CN1797760A - 微型引线框架塑料封装的连接布置结构 - Google Patents
微型引线框架塑料封装的连接布置结构 Download PDFInfo
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Abstract
本发明提供一种微型引线框架塑料(MLP)封装(20)的连接布置结构,包括一桨状物(28),被构造成与电路板(24)连接;一第一接地焊盘(26)和一第二接地焊盘(26),它们每一个都与桨状物(28)连接。第一和第二接地焊盘(26,26)与桨状物(28)一起被构造成在电路板(24)和安装到桨状物(28)上的芯片(40)之间提供连续接地。
Description
技术领域
本发明涉及微型引线框架塑料(MLP)封装,特别是涉及用于MLP封装的连接布置结构(connection arrangement)。
背景技术
在射频(RF)即微波和毫米波(millimeter-wave)频率时,塑料封装因为低成本和易制造而被优选。例如,引线框架与使用在球格阵列封装的基板相比成本更低。然而,随着操作频率的提高,对元件/电路的封装效果在所有RF特性中变得愈加重要。除了好的电特性外,当设计封装时,对散热通道、空间要求或限制、环境保护和部件的可靠性的考虑也很重要。
现在,塑料封装的应用限制在低频应用上,例如,用于最大频率约5GHz。这主要是由于与芯片-封装-母板转换的接合线不连续有关的寄生现象(如,大的电感)。这些寄生现象在更高频率时尤为严重,例如,在24GHz。该寄生现象,特别是在高频区也因桨状物和接地焊盘的使用而产生,这些接地焊盘没有被连接且因此不能提供连续接地。这些寄生现象导致高嵌入损失、低阻抗匹配以及在所需频带上的大的响应。芯片-封装-母板转换RF性能(behavior)还导致随频率以大的功率降。
寄生效应有时通过自身附加匹配短柱(matching stubs)来克服,例如,单片微波集成电路(MMIC)芯片自身。然而,由于在芯片上的空间通常非常有限,实施这种芯片上的匹配可能会很复杂,也可能很昂贵。此外,采用匹配短柱,频率带宽是非常有限的,使得这些结构对于超宽带系统如高分辨雷达(HRR)是不可接受的。其它被人们所认知的解决方案包括利用在芯片上用于匹配放大器的寄生现象。然而,这些解决方案执行起来也会很困难。
MLP封装的倒装芯片形式被人们所熟知用于解决运行频率问题。在这些封装中,凸起小片(die)被倒插到引线框架桨状物(paddle)上,然后利用标准的塑料封装安装工艺被模塑。倒装芯片设计减小信号电感,因为与焊接引线(wire bond or bond wire)相比其相互连接会更短(例如:0.1mm比1mm)。然而,制造这样的倒装芯片的工艺不能满足大批量的大规模生产。
这样,已知的MLP封装既不能满足在高频运行的要求又很复杂且在执行时很昂贵。
发明内容
本发明提供一种用于微型引线框架塑料(MLP)封装的连接布置结构,包括被设置成连接到线路板的桨状物,以及每一个均连接到该桨状物的第一接地焊盘和第二接地焊盘。第一和第二接地焊盘和桨状物一起被设置成在线路板和安装到桨状物的芯片之间提供连续接地。
本发明还提供一种微型引线框架塑料(MLP)封装板,包括被设置成利用多个通道来接地的桨状物,RF电路、以及连接到桨状物的第一接地焊盘和第二接地焊盘。第一和第二接地焊盘与桨状物一起被设置成在RF电路和安装到桨状物的芯片之间提供连续接地通路。
本发明还提供一种将微型引线框架塑料(MLP)封装连接到电路板的方法。该方法包括将桨状物设置在电路板上,并且将电路板的第一接地焊盘和第二接地焊盘构造成连接到桨状物,以在电路板和安装到焊盘的芯片之间提供连续接地。
附图说明
图1是用于实施本发明各种实施例的微型引线框架(MLP)封装的方框图。
图2是根据本发明的一个实施例的安装在线路板上的MLP封装的透视图。
图3是根据本发明的实施例用于MLP封装的电路板设计图的透视图。
图4是根据本发明的实施例的安装到线路板上的MLP封装的前视截面图。
图5是根据本发明的实施例的安装到线路板上的MLP的平面示意图。
图6是根据本发明的另一个实施例用于MLP封装的电路板设计图的透视图。
图7是根据本发明的另一个实施例的安装到电路板上的MLP封装的前视截面图。
具体实施方式
本发明的各种实施例都提供了一种连接布置结构,特别是,用于与微型引线框架塑料(MLP)封装,包括与毫米波MLP封装一起使用的宽带转换(wide-band transitions)。这些封装也称为QFN(Quad Flat No-Lead,方形扁平无引线)封装。各种实施例包括(i)匹配电路或者设置要么在连接有MLP封装的电路板上要么在引线框架自身上,以及(ii)一种引线框架结构用来补偿焊接引线电感。通常,如于此详细描述的,两个焊盘,更确切地说,在母板上的两个金属接地焊盘以共面结构连接接地桨状物和RF焊盘周围的引线。这种设置在MLP封装内的芯片(例如,集成电路(IC)芯片)的RF信号和在母板(例如,RF板)上的RF信号之间提供了连续接地,其中带有芯片的MLP封装安装在母板上。
更具体地,如图1所示,本发明的各种实施例提供一种连接布置结构,用于在具有多条引线22(例如,铜引线)的MLP封装20内安装芯片。需要说明的是,MLP封装20的尺寸和形状可以随着希望和需要修改,例如,根据固定于此的芯片的尺寸和形状或者特殊应用或者使用MLP封装20的系统。此外,被设置的引线22的数量和定位可以随着希望和需要修改,例如,根据安装在MLP封装20内的芯片。
更确切地说,如图2和3所示,在示范性实施例中,提供一种连接布置结构,用于将被安装到电路板,例如,母板24上的MLP封装20。在这个实施例中,两个接地焊盘26(图3所示更清楚),例如在母板24上的铜焊盘,通过接地焊盘44(图3所示更清楚)连接到桨状物28(例如铜板),有时称为接地桨状物上。这样,桨状物28可以采用焊接工艺被安装到,例如接地焊盘44的顶部。多个通道30(例如铜连接)可以通过母板24被设置在,例如接地焊盘44下方,用来在桨状物28和母板24的接地板之间提供公用接地。通道30可以是中空体和被镀以金属或者被填满金属。通道30也可以提供导热通路,例如用于为MLP封装20中和集成电路(IC)芯片产生的热。
接地焊盘26和桨状物28可以由任何适合的材料构成,并且以任何适合的方式设置成提供接地连接,例如用铜迹线。需要说明的是,通道30的数量和尺寸可以随着希望和需要修改,例如根据桨状物28的尺寸和形状。接地焊盘26通过桨状物28和通道30将引线22中的两条连接到母板24以提供连续接地。在各种实施例中,接地焊盘26可以以任何适合的方式与母板24上的焊盘28连接或成为一体,从而提供连续接地。
需要说明的是,图2和3只示出MLP封装20的一部分。因此,其它的引线22等可以作为MLP封装20的部件提供。
RF线32(例如铜迹线、微条线等)或其它RF电路从母板24的边缘34延伸到由RF线32和接地焊盘26定义的共面部分36。此外,如图2和4所示更清楚,RF线32利用连接线35通过MLP封装20的引线22连接到MLP封装20内的芯片40上。如图4和7所示,芯片40(例如GaAs IC、SiGe IC或CMOS IC)可以以所知的任何方式安装到桨状物28。可以给芯片40提供小片涂覆42以保护该芯片,例如不受环境破坏。另外,所示的桨状物28采用,例如焊接工艺,被安装到母板24的焊盘44上。需要说明的是,母板24可以由任何合适的材料或基板构成。
再参照图3,设置接地焊盘26以及由RF线32和每个接地焊盘26之间的间隙38提供的空间的形状和尺寸,从而在共面部分36产生的电容通常与由焊接引线35生成的电感相匹配(如图4和7所示)。例如,可以提供约0.1016mm(4mil)的间隙38从而在30GHz以上的频带提供非常好的阻抗匹配。
如图6和7所示,在本发明的另一个实施例中,代替如图2至5所示的在母板24上提供芯片-封装-板相互连接,仅提供到引线框架(例如直接到引线22)的连接。这种设置与图2至5所示类似,然而,在这个实施例中,引线22直接连接到桨状物28上,这样在引线22和桨状物28之间不设置间隙46(如图4所示)。然而,在这个实施例中,在RF线32和接地焊盘44之间有间隙65。
在操作中,在芯片40上的RF信号和母板24上的RF信号之间提供连续接地。更确切地说,接地焊盘26到桨状物28的直接连接提供这种连续的接地(即,连续的接地通路):从接地焊盘26到桨状物28和穿过通道30而从RF线32到母板24上的接地。此外,RF线32和接地焊盘26的共面设置产生电容以匹配MLP封装20中的连接线35产生的电感。在共面部分36中的RF线32和接地焊盘26的形状和设置以及在共面部分36中的RF线32和接地焊盘26之间的间隙38的尺寸如于此描述的进行设置以提供匹配。
这样,本发明的各种实施例都提供了芯片-封装-母板转换,尤其是,在高频范围内采用共面部分的接地设置和匹配结构留出MLP封装的改进操作,更确切地讲,塑料MLP封装。该结构通过在安装在MLP封装中的芯片上的RF线和母板上的RF线之间提供连续接地为连接线的断续提供了补偿,其中MLP封装安装在母板上。从而改进了母板和MLP封装之间的转换的散射参数,并且降低了嵌入损失。此外,还提供了在不同频率范围的恒定功率输出。
使用本发明的各种实施例,都可以提供可用于毫米波频率的MLP封装。例如,本发明的各种实施例都可以实施到构造用于超宽带频率系统的24GHzMLP封装。此外,因为这些转换的带宽很宽,根据本发明各种实施例构造的MLP封装可以用于不同的应用上,例如光电系统。
Claims (20)
1、一种用于微型引线框架塑料封装(20)的连接布置结构,该连接布置结构包括:
一桨状物(28),被构造成与电路板(24)连接;和
一第一接地焊盘(26)和一第二接地焊盘(26),它们每一个均连接到该桨状物(28)上,并且与该桨状物(28)一起被构造成在该电路板(24)和安装到桨状物(28)的芯片(40)之间提供连续接地。
2、如权利要求1所述的连接布置结构,还包括在该电路板(24)上的一RF线(32)和在芯片(40)上的一RF线,其中在该线路板(24)上的该RF线(32)和在该芯片(40)上的该RF线之间提供了连续接地。
3、如权利要求1所述的连接布置结构,还包括多条引线(22),至少一第一引线被构造成与该第一接地焊盘(26)连接,并且至少一第二引线被构造成与该第二接地焊盘(26)连接。
4、如权利要求1所述的连接布置结构,还包括在该电路板(24)上的一RF线(32),其中该RF线(32)与第一和第二接地焊盘(26,26)被设置成共面结构。
5、如权利要求1所述的连接布置结构,还包括在该线路板(24)上的一RF线(32),以及至少一根连接线(35)来连接芯片(40)和该线路板(24),其中该RF线(32)与第一和第二接地焊盘(26,26)被构造成产生一电容以匹配由该至少一根连接线(35)产生的电感。
6、如权利要求5所述的连接布置结构,还包括在每一个该第一和第二接地焊盘(26,26)与该RF线(32)之间的一间隙(38)。
7、如权利要求5所述的连接布置结构,还包括在该桨状物(28)和该RF线(32)之间的一间隙(65)。
8、如权利要求1所述的连接布置结构,还包括在该桨状物下方的一第三接地焊盘(44),其中该第一和第二接地焊盘(26,26)通过该第三接地焊盘(44)与该桨状物(28)连接。
9、如权利要求1所述的连接布置结构,其中该第一和第二接地焊盘(26,26)通过MLP封装(20)的引线与桨状物(28)连接。
10、如权利要求1所述的连接布置结构,其中该第一和第二焊盘(26,26)中的每一个都与第三接地焊盘(44)一体成形在该线路板(24)上用于与该桨状物(28)连接。
11、如权利要求1所述的连接布置结构,还包括在该桨状物(28)和该MLP封装(22)的引线(22)之间的一间隙(46),其中连接线(35)连接该引线和该桨状物。
12、如权利要求1所述的连接布置结构,还包括在该线路板(24)上的一RF线,其中该RF线(32)与该第一和第二接地焊盘(26,26)被构造成提供匹配电路。
13、一种微型引线框架塑料封装板,包括:
一桨状物(28),被构造成利用多个通道(30)接地;
一RF电路;以及
一第一接地焊盘(26)和一第二接地焊盘(26),通过一第三接地焊盘(44)与该桨状物连接,并且与桨状物(28)一起被构造成在该RF电路和安装到该桨状物(28)的芯片之间提供连续接地通道。
14、如权利要求13所述的微型引线框架塑料封装板,其中该RF电路与第一和第二接地焊盘(26,26)被构造成产生一电容以匹配在该微型引线框架塑料封装(20)内产生的电感。
15、如权利要求13所述的微型引线框架塑料封装板,还包括连接该RF电路和在该微型引线框架塑料封装(20)内的芯片(40)的一连接线(35)。
16、如权利要求15所述的微型引线框架塑料封装板,其中该RF电路与第一和第二接地焊盘(26,26)被构造成产生一电容以匹配由该连接线(35)产生的电感。
17、如权利要求13所述的微型引线框架塑料封装板,其中该RF电路与第一和第二接地焊盘(26,26)被构造成共面设置。
18、如权利要求13所述的微型引线框架塑料封装板,其中该微型引线框架塑料封装(20)包括引线(22),并且该接地焊盘通过该微型引线框架塑料封装(20)的引线框架与引线(22)连接。
19、一种连接微型引线框架塑料封装(20)和电路板(24)的方法,该方法包括:
在该电路板(24)上设置桨状物(28);和
构造该电路板的第一接地焊盘(26)和第二接地焊盘(26)以连接该桨状物(28),从而在该电路板(24)和安装到该桨状物上的芯片(40)之间提供连续接地。
20、如权利要求19所述的方法,还包括构造与该第一和第二接地焊盘(26,26)共面设置形成在该电路板(24)上的一RF电路板。
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US8399968B2 (en) * | 2005-11-18 | 2013-03-19 | Stats Chippac Ltd. | Non-leaded integrated circuit package system |
TWI302813B (en) * | 2006-01-11 | 2008-11-01 | Via Tech Inc | Circuit board and electronic assembly |
US8003443B2 (en) | 2006-03-10 | 2011-08-23 | Stats Chippac Ltd. | Non-leaded integrated circuit package system with multiple ground sites |
US8062934B2 (en) * | 2006-06-22 | 2011-11-22 | Stats Chippac Ltd. | Integrated circuit package system with ground bonds |
TWI315567B (en) * | 2006-11-10 | 2009-10-01 | Via Tech Inc | Electronic assembly and circuit board |
US7768105B2 (en) * | 2007-01-24 | 2010-08-03 | Fairchild Semiconductor Corporation | Pre-molded clip structure |
US7755173B2 (en) * | 2007-06-26 | 2010-07-13 | M/A-Com Technology Solutions Holdings, Inc. | Series-shunt switch with thermal terminal |
US8664038B2 (en) * | 2008-12-04 | 2014-03-04 | Stats Chippac Ltd. | Integrated circuit packaging system with stacked paddle and method of manufacture thereof |
US20110115063A1 (en) * | 2009-11-18 | 2011-05-19 | Entropic Communications, Inc. | Integrated Circuit Packaging with Split Paddle |
US10271448B2 (en) * | 2012-08-06 | 2019-04-23 | Investar Corporation | Thin leadframe QFN package design of RF front-ends for mobile wireless communication |
US9515032B1 (en) | 2015-08-13 | 2016-12-06 | Win Semiconductors Corp. | High-frequency package |
US10128170B2 (en) | 2017-01-09 | 2018-11-13 | Silanna Asia Pte Ltd | Conductive clip connection arrangements for semiconductor packages |
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JPS5386576A (en) * | 1977-01-10 | 1978-07-31 | Nec Corp | Package for semiconductor element |
US4975761A (en) * | 1989-09-05 | 1990-12-04 | Advanced Micro Devices, Inc. | High performance plastic encapsulated package for integrated circuit die |
US5153379A (en) * | 1990-10-09 | 1992-10-06 | Motorola, Inc. | Shielded low-profile electronic component assembly |
US5557144A (en) * | 1993-01-29 | 1996-09-17 | Anadigics, Inc. | Plastic packages for microwave frequency applications |
US5422664A (en) * | 1993-06-25 | 1995-06-06 | Xerox Corporation | Method and apparatus for maintaining constant drop size mass in thermal ink jet printers |
KR960000706B1 (ko) * | 1993-07-12 | 1996-01-11 | 한국전기통신공사 | 전력소자용 플라스틱 패키지 구조 및 그 제조방법 |
US6061251A (en) * | 1997-09-08 | 2000-05-09 | Hewlett-Packard Company | Lead-frame based vertical interconnect package |
JP4623850B2 (ja) * | 2001-03-27 | 2011-02-02 | 京セラ株式会社 | 高周波半導体素子収納用パッケージおよびその実装構造 |
US6791166B1 (en) * | 2001-04-09 | 2004-09-14 | Amkor Technology, Inc. | Stackable lead frame package using exposed internal lead traces |
US6828658B2 (en) * | 2002-05-09 | 2004-12-07 | M/A-Com, Inc. | Package for integrated circuit with internal matching |
CN1751412A (zh) * | 2003-02-21 | 2006-03-22 | 松下电器产业株式会社 | 高频电路 |
US7026664B2 (en) * | 2003-04-24 | 2006-04-11 | Power-One, Inc. | DC-DC converter implemented in a land grid array package |
TWI249832B (en) * | 2003-11-10 | 2006-02-21 | Siliconware Precision Industries Co Ltd | Lead frame and semiconductor package with the lead frame |
US7261793B2 (en) * | 2004-08-13 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | System and method for low temperature plasma-enhanced bonding |
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JP2006157011A (ja) | 2006-06-15 |
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