TW200629530A - Metal wiring, method of manufacturing the same, TFT substrate having the same, method of manufacturing TFT substrate and display device having ths same - Google Patents

Metal wiring, method of manufacturing the same, TFT substrate having the same, method of manufacturing TFT substrate and display device having ths same

Info

Publication number
TW200629530A
TW200629530A TW094137040A TW94137040A TW200629530A TW 200629530 A TW200629530 A TW 200629530A TW 094137040 A TW094137040 A TW 094137040A TW 94137040 A TW94137040 A TW 94137040A TW 200629530 A TW200629530 A TW 200629530A
Authority
TW
Taiwan
Prior art keywords
same
tft substrate
manufacturing
data line
scan line
Prior art date
Application number
TW094137040A
Other languages
English (en)
Inventor
Yang-Sun Kim
Taek-Hee Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200629530A publication Critical patent/TW200629530A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094137040A 2004-10-21 2005-10-21 Metal wiring, method of manufacturing the same, TFT substrate having the same, method of manufacturing TFT substrate and display device having ths same TW200629530A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040084526A KR20060035164A (ko) 2004-10-21 2004-10-21 금속 배선과 이의 제조 방법과, 이를 구비한 어레이 기판및 이의 제조 방법과, 이를 구비한 표시 패널

Publications (1)

Publication Number Publication Date
TW200629530A true TW200629530A (en) 2006-08-16

Family

ID=36205428

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137040A TW200629530A (en) 2004-10-21 2005-10-21 Metal wiring, method of manufacturing the same, TFT substrate having the same, method of manufacturing TFT substrate and display device having ths same

Country Status (5)

Country Link
US (1) US20060086979A1 (zh)
JP (1) JP2006119564A (zh)
KR (1) KR20060035164A (zh)
CN (1) CN1763617A (zh)
TW (1) TW200629530A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
JP2011095451A (ja) * 2009-10-29 2011-05-12 Sony Corp 横電界方式の液晶表示装置
KR101623956B1 (ko) * 2010-01-15 2016-05-24 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
CN102184928A (zh) * 2010-12-29 2011-09-14 友达光电股份有限公司 显示元件及其制造方法
CN102237370A (zh) * 2011-04-18 2011-11-09 上海丽恒光微电子科技有限公司 Tft基板及其形成方法、显示装置
KR101915754B1 (ko) 2012-05-08 2018-11-07 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 표시 장치
WO2016088488A1 (ja) * 2014-12-05 2016-06-09 凸版印刷株式会社 表示装置基板、表示装置基板の製造方法、及び、これを用いた表示装置
WO2016130717A1 (en) * 2015-02-10 2016-08-18 University Of Houston System Scratch resistant flexible transparent electrodes and methods for fabricating ultrathin metal films as electrodes
CN105161502B (zh) * 2015-08-24 2018-09-11 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置
KR102379192B1 (ko) * 2017-03-10 2022-03-29 삼성디스플레이 주식회사 표시 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330047B1 (en) * 1997-07-28 2001-12-11 Sharp Kabushiki Kaisha Liquid crystal display device and method for fabricating the same
JP2004172150A (ja) * 2002-11-15 2004-06-17 Nec Kagoshima Ltd 積層構造配線の製造方法

Also Published As

Publication number Publication date
KR20060035164A (ko) 2006-04-26
CN1763617A (zh) 2006-04-26
US20060086979A1 (en) 2006-04-27
JP2006119564A (ja) 2006-05-11

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