CN1751386A - 具热塑材料制成下填料的电子组件及其制造方法 - Google Patents

具热塑材料制成下填料的电子组件及其制造方法 Download PDF

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CN1751386A
CN1751386A CNA2003801025133A CN200380102513A CN1751386A CN 1751386 A CN1751386 A CN 1751386A CN A2003801025133 A CNA2003801025133 A CN A2003801025133A CN 200380102513 A CN200380102513 A CN 200380102513A CN 1751386 A CN1751386 A CN 1751386A
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thermoplastic material
electronic building
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contact
building brick
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CN100449719C (zh
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M·鲍尔
C·比尔泽
G·奥纳
S·斯托伊克
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Infineon Technologies AG
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Abstract

本发明涉及一种电子组件及其制造方法，其中该组件(1)包含具有倒装芯片接点(3)的一半导体芯片(2)。这些接点(3)乃固定于重新接线基板(6)上，该重新接线基板(6)及该半导体芯片(2)间的空隙(7)乃填充热塑材料(8)。该热塑材料(8)的该玻璃化转变温度乃在该组件最大操作测试温度以上而在外部接点焊接材料熔化温度以下。

Description

具热塑材料制成下填料的电子组件及其制造方法
技术领域
本发明有关具有倒装芯片接点且被固定于重新接线基板之半导体芯片的电子组件及其制造方法。
背景技术
具有倒装芯片接点及重新接线基板的电子组件被封装于热设定塑料制成的塑料包装中。当外部接点被附着至该电子组件的重新接线基板上的外部接触焊接区，或当最终外部接点被焊接于电路载体时，即使某些这些电子组件的操作性针对约摄氏150度顶部操作测试温度及约摄氏负50度底部操作测试温度间的温度周期被事先成功测试，但其仍会非预期地故障。
本发明之一目的是明确说明电子组件及制造增加电子组件可靠性的方法。
此目的藉由附带权利要求主题来达成。有利发展可于附带权利要求中被找到。
发明内容
本发明提供具有一半导体芯片之一电子组件，其具有被固定至重新接线基板上的接触焊接区之其有源上侧上的倒装芯片接点。此固定可藉由焊接及/或使用导电黏胶而获得。藉由倒装芯片接点被形成于重新接线基板及半导体芯片间的空隙具有作为下填料的热塑材料。此被当作下填料之此热塑材料之玻璃化转变温度低于电子组件上之外部接点焊接材料的熔化温度。
该组件具有当焊接外部接点于外部接触焊接区或当焊接电子组件上的外部接点于电路载体上时，电子组件故障情况被降低的优点。当热塑材料被添加超过其玻璃化转变温度且于焊接操作期间于外部接点区域中软化，且于达到焊接温度时改变为液态时，所达成效应为耐塑料材料当作塑料封装化合物例中因汽相形成的压力被向下调整。该被软化热塑材料可塑性分解且不需破坏半导体芯片上的倒装芯片接点及重新接线基板上的接点连接焊接区间的接点来产出。因此，当焊接外部接点或当电路载体上的焊接故障率被降低。
然而所有例中，玻璃化转变温度及软化点视敷射面积而定处于介于摄氏70及150度间的电子组件最高操作测试温度以上。消费组件并不被如此辛苦地测试，且以低于消费组件为低的最大操作测试温度来测试，如操作测试期间周期性受到摄氏150度最大操作测试温度之汽车工程的电子组件。接着，被提供当作下填料之此热塑材料的玻璃化转变温度亦必须被选择对应较高。
此电子组件另一优点是因为当热塑材料被当作下填料时，湿度较高位准可被容许而不会破坏接点或组件结构，所以该封装不再必须于各焊接处理之前被预干来排除湿气。
被使用的热塑材料可为来自包含聚胺树脂，聚乙缩醛，聚碳酸酯，聚乙烯，聚丙烯，聚乙烯对苯二酸酯或其混合物之群组之物质。特别是藉由混合这些热塑材料，可设定预期软化温度范围及熔化温度范围。此确保热塑材料于最大操作测试温度具有相同强度，特别是热塑材料的玻璃化转变温度直到此点以上才达到。
相对于仅部分电子组件被加热且仅其部分可达到临界温度的焊接，针对操作测试，电子组件被完全暴露至可能为摄氏150度的最大操作测试温度。该温度下，热塑材料必须具有与室温下相同之一致性及强度。仅在可达到摄氏250度之更高外部接点焊接温度下，当作下填料之热塑材料具有可使电子组件，特别是半导体芯片的组件，倒装芯片接点及重新接线基板上的接触焊接区不受损害或破坏，或其互连不被中断的塑性顺从或液体特性。
包含半导体芯片及倒装芯片接点的塑料封装可具有相同于下填料的玻璃化转变温度的热塑材料。此具有塑料封装及下填料可被引进单转移模制步骤的优点。
其被引进之前，倒装芯片接点可被紧密固定于重新接线基板上的适当接触焊接区，特别是因为电子组件的发明性设计可促使封装被制造而不需半导体芯片被塑料薄膜或塑料层于其被其倒装芯片接点封装之前压印于重新接线基板上。
塑料封装亦可包含具有高于外部接点的焊接材料熔化温度的玻璃化转变温度的热塑材料。此例中，当特定部件到达焊接温度时，仅被当作下填料的热塑材料(其热塑材料是于低温时软化)软化或变成液体时才会产出。然而，此下填料的塑料产出足以使半导体芯片及重新接线基板间的连接不受到损害或破坏。此例中，需两连续转移模制处理来首先敷设两不同热塑材料当作下填料且接着当作塑料封装。
有利是，热塑材料可为摄氏200度及220度间温度范围的液态，该热塑材料充分顺从被补偿的水汽形成所产生的压力。此外，此温度范围明显地位于最大操作测试温度之上及外部接点焊接温度之下。
制造电子组件的方法具有以下方法步骤：首先，具有其上侧上的接触焊接区及其下侧上之外部接触焊接区的重新接线基板被制造。重新接线基板中，下侧上之外部接触焊接区经由穿孔及重新接线被连接至重新接线基板上侧上之接触焊接区。此外，使用倒装芯片技术的半导体芯片被制造具有倒装芯片接点于其有源上侧。
若重新接线基板及具有倒装芯片接点的半导体芯片可获得，则倒装芯片接点被放置于重新接线基板上且被电子连接至接触焊接区。最后，半导体芯片的有源上侧及重新接线基板上侧间的空隙可被填充热塑材料制成之下填料。
此方法具有半导体芯片及重新接线基板间的空隙填充并不涉及热设定塑料的使用，特别是当焊接外部接点或当焊接外部接点至电路载体时，可能损害或破坏湿气发生时半导体芯片及重新接线基板间连接的优点。
倒装芯片接点可于热塑材料被引进当作下填料之前使用导电黏胶来固定。因为此方法步骤甚至于下填料被引进之前即发生，所以坚固，可靠电子连接可藉由倒装芯片接点被提供至重新接线基板及重新接线基板上之外部接触焊接区。
下填料可使用分散方法被适当加热，其意指可以高压模具来免除。若塑料封装由相同于下填料的材料来制成，则塑料封装可与下填料同时被制造。此例中，有利地使用射出成型技术来施加热塑材料，其意指可以一步骤来下填及模制塑料封装。
热塑材料被引进重新接线基板上侧之前，其被加热来处理最大操作测试温度以上及外部接点焊接材料熔化温度以下的温度。较佳是，热塑材料于被施加至重新接线基板之前被加热至摄氏200度及220度间的温度。
附图说明
本发明现在将参考附图被更详细解释。
图1显示通过被放置于电路载体之电子组件之简单横断面。
图2显示通过电子组件临界部分的简单横断面。
图3显示通过被放置于电路载体之具有塑料封装之电子组件之简单横断面。
具体实施方式
图1显示通过被其外部接点10放置于用于电路载体12之电子组件1之简单横断面。电子组件1本身包含两主要组件，亦即半导体芯片2及重新接线基板6。
重新接线基板6本身具有五层。从其上侧13开始，该五层被交错向下至下侧15如下：上焊接抗蚀剂层19，上重新接线层20，电子绝缘核心板21，下重新接线层22及下焊接抗蚀剂层23。下焊接抗蚀剂层23覆盖重新接线基板6之下侧15一直到焊接球型式之外部接点10被焊接其上之外部接触焊接区13。外部接触焊接区14为下重新接线层22之部件，其藉由穿孔16被电子连接至上重新接线层20。上焊接抗蚀剂层19仅有上重新接线层20之接触焊接区5不接受焊接抗蚀剂。
半导体芯片2具有一有源上侧4及一无源反向侧24。有源上侧4具有被安置于其上可运载焊接球或块型式之倒装芯片接点3之接触焊接区18。电子组件1的两主要组件藉由半导体芯片2上之倒装芯片接点3及重新接线基板6之上重新接线层20上之接触焊接区5被电子互连。形成于半导体芯片2之有源上侧4及重新接线基板6之上侧13间之空隙7被填充热塑材料8。
此热塑材料8或热塑材料8混合物具有摄氏155度及250度间的玻璃化转变温度。当组装此类电子组件1及当添加此类电子组件1至电路载体12上侧时的临界相位为当外部接点10被加热至焊接温度时。
图2显示通过电子组件1临界部分的简单横断面。此临界部分为半导体芯片2之有源上侧4及重新接线基板6之上侧13间之空隙7。此空隙具有半导体芯片2上之接触焊接区18及重新接线基板6之上重新接线层20上之接触焊接区5间之倒装芯片接点3型式的永久连接。因为塑料是吸湿地，所以当具有中间层沉积时，其吸收湿气。
当焊接电子组件的外部接点时(图2不显示)，气泡25可形成及施加压力于藉由倒装芯片接点3被连接的重新接线基板6及半导体芯片2之上侧。填充空隙7由热塑材料8制成之下填料9可承受此压力，特别是因为其于焊接温度区域中为塑性顺从或液体，因此可减轻因此类气泡25所产生的压力。
倒装芯片接点3之电子组件被与重新接线基板6上的接触焊接区5隔离的风险被减轻。再者，如图1所示，当焊接外部接点至外部接触焊接区及当焊接电子组件至电路载体时，该电子连接被维持。
图3显示通过被放置于电路载体12的具有塑料封装11的电子组件1的简单横断面。具有相同于先前图标功能的组件藉由相同参考符号来辨识而不被单独讨论。
此电子组件1及图1所示的组件1间之差异是半导体芯片2之无源反向侧并非如图1中随意地存取，而被覆盖塑料封装11。图3所示本发明此实施例中，此塑料封装11包含相同于下填料9被形成自之热塑材料8。下填料9及塑料封装11以单转移模制步骤被放上。为了避免塑料封装11于焊接期间可能部分分解或熔化，塑料封装11可于焊接操作期间被某程度地冷却。

Claims (9)

1.一种制造电子组件的方法，其具有以下方法步骤：
提供一重新接线基板(6)，其上侧(4)具有接触焊接区(5)，
以倒装芯片技术提供半导体芯片(1)，其有源上侧(4)具有倒装芯片接点(3)，
施加并电连接该倒装芯片接点(3)至该重新接线基板(6)的该接触焊接区(5)，
用包含热塑材料(8)的下填料(9)实质填充在该半导体芯片(2)的该有源上侧(4)及该重新接线基板(6)的该上侧(13)之间的空隙(7)。
2.如权利要求1所述的方法，
其特征在于该倒装芯片接点(3)于该下填料(9)被引进前即先焊接至该接触焊接区(5)。
3.如权利要求1或2所述的方法，
其特征在于由于同时引进该下填料(9)，由该相同热塑材料制成之塑料封装(11)乃被施加来封装该半导体芯片(2)。
4.如前述权利要求之一所述的方法，
其特征在于该热塑材料(8)在被施加至该重新接线基板(6)前即先加热至外部接点(10)的该焊接材料熔化温度以下温度而为液态，较佳地是摄氏200度及220度间的温度。
5.如前述权利要求任一所述的方法，
其特征在于该热塑材料(8)使用分散技术或射出成型技术而施加为下填料(9)。
6.一种电子组件，具有一半导体芯片(2)，其有源上侧(4)具有被固定至重新接线基板(6)的接触焊接区(5)的倒装芯片接点(3)，在有该倒装芯片接点(3)的该重新接线基板(6)及该半导体芯片(2)间的空隙(7)，其具有玻璃化转变温度在该电子组件(1)的外部接点(10)焊接材料熔化温度以下而被当作下填料(9)的热塑材料(8)。
7.如权利要求6所述的电子组件，
其特征在于该热塑材料(8)为包含聚胺树脂，聚乙缩醛，聚碳酸酯，聚乙烯，聚丙烯，聚乙烯对苯二酸酯或其混合物的群组中的至少一物质。
8.如权利要求6或7所述的电子组件，
其特征在于用于该电子组件(1)的塑料封装(11)包含具有与该下填料(9)的玻璃化转变温度相同玻璃变换过渡的热塑材料(8)。
9.如前述权利要求任一所述的电子组件，
其特征在于该热塑材料(8)在摄氏200度至220度间为液态。
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