CN1864262A - 电可编程反熔丝和由它构成的电路 - Google Patents
电可编程反熔丝和由它构成的电路 Download PDFInfo
- Publication number
- CN1864262A CN1864262A CNA2004800292536A CN200480029253A CN1864262A CN 1864262 A CN1864262 A CN 1864262A CN A2004800292536 A CNA2004800292536 A CN A2004800292536A CN 200480029253 A CN200480029253 A CN 200480029253A CN 1864262 A CN1864262 A CN 1864262A
- Authority
- CN
- China
- Prior art keywords
- antifuse
- antifuse device
- voltage
- conduction
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/605,523 | 2003-10-06 | ||
US10/605,523 US6879021B1 (en) | 2003-10-06 | 2003-10-06 | Electronically programmable antifuse and circuits made therewith |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1864262A true CN1864262A (zh) | 2006-11-15 |
CN100433335C CN100433335C (zh) | 2008-11-12 |
Family
ID=34393295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800292536A Expired - Fee Related CN100433335C (zh) | 2003-10-06 | 2004-10-04 | 电可编程反熔丝和由它构成的电路 |
Country Status (6)
Country | Link |
---|---|
US (3) | US6879021B1 (zh) |
EP (1) | EP1678764A4 (zh) |
JP (1) | JP5201650B2 (zh) |
KR (1) | KR100992023B1 (zh) |
CN (1) | CN100433335C (zh) |
WO (1) | WO2005038869A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101226219B (zh) * | 2007-01-15 | 2011-07-13 | 国际商业机器公司 | 集成电路中的电压检测电路以及产生触发标志信号的方法 |
CN104009033A (zh) * | 2013-02-26 | 2014-08-27 | 精工电子有限公司 | 熔断器电路和半导体集成电路装置 |
CN104064220A (zh) * | 2013-03-07 | 2014-09-24 | 英特尔公司 | 随机熔丝感测 |
CN107301877A (zh) * | 2016-04-14 | 2017-10-27 | 意法半导体有限公司 | 可配置的rom |
CN109755216A (zh) * | 2017-11-02 | 2019-05-14 | 南亚科技股份有限公司 | 反熔丝结构 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6879021B1 (en) | 2003-10-06 | 2005-04-12 | International Business Machines Corporation | Electronically programmable antifuse and circuits made therewith |
US7057258B2 (en) * | 2003-10-29 | 2006-06-06 | Hewlett-Packard Development Company, L.P. | Resistive memory device and method for making the same |
US7485944B2 (en) * | 2004-10-21 | 2009-02-03 | International Business Machines Corporation | Programmable electronic fuse |
US7323761B2 (en) * | 2004-11-12 | 2008-01-29 | International Business Machines Corporation | Antifuse structure having an integrated heating element |
US20060170487A1 (en) * | 2005-01-31 | 2006-08-03 | International Business Machines Corporation | A voltage reference circuit for ultra-thin oxide technology and low voltage applications |
US7254078B1 (en) | 2006-02-22 | 2007-08-07 | International Business Machines Corporation | System and method for increasing reliability of electrical fuse programming |
US7510960B2 (en) * | 2006-08-29 | 2009-03-31 | International Business Machines Corporation | Bridge for semiconductor internal node |
US8754446B2 (en) * | 2006-08-30 | 2014-06-17 | International Business Machines Corporation | Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material |
US7956628B2 (en) * | 2006-11-03 | 2011-06-07 | International Business Machines Corporation | Chip-based prober for high frequency measurements and methods of measuring |
US7723820B2 (en) * | 2006-12-28 | 2010-05-25 | International Business Machines Corporation | Transistor based antifuse with integrated heating element |
US7683416B2 (en) * | 2007-01-18 | 2010-03-23 | International Business Machines Corporation | Post STI trench capacitor |
US7682922B2 (en) * | 2007-01-18 | 2010-03-23 | International Business Machines Corporation | Post STI trench capacitor |
KR100845407B1 (ko) * | 2007-02-16 | 2008-07-10 | 매그나칩 반도체 유한회사 | 원-타임-프로그래머블 셀 및 이를 구비하는 otp 메모리 |
US20080218247A1 (en) * | 2007-03-07 | 2008-09-11 | International Business Machines Corporation | Method for automatically adjusting electrical fuse programming voltage |
US7674691B2 (en) * | 2007-03-07 | 2010-03-09 | International Business Machines Corporation | Method of manufacturing an electrical antifuse |
US7851885B2 (en) * | 2007-03-07 | 2010-12-14 | International Business Machines Corporation | Methods and systems involving electrically programmable fuses |
US7732893B2 (en) * | 2007-03-07 | 2010-06-08 | International Business Machines Corporation | Electrical fuse structure for higher post-programming resistance |
US7714326B2 (en) * | 2007-03-07 | 2010-05-11 | International Business Machines Corporation | Electrical antifuse with integrated sensor |
JP2009016568A (ja) * | 2007-07-04 | 2009-01-22 | Toshiba Corp | 半導体集積回路装置 |
US20090121357A1 (en) * | 2007-11-08 | 2009-05-14 | International Business Machines Corporation | Design structure for bridge of a seminconductor internal node |
JP2009206490A (ja) * | 2008-01-30 | 2009-09-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8816753B2 (en) | 2011-03-28 | 2014-08-26 | System General Corp. | Trim circuit for power supply controller |
FR2993389B1 (fr) * | 2012-07-10 | 2015-02-27 | Soitec Silicon On Insulator | Antifusible |
US9871390B2 (en) * | 2014-09-02 | 2018-01-16 | Silergy Corp. | Battery protection integrated circuit applied to battery charging/discharging system and method for determining resistances of voltage divider of battery protection integrated circuit |
CN112750835B (zh) * | 2019-10-29 | 2022-06-21 | 长鑫存储技术有限公司 | 反熔丝结构及其制作方法 |
US20230267982A1 (en) * | 2022-02-24 | 2023-08-24 | Everspin Technologies, Inc. | Low resistance mtj antifuse circuitry designs and methods of operation |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5163180A (en) * | 1991-01-18 | 1992-11-10 | Actel Corporation | Low voltage programming antifuse and transistor breakdown method for making same |
US5148391A (en) * | 1992-02-14 | 1992-09-15 | Micron Technology, Inc. | Nonvolatile, zero-power memory cell constructed with capacitor-like antifuses operable at less than power supply voltage |
US5345110A (en) * | 1993-04-13 | 1994-09-06 | Micron Semiconductor, Inc. | Low-power fuse detect and latch circuit |
US5831325A (en) * | 1996-08-16 | 1998-11-03 | Zhang; Guobiao | Antifuse structures with improved manufacturability |
US5835396A (en) * | 1996-10-17 | 1998-11-10 | Zhang; Guobiao | Three-dimensional read-only memory |
US6020777A (en) * | 1997-09-26 | 2000-02-01 | International Business Machines Corporation | Electrically programmable anti-fuse circuit |
JP2000200498A (ja) * | 1999-01-05 | 2000-07-18 | Mitsubishi Electric Corp | 半導体装置 |
US6389578B1 (en) | 1999-05-26 | 2002-05-14 | Hewlett-Packard Company | Method and apparatus for determining the strengths and weaknesses of paths in an integrated circuit |
US6251710B1 (en) * | 2000-04-27 | 2001-06-26 | International Business Machines Corporation | Method of making a dual damascene anti-fuse with via before wire |
US6960819B2 (en) * | 2000-12-20 | 2005-11-01 | Broadcom Corporation | System and method for one-time programmed memory through direct-tunneling oxide breakdown |
US6570805B2 (en) * | 2000-12-20 | 2003-05-27 | Actel Corporation | Antifuse memory cell and antifuse memory cell array |
US6674667B2 (en) * | 2001-02-13 | 2004-01-06 | Micron Technology, Inc. | Programmable fuse and antifuse and method therefor |
US6426668B1 (en) * | 2001-03-22 | 2002-07-30 | International Business Machines Corporation | Imbalanced sense amplifier fuse detection circuit |
US6384666B1 (en) * | 2001-03-23 | 2002-05-07 | International Business Machines Corporation | Antifuse latch device with controlled current programming and variable trip point |
US6580144B2 (en) * | 2001-09-28 | 2003-06-17 | Hewlett-Packard Development Company, L.P. | One time programmable fuse/anti-fuse combination based memory cell |
JP2003115537A (ja) * | 2001-10-04 | 2003-04-18 | Toshiba Corp | アンチヒューズ素子、半導体装置及び半導体装置のプログラミング方法 |
KR100448703B1 (ko) * | 2001-10-24 | 2004-09-16 | 삼성전자주식회사 | 메이크 링크 퓨즈를 구비한 회로 및 이를 이용한 반도체장치 |
CN1209807C (zh) * | 2001-11-30 | 2005-07-06 | 联华电子股份有限公司 | 反熔丝的制造方法 |
JP2003258102A (ja) * | 2002-03-05 | 2003-09-12 | Toshiba Corp | 半導体集積回路装置 |
US6753590B2 (en) * | 2002-07-08 | 2004-06-22 | International Business Machines Corporation | High impedance antifuse |
US6879021B1 (en) | 2003-10-06 | 2005-04-12 | International Business Machines Corporation | Electronically programmable antifuse and circuits made therewith |
-
2003
- 2003-10-06 US US10/605,523 patent/US6879021B1/en not_active Expired - Fee Related
-
2004
- 2004-10-04 JP JP2006534212A patent/JP5201650B2/ja not_active Expired - Fee Related
- 2004-10-04 CN CNB2004800292536A patent/CN100433335C/zh not_active Expired - Fee Related
- 2004-10-04 KR KR1020067006411A patent/KR100992023B1/ko not_active IP Right Cessation
- 2004-10-04 EP EP04817244A patent/EP1678764A4/en not_active Withdrawn
- 2004-10-04 WO PCT/US2004/032581 patent/WO2005038869A2/en active Application Filing
-
2005
- 2005-02-04 US US11/051,703 patent/US7215002B2/en not_active Expired - Fee Related
-
2007
- 2007-01-26 US US11/627,723 patent/US7687883B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101226219B (zh) * | 2007-01-15 | 2011-07-13 | 国际商业机器公司 | 集成电路中的电压检测电路以及产生触发标志信号的方法 |
CN104009033A (zh) * | 2013-02-26 | 2014-08-27 | 精工电子有限公司 | 熔断器电路和半导体集成电路装置 |
CN104009033B (zh) * | 2013-02-26 | 2019-03-22 | 艾普凌科有限公司 | 半导体集成电路装置 |
CN104064220A (zh) * | 2013-03-07 | 2014-09-24 | 英特尔公司 | 随机熔丝感测 |
US9922720B2 (en) | 2013-03-07 | 2018-03-20 | Intel Corporation | Random fuse sensing |
CN104064220B (zh) * | 2013-03-07 | 2018-09-11 | 英特尔公司 | 随机熔丝感测 |
CN107301877A (zh) * | 2016-04-14 | 2017-10-27 | 意法半导体有限公司 | 可配置的rom |
CN109755216A (zh) * | 2017-11-02 | 2019-05-14 | 南亚科技股份有限公司 | 反熔丝结构 |
US10720389B2 (en) | 2017-11-02 | 2020-07-21 | Nanya Technology Corporation | Anti-fuse structure |
Also Published As
Publication number | Publication date |
---|---|
US7687883B2 (en) | 2010-03-30 |
KR100992023B1 (ko) | 2010-11-05 |
KR20060132564A (ko) | 2006-12-21 |
US20050073023A1 (en) | 2005-04-07 |
JP5201650B2 (ja) | 2013-06-05 |
WO2005038869A2 (en) | 2005-04-28 |
EP1678764A4 (en) | 2011-03-02 |
US20050133884A1 (en) | 2005-06-23 |
WO2005038869A3 (en) | 2006-02-09 |
US6879021B1 (en) | 2005-04-12 |
US20070120221A1 (en) | 2007-05-31 |
US7215002B2 (en) | 2007-05-08 |
EP1678764A2 (en) | 2006-07-12 |
CN100433335C (zh) | 2008-11-12 |
JP2007507907A (ja) | 2007-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171113 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171113 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081112 Termination date: 20181004 |
|
CF01 | Termination of patent right due to non-payment of annual fee |