CN1759452A - 用于弱sram单元的检测 - Google Patents
用于弱sram单元的检测 Download PDFInfo
- Publication number
- CN1759452A CN1759452A CNA2004800065551A CN200480006555A CN1759452A CN 1759452 A CN1759452 A CN 1759452A CN A2004800065551 A CNA2004800065551 A CN A2004800065551A CN 200480006555 A CN200480006555 A CN 200480006555A CN 1759452 A CN1759452 A CN 1759452A
- Authority
- CN
- China
- Prior art keywords
- logic state
- sram
- bit line
- word line
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100633 | 2003-03-12 | ||
EP03100633.1 | 2003-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1759452A true CN1759452A (zh) | 2006-04-12 |
CN100437834C CN100437834C (zh) | 2008-11-26 |
Family
ID=32981919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800065551A Expired - Fee Related CN100437834C (zh) | 2003-03-12 | 2004-03-03 | 用于弱sram单元的检测装置和方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7200057B2 (zh) |
EP (1) | EP1606824B1 (zh) |
JP (1) | JP2006520511A (zh) |
KR (1) | KR101061080B1 (zh) |
CN (1) | CN100437834C (zh) |
AT (1) | ATE364231T1 (zh) |
DE (1) | DE602004006848T2 (zh) |
TW (1) | TW200428392A (zh) |
WO (1) | WO2004081948A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103871451A (zh) * | 2012-12-14 | 2014-06-18 | 辉达公司 | 减轻对长信号线的外部影响 |
CN107393595A (zh) * | 2016-05-17 | 2017-11-24 | 爱思开海力士有限公司 | 半导体存储器件及其弱单元检测方法 |
CN107492392A (zh) * | 2016-06-10 | 2017-12-19 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN111986719A (zh) * | 2020-09-10 | 2020-11-24 | 苏州兆芯半导体科技有限公司 | 电流确定方法 |
CN115641903A (zh) * | 2022-10-19 | 2023-01-24 | 深圳市紫光同创电子有限公司 | Fpga存储单元失效分析方法、装置、电子设备以及存储介质 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004081948A1 (en) * | 2003-03-12 | 2004-09-23 | Koninklijke Philips Electronics N.V. | Test for weak sram cells |
US7298659B1 (en) * | 2004-06-07 | 2007-11-20 | Virage Logic Corporation | Method and system for accelerated detection of weak bits in an SRAM memory device |
GB0426005D0 (en) * | 2004-11-26 | 2004-12-29 | Koninkl Philips Electronics Nv | Sram test method and sram test arrangement |
US20070025167A1 (en) * | 2005-07-27 | 2007-02-01 | Marco Ziegelmayer | Method for testing a memory device, test unit for testing a memory device and memory device |
JP4913861B2 (ja) | 2006-04-13 | 2012-04-11 | エヌエックスピー ビー ヴィ | 半導体デバイス識別子の生成方法および半導体デバイス |
US7613067B2 (en) * | 2006-10-20 | 2009-11-03 | Manoj Sachdev | Soft error robust static random access memory cells |
US7606092B2 (en) * | 2007-02-01 | 2009-10-20 | Analog Devices, Inc. | Testing for SRAM memory data retention |
JP4411443B2 (ja) * | 2007-03-31 | 2010-02-10 | 国立大学法人九州工業大学 | Sramメモリセルの評価方法及びsramメモリセルの評価プログラム |
US7480192B1 (en) * | 2007-04-06 | 2009-01-20 | Xilinx, Inc. | Pull-up voltage circuit |
US7646203B2 (en) * | 2007-07-16 | 2010-01-12 | United Microelectronics Corp. | Defect detection system with multilevel output capability and method thereof |
DE102008007029B4 (de) * | 2008-01-31 | 2014-07-03 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Betrieb einer elektronischen Schaltung mit körpergesteuertem Doppelkanaltransistor und SRAM-Zelle mit körpergesteuertem Doppelkanaltransistor |
US7715260B1 (en) | 2008-12-01 | 2010-05-11 | United Microelectronics Corp. | Operating voltage tuning method for static random access memory |
TWI423362B (zh) * | 2008-12-09 | 2014-01-11 | United Microelectronics Corp | 靜態隨機存取記憶體的操作電壓的調整方法 |
US8976574B2 (en) | 2013-03-13 | 2015-03-10 | Qualcomm Incorporated | Process corner sensor for bit-cells |
US9959912B2 (en) | 2016-02-02 | 2018-05-01 | Qualcomm Incorporated | Timed sense amplifier circuits and methods in a semiconductor memory |
US10950296B2 (en) * | 2018-07-16 | 2021-03-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Latch circuit formed from bit cell |
US12045509B2 (en) * | 2022-06-17 | 2024-07-23 | SanDisk Technologies, Inc. | Data storage device with weak bits handling |
CN115938456B (zh) * | 2023-03-09 | 2023-07-25 | 长鑫存储技术有限公司 | 半导体存储装置的测试方法、装置、设备及介质 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0756759B2 (ja) * | 1990-12-27 | 1995-06-14 | 株式会社東芝 | スタティック型半導体記憶装置 |
US5559745A (en) * | 1995-09-15 | 1996-09-24 | Intel Corporation | Static random access memory SRAM having weak write test circuit |
US6501692B1 (en) * | 2001-09-17 | 2002-12-31 | Cirrus Logic, Inc. | Circuit and method for stress testing a static random access memory (SRAM) device |
WO2004081948A1 (en) * | 2003-03-12 | 2004-09-23 | Koninklijke Philips Electronics N.V. | Test for weak sram cells |
KR100518579B1 (ko) * | 2003-06-05 | 2005-10-04 | 삼성전자주식회사 | 반도체 장치 및 그 테스트 방법 |
US7133319B2 (en) * | 2003-06-20 | 2006-11-07 | Hewlett-Packard Development Company, L.P. | Programmable weak write test mode (PWWTM) bias generation having logic high output default mode |
-
2004
- 2004-03-03 WO PCT/IB2004/050192 patent/WO2004081948A1/en active IP Right Grant
- 2004-03-03 JP JP2006506670A patent/JP2006520511A/ja active Pending
- 2004-03-03 CN CNB2004800065551A patent/CN100437834C/zh not_active Expired - Fee Related
- 2004-03-03 DE DE602004006848T patent/DE602004006848T2/de not_active Expired - Lifetime
- 2004-03-03 KR KR1020057016826A patent/KR101061080B1/ko not_active IP Right Cessation
- 2004-03-03 AT AT04716681T patent/ATE364231T1/de not_active IP Right Cessation
- 2004-03-03 EP EP04716681A patent/EP1606824B1/en not_active Expired - Lifetime
- 2004-03-03 US US10/548,340 patent/US7200057B2/en not_active Expired - Fee Related
- 2004-03-09 TW TW093106244A patent/TW200428392A/zh unknown
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103871451A (zh) * | 2012-12-14 | 2014-06-18 | 辉达公司 | 减轻对长信号线的外部影响 |
CN107393595A (zh) * | 2016-05-17 | 2017-11-24 | 爱思开海力士有限公司 | 半导体存储器件及其弱单元检测方法 |
CN107393595B (zh) * | 2016-05-17 | 2020-12-29 | 爱思开海力士有限公司 | 半导体存储器件及其弱单元检测方法 |
CN107492392A (zh) * | 2016-06-10 | 2017-12-19 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN107492392B (zh) * | 2016-06-10 | 2021-01-01 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN111986719A (zh) * | 2020-09-10 | 2020-11-24 | 苏州兆芯半导体科技有限公司 | 电流确定方法 |
CN111986719B (zh) * | 2020-09-10 | 2022-11-29 | 苏州兆芯半导体科技有限公司 | 电流确定方法 |
CN115641903A (zh) * | 2022-10-19 | 2023-01-24 | 深圳市紫光同创电子有限公司 | Fpga存储单元失效分析方法、装置、电子设备以及存储介质 |
WO2024082812A1 (zh) * | 2022-10-19 | 2024-04-25 | 深圳市紫光同创电子有限公司 | Fpga存储单元失效分析方法、装置、电子设备以及存储介质 |
CN115641903B (zh) * | 2022-10-19 | 2024-08-09 | 深圳市紫光同创电子有限公司 | Fpga存储单元失效分析方法、装置、电子设备以及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
EP1606824B1 (en) | 2007-06-06 |
JP2006520511A (ja) | 2006-09-07 |
US7200057B2 (en) | 2007-04-03 |
US20060187724A1 (en) | 2006-08-24 |
WO2004081948A1 (en) | 2004-09-23 |
KR101061080B1 (ko) | 2011-09-01 |
TW200428392A (en) | 2004-12-16 |
ATE364231T1 (de) | 2007-06-15 |
KR20050107786A (ko) | 2005-11-15 |
EP1606824A1 (en) | 2005-12-21 |
CN100437834C (zh) | 2008-11-26 |
DE602004006848T2 (de) | 2008-02-07 |
DE602004006848D1 (de) | 2007-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20071012 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071012 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KONINKL PHILIPS ELECTRONICS NV Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20111028 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111028 Address after: Delaware Patentee after: NXP BV Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20150303 |
|
EXPY | Termination of patent right or utility model |