CN1837956B - 灰色调掩模和薄膜晶体管基板的制造方法 - Google Patents

灰色调掩模和薄膜晶体管基板的制造方法 Download PDF

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Publication number
CN1837956B
CN1837956B CN2006100654561A CN200610065456A CN1837956B CN 1837956 B CN1837956 B CN 1837956B CN 2006100654561 A CN2006100654561 A CN 2006100654561A CN 200610065456 A CN200610065456 A CN 200610065456A CN 1837956 B CN1837956 B CN 1837956B
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China
Prior art keywords
pattern
semi
mask
resist
mentioned
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CN2006100654561A
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CN1837956A (zh
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佐野道明
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN2006100654561A 2005-03-22 2006-03-22 灰色调掩模和薄膜晶体管基板的制造方法 Expired - Fee Related CN1837956B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005-082500 2005-03-22
JP2005082500A JP4693451B2 (ja) 2005-03-22 2005-03-22 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP2005082500 2005-03-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201010189553A Division CN101833236A (zh) 2005-03-22 2006-03-22 灰色调掩模

Publications (2)

Publication Number Publication Date
CN1837956A CN1837956A (zh) 2006-09-27
CN1837956B true CN1837956B (zh) 2010-10-20

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Family Applications (2)

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CN2006100654561A Expired - Fee Related CN1837956B (zh) 2005-03-22 2006-03-22 灰色调掩模和薄膜晶体管基板的制造方法
CN201010189553A Pending CN101833236A (zh) 2005-03-22 2006-03-22 灰色调掩模

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CN201010189553A Pending CN101833236A (zh) 2005-03-22 2006-03-22 灰色调掩模

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JP (1) JP4693451B2 (enrdf_load_stackoverflow)
KR (1) KR101016464B1 (enrdf_load_stackoverflow)
CN (2) CN1837956B (enrdf_load_stackoverflow)
TW (1) TW200702935A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4809752B2 (ja) * 2006-11-01 2011-11-09 株式会社エスケーエレクトロニクス 中間調フォトマスク及びその製造方法
JP5044262B2 (ja) * 2007-04-10 2012-10-10 株式会社エスケーエレクトロニクス 多階調フォトマスク及びその製造方法
JP5089362B2 (ja) * 2007-12-13 2012-12-05 信越化学工業株式会社 フォトマスクおよび露光方法
KR101295235B1 (ko) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법
US8512918B2 (en) * 2009-03-26 2013-08-20 Hoya Corporation Multilayer reflective film coated substrate for a reflective mask, reflective mask blank, and methods of manufacturing the same
JP5306391B2 (ja) * 2011-03-02 2013-10-02 株式会社東芝 フォトマスク
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
CN104718496B (zh) * 2012-12-27 2019-06-28 爱发科成膜株式会社 相移掩膜的制造方法
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
JP7314523B2 (ja) * 2019-02-14 2023-07-26 大日本印刷株式会社 レーザ露光用フォトマスク及びフォトマスクブランクス
US20220390833A1 (en) * 2021-06-03 2022-12-08 Viavi Solutions Inc. Method of replicating a microstructure pattern
US12353128B2 (en) 2021-06-03 2025-07-08 Viavi Solutions Inc. Method of replicating a microstructure pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1442884A (zh) * 2002-03-01 2003-09-17 株式会社日立制作所 电子装置的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0149221B1 (ko) * 1994-06-27 1999-02-01 김주용 반도체 제조용 포토 마스크
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP2002189282A (ja) * 2000-12-21 2002-07-05 Hitachi Ltd ハーフトーン位相シフトマスクおよびそれを用いた半導体装置の製造方法
JP4410951B2 (ja) * 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 パターン形成方法および液晶表示装置の製造方法
KR100390801B1 (ko) * 2001-05-24 2003-07-12 엘지.필립스 엘시디 주식회사 포토 반투과 마스크 제조방법
JP2004341139A (ja) * 2003-05-14 2004-12-02 Canon Inc グレートーンマスク及びその製造方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP4108662B2 (ja) * 2004-10-04 2008-06-25 Ｎｅｃ液晶テクノロジー株式会社 薄膜半導体装置の製造方法、レジストパターン形成方法及びこれらの方法に使用するフォトマスク

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1442884A (zh) * 2002-03-01 2003-09-17 株式会社日立制作所 电子装置的制造方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JP特开2002-261078A 2002.09.13
JP特开平11-327121A 1999.11.26
JP特开平9-179287A 1997.07.11
JP特开平9-43830A 1997.02.14

Also Published As

Publication number Publication date
JP2006267262A (ja) 2006-10-05
JP4693451B2 (ja) 2011-06-01
KR20060102524A (ko) 2006-09-27
TW200702935A (en) 2007-01-16
CN101833236A (zh) 2010-09-15
KR101016464B1 (ko) 2011-02-24
CN1837956A (zh) 2006-09-27

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