JPH081898B2 - Wafer sticker - Google Patents
Wafer stickerInfo
- Publication number
- JPH081898B2 JPH081898B2 JP63277741A JP27774188A JPH081898B2 JP H081898 B2 JPH081898 B2 JP H081898B2 JP 63277741 A JP63277741 A JP 63277741A JP 27774188 A JP27774188 A JP 27774188A JP H081898 B2 JPH081898 B2 JP H081898B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- reinforcing plate
- wax
- heater
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造工程におけるウエハ貼
付装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer sticking apparatus in a semiconductor device manufacturing process.
第３図は従来のウエハ貼付装置を示す断面図であり、
この図において、１はGaAsウエハ、２はこのGaAsウエハ
１に塗布されたワックス、３はこのワックス２によって
GaAsウエハ１に貼り付けられた補強板、４は前記ワック
ス２を軟化させるヒータ、５はこのヒータ４と一体とな
ったべース、６は真空チャンバ、７はこの真空チャンバ
６に設けられた真空口、８は前記ベース５と真空チャン
バ６との間に配置されたＯリング、９は前記補強板３に
圧力を加えるためのダイヤフラム、10はこのダイヤフラ
ム９に圧力を与えるための加圧口である。FIG. 3 is a sectional view showing a conventional wafer sticking apparatus,
In this figure, 1 is a GaAs wafer, 2 is a wax applied to the GaAs wafer 1, and 3 is a wax 2
A reinforcing plate attached to the GaAs wafer 1, 4 is a heater for softening the wax 2, 5 is a base integrated with the heater 4, 6 is a vacuum chamber, and 7 is a vacuum provided in the vacuum chamber 6. A port, 8 is an O-ring arranged between the base 5 and the vacuum chamber 6, 9 is a diaphragm for applying pressure to the reinforcing plate 3, and 10 is a pressurizing port for applying pressure to the diaphragm 9. is there.
従来のウエハ貼付装置は以上のように構成され、GaAs
ウエハ１上にワックス２、その上に補強板３を積層した
状態で加熱し、ダイヤフラム９により加圧しGaAsウエハ
１を補強板３に貼り付けている。したがって、第５図に
示すように、ワックス２と補強板３の接合面19に気泡20
がとり込まれた状態のままで加圧貼り付けが終了するた
め、貼り付け後にGaAsウエハ１をラッピングや研削等の
手段で任意の厚さまで削り加工を行うと、気泡20の発生
している部分が凸状に突出しているため、他の部分より
削り量が多くなることによって薄く仕上がったり、最悪
の場合はGaAsウエハ１が割れたりするといった問題点が
発生する。また、削り加工後の工程において熱が加わっ
たり真空状態内にさらされることによって気泡20の発生
部分がふくれたりするために、GaAsウエハ１の表面に形
成されたデバイスにストレスを与えたり、また、GaAsウ
エハ１の割れを発生したりする等の問題点があった。The conventional wafer sticking device is configured as described above, and
The wax 2 and the reinforcing plate 3 are stacked on the wafer 1 and heated, and the GaAs wafer 1 is attached to the reinforcing plate 3 by applying pressure with the diaphragm 9. Therefore, as shown in FIG. 5, bubbles 20 are formed on the joint surface 19 between the wax 2 and the reinforcing plate 3.
Since the pressure bonding is completed in the state where the air bubbles are taken in, when the GaAs wafer 1 is shaved to a desired thickness by means such as lapping or grinding after the bonding, a portion in which bubbles 20 are generated Since the protrusions are convex, the amount of shaving becomes larger than other portions, resulting in a thin finish, and in the worst case, the GaAs wafer 1 is cracked. In addition, in the process after the shaving process, the part where the bubble 20 is generated swells due to heat being applied or being exposed to a vacuum state, so that stress is applied to the device formed on the surface of the GaAs wafer 1, and There are problems such as cracking of the GaAs wafer 1.
この発明は、上記の問題点を解決するためになされた
もので、気泡を発生することなくウエハと補強板を貼り
付けることができるウエハ貼付装置を得ることを目的と
する。The present invention has been made to solve the above problems, and an object of the present invention is to obtain a wafer sticking apparatus that can stick a wafer and a reinforcing plate without generating bubbles.
この発明に係るウエハ貼付装置は、補強板を保持する
チャック部とを有し、さらに、真空チャンバ内に補強板
とウエハとを貼り付ける直前までウエハと補強板との間
に任意の間隔を確保して保持する保持手段を備えたもの
である。The wafer sticking apparatus according to the present invention has a chuck portion for holding the reinforcing plate, and further secures an arbitrary interval between the wafer and the reinforcing plate until just before the sticking of the reinforcing plate and the wafer in the vacuum chamber. It is provided with a holding means for holding.
この発明においては、ワックスが軟化してウエハと補
強板とを貼り付ける直前までウエハと補強板との間に任
意の間隔を確保した状態で加熱，真空引きを行う構成と
したことから、ウエハを補強板との間に気泡が取り込ま
れた状態で貼り付けられることがなくなる。According to the present invention, since the wax is softened and the wafer and the reinforcing plate are heated and evacuated in a state in which an arbitrary interval is secured between the wafer and the reinforcing plate immediately before the bonding, It will not be stuck in a state where bubbles are taken in between the reinforcing plate.
以下、この発明の一実施例を図面について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例を示すウエハ貼付装置の構
成図で、第３図と同一符号は同一構成部分を示し、11は
前記補強板３を保持するためのチャック部で、補強板３
を加熱するヒータ12が内蔵されている。13は前記ワック
ス２と補強板３との間に任意の間隔を確保するためのば
ねで、チャック部11を保持する保持部となるものであ
り、これらで保持手段14が構成されている。FIG. 1 is a block diagram of a wafer sticking apparatus showing an embodiment of the present invention. The same reference numerals as those in FIG. 3 show the same components, and 11 is a chuck portion for holding the reinforcing plate 3, which is a reinforcing plate. Three
A heater 12 for heating the is built-in. Reference numeral 13 is a spring for ensuring an arbitrary space between the wax 2 and the reinforcing plate 3, which serves as a holding portion for holding the chuck portion 11, and these portions constitute a holding means 14.
次に動作について第４図（ａ），（ｂ）を参照して説
明する。Next, the operation will be described with reference to FIGS. 4 (a) and 4 (b).
第４図（ａ）はGaAsウエハ１にワックス２が塗布され
た状態の断面図であり、これらをまずヒータ４の上に配
置する。次に補強板３をチャック部11により保持し、ヒ
ータ12に接合し、この状態でばね13でチャック部11を保
持することによって、ワックス２と補強板３との間に任
意の間隔を確保する。次に真空チャンバ６をＯリング８
を介してベース５の上に配置する。この状態で真空口７
より真空チャンバ６内の真空引きを行いながらヒータ４
とヒータ12によりワックス２を軟化させるとともに、補
強板３を加熱する。その後，所定の真空度、ワックス２
の軟化温度に到達したならば加圧口10より任意の圧力を
加えダイヤフラム９によってヒータ12を加圧すると、チ
ャック部11,ヒータ12,補強板３が一体となってばね13の
収縮に伴って補強板３がワックス２に接合する。これに
よって、GaAsウエハ１と補強板３がワックス２によって
貼り付けられる。貼り付けが終了すれば、適当な方法で
冷却を行って（例えばヒータ部に冷却配管を配し、冷却
水を流す）ワックス２を固化させた後取り出すと、第４
図（ｂ）のようにGaAsウエハ1,ワックス2,補強板３のよ
うに気泡の発生のない状態で貼り付けられる。FIG. 4A is a sectional view showing a state in which the wax 2 is applied to the GaAs wafer 1, which are first placed on the heater 4. Next, the reinforcing plate 3 is held by the chuck portion 11 and joined to the heater 12, and the chuck portion 11 is held by the spring 13 in this state, so that an arbitrary space is secured between the wax 2 and the reinforcing plate 3. . Next, the vacuum chamber 6 is set to the O-ring 8
Placed on the base 5 via. Vacuum port 7 in this state
While vacuuming the inside of the vacuum chamber 6 more, the heater 4
The heater 12 softens the wax 2 and heats the reinforcing plate 3. After that, a certain degree of vacuum, wax 2
When the softening temperature of is reached, when the heater 12 is pressed by the diaphragm 9 by applying an arbitrary pressure from the pressurizing port 10, the chuck portion 11, the heater 12 and the reinforcing plate 3 are integrated and the spring 13 contracts. The reinforcing plate 3 is bonded to the wax 2. As a result, the GaAs wafer 1 and the reinforcing plate 3 are attached by the wax 2. When the sticking is completed, the wax 2 is cooled by an appropriate method (for example, a cooling pipe is arranged in the heater portion, and cooling water is flown) to solidify the wax 2 and then taken out.
As shown in FIG. 3B, the GaAs wafer 1, the wax 2, and the reinforcing plate 3 are attached in a state where no bubbles are generated.
なお、上記実施例では補強板３のチャック部11、補強
板３を加熱するヒータ12、補強板３を任意の位置に配置
するためにばね13を設けているが、このばね13以外でも
伸縮効果のあるものであればゴム板等でも同様の効果を
奏する。In the above embodiment, the chuck portion 11 of the reinforcing plate 3, the heater 12 for heating the reinforcing plate 3, and the spring 13 for arranging the reinforcing plate 3 at arbitrary positions are provided. The same effect can be obtained with a rubber plate or the like as long as there is such a thing.
また、第２図に示すように、ヒータ12とチャック部11
をダイヤフラム９に一体化しても同様の効果が得られ
る。Further, as shown in FIG. 2, the heater 12 and the chuck portion 11
The same effect can be obtained even if is integrated with the diaphragm 9.
また、上記実施例では、ワックス２をGaAsウエハ１に
塗布して説明しているが、補強板３にワックス２を塗布
しても同様の効果を奏する。また、GaAsウエハ１と補強
板３の上下位置関係が反対であっても同様の効果を奏す
る。In addition, although the wax 2 is applied to the GaAs wafer 1 in the above embodiment, the same effect can be obtained by applying the wax 2 to the reinforcing plate 3. Further, the same effect can be obtained even if the vertical positional relationship between the GaAs wafer 1 and the reinforcing plate 3 is opposite.
以上説明したようにこの発明は、真空チャンバ内に補
強板とウエハとが貼り付けられる直前まで補強板とウエ
ハとの間に任意の間隔を確保して保持する保持手段を備
えたので、気泡の発生もなく安定なウエハ貼り付けが可
能となり、後工程におけるウエハのラッピング，研削等
における厚みの制御性の向上や割れの撲滅が可能とな
り、高出力・高信頼性のデバイスの供給できる。そし
て、補強板の保持をチャック部により機械的に行ってい
るので、真空引きを行ったときでも真空吸収で補強板を
保持するもののように保持力の低下がなく、信頼性を向
上できる効果がある。As described above, the present invention is provided with the holding means that secures and holds an arbitrary interval between the reinforcing plate and the wafer until just before the reinforcing plate and the wafer are attached in the vacuum chamber. Stable wafer attachment is possible without occurrence, and it is possible to improve the controllability of the thickness in the lapping and grinding of the wafer in the subsequent process and eliminate cracks, and it is possible to supply devices with high output and high reliability. Further, since the reinforcing plate is mechanically held by the chuck portion, the holding force does not decrease as in the case of holding the reinforcing plate by vacuum absorption even when vacuuming is performed, and there is an effect that reliability can be improved. is there.
第１図はこの発明の一実施例のウエハ貼付装置を示す断
面図、第２図はこの発明の他の実施例を示すウエハ貼付
装置の断面図、第３図は従来のウエハ貼付装置を示す断
面図、第４図は良好に貼り付けが完了した被貼付物の断
面図、第５図は従来のウエハ貼り付け装置で貼り付けた
気泡が発生している状態の被貼付物の断面図である。 図において、１はGaAsウエハ、２はワックス、３は補強
板、4,12はヒータ、11はチャック部、13はばね、14は保
持手段である。 なお、各図中の同一符号は同一または相当部分を示す。FIG. 1 is a sectional view showing a wafer sticking apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view of a wafer sticking apparatus showing another embodiment of the present invention, and FIG. 3 is a conventional wafer sticking apparatus. A cross-sectional view, FIG. 4 is a cross-sectional view of the pasted object that has been successfully pasted, and FIG. 5 is a cross-sectional view of the pasted object in which bubbles are pasted by a conventional wafer pasting device. is there. In the figure, 1 is a GaAs wafer, 2 is a wax, 3 is a reinforcing plate, 4 and 12 are heaters, 11 is a chuck portion, 13 is a spring, and 14 is a holding means. The same reference numerals in each drawing indicate the same or corresponding parts.
Claims (1)
に、ワックスと補強板とを過熱し所要の加圧力によりウ
エハと前記補強板とを貼り付けるウエハ貼付装置におい
て、ウエハを配置するヒーターがベースに設けられてお
り、補強板を保持するチャック部を備えたヒーターは前
記ウエハを配置するヒーターに向い合わせて設けられて
おり、前記補強板を保持するチャック部を備えたヒータ
ーはベースに固定されたばね機構により前記ウエハと補
強板との間に任意の間隔を確保して保持される保持手段
を備えたことを特徴とするウエハ貼付装置。1. In a wafer sticking apparatus for evacuating a vacuum chamber and heating a wax and a reinforcing plate to stick the wafer and the reinforcing plate with a required pressure, a heater for arranging the wafer is used as a base. A heater having a chuck portion for holding the reinforcing plate is provided facing the heater for arranging the wafer, and a heater having the chuck portion for holding the reinforcing plate is a spring fixed to a base. A wafer sticking device comprising a holding means for holding an arbitrary space between the wafer and the reinforcing plate by a mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277741A JPH081898B2 (en) | 1988-11-02 | 1988-11-02 | Wafer sticker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277741A JPH081898B2 (en) | 1988-11-02 | 1988-11-02 | Wafer sticker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02123726A JPH02123726A (en) | 1990-05-11 |
| JPH081898B2 true JPH081898B2 (en) | 1996-01-10 |
Family
ID=17587679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63277741A Expired - Lifetime JPH081898B2 (en) | 1988-11-02 | 1988-11-02 | Wafer sticker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH081898B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011080929A1 (en) * | 2011-08-12 | 2013-02-14 | Infineon Technologies Ag | Method for manufacturing composite to interconnect two joining parts e.g. semiconductor chip, of power semiconductor module together, involves heating joining parts and connecting unit to predetermined maximum temperature by heating element |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1012578A (en) * | 1996-06-26 | 1998-01-16 | Mitsubishi Electric Corp | Method and apparatus for mounting wafer on support base |
| DE10048881A1 (en) * | 2000-09-29 | 2002-03-07 | Infineon Technologies Ag | Device for planar joining of two wafers e.g. for thin grinding and separation of product-wafer, has product wafer arranged surface-congruently over carrier wafer |
| WO2002056352A1 (en) * | 2001-01-15 | 2002-07-18 | Lintec Corporation | Bonding apparatus, and bonding method |
| DE10242402A1 (en) * | 2002-09-12 | 2004-04-01 | Süss MicroTec Laboratory Equipment GmbH | Device and method for connecting objects |
| DE102004034421A1 (en) | 2004-07-15 | 2006-02-09 | Pac Tech - Packaging Technologies Gmbh | Method and device for mutual contacting of two wafers |
| JP4679890B2 (en) * | 2004-11-29 | 2011-05-11 | 東京応化工業株式会社 | Support plate pasting device |
| JP2007109999A (en) * | 2005-10-17 | 2007-04-26 | Tokyo Electron Ltd | Lamination method |
| JP5485958B2 (en) * | 2011-09-16 | 2014-05-07 | 東京エレクトロン株式会社 | Joining method, program, computer storage medium, joining apparatus and joining system |
| JP5593299B2 (en) * | 2011-11-25 | 2014-09-17 | 東京エレクトロン株式会社 | Joining apparatus, joining system, joining method, program, and computer storage medium |
| CN103489805A (en) * | 2012-06-12 | 2014-01-01 | 苏州美图半导体技术有限公司 | Wafer bonding system |
| US20140224409A1 (en) * | 2013-02-11 | 2014-08-14 | International Rectifier Corporation | Sintering Utilizing Non-Mechanical Pressure |
| JP7005401B2 (en) * | 2018-03-19 | 2022-01-21 | 株式会社エヌ・ピー・シー | Vacuum bonding device |
| DE102018004761B3 (en) | 2018-06-15 | 2019-09-19 | Azur Space Solar Power Gmbh | Joining process of slices |
| DE102018010330B4 (en) | 2018-06-15 | 2024-04-18 | Azur Space Solar Power Gmbh | Joining processes for discs |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57147241A (en) * | 1981-03-05 | 1982-09-11 | Nec Corp | Bonding method for crystal wafer |
| JPS63128734U (en) * | 1987-02-16 | 1988-08-23 |
-
1988
- 1988-11-02 JP JP63277741A patent/JPH081898B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011080929A1 (en) * | 2011-08-12 | 2013-02-14 | Infineon Technologies Ag | Method for manufacturing composite to interconnect two joining parts e.g. semiconductor chip, of power semiconductor module together, involves heating joining parts and connecting unit to predetermined maximum temperature by heating element |
| DE102011080929B4 (en) * | 2011-08-12 | 2014-07-17 | Infineon Technologies Ag | Process for producing a composite and a power semiconductor module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02123726A (en) | 1990-05-11 |
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