JP2001126851A - Heater unit for semiconductor wafer and 1t3 manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heater and a manufacturing method of the same that can heat a semiconductor wafer uniformly and reduce the time up to an optimal processing temperature. SOLUTION: This manufacturing method includes a first process for attaching a metal foil 4 to one surface of polyimide films 3 to be hot pressed, a second process for forming a predetermined heater pattern on the metal foil 4 by etching, and a third process for sandwiching the metal foil between the polyimide films 3 by polymerizing the polyimide films 3 attached with the metal foil 4 having the predetermined heater pattern at the same time with polymerizing the polyimide films 3 on a substrate 2 and for adhering the metal foil 4 which is sealed and attached in vacuum into the layer of polyimide by heating and compressing the polyimide films 3 toward the substrate 2 in vacuum.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor used mainly as a hot plate for heat treatment in a semiconductor wafer process in a semiconductor manufacturing apparatus, a hot plate for glass substrate heat treatment for LCD panels, and other hot plates for industrial precision heat treatment processes. The present invention relates to a heater device for a wafer and a method for manufacturing the same.

[0002]

2. Description of the Related Art Generally, in a semiconductor manufacturing apparatus, a substrate to be processed on a semiconductor wafer is heated by a planar heater device. A conventional planar heater device is configured by sandwiching a planar heating element integrated with a mica (silica) or silicon or the like as an insulator and a metal such as nichrome or iron chrome as a heating element between a metal plate such as aluminum. Have been. In particular, the resist material of the silicon wafer is very sensitive to the heating temperature, and it is essential to minimize the time required to reach the optimum processing temperature. On the other hand, a polyimide heater formed by bonding a metal foil as a heating element in a sandwich shape with a polyimide film,
There is also a planar heater device configured by pressing with a metal plate of aluminum or the like. In such a conventional planar heater device, since the planar heating element is used by pressing it down with a metal plate or the like, when the heater is heated, the heating element and the insulator may be warped due to warpage of the heating element or the metal plate. Adhesion is poor, so that the temperature distribution on the heated surface of the semiconductor wafer varies, which adversely affects the resist material of the semiconductor wafer. In particular, in the case of mica (mica), about 40
In the case of silicon, a thickness of about 800 μm is required. In order to have such a thickness, the insulator and the heating element need to be tightened and pressed by a metal plate via a dozen or more screw members. was there. In addition, in the case of a conventional insulator that is clamped and pressed by a metal plate, a large number of air gaps exist inside the insulator, so that a uniform temperature distribution is not obtained, and the thermal conductivity is also reduced. Further, in addition to the decrease in the adhesion between the heating element and the insulator, the insulator itself used has a large heat insulating effect, so that the rate of temperature rise during heating of the semiconductor wafer is also slow. The present applicant has proposed a heater device and a method for manufacturing the same to improve such conventional disadvantages (Japanese Patent Application No. 11-213422). According to this heater device, the boundary layer and the adhesive layer were successfully eliminated by pressing the metal foil of the heating element onto the polyimide layer coated on the substrate and then overcoating the polyimide.

[0003]

However, the heater device proposed by the present applicant has the following problems. That is, when coating the polyimide on the substrate, it is necessary to perform the coating in several steps in order to prevent the solvent from being left, which requires a long time. In addition, it is difficult to coat the polyimide layer with a uniform thickness because the polyimide layer is coated many times. Further, it is extremely difficult to arrange a complicated and fine heater pattern provided on a metal foil at a predetermined position on a substrate, and a position correcting operation using tweezers or the like is required. Further, a metal foil having a heater pattern must be once formed on another film and transferred onto a polyimide-coated substrate. Such manufacturing problems remain.

Accordingly, the present invention has been made to solve the above-mentioned problems, and it has become possible to simplify a manufacturing process, to uniformly heat a semiconductor wafer, and to realize an optimum processing. An object of the present invention is to provide a heater device for a semiconductor wafer and a method for manufacturing the same, which are improved so that the time required to reach the temperature can be reduced.

[0005]

In order to solve the above-mentioned problems, according to the present invention, a heat-fusible polyimide film 3 is formed on both upper and lower sides of a metal foil 4 having a predetermined heater pattern.
The heating element 5 sandwiched in a sandwich shape by thermocompression bonding is fixed to the substrate 2. The polyimide layer of the heating element 5 on the side of the substrate 2 has a thickness of 50 μm to 100 μm, and the polyimide layer forming the overcoat layer of the heating element 5 has a thickness of about 30 μm. A first step of attaching a metal foil 4 to one side of the heat-fusible polyimide film 3 by hot pressing; a second step of forming a predetermined heater pattern on the metal foil 4 by etching; The fusion-bonded polyimide film 3 is polymerized, and the heat-fusion-type polyimide film 3 on which the metal foil 4 having a predetermined heater pattern is adhered is polymerized to form the metal foil 4 between the heat-fusion-type polyimide films 3. Sandwich it in a sandwich,
The heat-fusible polyimide film 3 is placed on the substrate 2 in a vacuum.
And a third step of fixing the metal foil 4 vacuum-sealed in the polyimide layer to the substrate 2 by heat-pressing to the side, and a heater device for a semiconductor wafer. Three
A first step of attaching a metal foil 4 to one side of a heat-fusible polyimide film 3 having a thickness of about 0 μ by hot pressing, and a second step of forming a predetermined heater pattern on the metal foil 4 by etching. A heat-fusible polyimide film 3 having a thickness in the range of 50-100 μm is polymerized on a substrate, and the heat-fusible polyimide film 3 on which the metal foil 4 having a predetermined heater pattern is adhered is polymerized. A metal foil 4 is sandwiched between the heat-fusible polyimide films 3 in a sandwich form, and these heat-fusible polyimide films 3 are heated and pressed to the substrate side 2 at a temperature of 350 ° C. in a vacuum to obtain a polyimide. The metal foil 4 vacuum-sealed in the layer is
And a third step of fixing the heater device on a semiconductor wafer.

In the heater device for a semiconductor wafer and the method of manufacturing the same according to the present invention, a heating element 5 having a predetermined heater pattern is sandwiched by a heat-fusible polyimide film 3 from both upper and lower sides. By holding in a shape and thermocompression bonding in vacuum,
Simplify the manufacturing process and form a uniform and thin insulating layer without any adhesive layer, boundary layer, or air layer,
A thin heating element 5 having good heat conductivity is formed. Moreover, it is possible to shorten the recovery time until the temperature reaches the predetermined optimum processing temperature.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
Is a heater device used for heating a substrate to be processed on a semiconductor wafer in a semiconductor manufacturing apparatus. This heater device 1 uses a metal material such as aluminum or ceramics as shown in FIG. On the substrate 2, about 50
A heat-fusible polyimide film 3 having a thickness in the range of μ to 100 μ is provided, and a metal foil 4 having a predetermined heater pattern is adhered thereon. Is polymerized at about 350 ° C (50k
g / cm3) Fig. 2
(B). By utilizing the adhesive effect of the heat-resistant polymer layer 3 itself, the vacuum-sealed metal foil 4 is fixed to the substrate 2 in the polyimide layer.

The metal foil 4 is formed by fusing one side of the heat-fusible polyimide film 3 with a hot press such as a 350 ° C. hot roll. A pattern has been formed (see FIG. 1C).

As described above, the metal foil 4 is sandwiched from both upper and lower sides by the heat-resistant polymer layer 3 and firmly thermocompression-bonded, and the heating element 5 having a predetermined heater pattern is thin and has good heat conductivity. It is formed on the substrate 2 so that By doing so, the recovery time required for the conventional heater device 1 to reach the optimum processing temperature of the semiconductor wafer of 120 ° C. takes about 50 to 60 seconds, but the heater device 1 according to the present embodiment has a recovery time of 30 to 40 seconds. Seconds. Further, when the semiconductor wafer is heated to 120 ° C. by the heater device 1, the set temperature is conventionally ±
Temperature fluctuations of 0.15 ° C. can be suppressed to ± 0.1 ° C., and variations in semiconductor products that affect dynamic characteristics when a semiconductor wafer is placed on the heater device 1 are minimized. There are things that can be stopped.

Next, an example of a manufacturing method for the embodiment configured as described above will be described. First, a heat-fusible polyimide film 3 as an insulator is adhered on a substrate 2 made of metal such as aluminum with a thickness in the range of about 50 μm to 100 μm (see FIGS. 1A and 1B). On the other hand, a metal foil 4 is attached to a heat-fusible polyimide film 3 having a thickness of about 30 μm, and a predetermined heater pattern is formed by etching (see FIG. 1C). Next, the metal foil 4 having a predetermined heater pattern is polymerized on the heat-fusible polyimide film 3 provided on the substrate 2 together with the heat-fusible polyimide film 3 (see FIG. 2A). Furthermore, in a vacuum,
Heat and pressure bonding is performed by a hot press at about 350 ° C., and the metal foil 4 is vacuum-sealed in the polyimide layer using the adhesive effect of the polyimide itself, and is also fixed by welding to the substrate 2 (FIG. 2). (C)).

It should be noted that the present invention is not limited to the above-described embodiment, but includes improvements, modifications, etc. within a scope that can achieve the object of the present invention.

[0012]

Since the present invention is constructed as described above, a metal foil 4 having a predetermined heater pattern is sandwiched from both upper and lower sides by a heat-fusible polyimide film 3 and heated in a vacuum. Since the pressurized heating element 5 is provided on the substrate 2, the manufacturing process can be simplified, and a heater device having no boundary layer such as an adhesive layer or an air layer can be provided. Further, since the metal foil 4 is vacuum-sealed with the polyimide layer, the semiconductor wafer can be heated uniformly, and the resist material of the semiconductor wafer is not adversely affected. Moreover, the time required to reach the optimum processing temperature can be shortened.

In particular, the use of the heat-fusible polyimide film 3 facilitates the production process, realizes production without an interstitial air layer, is uniform, has no variation, is thin, has mechanical strength and heat conduction. An insulator layer having high property can be formed.

The polyimide layer of the heating element 5 on the side of the substrate 2 is
Since the polyimide layer forming the overcoat layer of the heating element 5 has a thickness of about 30 μm and has a thickness of about 50 μm to 100 μm, it has good thermal conductivity without variation in temperature distribution. A body layer can be formed.

A first step of attaching a metal foil 4 to one side of the heat-fusible polyimide film 3 by hot pressing; a second step of forming a predetermined heater pattern on the metal foil 4 by etching; 2 and a heat-fusible polyimide film 3 on which the metal foil 4 having a predetermined heater pattern is adhered. Foil 4
Are sandwiched in a sandwich shape, and the heat-fusible polyimide film 3 is heated and pressed against the substrate 2 in a vacuum to fix the metal foil 4 vacuum-sealed in the polyimide layer to the substrate 2. Therefore, a heater device suitable as a hot plate for an industrial precision heat treatment process can be provided. Moreover, it has become possible to provide a heater device having no boundary layer such as an adhesive layer or an air layer. Further, a thin insulating layer having no gap air layer and having no variation in temperature distribution can be formed, and a thin heating element having good heat conductivity can be formed. Further, it is possible to shorten the recovery time required to reach a predetermined optimum processing temperature.

First, a metal foil 4 is stuck on one side of a heat-fusible polyimide film 3 having a thickness of about 30 μm by hot pressing.
And a second step of forming a predetermined heater pattern on the metal foil 4 by etching.
The heat-fusible polyimide film 3 having a predetermined heater pattern is polymerized while the heat-fusible polyimide film 3 having a predetermined heater pattern is adhered. A metal foil 4 is sandwiched between them, and the heat-fusible polyimide film 3 is heated and pressed to the substrate side 2 at a temperature of 350 ° C. in a vacuum to form a metal foil vacuum-sealed in the polyimide layer. Since the method for manufacturing a heater device for a semiconductor wafer includes the third step of welding and fixing the substrate 4 to the substrate 2, a heater device particularly suitable for heat treatment in a semiconductor wafer process can be provided. Further, it has become possible to provide a heater device having no boundary layer such as an adhesive layer and an air layer. Further, a thin insulator layer having no gap air layer and having no variation in temperature distribution can be formed, and a thin heating element having good heat conductivity can be formed. Moreover, it is possible to shorten the recovery time until the temperature reaches the predetermined optimum processing temperature.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a manufacturing method of the present invention, showing a first step from a separated state in FIG. 1A to a fused state in FIG.
Indicates a second step in which a heater pattern is formed.

FIG. 2 is a schematic cross-sectional view showing a third step of the manufacturing method of the present invention, wherein (a) shows a state before polymerization, and (b) shows a heater device formed by pressurization.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heater apparatus 2 Substrate 3 Heat fusion type polyimide film 4 Metal foil 5 Heating element

Claims (4)

[Claims] 1. A semiconductor wafer wherein a heating element which is sandwiched on both upper and lower sides of a metal foil having a predetermined heater pattern by a heat-fusible polyimide film and thermocompression-bonded in vacuum is fixed to a substrate. Heater device. 2. The polyimide layer of the heating element on the substrate side has a thickness of 50 μm to 100 μm, and the polyimide layer forming the overcoat layer of the heating element has a thickness of 30 μm.
2. The heater device for a semiconductor wafer according to claim 1, wherein the heater device has a value of about μ. 3. A first step of attaching a metal foil to one side of the heat-fusible polyimide film by hot pressing, a second step of forming a predetermined heater pattern on the metal foil by etching, and While polymerizing the heat-fusible polyimide film, the heat-fusible polyimide film to which the metal foil having the predetermined heater pattern is adhered is polymerized to sandwich the metal foil between the heat-fusible polyimide films in a sandwich manner. A third step of attaching the heat-fusible polyimide film to the substrate side in a vacuum under heat and pressure to fix the metal foil vacuum-sealed in the polyimide layer to the substrate. A method for manufacturing a heater device for a wafer. 4. A first step of attaching a metal foil to one surface of a heat-fusible polyimide film having a thickness of about 30 μ by hot pressing, and a second step of forming a predetermined heater pattern on the metal foil by etching. And the substrate has a thickness of 50-100
While polymerizing the heat-fusible polyimide film having a range of μ, the heat-fusible polyimide film to which the metal foil having the predetermined heater pattern is adhered is polymerized to form a metal foil between the heat-fusible polyimide films. By sandwiching the heat-fusible polyimide film in a vacuum at a temperature of 350 ° C. at a temperature of 350 ° C. on the substrate side, thereby fixing the metal foil vacuum-sealed in the polyimide layer to the substrate. A method of manufacturing a heater device for a semiconductor wafer, comprising three steps.