CN1763617A - 金属线及制造方法、基板及制造方法和显示装置 - Google Patents

金属线及制造方法、基板及制造方法和显示装置 Download PDF

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Publication number
CN1763617A
CN1763617A CNA200510118119XA CN200510118119A CN1763617A CN 1763617 A CN1763617 A CN 1763617A CN A200510118119X A CNA200510118119X A CN A200510118119XA CN 200510118119 A CN200510118119 A CN 200510118119A CN 1763617 A CN1763617 A CN 1763617A
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CN
China
Prior art keywords
metal
layer
oxide layer
metal oxide
metal level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200510118119XA
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English (en)
Chinese (zh)
Inventor
金杨善
金泽熙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1763617A publication Critical patent/CN1763617A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNA200510118119XA 2004-10-21 2005-10-20 金属线及制造方法、基板及制造方法和显示装置 Pending CN1763617A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040084526A KR20060035164A (ko) 2004-10-21 2004-10-21 금속 배선과 이의 제조 방법과, 이를 구비한 어레이 기판및 이의 제조 방법과, 이를 구비한 표시 패널
KR84526/04 2004-10-21

Publications (1)

Publication Number Publication Date
CN1763617A true CN1763617A (zh) 2006-04-26

Family

ID=36205428

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200510118119XA Pending CN1763617A (zh) 2004-10-21 2005-10-20 金属线及制造方法、基板及制造方法和显示装置

Country Status (5)

Country Link
US (1) US20060086979A1 (enExample)
JP (1) JP2006119564A (enExample)
KR (1) KR20060035164A (enExample)
CN (1) CN1763617A (enExample)
TW (1) TW200629530A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053415A (zh) * 2009-10-29 2011-05-11 索尼公司 水平电场液晶显示设备
CN102130177A (zh) * 2010-01-15 2011-07-20 三星电子株式会社 晶体管、制造该晶体管的方法及包括该晶体管的电子装置
CN102184928A (zh) * 2010-12-29 2011-09-14 友达光电股份有限公司 显示元件及其制造方法
CN102237370A (zh) * 2011-04-18 2011-11-09 上海丽恒光微电子科技有限公司 Tft基板及其形成方法、显示装置
CN105161502A (zh) * 2015-08-24 2015-12-16 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置
CN107077807A (zh) * 2014-12-05 2017-08-18 凸版印刷株式会社 显示装置基板、显示装置基板的制造方法及使用其的显示装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
KR101915754B1 (ko) 2012-05-08 2018-11-07 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 표시 장치
WO2016130717A1 (en) * 2015-02-10 2016-08-18 University Of Houston System Scratch resistant flexible transparent electrodes and methods for fabricating ultrathin metal films as electrodes
KR102379192B1 (ko) * 2017-03-10 2022-03-29 삼성디스플레이 주식회사 표시 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330047B1 (en) * 1997-07-28 2001-12-11 Sharp Kabushiki Kaisha Liquid crystal display device and method for fabricating the same
JP2004172150A (ja) * 2002-11-15 2004-06-17 Nec Kagoshima Ltd 積層構造配線の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053415A (zh) * 2009-10-29 2011-05-11 索尼公司 水平电场液晶显示设备
CN102053415B (zh) * 2009-10-29 2013-07-17 株式会社日本显示器西 水平电场液晶显示设备
CN102130177A (zh) * 2010-01-15 2011-07-20 三星电子株式会社 晶体管、制造该晶体管的方法及包括该晶体管的电子装置
CN102130177B (zh) * 2010-01-15 2016-05-11 三星电子株式会社 晶体管、制造该晶体管的方法及包括该晶体管的电子装置
CN102184928A (zh) * 2010-12-29 2011-09-14 友达光电股份有限公司 显示元件及其制造方法
CN102237370A (zh) * 2011-04-18 2011-11-09 上海丽恒光微电子科技有限公司 Tft基板及其形成方法、显示装置
CN107077807A (zh) * 2014-12-05 2017-08-18 凸版印刷株式会社 显示装置基板、显示装置基板的制造方法及使用其的显示装置
CN105161502A (zh) * 2015-08-24 2015-12-16 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置
CN105161502B (zh) * 2015-08-24 2018-09-11 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置

Also Published As

Publication number Publication date
TW200629530A (en) 2006-08-16
KR20060035164A (ko) 2006-04-26
JP2006119564A (ja) 2006-05-11
US20060086979A1 (en) 2006-04-27

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Open date: 20060426