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CN101908593A (zh) * | 2010-07-15 | 2010-12-08 | 山东华光光电子有限公司 | GaN基LED图形化透明导电薄膜的制作方法 |
CN102349155A (zh) * | 2009-01-26 | 2012-02-08 | 普瑞光电股份有限公司 | 在发光半导体元件上提供一图案化光学透明或半透明导电层的方法及装置 |
CN102349167A (zh) * | 2009-01-09 | 2012-02-08 | 同和电子科技有限公司 | 氮化物半导体发光器件及其制造方法 |
CN105720151A (zh) * | 2016-02-15 | 2016-06-29 | 中国科学院半导体研究所 | 一种光色可调发光二极管及其制备方法 |
CN109860346A (zh) * | 2019-01-21 | 2019-06-07 | 五邑大学 | 一种改善电极界面接触性能的方法 |
WO2019127849A1 (zh) * | 2017-12-28 | 2019-07-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
CN111223918A (zh) * | 2018-11-23 | 2020-06-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | P型半导体低阻欧姆接触结构及其制备方法 |
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JP2007123517A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP4954549B2 (ja) * | 2005-12-29 | 2012-06-20 | ローム株式会社 | 半導体発光素子およびその製法 |
US8053789B2 (en) | 2006-12-28 | 2011-11-08 | Seoul Opto Device Co., Ltd. | Light emitting device and fabrication method thereof |
US20080242118A1 (en) * | 2007-03-29 | 2008-10-02 | International Business Machines Corporation | Methods for forming dense dielectric layer over porous dielectrics |
TWI366291B (en) | 2007-03-30 | 2012-06-11 | Epistar Corp | Semiconductor light-emitting device having stacked transparent electrodes |
US9064845B2 (en) | 2007-06-25 | 2015-06-23 | Sensor Electronic Technology, Inc. | Methods of fabricating a chromium/titanium/aluminum-based semiconductor device contact |
US9514947B2 (en) | 2007-06-25 | 2016-12-06 | Sensor Electronic Technology, Inc. | Chromium/titanium/aluminum-based semiconductor device contact fabrication |
US8766448B2 (en) * | 2007-06-25 | 2014-07-01 | Sensor Electronic Technology, Inc. | Chromium/Titanium/Aluminum-based semiconductor device contact |
KR100881140B1 (ko) * | 2007-08-09 | 2009-02-02 | 삼성전기주식회사 | 나노패턴 형성장치 및 이를 이용한 나노패턴 형성방법 |
DE102008003182A1 (de) * | 2008-01-04 | 2009-07-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP5047013B2 (ja) | 2008-03-12 | 2012-10-10 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
DE102008028886B4 (de) * | 2008-06-18 | 2024-02-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements |
KR100999694B1 (ko) | 2008-09-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자 |
KR20100055750A (ko) * | 2008-11-18 | 2010-05-27 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101081166B1 (ko) | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US8796718B2 (en) | 2009-09-30 | 2014-08-05 | Kyocera Corporation | Light emitting element and method for manufacturing light emitting element |
JP5375497B2 (ja) * | 2009-10-01 | 2013-12-25 | トヨタ自動車株式会社 | 半導体装置、及び、半導体装置の製造方法 |
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KR100999771B1 (ko) * | 2010-02-25 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
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KR101125254B1 (ko) * | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법과, 그를 이용한 액정 패널 및 그 제조 방법 |
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-
2005
- 2005-05-18 KR KR1020050041771A patent/KR100878433B1/ko active IP Right Grant
-
2006
- 2006-05-11 JP JP2006133055A patent/JP4970843B2/ja active Active
- 2006-05-18 US US11/435,827 patent/US8580668B2/en active Active
- 2006-05-18 CN CNB2006100848213A patent/CN100539216C/zh active Active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102349167A (zh) * | 2009-01-09 | 2012-02-08 | 同和电子科技有限公司 | 氮化物半导体发光器件及其制造方法 |
CN102349167B (zh) * | 2009-01-09 | 2013-09-04 | 同和电子科技有限公司 | 氮化物半导体发光器件及其制造方法 |
CN102349155A (zh) * | 2009-01-26 | 2012-02-08 | 普瑞光电股份有限公司 | 在发光半导体元件上提供一图案化光学透明或半透明导电层的方法及装置 |
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CN105720151A (zh) * | 2016-02-15 | 2016-06-29 | 中国科学院半导体研究所 | 一种光色可调发光二极管及其制备方法 |
WO2019127849A1 (zh) * | 2017-12-28 | 2019-07-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
CN109979802A (zh) * | 2017-12-28 | 2019-07-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
CN111223918A (zh) * | 2018-11-23 | 2020-06-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | P型半导体低阻欧姆接触结构及其制备方法 |
CN111223918B (zh) * | 2018-11-23 | 2023-12-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | P型半导体低阻欧姆接触结构及其制备方法 |
CN109860346A (zh) * | 2019-01-21 | 2019-06-07 | 五邑大学 | 一种改善电极界面接触性能的方法 |
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KR100878433B1 (ko) | 2009-01-13 |
JP4970843B2 (ja) | 2012-07-11 |
CN100539216C (zh) | 2009-09-09 |
US20060270206A1 (en) | 2006-11-30 |
US8580668B2 (en) | 2013-11-12 |
JP2006324661A (ja) | 2006-11-30 |
KR20060119159A (ko) | 2006-11-24 |
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