TW200702935A - Methods for manufacturing gray level mask and thin film transistor substrate - Google Patents

Methods for manufacturing gray level mask and thin film transistor substrate

Info

Publication number
TW200702935A
TW200702935A TW095109428A TW95109428A TW200702935A TW 200702935 A TW200702935 A TW 200702935A TW 095109428 A TW095109428 A TW 095109428A TW 95109428 A TW95109428 A TW 95109428A TW 200702935 A TW200702935 A TW 200702935A
Authority
TW
Taiwan
Prior art keywords
gray level
device pattern
pattern
level mask
mask
Prior art date
Application number
TW095109428A
Other languages
English (en)
Chinese (zh)
Inventor
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200702935A publication Critical patent/TW200702935A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW095109428A 2005-03-22 2006-03-20 Methods for manufacturing gray level mask and thin film transistor substrate TW200702935A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005082500A JP4693451B2 (ja) 2005-03-22 2005-03-22 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法

Publications (1)

Publication Number Publication Date
TW200702935A true TW200702935A (en) 2007-01-16

Family

ID=37015388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109428A TW200702935A (en) 2005-03-22 2006-03-20 Methods for manufacturing gray level mask and thin film transistor substrate

Country Status (4)

Country Link
JP (1) JP4693451B2 (enrdf_load_stackoverflow)
KR (1) KR101016464B1 (enrdf_load_stackoverflow)
CN (2) CN1837956B (enrdf_load_stackoverflow)
TW (1) TW200702935A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468852B (zh) * 2009-03-26 2015-01-11 Hoya Corp 反射型光罩基底與其製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4809752B2 (ja) * 2006-11-01 2011-11-09 株式会社エスケーエレクトロニクス 中間調フォトマスク及びその製造方法
JP5044262B2 (ja) * 2007-04-10 2012-10-10 株式会社エスケーエレクトロニクス 多階調フォトマスク及びその製造方法
JP5089362B2 (ja) * 2007-12-13 2012-12-05 信越化学工業株式会社 フォトマスクおよび露光方法
KR101295235B1 (ko) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법
JP5306391B2 (ja) * 2011-03-02 2013-10-02 株式会社東芝 フォトマスク
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
CN104718496B (zh) * 2012-12-27 2019-06-28 爱发科成膜株式会社 相移掩膜的制造方法
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
JP7314523B2 (ja) * 2019-02-14 2023-07-26 大日本印刷株式会社 レーザ露光用フォトマスク及びフォトマスクブランクス
US20220390833A1 (en) * 2021-06-03 2022-12-08 Viavi Solutions Inc. Method of replicating a microstructure pattern
US12353128B2 (en) 2021-06-03 2025-07-08 Viavi Solutions Inc. Method of replicating a microstructure pattern

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0149221B1 (ko) * 1994-06-27 1999-02-01 김주용 반도체 제조용 포토 마스크
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP2002189282A (ja) * 2000-12-21 2002-07-05 Hitachi Ltd ハーフトーン位相シフトマスクおよびそれを用いた半導体装置の製造方法
JP4410951B2 (ja) * 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 パターン形成方法および液晶表示装置の製造方法
KR100390801B1 (ko) * 2001-05-24 2003-07-12 엘지.필립스 엘시디 주식회사 포토 반투과 마스크 제조방법
JP2003255510A (ja) * 2002-03-01 2003-09-10 Hitachi Ltd 電子装置の製造方法
JP2004341139A (ja) * 2003-05-14 2004-12-02 Canon Inc グレートーンマスク及びその製造方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP4108662B2 (ja) * 2004-10-04 2008-06-25 Ｎｅｃ液晶テクノロジー株式会社 薄膜半導体装置の製造方法、レジストパターン形成方法及びこれらの方法に使用するフォトマスク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468852B (zh) * 2009-03-26 2015-01-11 Hoya Corp 反射型光罩基底與其製造方法

Also Published As

Publication number Publication date
JP2006267262A (ja) 2006-10-05
JP4693451B2 (ja) 2011-06-01
CN1837956B (zh) 2010-10-20
KR20060102524A (ko) 2006-09-27
CN101833236A (zh) 2010-09-15
KR101016464B1 (ko) 2011-02-24
CN1837956A (zh) 2006-09-27

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