CN1732549A - 用于场发射用途的碳纳米管的金属化 - Google Patents
用于场发射用途的碳纳米管的金属化 Download PDFInfo
- Publication number
- CN1732549A CN1732549A CNA038082497A CN03808249A CN1732549A CN 1732549 A CN1732549 A CN 1732549A CN A038082497 A CNA038082497 A CN A038082497A CN 03808249 A CN03808249 A CN 03808249A CN 1732549 A CN1732549 A CN 1732549A
- Authority
- CN
- China
- Prior art keywords
- tube
- carbon nanotubes
- metallized
- carbon nano
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1644—Composition of the substrate porous substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Carbon And Carbon Compounds (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Chemically Coating (AREA)
Abstract
Description
Claims (39)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37206702P | 2002-04-12 | 2002-04-12 | |
US60/372,067 | 2002-04-12 | ||
US41724602P | 2002-10-09 | 2002-10-09 | |
US60/417,246 | 2002-10-09 | ||
US10/372,006 | 2003-02-21 | ||
US10/372,006 US20040018371A1 (en) | 2002-04-12 | 2003-02-21 | Metallization of carbon nanotubes for field emission applications |
US10/406,928 | 2003-04-04 | ||
US10/406,928 US6975063B2 (en) | 2002-04-12 | 2003-04-04 | Metallization of carbon nanotubes for field emission applications |
PCT/US2003/011053 WO2003087707A2 (en) | 2002-04-12 | 2003-04-11 | Metallization of carbon nanotubes for field emission applications |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1732549A true CN1732549A (zh) | 2006-02-08 |
CN1732549B CN1732549B (zh) | 2010-11-10 |
Family
ID=46123439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN038082497A Expired - Lifetime CN1732549B (zh) | 2002-04-12 | 2003-04-11 | 场发射器件阴极装置、其制造方法和含该装置的器件 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4727928B2 (zh) |
KR (1) | KR100836538B1 (zh) |
CN (1) | CN1732549B (zh) |
AT (1) | ATE453203T1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101105488B (zh) * | 2006-07-14 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 逸出功的测量方法 |
CN102568977A (zh) * | 2012-03-16 | 2012-07-11 | 福州大学 | 一种磁场辅助电泳沉积金属化碳纳米管阴极的制备方法 |
US8865251B2 (en) | 2008-09-12 | 2014-10-21 | Lg Chem, Ltd. | Metal nanobelt and method of manufacturing the same, and conductive ink composition and conductive film comprising the same |
CN105209660A (zh) * | 2013-04-21 | 2015-12-30 | 斯马特高科技术有限公司 | 涂覆碳纳米材料的方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006261108A (ja) * | 2005-02-17 | 2006-09-28 | Sonac Kk | 冷陰極電子源、その製造方法ならびに表示装置 |
KR100688860B1 (ko) * | 2005-08-08 | 2007-03-02 | 삼성전기주식회사 | 전계방출소자의 제조 방법 |
KR100749886B1 (ko) * | 2006-02-03 | 2007-08-21 | (주) 나노텍 | 탄소나노튜브를 이용한 발열체 |
JP4662877B2 (ja) * | 2006-03-29 | 2011-03-30 | 国立大学法人福井大学 | 複合材料およびその製造法 |
KR100781190B1 (ko) * | 2006-06-13 | 2007-11-30 | 인하대학교 산학협력단 | 유도전류를 이용한 탄소나노튜브 분리 시스템 및 그 방법 |
KR20080013366A (ko) * | 2006-08-08 | 2008-02-13 | 한국과학기술원 | 나노와이어의 정렬을 통한 전계방출 에미터 전극의제조방법 |
KR100795903B1 (ko) * | 2006-08-10 | 2008-01-21 | 세메스 주식회사 | 탄소나노튜브 포집 장치 및 그것을 사용한 탄소 나노 튜브생산 시스템 및 방법 |
KR101328765B1 (ko) * | 2006-12-29 | 2013-11-13 | 엘지디스플레이 주식회사 | 나노파우더 패턴형성방법 |
KR101281168B1 (ko) | 2007-01-05 | 2013-07-02 | 삼성전자주식회사 | 전계 방출 전극, 이의 제조 방법 및 이를 구비한 전계 방출소자 |
JP2009073692A (ja) * | 2007-09-20 | 2009-04-09 | Toyota Motor Corp | カーボンナノチューブ及びその製造方法 |
KR101078079B1 (ko) | 2008-12-10 | 2011-10-28 | 엘에스전선 주식회사 | 은 수식 탄소 나노튜브 함유 전도성 페이스트 조성물 |
JP5551898B2 (ja) * | 2009-06-30 | 2014-07-16 | 京セラドキュメントソリューションズ株式会社 | 加熱ベルトの製造方法 |
KR101724064B1 (ko) | 2010-02-18 | 2017-04-10 | 삼성전자주식회사 | 전도성 탄소나노튜브-금속 복합체 잉크 |
JP2012040664A (ja) * | 2010-08-23 | 2012-03-01 | Nitto Denko Corp | 繊維状柱状構造体集合体および粘着部材 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2546114B2 (ja) * | 1992-12-22 | 1996-10-23 | 日本電気株式会社 | 異物質内包カーボンナノチューブとその製造方法 |
US6630772B1 (en) * | 1998-09-21 | 2003-10-07 | Agere Systems Inc. | Device comprising carbon nanotube field emitter structure and process for forming device |
JP2000233911A (ja) * | 1999-02-12 | 2000-08-29 | Namiki Precision Jewel Co Ltd | カーボンナノチューブの加工方法 |
US6504292B1 (en) * | 1999-07-15 | 2003-01-07 | Agere Systems Inc. | Field emitting device comprising metallized nanostructures and method for making the same |
US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
JP2002056770A (ja) * | 2000-08-08 | 2002-02-22 | Futaba Corp | 電界放出カソード及びその製造方法 |
US6566983B2 (en) * | 2000-09-02 | 2003-05-20 | Lg Electronics Inc. | Saw filter using a carbon nanotube and method for manufacturing the same |
JP3573273B2 (ja) * | 2000-09-26 | 2004-10-06 | シャープ株式会社 | 電子放出素子、及びその製造方法 |
-
2003
- 2003-04-11 JP JP2003584609A patent/JP4727928B2/ja not_active Expired - Fee Related
- 2003-04-11 AT AT03746707T patent/ATE453203T1/de not_active IP Right Cessation
- 2003-04-11 KR KR1020047014088A patent/KR100836538B1/ko active IP Right Grant
- 2003-04-11 CN CN038082497A patent/CN1732549B/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101105488B (zh) * | 2006-07-14 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 逸出功的测量方法 |
US8865251B2 (en) | 2008-09-12 | 2014-10-21 | Lg Chem, Ltd. | Metal nanobelt and method of manufacturing the same, and conductive ink composition and conductive film comprising the same |
CN102568977A (zh) * | 2012-03-16 | 2012-07-11 | 福州大学 | 一种磁场辅助电泳沉积金属化碳纳米管阴极的制备方法 |
CN102568977B (zh) * | 2012-03-16 | 2015-02-04 | 福州大学 | 一种磁场辅助电泳沉积金属化碳纳米管阴极的制备方法 |
CN105209660A (zh) * | 2013-04-21 | 2015-12-30 | 斯马特高科技术有限公司 | 涂覆碳纳米材料的方法 |
CN105209660B (zh) * | 2013-04-21 | 2018-04-13 | 深圳市深瑞墨烯科技有限公司 | 涂覆碳纳米材料的方法 |
US10156015B2 (en) | 2013-04-21 | 2018-12-18 | Shenzhen Shen Rui Graphene Technology Co., Ltd. | Method for coating of carbon nanomaterials |
Also Published As
Publication number | Publication date |
---|---|
JP2005532915A (ja) | 2005-11-04 |
JP4727928B2 (ja) | 2011-07-20 |
CN1732549B (zh) | 2010-11-10 |
KR100836538B1 (ko) | 2008-06-10 |
ATE453203T1 (de) | 2010-01-15 |
KR20040101280A (ko) | 2004-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: APPLY NANOTECHNOLOGY CO., LTD. Effective date: 20130304 Owner name: APPLY NANOTECHNOLOGY CO., LTD. Free format text: FORMER OWNER: NANO PROPRIETARY INC. Effective date: 20130304 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130304 Address after: Texas, USA Patentee after: Applied nanotechnology Holdings Ltd. Address before: Texas, USA Patentee before: NANO-PROPRIETARY, Inc. Effective date of registration: 20130304 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Texas, USA Patentee before: Applied nanotechnology Holdings Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20101110 |