CN1790138A - 显示装置及其制造方法 - Google Patents
显示装置及其制造方法 Download PDFInfo
- Publication number
- CN1790138A CN1790138A CN 200410095724 CN200410095724A CN1790138A CN 1790138 A CN1790138 A CN 1790138A CN 200410095724 CN200410095724 CN 200410095724 CN 200410095724 A CN200410095724 A CN 200410095724A CN 1790138 A CN1790138 A CN 1790138A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- film
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- tft
- display device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000004380 ashing Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 208
- 239000010409 thin film Substances 0.000 description 89
- 239000010410 layer Substances 0.000 description 57
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 239000011229 interlayer Substances 0.000 description 26
- 239000004973 liquid crystal related substance Substances 0.000 description 25
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 16
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 16
- 229910004444 SUB1 Inorganic materials 0.000 description 16
- 238000005530 etching Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000000717 retained effect Effects 0.000 description 8
- 101000620451 Homo sapiens Leucine-rich glioma-inactivated protein 1 Proteins 0.000 description 7
- 101000620458 Homo sapiens Leucine-rich repeat LGI family member 2 Proteins 0.000 description 7
- 102100022275 Leucine-rich glioma-inactivated protein 1 Human genes 0.000 description 7
- 102100022270 Leucine-rich repeat LGI family member 2 Human genes 0.000 description 7
- 229910004438 SUB2 Inorganic materials 0.000 description 6
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 101150018444 sub2 gene Proteins 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229940090044 injection Drugs 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 208000031481 Pathologic Constriction Diseases 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000036262 stenosis Effects 0.000 description 3
- 208000037804 stenosis Diseases 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910015202 MoCr Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001029050 | 2001-02-06 | ||
JP029050/2001 | 2001-02-06 | ||
JP019751/2002 | 2002-01-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021190054A Division CN1185533C (zh) | 2001-02-06 | 2002-02-06 | 显示装置及其制造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100943843A Division CN100463225C (zh) | 2001-02-06 | 2002-02-06 | 显示装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1790138A true CN1790138A (zh) | 2006-06-21 |
CN100523966C CN100523966C (zh) | 2009-08-05 |
Family
ID=36788092
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100943843A Expired - Lifetime CN100463225C (zh) | 2001-02-06 | 2002-02-06 | 显示装置及其制造方法 |
CNB2004100957245A Expired - Lifetime CN100523966C (zh) | 2001-02-06 | 2002-02-06 | 显示装置及其制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100943843A Expired - Lifetime CN100463225C (zh) | 2001-02-06 | 2002-02-06 | 显示装置及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN100463225C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104505368A (zh) * | 2014-12-24 | 2015-04-08 | 昆山国显光电有限公司 | 一种接触孔刻蚀工艺、有机发光显示器件及显示装置 |
CN106935654A (zh) * | 2015-12-31 | 2017-07-07 | 三星显示有限公司 | 用于显示设备的薄膜晶体管 |
WO2017181464A1 (zh) * | 2016-04-18 | 2017-10-26 | 武汉华星光电技术有限公司 | Tft阵列基板及其制作方法 |
EP3242319A4 (en) * | 2014-12-30 | 2019-03-06 | BOE Technology Group Co., Ltd. | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND MATRIX SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME |
CN110071137A (zh) * | 2018-01-23 | 2019-07-30 | 创王光电股份有限公司 | 发光装置及其制造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111244168B (zh) * | 2020-01-22 | 2023-04-07 | 合肥鑫晟光电科技有限公司 | 一种显示基板及其制备方法、显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190933B1 (en) * | 1993-06-30 | 2001-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Ultra-high resolution liquid crystal display on silicon-on-sapphire |
TW297142B (zh) * | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
JP3274081B2 (ja) * | 1997-04-08 | 2002-04-15 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法および液晶表示装置の製造方法 |
JP3679567B2 (ja) * | 1997-09-30 | 2005-08-03 | 三洋電機株式会社 | 薄膜トランジスタの製造方法 |
TW388087B (en) * | 1997-11-20 | 2000-04-21 | Winbond Electronics Corp | Method of forming buried-channel P-type metal oxide semiconductor |
-
2002
- 2002-02-06 CN CNB2006100943843A patent/CN100463225C/zh not_active Expired - Lifetime
- 2002-02-06 CN CNB2004100957245A patent/CN100523966C/zh not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104505368A (zh) * | 2014-12-24 | 2015-04-08 | 昆山国显光电有限公司 | 一种接触孔刻蚀工艺、有机发光显示器件及显示装置 |
EP3242319A4 (en) * | 2014-12-30 | 2019-03-06 | BOE Technology Group Co., Ltd. | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND MATRIX SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME |
CN106935654A (zh) * | 2015-12-31 | 2017-07-07 | 三星显示有限公司 | 用于显示设备的薄膜晶体管 |
WO2017181464A1 (zh) * | 2016-04-18 | 2017-10-26 | 武汉华星光电技术有限公司 | Tft阵列基板及其制作方法 |
CN110071137A (zh) * | 2018-01-23 | 2019-07-30 | 创王光电股份有限公司 | 发光装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100523966C (zh) | 2009-08-05 |
CN1881617A (zh) | 2006-12-20 |
CN100463225C (zh) | 2009-02-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI DISPLAY CO., LTD. Free format text: FORMER OWNER: HITACHI,LTD. Effective date: 20111129 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Co-patentee before: IPS pioneer support society Patentee before: Hitachi Displays, Ltd. Address after: Chiba County, Japan Co-patentee after: IPS Pioneer Support Society Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Patentee before: Hitachi Displays, Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20111129 Address after: Chiba County, Japan Patentee after: Hitachi Displays, Ltd. Address before: Tokyo, Japan Patentee before: Hitachi, Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: APAN DISPLAY EAST, INC. Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD. Owner name: JAPAN DISPLAY, INC. Free format text: FORMER NAME: APAN DISPLAY EAST, INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Japan Display East Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. Address after: Chiba County, Japan Patentee after: Japan Display East Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Hitachi Displays, Ltd. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: JAPAN DISPLAY Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20060621 Assignee: BOE TECHNOLOGY GROUP Co.,Ltd. Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd. Contract record no.: 2013990000688 Denomination of invention: Ion illuminating display device and mfg. method Granted publication date: 20090805 License type: Common License Record date: 20131016 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20090805 |