KR101016464B1 - 그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법 - Google Patents

그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법 Download PDF

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Publication number
KR101016464B1
KR101016464B1 KR1020060026088A KR20060026088A KR101016464B1 KR 101016464 B1 KR101016464 B1 KR 101016464B1 KR 1020060026088 A KR1020060026088 A KR 1020060026088A KR 20060026088 A KR20060026088 A KR 20060026088A KR 101016464 B1 KR101016464 B1 KR 101016464B1
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KR
South Korea
Prior art keywords
pattern
film
mask
gray tone
mark
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Expired - Fee Related
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KR1020060026088A
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English (en)
Korean (ko)
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KR20060102524A (ko
Inventor
미치아키 사노
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020060026088A 2005-03-22 2006-03-22 그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법 Expired - Fee Related KR101016464B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00082500 2005-03-22
JP2005082500A JP4693451B2 (ja) 2005-03-22 2005-03-22 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法

Publications (2)

Publication Number Publication Date
KR20060102524A KR20060102524A (ko) 2006-09-27
KR101016464B1 true KR101016464B1 (ko) 2011-02-24

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ID=37015388

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KR1020060026088A Expired - Fee Related KR101016464B1 (ko) 2005-03-22 2006-03-22 그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법

Country Status (4)

Country Link
JP (1) JP4693451B2 (enrdf_load_stackoverflow)
KR (1) KR101016464B1 (enrdf_load_stackoverflow)
CN (2) CN1837956B (enrdf_load_stackoverflow)
TW (1) TW200702935A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4809752B2 (ja) * 2006-11-01 2011-11-09 株式会社エスケーエレクトロニクス 中間調フォトマスク及びその製造方法
JP5044262B2 (ja) * 2007-04-10 2012-10-10 株式会社エスケーエレクトロニクス 多階調フォトマスク及びその製造方法
JP5089362B2 (ja) * 2007-12-13 2012-12-05 信越化学工業株式会社 フォトマスクおよび露光方法
KR101295235B1 (ko) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법
US8512918B2 (en) * 2009-03-26 2013-08-20 Hoya Corporation Multilayer reflective film coated substrate for a reflective mask, reflective mask blank, and methods of manufacturing the same
JP5306391B2 (ja) * 2011-03-02 2013-10-02 株式会社東芝 フォトマスク
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
CN104718496B (zh) * 2012-12-27 2019-06-28 爱发科成膜株式会社 相移掩膜的制造方法
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
JP7314523B2 (ja) * 2019-02-14 2023-07-26 大日本印刷株式会社 レーザ露光用フォトマスク及びフォトマスクブランクス
US20220390833A1 (en) * 2021-06-03 2022-12-08 Viavi Solutions Inc. Method of replicating a microstructure pattern
US12353128B2 (en) 2021-06-03 2025-07-08 Viavi Solutions Inc. Method of replicating a microstructure pattern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0149221B1 (ko) * 1994-06-27 1999-02-01 김주용 반도체 제조용 포토 마스크
JP2002189282A (ja) * 2000-12-21 2002-07-05 Hitachi Ltd ハーフトーン位相シフトマスクおよびそれを用いた半導体装置の製造方法
KR100390801B1 (ko) * 2001-05-24 2003-07-12 엘지.필립스 엘시디 주식회사 포토 반투과 마스크 제조방법
KR20050002661A (ko) * 2003-06-30 2005-01-10 호야 가부시키가이샤 그레이 톤 마스크의 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP4410951B2 (ja) * 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 パターン形成方法および液晶表示装置の製造方法
JP2003255510A (ja) * 2002-03-01 2003-09-10 Hitachi Ltd 電子装置の製造方法
JP2004341139A (ja) * 2003-05-14 2004-12-02 Canon Inc グレートーンマスク及びその製造方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4108662B2 (ja) * 2004-10-04 2008-06-25 Ｎｅｃ液晶テクノロジー株式会社 薄膜半導体装置の製造方法、レジストパターン形成方法及びこれらの方法に使用するフォトマスク

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0149221B1 (ko) * 1994-06-27 1999-02-01 김주용 반도체 제조용 포토 마스크
JP2002189282A (ja) * 2000-12-21 2002-07-05 Hitachi Ltd ハーフトーン位相シフトマスクおよびそれを用いた半導体装置の製造方法
KR100390801B1 (ko) * 2001-05-24 2003-07-12 엘지.필립스 엘시디 주식회사 포토 반투과 마스크 제조방법
KR20050002661A (ko) * 2003-06-30 2005-01-10 호야 가부시키가이샤 그레이 톤 마스크의 제조 방법

Also Published As

Publication number Publication date
JP2006267262A (ja) 2006-10-05
JP4693451B2 (ja) 2011-06-01
CN1837956B (zh) 2010-10-20
KR20060102524A (ko) 2006-09-27
TW200702935A (en) 2007-01-16
CN101833236A (zh) 2010-09-15
CN1837956A (zh) 2006-09-27

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