(1) 200525599 九、發明說明 【發明所屬之技術領域】 本發明，是有關當薄板化半導體晶圓等的基板時供支 撐而將支撐托板貼合在基板上的裝置及貼合方法。 【先前技術】 1C卡片或行動電話的薄型化、小型化、輕量化是被要 求，對於爲了滿足此要求而使被組裝的半導體晶圓也必需 ® 是薄的半導體晶圓。因此成爲半導體晶圓的基礎的晶圓的 厚度在現狀中雖是125 // m〜150 μ m，但是在次世代的晶 圓用時必需要25//m〜50//m。 藉由砂輪機等將半導體晶圓薄板化的過程中，需要藉 由帶或板材支撐半導體晶圓的電路形成面側。在專利文獻 1中，已揭示將支撐托板貼合半導體晶圓的裝置。 專利文獻1所揭示的裝置，是配置上下一對的熱托板 的同時，在這些熱托板的外側設置上下一對的真空瓶罐， ® 在上下的熱托板間壓合半導體晶圓及支撐托板的積層體 時，是在減壓環境下進行。特別是，在專利文獻1中不使 用油壓式的沖床機作爲讓上方的熱托板昇降動作的手段， 而是藉由使用也具有緩衝器功能的空氣滑閥，防止因來自 熱托板的熱而使積層體膨脹時所發生的逆壓力而導致半導 體晶圓破損。 [專利文獻1]日本特開2 002 - 1 92 3 94號公報的段落 (0012) 、 （0014) 、 ( 0019) -4- (2) 200525599 【發明內容】 (本發明所欲解決的課題） 重疊半導體晶圓及支撐托板的情況時，這些之間會有 空氣存在。且加熱壓合時溶劑所含有的會接合劑在半導體 晶圓及支撐托板之間成爲氣體發生。 在專利文獻1中將熱托板配置於真空瓶罐內並在減壓 環境下進行壓合，但是要去除存在於半導體晶圓及支撐托 φ 板之間的氣體並不容易。 (用以解決課題的手段） 供解決上述課題的本發明的貼合裝置，是具備：可載 置半導體晶圓等的基板及支撐托板的積層體用的保持台、 及對於此保持台相對昇降動作可能的按壓板，且在前述保 持台及按壓板之中與支撐托板接觸的構件設有排氣機構。 前述排氣機構，是將在厚度方向形成貫通孔的多孔 φ 板、陶瓷燒結體或是不銹鋼板等的面精度高的板材，嵌入 前述保持台及按壓板之中與支撐托板接觸的構件。且，對 於前述按壓板是藉由萬向接頭使安裝角度調整可能地支撐 於框架較佳。 且’本發明的貼合方法，是在半導體晶圓等的基板的 電路形成面上塗抹接合劑，在此接合劑上重疊具有通氣性 的支撐托板，將此基板及支撐托板的積層體載置於保持台 上，接著直到保持台及按壓板之間成爲預定的間隔（例如 -5- 200525599 (3) 1 . 2 m m )爲止使按壓板對於保持台相對地下降來壓合前述 基板及支撐托板的同時，使存在於基板及支撐托板之間的 氣體，通過與支撐托板及此支撐托板接觸的保持台或是按 壓板朝外部排氣。 且，本發明的別的貼合方法，是將在電路形成面塗抹 接合劑的半導體晶圓等的基板及支撐托板，分別使用搬運 手段搬運至貼合裝置內’重疊前述基板及前述支撐托板， 將那些的積層體載置於保持台上，接著直到保持台及按壓 板之間成爲預定的間隔（例如1 · 2 m m )爲止使按壓板對於 保持台相對地下降來壓合前述基板及支撐托板。 (發明之效果） 依據本發明，當壓合半導體晶圓等的基板及支撐托板 時’可以效果地除去存在於基板及支撐托板之間的氣體。 因此，不會壓合後剝離，或壓合後的厚度會部分相異，在 硏削過程可以正確地控制半導體晶圓的厚度。 【實施方式】 以下依據添付圖面說明本發明的實施例。第1圖是說 明已組裝了本發明的貼合裝置（方法）的半導體晶圓的薄 板化過程的圖’首先說明薄板化過程的整體。 在半導體晶圓W的電路（元件）形成面（A面）塗抹 接合劑液。該塗抹時是使用例如轉盤。接合劑液雖例如中 間體型的酣樹脂系材料，但是不限定此。 -6 - 200525599 (4) 接著，予備乾燥上述的接合劑液來降低流動性，使可 維持接合劑層1的形狀。在予備乾燥中使用烤箱在例如8 0 °C進行5分鐘加熱。接合劑層i的厚度是依據形成於半導 體晶圓W的表面（A面）的電路的凹凸的決定。且，在一 次的塗抹中無法形成需要的厚度的情況時，是返覆數次進 行塗抹及予備乾燥。此情況，最上層以外的接合劑層的予 備乾燥是加強乾燥的程度使接合劑無流動性。 從以上’在已形成預定厚度的接合劑層1半導體晶圓 ® W，使用本發明的貼合裝置貼合支撐托板2。貼合裝置的 詳細是如後述。 此後，反轉已一體化的半導體晶圓 W及支撐托板2 的積層體，藉由砂輪機1 0硏削半導體晶圓W的背面（B 面），將半導體晶圓 W薄板化。且，於硏削時一邊將供 抑制砂輪機1 〇及半導體晶圓W之間所產生的摩擦熱用的 水（硏削液）供給至半導體晶圓 W的背面一邊進行硏 削。在此，前述接合劑因爲選用不溶於水（可溶於酒精） ® 的接合劑，所以硏削時支撐托板2不會從半導體晶圓 w 剝落。 依據需要在上述薄板化半導體晶圓W的背面（B面） 形成電路等後，將該背面固定於切割帶1 1上。使此切割 帶1 1具有粘接性的同時並被保持於框架1 2。 此後，從支撐托板2上注入作爲溶劑的酒精。酒精是 通過支撐托板2的貫通孔到達接合劑層1並溶解接合劑層 1。此情況，藉由框架1 2旋轉無圖示的轉盤，使酒精可以 200525599 (5) 在短時間內散布至接合劑層1的全面。所使用的酒精是如 乙醇或甲醇等的分子量愈小溶解性愈高較佳。且混合複數 酒精也可以。且可取代酒精使用如酮或是酒精及酮的混合 溶液也可以。 將酒精等供給至接合劑層1的手段，是在裝滿了溶劑 的槽內浸漬已接合了支撐托板2的半導體晶圓 W也可 以，此情況施加超音波振動的話更有效果。 如以上溶解了接合劑層1的話，旋轉框架1 2除去支 β 撐托板2上的多餘的溶劑之後，使被安裝於臂1 4的先端 的磁鐵1 5接近支撐托板2的周邊並藉由磁力附著，接 著，藉由朝傾斜上方拉引臂1 4而從周邊部將支撐托板2 漸漸地剝離。 而且，取下支撐托板2之後，藉由切割裝置1 3將半 導體晶圓 W切斷成晶圓尺寸。切斷後，是讓紫外線照射 於切割帶1 1，下降切割帶1 1的粘接力，分別取出被切斷 的晶圓。 · 接著，依據第2圖〜第4圖說明貼合裝置。在此，第 2圖是本發明的貼合平台的整體圖，第3圖是支撐托板的 立體圖，第4圖（a )〜（c )是說明供校出保持台及按壓 板的平行度用的程序的圖。在貼合平台中，貼合裝置5之 外，配置有機械手臂8而可搬運工件於：半導體晶圓載置 台6、支撐托板載置台7及這些貼合裝置5、半導體晶圓 載置台6、支撐托板載置台7之間。 貼合裝置5是在保持台5 1及按壓板5 2之間壓合半導 200525599 (6) 體晶圓W及支撐托板2的積層體。 前述保持台51是上面平坦的陶瓷製並被固定於底基 5 3。在此底基5 3中設有框架5 4，在此框架5 4支撐有馬達 5 5，藉由此馬達5 5而旋轉的螺栓5 6是可旋轉自如地支撐 於前述框架5 4。 一方面，前述按壓板52是藉由球接頭57被支撐於昇 降體5 8。在球接頭5 7的側方設有螺絲5 9，藉由鬆緩此螺 絲5 9使按壓板5 2是在自由的狀態下被支撐，藉由旋緊螺 ® 絲5 9強力固定球接頭5 7的球面來使按壓板5 2以當時的 角度被支撐於昇降體58。 且昇降體58的左右的端部是藉由與設在框架54的左 右的構件的內側的軌道6 0卡合而可朝上下方向移動，且 在昇降體5 8的中央上端部固定有螺帽構件6 1，在此螺帽 構件61螺合前述螺栓5 6。然後，藉由驅動前述馬達5 5旋 轉螺栓56而使昇降體58沿著軌道60昇降動作，按壓板 52也與昇降體58 —體地昇降動作。 ® 在前述按壓板5 2形成朝向下方開口的凹部，陶瓷燒 結體62嵌入此凹部，且在按壓板52安裝有與真空泵連接 的排氣管63。前述陶瓷燒結體62是多孔質，藉由使供安 裝排氣管63的孔延伸至陶瓷燒結體62爲止，就可透過陶 瓷燒結體62進行吸引。 使用上述貼合裝置5壓合半導體晶圓W及支撐托板2 時’首先’校出保持台5 1及按壓板5 2的平行度。此操作 是雖不需要每次進行但需要定期地進行。 -9- (7) (7)200525599 校出平行度時，首先如第4圖（a )鬆緩螺絲5 9使球 接頭5 7成爲自由的狀態。而且，保持此狀態下降按壓板 5 2，如第4圖（b )所示，使按壓板5 2 (陶瓷燒結體62 ) 的下面抵接保持台5 1的上面。在此時點，保持台5 1及按 壓板5 2是成爲平行。接著，旋緊螺絲5 9固定球接頭5 7 之後，上昇按壓板5 2成爲第4圖（c )的狀態。 且，在被配置於貼合平台的半導體晶圓載置台6，設 有供支撐半導體晶圓W的下面用的銷6a，在此銷6a及載 置台6之間形成機械手臂8的手臂8 a可進入的間隙。進 一步，支撐托板載置台7是形成環狀，且在其一部分形成 比機械手臂8的手臂8a寬廣的切口 7a。 且，被保持於支撐托板載置台7的支撐托板2，是如 第3圖所示，比半導體晶圓W大徑（半徑2mm )，使用 厚度 0.5mm的鐵-鎳合金（鎳 36%的合金：殷鋼），φ 0 · 5 m m的貫通孔3是以0.7 m m間距形成，進一步外緣部是 形成無貫通孔的平坦部4。且，支撐托板是使用具有通氣 性功能的陶瓷板等也可以。 上述平坦部4是在將支撐托板2重疊於半導體晶圓W 的狀態下，比半導體晶圓 W的端緣部疊上的部分更外側 的部分。半導體晶圓 W因已薄板化所以非常容易破裂或 發生欠缺。特別是端緣部疊到貫通孔的話，此部分因是無 任何支撐的狀態，所以會因硏削液的水壓或是砂輪機的壓 力而容易破裂或發生欠缺。在此，實施例中是半導體晶圓 W的端緣部疊在平坦部4。 -10- 200525599 (8) 且，依據半導體晶圓W的目標厚度，在支撐托板2 整體形成貫通孔也可以。 以上的藉由貼合平台壓合半導體晶圓W及支撐托板2 時’首先在半導體晶圓載置台6上讓機械手臂8的手臂8a 插入待機中的半導體晶圓W的下方，上昇手臂8 a.將半導 體晶圓W移載至手臂8a上。且，在半導體晶圓w的上面 (電路形成面）形成接合劑層1。 接著，水平方向移動手臂8 a，使半導體晶圓w位在肇 待機於支撐托板載置台7的支撐托板2的下方。此後，上 昇手臂8 a ’在半導體晶圓W的上面的接合劑層1上重疊 支撐托板2 ’就适樣將半導體晶圓w及支撐托板2的積層 體從支撐托板載置台7抬起。這時手臂8 a是通過形成於 支撐托板載置台7的一部分的切口 7a。 此後，移動手臂8 a將半導體晶圓W及支撐托板2的 積層體組裝於貼合裝置5的保持台5 1上。此後，驅動馬 達5 5來下降按壓板5 2，使保持台5 1及按壓板5 2之間是 馨 成爲接近1.2mm的狀態爲止進行壓合。且，在此壓合時存 在於半導體晶圓W及支撐托板2之間的氣泡或是接合劑 層1的溶劑所氣化的氣體是通過陶瓷燒結體62排出外 部。 且，在圖示例中雖顯示將陶瓷燒結體嵌入按壓板來發 揮排氣功能的例，但是保持台是可發揮排氣功能的結構也 可以。這種情況半導體晶圓及支撐托板的上下相反。 在上述的實施例中，首先半導體晶圓 W的電路（元 -11 - (9) 200525599 件）形成面在接合劑將塗抹，之後保持台將具有貼合裝置 內在搬入，但是首先將基板及支撐托板藉由個別的手段搬 入貼合裝置內，使貼合裝置內成爲減壓狀態後再重疊基板 及支撐托板也可以。 第5圖（a )〜（h )，是上述本發明的別的貼合方法 的說明圖。 (a )對於由保持台5 1及按壓板5 2構成的貼合裝 置，從保持台5 1上拉起已調整平行度的按壓板5 2的狀 · 態， (b )使具有通氣性的支撐托板2是搬運至貼合裝置 內，藉由端面保持， (c )將晶圓W搬運至貼合裝置內， (d )在貼合裝置內重疊支撐托板2及晶圓W， (e )將已與支撐托板2重疊的晶圓W載於保持台 上， (f )使頂托板下降至預定的間隔爲止進行壓合貼合 Φ 的同時，使位在晶圓W及支撐托板2之間的氣體，通過 與支撐托板2及支撐托板接觸的保持台或是按壓板朝外部 排氣’ (g )支撐托板2及晶圓W的貼附後上昇頂托板， (h )將已貼合的積層體從貼合裝置搬出。 【圖式簡單說明】 [第1圖]組入了一部分本發明的半導體晶圓的貼合方 -12- (10) (10)200525599 法的半導體晶圓的薄板化過程的說明圖。 [第2圖]本發明的貼合平台的整體圖。 [第3圖]支撐托板的立體圖。 [第4圖](a )〜（c )是說明供校出保持台及按壓板 的平行度用的程序的圖。 [第5圖]說明本發明的別的貼合方法的圖。 【主要元件符號說明】 · W半導體晶圓 1接合劑層 2支撐托板 3貫通孔 4平坦部 5貼合裝置 6半導體晶圓載置台 6 a銷 籲 7支撐托板載置台 7a 切口 8機械手臂 8a手臂 1 〇砂輪機 1 1切割帶 12 框架 1 3 切割裝置 -13- (11) 200525599(1) 200525599 IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a device and a bonding method for bonding a support plate to a substrate while supporting the substrate when a substrate such as a semiconductor wafer is thinned. [Prior art] Thinning, miniaturization, and weight reduction of 1C cards or mobile phones are required, and semiconductor wafers to be assembled in order to meet this requirement must be thin semiconductor wafers. Therefore, although the thickness of the wafer which is the basis of the semiconductor wafer is 125 // m to 150 μm in the current situation, it is necessary to use 25 // m to 50 // m for the next-generation wafer. In the process of thinning a semiconductor wafer by a grinder or the like, it is necessary to support the circuit formation surface side of the semiconductor wafer by a belt or a plate. Patent Document 1 discloses a device for bonding a support plate to a semiconductor wafer. The device disclosed in Patent Document 1 is to arrange a pair of upper and lower heat trays, and set a pair of upper and lower vacuum bottles and cans on the outside of these heat trays. ® The semiconductor wafer and the upper and lower heat trays are pressed together. When supporting the laminated body of the pallet, it is performed under a reduced pressure environment. In particular, Patent Literature 1 does not use a hydraulic press as a means for raising and lowering the upper hot plate, but uses an air slide valve that also has a buffer function to prevent the The semiconductor wafer is damaged due to the back pressure generated when the laminated body is expanded by heat. [Patent Document 1] Paragraphs (0012), (0014), (0019) -4- (2) 200525599 of Japanese Patent Laid-Open No. 2 002-1 92 3 94 [Contents of the invention] (Problems to be solved by the present invention) When the semiconductor wafer and the supporting plate are overlapped, there is air between them. In addition, the bonding agent contained in the solvent at the time of heating and pressing becomes a gas between the semiconductor wafer and the support plate. In Patent Document 1, the hot plate is placed in a vacuum bottle can and pressed under a reduced pressure environment. However, it is not easy to remove the gas existing between the semiconductor wafer and the support plate. (Means for Solving the Problems) The bonding apparatus of the present invention for solving the above problems is provided with a holding table for a laminated body capable of mounting a substrate such as a semiconductor wafer and a supporting plate, and a holding table facing the holding table. An evacuation mechanism is provided on a pressing plate that is capable of lifting and lowering, and a member that is in contact with the support pallet among the holding table and the pressing plate. The exhaust mechanism is a member having a high surface accuracy such as a porous φ plate, a ceramic sintered body, or a stainless steel plate having through-holes formed in the thickness direction, and is embedded in the holding table and the pressing plate in contact with the supporting bracket. In addition, it is preferable that the pressing plate is supported by the frame by the universal joint so that the mounting angle can be adjusted. Furthermore, the bonding method of the present invention is to apply a bonding agent to a circuit formation surface of a substrate such as a semiconductor wafer, and superimpose an air-permeable support pallet on the adhesive, and laminate the substrate and the support pallet. Place it on the holding table, and then press down the pressing plate relative to the holding table until the predetermined interval between the holding table and the pressing plate (for example, -5- 200525599 (3) 1.2 mm) is pressed to press the substrate and While supporting the supporting plate, the gas existing between the substrate and the supporting plate is exhausted to the outside through the holding table or the pressing plate that is in contact with the supporting plate and the supporting plate. In addition, in another bonding method of the present invention, a substrate such as a semiconductor wafer coated with a bonding agent on a circuit formation surface and a supporting tray are transported into a bonding apparatus using a conveying means, respectively, and the substrate and the supporting tray are overlapped. The laminated body is placed on the holding table, and then the pressing plate is relatively lowered with respect to the holding table until the holding table and the pressing plate become a predetermined interval (for example, 1.2 mm) to press the substrate and the substrate. Support pallet. (Effects of the Invention) According to the present invention, when a substrate and a supporting plate of a semiconductor wafer or the like are laminated, the gas existing between the substrate and the supporting plate can be effectively removed. Therefore, it does not peel after lamination, or the thickness after lamination is partially different, and the thickness of the semiconductor wafer can be accurately controlled during the cutting process. [Embodiment] An embodiment of the present invention will be described below with reference to the attached drawings. Fig. 1 is a diagram illustrating a thinning process of a semiconductor wafer in which the bonding apparatus (method) of the present invention is assembled. 'First, the entire thinning process will be described. An adhesive liquid is applied to a circuit (element) formation surface (A surface) of the semiconductor wafer W. This application is performed using, for example, a turntable. The bonding agent liquid is, for example, an intermediate-type fluorene resin-based material, but is not limited thereto. -6-200525599 (4) Next, prepare the above-mentioned adhesive solution to reduce the fluidity and maintain the shape of the adhesive layer 1. In the preliminary drying, heating is performed, for example, at 80 ° C. for 5 minutes. The thickness of the adhesive layer i is determined based on the unevenness of the circuit formed on the surface (A surface) of the semiconductor wafer W. In addition, when the required thickness cannot be formed in one application, the application is repeated several times, and it is prepared to dry. In this case, the pre-drying of the adhesive layer other than the uppermost layer is to enhance the degree of drying so that the adhesive has no fluidity. From the above, the supporting pallet 2 is bonded using the bonding apparatus of the present invention on the semiconductor wafer ® W having the adhesive layer 1 having a predetermined thickness formed. The details of the bonding device are described later. Thereafter, the laminated body of the integrated semiconductor wafer W and the supporting plate 2 is inverted, and the back surface (side B) of the semiconductor wafer W is cut by a grinder 10 to reduce the thickness of the semiconductor wafer W. In addition, during the cutting, the water (cutting liquid) for suppressing the frictional heat generated between the grinder 10 and the semiconductor wafer W is supplied to the back surface of the semiconductor wafer W to perform the cutting. Here, because the aforementioned bonding agent is selected from a water-insoluble (alcohol-soluble) ® bonding agent, the support plate 2 does not peel off from the semiconductor wafer w during the cutting. After forming a circuit or the like on the back surface (B surface) of the thinned semiconductor wafer W as necessary, the back surface is fixed to the dicing tape 11. The dicing tape 11 is held by the frame 12 while having adhesiveness. Thereafter, alcohol as a solvent is injected from the support pallet 2. Alcohol reaches the bonding agent layer 1 through the through holes of the support pallet 2 and dissolves the bonding agent layer 1. In this case, by rotating a dial (not shown) with the frame 12, the alcohol can be spread to the entire surface of the adhesive layer 1 in a short time. The smaller the molecular weight of the alcohol used, such as ethanol or methanol, the better the solubility. It is also possible to mix plural alcohols. It can also be used instead of alcohol such as ketone or a mixed solution of alcohol and ketone. The means for supplying alcohol or the like to the bonding agent layer 1 may be that the semiconductor wafer W to which the supporting pallet 2 is bonded may be immersed in a tank filled with a solvent. In this case, ultrasonic vibration is more effective. If the adhesive layer 1 is dissolved as described above, after rotating the frame 12 to remove the excess solvent on the support plate 2, the magnet 15 mounted on the tip of the arm 14 is brought close to the periphery of the support plate 2 and borrowed. It is magnetically attached, and then the support pallet 2 is gradually peeled from the peripheral portion by pulling the pull arm 14 upward obliquely. After the support plate 2 is removed, the semiconductor wafer W is cut to a wafer size by the dicing device 13. After cutting, the dicing tape 11 is irradiated with ultraviolet rays, the adhesive force of the dicing tape 11 is lowered, and the cut wafers are taken out respectively. · Next, the bonding apparatus will be described with reference to FIGS. 2 to 4. Here, FIG. 2 is an overall view of the bonding platform of the present invention, FIG. 3 is a perspective view of a support pallet, and FIGS. 4 (a) to (c) are illustrations showing the parallelism of the holding table and the pressing plate. Diagram of used program. In the bonding platform, in addition to the bonding device 5, a robot arm 8 is arranged to carry workpieces: a semiconductor wafer mounting table 6, a support pallet mounting table 7, and these bonding devices 5, a semiconductor wafer mounting table 6, and a support. Between the pallet mounting platforms 7. The bonding device 5 is a laminated body in which a semiconductor 200525599 (6) body wafer W and a support plate 2 are pressed between the holding table 51 and the pressing plate 5 2. The holding table 51 is made of ceramic with a flat top surface and is fixed to the base 5 3. A frame 5 4 is provided in the base 5 3. A motor 5 5 is supported by the frame 5 4, and a bolt 5 6 rotated by the motor 5 5 is rotatably supported by the frame 5 4. On the one hand, the aforementioned pressing plate 52 is supported by the lifting body 58 through a ball joint 57. A screw 5 9 is provided on the side of the ball joint 5 7. By loosening the screw 5 9, the pressing plate 5 2 is supported in a free state, and the ball joint 5 is firmly fixed by tightening the screw 5 9 7 spherical surface, so that the pressing plate 52 is supported by the lifting body 58 at the current angle. The left and right end portions of the lifting body 58 are movable in the up-and-down direction by engaging with rails 60 provided on the inner side of the left and right members of the frame 54, and a nut is fixed to the central upper end portion of the lifting body 58. The member 61 is screwed with the nut member 61. Then, by driving the motor 55 to rotate the bolt 56, the lifting body 58 is moved up and down along the rail 60, and the pressing plate 52 is also moved up and down integrally with the lifting body 58. ® A depression is formed in the pressing plate 52 to open downward. The ceramic sintered body 62 is fitted in this depression, and an exhaust pipe 63 connected to the vacuum pump is attached to the pressing plate 52. The ceramic sintered body 62 is porous. By extending the hole to which the exhaust pipe 63 is mounted to the ceramic sintered body 62, the ceramic sintered body 62 can be sucked through. When the semiconductor wafer W and the supporting plate 2 are laminated using the above-mentioned laminating device 5, the parallelism of the holding table 51 and the pressing plate 52 is first checked. This operation does not need to be performed every time, but needs to be performed periodically. -9- (7) (7) 200525599 To calibrate the parallelism, first loosen the screw 5 9 as shown in Figure 4 (a) to make the ball joint 5 7 free. Then, while keeping this state, the pressing plate 52 is lowered, and as shown in FIG. 4 (b), the lower surface of the pressing plate 5 2 (ceramic sintered body 62) is brought into contact with the upper surface of the holding table 51. At this point, the holding table 51 and the pressing plate 52 are made parallel. Next, the ball joint 5 7 is fixed by tightening the screws 5 9, and then the pressing plate 5 2 is raised to the state shown in FIG. 4 (c). In addition, a pin 6a for supporting the lower surface of the semiconductor wafer W is provided on the semiconductor wafer mounting table 6 arranged on the bonding platform. An arm 8a of a robot arm 8 may be formed between the pin 6a and the mounting table 6. Into the gap. Further, the supporting plate mounting table 7 is formed in a ring shape, and a cutout 7a wider than the arm 8a of the robot arm 8 is formed in a part thereof. In addition, as shown in FIG. 3, the support pallet 2 held by the support pallet mounting table 7 has a larger diameter (radius 2 mm) than the semiconductor wafer W, and an iron-nickel alloy (nickel 36% nickel) having a thickness of 0.5 mm is used. Alloy: Yin Steel), φ 0 · 5 mm through-holes 3 are formed at a pitch of 0.7 mm, and the outer edge portion is a flat portion 4 without through-holes. The support pallet may be a ceramic plate or the like having a ventilation function. The flat portion 4 is a portion outside the semiconductor wafer W in a state in which the support pallet 2 is superposed on the semiconductor wafer W. Since the semiconductor wafer W is thinned, it is very easy to be cracked or defective. In particular, if the end edge overlaps the through hole, this part is unsupported, so it is easy to break or lack due to the hydraulic pressure of the cutting fluid or the pressure of the grinder. Here, in the embodiment, the edge portion of the semiconductor wafer W is stacked on the flat portion 4. -10- 200525599 (8) In addition, depending on the target thickness of the semiconductor wafer W, a through hole may be formed in the entire support pallet 2. When the semiconductor wafer W and the supporting pallet 2 are pressed by the bonding platform as described above, the arm 8a of the robot arm 8 is inserted on the semiconductor wafer mounting table 6 below the semiconductor wafer W in standby, and the arm 8a is raised. The semiconductor wafer W is transferred onto the arm 8a. Then, an adhesive layer 1 is formed on the upper surface (circuit formation surface) of the semiconductor wafer w. Next, the arm 8a is moved in the horizontal direction, so that the semiconductor wafer w is positioned below the support pallet 2 waiting on the support pallet mounting table 7. After that, the rising arm 8 a 'supports the support plate 2 on the adhesive layer 1 on the upper surface of the semiconductor wafer W', and the multilayer body of the semiconductor wafer w and the support plate 2 is appropriately lifted from the support plate mounting table 7 Up. At this time, the arm 8a passes through a cutout 7a formed in a part of the support plate mounting table 7. Thereafter, the moving arm 8a assembles the laminated body of the semiconductor wafer W and the supporting pallet 2 on the holding table 51 of the bonding apparatus 5. Thereafter, the motor 55 is driven to lower the pressing plate 5 2 so that the pressure between the holding table 5 1 and the pressing plate 5 2 is brought to a state close to 1.2 mm. In addition, during the lamination, air bubbles existing between the semiconductor wafer W and the support plate 2 or gas vaporized by the solvent of the adhesive layer 1 are discharged to the outside through the ceramic sintered body 62. In addition, although the example of the figure shows an example in which the ceramic sintered body is embedded in the pressing plate to perform the exhaust function, the holding table may have a structure capable of performing the exhaust function. In this case, the upper and lower sides of the semiconductor wafer and the supporting plate are reversed. In the above-mentioned embodiment, first, the circuit (semiconductor-11-(9) 200525599 pieces) of the semiconductor wafer W will be coated with the bonding agent, and then the holding table will have the bonding device inside, but first the substrate and support The pallet is carried into the bonding apparatus by individual means, and the substrate and the supporting pallet may be stacked after the pressure in the bonding apparatus is reduced. 5 (a) to (h) are explanatory diagrams of another bonding method of the present invention. (a) For the bonding device composed of the holding table 51 and the pressing plate 52, the state and state of the pressing plate 5 2 whose parallelism has been adjusted is pulled up from the holding table 51, and (b) the air-permeable The support pallet 2 is carried into the bonding apparatus, and is held by the end surface, (c) the wafer W is transferred into the bonding apparatus, (d) the support pallet 2 and the wafer W are superposed in the bonding apparatus, ( e) Load the wafer W that has overlapped with the support plate 2 on the holding table, (f) Lower the top plate to a predetermined interval and press-fit and attach Φ, and place the wafer W and the support The gas between the pallets 2 is exhausted to the outside through a holding table that is in contact with the support pallets 2 and the support pallets or a pressing plate. (G) The top pallets are lifted after the support pallets 2 and the wafer W are attached. (H) Remove the laminated laminate from the laminating device. [Brief description of the drawings] [Fig. 1] An explanatory diagram of a process for thinning a semiconductor wafer including a part of the bonding method of the semiconductor wafer of the present invention -12- (10) (10) 200525599 method. [Fig. 2] An overall view of a bonding platform of the present invention. [Fig. 3] A perspective view of a support plate. [Fig. 4] (a) to (c) are diagrams explaining a procedure for calibrating the parallelism of the holding table and the pressing plate. [FIG. 5] A diagram illustrating another bonding method of the present invention. [Description of main component symbols] · W semiconductor wafer 1 adhesive layer 2 support plate 3 through hole 4 flat portion 5 bonding device 6 semiconductor wafer mounting table 6 a pin 7 support plate mounting table 7a cutout 8 robot arm 8a Arm 1 〇 Grinder 1 1 Cutting belt 12 Frame 1 3 Cutting device -13- (11) 200525599
14臂 15 磁鐵 36鎳 5 1 保持台 5 2按壓板 5 3 底基 54框架 5 5 馬達 56 螺栓 5 7球接頭 58昇降體 5 9 螺絲 60軌道14 arms 15 magnets 36 nickel 5 1 holding table 5 2 pressing plate 5 3 base 54 frame 5 5 motor 56 bolt 5 7 ball joint 58 lifting body 5 9 screw 60 rail
6 1螺帽構件 62陶瓷燒結體 63排氣管 -14-6 1 Nut member 62 Ceramic sintered body 63 Exhaust pipe -14-