CN1801457A - Stickup device of support plate - Google Patents
Stickup device of support plate Download PDFInfo
- Publication number
- CN1801457A CN1801457A CNA2005101285926A CN200510128592A CN1801457A CN 1801457 A CN1801457 A CN 1801457A CN A2005101285926 A CNA2005101285926 A CN A2005101285926A CN 200510128592 A CN200510128592 A CN 200510128592A CN 1801457 A CN1801457 A CN 1801457A
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- CN
- China
- Prior art keywords
- support plate
- pressing plate
- chamber
- sticker
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
To provide an adhering apparatus for pressure-bonding a support plate while easily removing the gas held between a substrate such as semiconductor wafer or the like and the support plate. A pressure reducing chamber 50 is connected with an evacuation apparatus via a pipe 51, allows formation of a carrying-in/out aperture 52 at its one side surface, and opens or closes this aperture 52 with a shutter 53. This shutter 53 is moved upward and downward with a cylinder unit 54 and when it is pushed with a pusher 55 from a side at the lifted position, a seal provided at the internal side surface of the shutter 53 is placed in close contact with the circumference of the aperture 52 to seal the inside of the chamber 50. When the pusher 55 is moved backward and the shutter 53 is moved downward, the aperture 52 is opened and a laminate of the wafer W and support plate 2 is carried in and out using a transferring apparatus under the above state. Within the chamber 50, a holding base 56 and a pressuring plate 57 are arranged for pressure-bonding the laminate.
Description
Technical field
The present invention relates to a kind of device of with substrate thin plates such as semiconductor wafers the time, on substrate, pasting support plate for supporting.
Background technology
IC-card or mobile phone require slimming, miniaturization, lightweight, in order to satisfy this requirement, also must make the semiconductor chip of thin thickness about the semiconductor chip of assembling.Present thus, the thickness of wafer that becomes the matrix of semiconductor chip is 125 μ m～150 μ m, but it is said that follow-on chip uses be necessary for 25 μ m～50 μ m.
In utilizing the operation with the semiconductor wafer thin plateization such as grinder, be necessary that circuit to semiconductor wafer forms the face side with band or sheet material supporting.In patent documentation 1, the device of pasting support plate on semiconductor wafer is disclosed.
Disclosed device in patent documentation 1, configuration is a pair of heating plate up and down, and at the arranged outside of these heating plates a pair of vacuum still up and down, up and down between the heating plate during the duplexer of crimping semiconductor wafer and support plate, carries out in reduced atmosphere.Particularly in patent documentation 1, mechanism as the heating plate lifting that makes the top, do not use the forcing press of fluid pressure type and use the air ram that also can play buffer function, prevent that the contrary pressure that produces when expanding under from the heat effect of heating plate owing to duplexer from making the semiconductor wafer breakage.
[patent documentation 1] spy opens 2002-192394 communique paragraph (0012), (0014), (0019)
Under the situation that semiconductor wafer and support plate is stacked, be necessary with in the plane uniformly pressure support plate is pressed on the semiconductor wafer.If when pushing with inclined to one side power, the thickness of the bonding agent that then is clipped in the middle meeting localized variation causes the in uneven thickness of duplexer integral body.
If duplexer in uneven thickness is carried out grinding, the uneven thickness one of the semiconductor wafer that obtains of grinding then.
] in order to address the above problem, it is parallel to be necessary to make holding plate and pressing plate to remain.But, be that to be level with holding plate and pressing plate be prerequisite in patent documentation 1, if these holding plates and pressing plate are not parallel for a certain reason, then can not adjust simply it.
Summary of the invention
In order to address the above problem, sticker of the present invention has chamber, described chamber links to each other with vacuum source and has the gate of the input/output port of closed substrate airtightly, in this chamber, dispose mounting substrate and support plate duplexer the maintenance platform and can keep the pressing plate of platform elevating movement relatively with respect to this, this pressing plate is installed on the axle of liftable motion, and this beam warp is bearing on the lifting body in the mode that can carry out angle adjustment by joints such as spherojoints.In addition, the material of pressing plate and maintenance platform preferably adopts potteries such as aluminium oxide or carborundum.
By making said structure, substrate and support plate are fitted and when making duplexer or every stipulated number the angle of pressing plate is regulated, under the state of the best, fit all the time.
By using servo motor to carry out the elevating movement of aforementioned pressing plate, the torque that may command applies to support plate from pressing plate.Again, by the use location transducer pressing plate is carried out Position Control, may command puts on the power on the support plate.
By at pressing plate and keep at least one of platform heater being set, can temporarily make the bonding agent deliquescing of having hardened and make substrate and support plate applying again.
According to the present invention, when making substrates such as semiconductor wafer and support plate crimping, can suppress the generation of space and gas, also can improve the bonding precision between substrate and the support plate.
Description of drawings
Fig. 1 is the figure of thin plate chemical industry preface of the semiconductor wafer of the explanation sticker that uses semiconductor wafer of the present invention.
Fig. 2 is the stereogram of support plate.
Fig. 3 is the end view of the relation of expression substrate, bonding agent, support plate.
Fig. 4 is the stereogram of expression from the state of the top donor solvent of support plate.
Fig. 5 is the whole cutaway view of the sticker of semiconductor wafer of the present invention.
Embodiment
Below, based on accompanying drawing embodiments of the present invention are described.Fig. 1 is the figure that the thin plate chemical industry preface of the semiconductor wafer that uses sticker of the present invention is described, Fig. 2 is the stereogram of support plate, and Fig. 3 is the end view of the relation of expression substrate, bonding agent, support plate, and at first the integral body to thin plate chemical industry preface describes.
At first, go up adhesive-applying liquid at circuit (element) the formation face (A face) of semiconductor wafer W.In coating, use for example circulator.As bonding agent liquid, enumerate for example phenolic resins class material of linear phenol-aldehyde resin type, but be not limited thereto.Again, the thickness of bonding agent is for counting about μ m～100 μ m.
Then, as shown in Figure 3, above-mentioned bonding agent is cured and it is baked, on the front of substrate W, form and eliminated mobile bond layer 1.Pine for using for example baking oven adding.The thickness of bond layer 1 is not limited to above-mentioned situation, with the concavo-convex decision accordingly of circuit on the front that is formed at semiconductor wafer W (A face).In addition, can not reach at primary coating under the situation of necessary thickness, repeatedly apply and prepare drying repeatedly.In this case, the preparation drying of the bond layer except that the superiors has been strengthened dry degree, makes that bonding agent can residual flowability.
On the semiconductor wafer W of the bond layer 1 that is formed with specific thickness as mentioned above, use sticker of the present invention to paste support plate 2.The detailed description of sticker as described later.Support plate 2 makes the glass plate (thickness 1.0mm, external diameter 201.0mm) of the through hole 3 that for example is formed with thickness direction on whole zone as shown in Figure 2.
After this, the duplexer upset that will be made of integrated semiconductor wafer W and support plate 2 is carried out grinding with the back side (B face) of 10 pairs of semiconductor wafer W of grinder, makes the semiconductor wafer W thin plateization.In addition, for grinding, for the frictional heat that suppresses to produce between grinder 10 and the semiconductor wafer W, and on one side with water (grinding fluid) Yi Bian supply on the back side of semiconductor wafer W and carry out grinding.At this, because aforementioned bonding agent is chosen to be the bonding agent of water insoluble (dissolving in alcohol), so when grinding, support plate 2 can not peel off from semiconductor wafer W.
In above-mentioned thin plate change the back side (B face) of semiconductor wafer W on form circuit etc. as required after, this back side is fixed on the stripping and slicing band 11.This stripping and slicing band 11 has adhesiveness, and remains on the framework 12.
After this, inject alcohol from the top of support plate 2 as solvent.Alcohol arrives bond layer 1 and makes bond layer 1 dissolving via the through hole 3 of support plate 2.In this case, make framework 12 rotations, can make pure whole of spreading all over bond layer 1 at short notice with not shown circulator.As the alcohol that uses, then dissolubility is high more for the alcohol that ethanol or methyl alcohol equimolecular quantity are little, so preferred.Also multiple alcohol can be mixed again.Again, replace alcohol, also can use the mixed solution of ketone or alcohol and ketone.
As the method that alcohol etc. is supplied on the bond layer 1, the semiconductor wafer W that is bonded with support plate 2 can be immersed and fill in the groove of solvent.If add ultrasonic vibration, then effect is better in this case.
After making the bond layer dissolving as described above, as shown in Figure 4, remove the unnecessary solvent on the support plate 2 making framework 12 rotation after, be inserted into the periphery of support plate 2 with being installed on anchor clamps 15 on the front end of arm 14, by draft arm 14 obliquely upward, support plate 12 is peeled off gradually from periphery.
After taking off support plate 2, utilize stripping and slicing device 13, semiconductor wafer W is cut into chip size.After the cut-out, irradiation ultraviolet radiation on stripping and slicing band 11 reduces the adhesion of stripping and slicing band 11, and the chip that cuts off is taken out one by one.
Then, describe based on Fig. 5 about sticker.Sticker 5 has decompression chamber 50.This decompression chamber 50 links to each other with vacuum extractor via pipe arrangement 51, and again, what be formed with on a side that input and output use opens 52, and this is opened 52 and is opened and closed by gate 53.
Utilize pressure cylinder assembly 54 to make gate 53 elevating movements, on the position of rising by push from the side with pusher 55, make seal on the medial surface that is arranged at gate 53 closely abut to opening 52 around, make in the chamber 50 maintenances airtight.Again,, open, use the duplexer input and output of conveying device in this state wafer W and support plate 2 and will open 52 by pusher 55 being retreated and gate 53 being descended.
In aforementioned cavity 50, dispose the maintenance platform 56 and pressing plate 57 of the aforementioned duplexer of crimping.Keep platform 56 to be formed by carborundum (SiC), pressing plate 57 is by aluminium oxide (Al
2O
3) form.In addition, also consider to constitute pressing plate, on this ceramic sintered bodies, connect the structure of blast pipe, but, the possibility that can not fully remove the gas in the bonding agent is arranged then if adopt this structure with ceramic sintered bodies.
On aforementioned maintenance platform 56, be formed with through hole 58, in this through hole 58, insert and be connected with lifter pin 59.The pressure cylinder assembly 60 that this lifter pin 59 is installed to the below by being arranged at chamber 50 carries out on the framework 61 of elevating movement.
Again, on aforementioned maintenance platform 56, be embedded with heater 62, aforementioned duplexer be heated to about 200 ℃, temporarily make the bonding agent deliquescing of sclerosis by this heater 62.Heater also can be arranged on pressing plate 57 1 sides in addition.
On the other hand, aforementioned pressing plate 57 remains on the backboard 63, and this backboard 63 is installed on the lower end of the axle 64 that connects chamber 50.This pars intermedia of 64 is provided with flange 65, between this flange 65 and chamber 50 upper surfaces bellows 66 is installed, and keeps the airtight conditions in the chamber 50.
Again, framework 67 extends upward from aforementioned cavity 50, servo motor 68 at these framework 67 upper supports, the nut portions 71 of lifting body 70 is combined with leading screw 69 screw threads by these servo motor 68 rotations, rise μ at this and fall the upper end of supporting aforementioned axis 64 on the body 70 via spherojoint 72.And then, dispose the transducer 73 of the upper-lower position that detects axle 64 in the side of axle 64.
In the above description, for the duplexer of crimping semiconductor wafer W and support plate 2, at first carry out the adjustment of the depth of parallelism of pressing plate 57.In order to obtain the depth of parallelism, the bolt that unclamps spherojoint 72 makes spherojoint 72 be in state freely.Then, under this state, make pressing plate 57, make the lower surface and the upper surface butt that keeps platform 56 of pressing plate 57 because of deadweight descends.Keep platform 56 parallel this moment with pressing plate 57.Then, fastening bolt and with spherojoint 72 fixing after, pressing plate 57 is risen.
The adjustment of the depth of parallelism needn't be carried out at every turn, but every suitable number of times carries out.Again, in the above description, under the situation of not clamping duplexer, carry out the adjustment of the depth of parallelism, but also can make and the sheet material of the same thickness of duplexer of crimping is clipped in and keeps adjusting the depth of parallelism between platform 56 and the pressing plate 57.
After finishing the adjustment of the depth of parallelism according to the above, by gate 53 is fallen, and nitrogen is purified and the opening of chamber 50 that be in atmospheric pressure state 52 opened.With not shown conveying device the duplexer of semiconductor wafer W and support plate 2 is packed in the chamber 50, then be undertaken on the pin 59, close opening 52 with gate 53, making becomes airtight state in the chamber 50.Fig. 5 represents this state.
Then, make decompression in the chamber 50, become 1kPa when following at pressure, driving pressure cylinder component 60 and pin 59 is descended makes the duplexer mounting to the maintenance platform 56 that has been heated to about 150 ℃.
Meanwhile, drive servo motor 68 and pressing plate 57 is dropped on the predefined position, between platform 56 and the pressing plate 57 duplexer is pressurizeed keeping.In this state, kept about one minute, with substrate W and support plate 2 thermo-compressed.
After this, purification nitrogen also makes and recovers atmospheric pressure in the chamber 50, and pressing plate 57 is risen, and gate 53 descends, with thermo-compressed duplexer outside chamber 50, export.
Claims (4)
1. the sticker of a support plate, the circuit formation face of substrates such as semiconductor wafer is pasted on the support plate, it is characterized in that, this sticker has the chamber that links to each other and can seal airtightly with vacuum source, in this chamber, dispose mounting substrate and support plate duplexer the maintenance platform and can keep the pressing plate of platform elevating movement relatively with respect to this, this pressing plate is installed on the axle of liftable motion, and this beam warp is bearing on the lifting body in the mode that can carry out angle adjustment by joint.
2. sticker as claimed in claim 1 is characterized in that, aforementioned pressing plate is carried out torque (pressure) control and Position Control.
3. sticker as claimed in claim 1 is characterized in that, at least one of aforementioned pressing plate and maintenance platform is provided with heater.
4. sticker as claimed in claim 1 is characterized in that, the material of aforementioned pressing plate and maintenance platform is a pottery.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004344677 | 2004-11-29 | ||
| JP2004344677A JP4679890B2 (en) | 2004-11-29 | 2004-11-29 | Support plate pasting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1801457A true CN1801457A (en) | 2006-07-12 |
| CN100454481C CN100454481C (en) | 2009-01-21 |
Family
ID=36634580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101285926A Active CN100454481C (en) | 2004-11-29 | 2005-11-29 | Stickup device of support plate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4679890B2 (en) |
| KR (1) | KR101193308B1 (en) |
| CN (1) | CN100454481C (en) |
| TW (1) | TWI431679B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101314269B (en) * | 2007-05-30 | 2011-03-30 | 罗伯特别克勒有限公司 | Multi-level laminating press |
| US8454357B2 (en) | 2007-11-30 | 2013-06-04 | Komax Holding Ag | Hotplate with lifting elements |
| CN107331604A (en) * | 2016-04-29 | 2017-11-07 | 上海微电子装备（集团）股份有限公司 | A kind of bonding apparatus |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006000687B4 (en) | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Combination of a carrier and a wafer, device for separating the combination and methods for handling a carrier and a wafer |
| KR100861109B1 (en) | 2006-12-27 | 2008-09-30 | 세메스 주식회사 | Apparatus for processing substrate and method of processing substrate using the same |
| JP5209947B2 (en) * | 2007-12-13 | 2013-06-12 | 東京応化工業株式会社 | Adhesive treatment method |
| JP5145126B2 (en) * | 2008-06-11 | 2013-02-13 | 株式会社アルバック | Bonding apparatus and bonding method |
| JP5515250B2 (en) * | 2008-07-31 | 2014-06-11 | 富士通株式会社 | Dust collecting mechanism and substrate cutting device |
| JP5159566B2 (en) * | 2008-11-06 | 2013-03-06 | リンテック株式会社 | Sheet peeling apparatus and peeling method |
| EP2660851B1 (en) | 2009-03-18 | 2020-10-14 | EV Group GmbH | Device and method for releasing a wafer from a holder |
| EP2706562A3 (en) * | 2009-09-01 | 2014-09-03 | EV Group GmbH | Device and method for releasing a semiconductor wafer from a carrier substrate by tilting a film frame |
| EP2523208B1 (en) | 2010-04-23 | 2013-06-12 | EV Group GmbH | Device and method for releasing a product substrate from a holder substrate |
| CN102034725B (en) * | 2010-09-30 | 2013-01-30 | 东莞宏威数码机械有限公司 | Automatic substrate positioning and loading device |
| JP2012104518A (en) * | 2010-11-05 | 2012-05-31 | Sumitomo Heavy Ind Ltd | Substrate delivery mechanism of sealing device and substrate delivery method of sealing device |
| JP5149977B2 (en) * | 2011-04-15 | 2013-02-20 | リンテック株式会社 | Semiconductor wafer processing method |
| JP2014160743A (en) * | 2013-02-19 | 2014-09-04 | Tokyo Ohka Kogyo Co Ltd | Bonding apparatus and cleaning method of the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH081898B2 (en) * | 1988-11-02 | 1996-01-10 | 三菱電機株式会社 | Wafer sticker |
| JPH0582493A (en) * | 1991-03-11 | 1993-04-02 | Hitachi Ltd | Wafer bonding device and method of bonding wafer using the device |
| KR100357881B1 (en) | 1999-03-09 | 2002-10-25 | 앰코 테크놀로지 코리아 주식회사 | Manufacturing apparatus of semiconductor device and its control method |
| JP3607143B2 (en) * | 1999-11-19 | 2005-01-05 | 株式会社タカトリ | Method and apparatus for attaching protective tape to semiconductor wafer |
| JP3742000B2 (en) * | 2000-11-30 | 2006-02-01 | 富士通株式会社 | Press machine |
| JP2002192394A (en) * | 2000-12-28 | 2002-07-10 | Mitsubishi Gas Chem Co Inc | Press working method for inorganic substrate and press device therefor |
| JP2003273049A (en) * | 2002-03-18 | 2003-09-26 | Toshiba Ceramics Co Ltd | Vacuum bonding device of wafer |
| JP2004153159A (en) * | 2002-10-31 | 2004-05-27 | Enzan Seisakusho:Kk | Protection member adhering method for semiconductor wafer and its device |
| TWI222671B (en) * | 2003-04-25 | 2004-10-21 | Fujitsu Ltd | Apparatus for fabricating bonded substrate |
| JP4549648B2 (en) * | 2003-09-30 | 2010-09-22 | 信越半導体株式会社 | Semiconductor bonding equipment |
-
2004
- 2004-11-29 JP JP2004344677A patent/JP4679890B2/en active Active
-
2005
- 2005-11-28 KR KR1020050114163A patent/KR101193308B1/en active IP Right Grant
- 2005-11-29 CN CNB2005101285926A patent/CN100454481C/en active Active
- 2005-11-29 TW TW094141913A patent/TWI431679B/en active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101314269B (en) * | 2007-05-30 | 2011-03-30 | 罗伯特别克勒有限公司 | Multi-level laminating press |
| CN101314270B (en) * | 2007-05-30 | 2012-07-04 | 罗伯特别克勒有限公司 | Method and device for laminating essentially plate-shaped workpieces under the effect of pressure and heat |
| US8454357B2 (en) | 2007-11-30 | 2013-06-04 | Komax Holding Ag | Hotplate with lifting elements |
| CN101444986B (en) * | 2007-11-30 | 2013-08-14 | 库迈思控股股份公司 | Hotplate with lifting element |
| CN107331604A (en) * | 2016-04-29 | 2017-11-07 | 上海微电子装备（集团）股份有限公司 | A kind of bonding apparatus |
| US10780684B2 (en) | 2016-04-29 | 2020-09-22 | Shanghai Micro Electronics Equipment (Group) Co., Ltd. | Bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101193308B1 (en) | 2012-10-19 |
| TWI431679B (en) | 2014-03-21 |
| TW200629395A (en) | 2006-08-16 |
| KR20060059825A (en) | 2006-06-02 |
| JP2006156679A (en) | 2006-06-15 |
| JP4679890B2 (en) | 2011-05-11 |
| CN100454481C (en) | 2009-01-21 |
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Effective date of registration: 20230609 Address after: Kanagawa, Japan Patentee after: Process Equipment Business Division Preparation Co.,Ltd. Patentee after: E.T. System Engineering Co.,Ltd. Address before: Kawasaki, Japan Patentee before: TOKYO OHKA KOGYO CO.,LTD. Patentee before: E.T. System Engineering Co.,Ltd. Effective date of registration: 20230609 Address after: Ibaraki Patentee after: Ameco Technology Co.,Ltd. Patentee after: E.T. System Engineering Co.,Ltd. Address before: Kanagawa, Japan Patentee before: Process Equipment Business Division Preparation Co.,Ltd. Patentee before: E.T. System Engineering Co.,Ltd. |