TW200823949A - Method of making field emission electron source - Google Patents

Method of making field emission electron source Download PDF

Info

Publication number
TW200823949A
TW200823949A TW95142699A TW95142699A TW200823949A TW 200823949 A TW200823949 A TW 200823949A TW 95142699 A TW95142699 A TW 95142699A TW 95142699 A TW95142699 A TW 95142699A TW 200823949 A TW200823949 A TW 200823949A
Authority
TW
Taiwan
Prior art keywords
carbon nanotube
field emission
conductive
slurry
electron source
Prior art date
Application number
TW95142699A
Other languages
Chinese (zh)
Other versions
TWI321802B (en
Inventor
Yang Wei
Lin Xiao
Feng Zhu
Jie Tang
Liang Liu
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW95142699A priority Critical patent/TWI321802B/en
Publication of TW200823949A publication Critical patent/TW200823949A/en
Application granted granted Critical
Publication of TWI321802B publication Critical patent/TWI321802B/en

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The present invention is related to a method of making a field emission electron source. The method includes the steps of: providing a cathode conductive element; a certain amount of a first slurry containing conductive particles and glass particles and a second slurry containing nanotubes; forming the first slurry on a surface of the cathode conductive element and heating the first slurry and, thus obtaining a conductive slurry layer on the cathode conductive element; forming the second slurry on a surface of the nanotube slurry layer and heating the second slurry, to result in a nanotube slurry layer on the conductive slurry layer; and drying and then baking the cathode conductive element with the nanotube slurry layer and the conductive slurry layer at a temperature of about 300 DEG C to 600 DEG C to soften or melt the glass particles, in order to form an conductive layer including a glass matrix and the conductive particles dispersed therein and an electron emission layer including the nanotubes dispersed and embedded in the glass matrix.

Description

200823949 九、發明說明: 【發明所屬之技術領域】 • 本發明係涉及一種場發射電子源之製造方法,尤其涉 辱一種奈米碳管場發射電子源之製造方法。 【先前技術】200823949 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of fabricating a field emission electron source, and more particularly to a method of fabricating a carbon nanotube field emission electron source. [Prior Art]

按,奈米碳管材料具有可傳輸極大電流密度、電流極 穩定、使用壽命長等特性,因而其被廣泛應用於顯微鏡、χ 射線管、微波管、CRT電子槍、太陽能轉化裝置、平板印 刷裝置、平面顯示裝置等設備中用以場發射電子源的發射 端。 傳統的由奈米碳管作爲發射端的場發射電子源一般至 少包括-導電基體及形成於導電基體頂部上作爲發射端的 維奈米碳官。奈米碳管形成於導電基體上之方法主要包 括機械方法及原位线法。其巾,機械方法係藉由原子力 顯微鏡操縱合成的奈米碳f,將合成後的奈米碳管用導電 膠固定於導電基體上,該種方法雖程式簡單,惟不易操作 ^車乂低3,藉由該方法得到的場發射電子源中的奈 未石反官係采用導電膠粘覆於導φ 太WHO &基體上,於使用過程中, 接觸狀態較差,不易充分發揮奈 木碳官的場發射性能。 干丁 由斗Γί线法_先於導電基虹鍍金屬催化劑,後夢 由化學氣相沈積、電孤放電 /後错 ,上生長-_管==法= /、電基體的電接觸良好。惟’藉由該方法得到的場發射 8 200823949 喊米碳管解電基體的結合能力㈣,於使用 =,'中〜+碳管料脫落,從㈣致場魏電子源損壞。 .如用原位生長法製造場發射電子源的生産成本亦較高。 有馨於此,確有必要提供一種成本較低、效古且 ^於操作的場發射電子社製造方法,藉由該方法^的 ==電子源中的奈米碳管與導電基合緊密且電性連 【發明内容】 之制ΙΓ藉由實施舰—步詳細說明—種場發射電子源 之錢方法’該製造方法成本較低、胁操歧且有 ^念同時’由該方法製造之場發射電子源中的奈米碳管 與V電基體結合緊密且電性連接良好。 種场發射電子源之製造方法,該製造方法係主 括以下步驟: =至少-陰極導電體,製備―”的奈輕 及導電漿料; ^ =極導電體上塗敷導電漿料,將導電_加 一導電漿料層; Λ 於導電漿料層上塗敷奈米碳管裝料,將奈米碳管嘴料 加熱,從祕導·料層上形成—奈料管漿料層;以及 將形成有導電⑽層及奈米碳管漿料相導雪體於 〜·C條件下諸烘乾無敵秘導紐表面形成 導電層及奈米碳管電子發射層,進而得到場發射電子源。 與先前技術相比較,本發明場發射電子源之製造方法 9 200823949 中藉由雙層漿料形成導電層及奈米碳管電子發射層,可實 =低成本之大面積製造,具有較高的效率,易於操作;同 時,由該方法製造之場發射電子源令導電層與奈米碳管電 f發射層結合牢固且電性連接良好。 【實施方式】 下面將結合附圖對本發明場發射電子源之製造方法作 進一步之詳細說明。 請參閱圖卜本發明場發射電子源之製造方法大致包 括以下幾個步驟: 步驟提供至少-陰極導電體、製備一定量的奈 米碳管漿料及導電漿料。 其中,陰極導電體可由金屬導電材料、摻雜質的半導 體材料、碳化物、導電氧化物或者·物製成。該導電體 的形狀可根據場發射電子源實際應用的產品而決定,如: 虽場發射電子源應用於平面顯示裝置時,陰極導電體可爲 平板狀結構;當場發射電子源應胳場發賴明燈管時, 陰極導電體可爲餘結構或絲狀結構;#場發射電子源應 用於場發射照龍泡時,陰極導電體可爲球狀結構。〜 奈米碳管漿料中主要包含有機载體以及分散於有機戴 體内的奈轉管’該奈祕的雜綠A致包 下步驟: 製備有機載體;該有機載體爲由作爲溶儀松油醇、 作爲增塑_少量鄰苯n 丁 |旨和作爲穩定劑的少量 乙基纖維素形成的混合劑;有機載體之製備過程爲:首先 200823949 於油浴加熱及授拌的條件下將乙基纖維素溶解到松油醇 中;加入鄰苯二甲酸二丁酯於同樣油浴加熱的條件下持續 攪拌一定時間即可得到有機載體。其中,優選地,松油醇、 乙基纖維素及鄰苯二曱酸二丁酯於混合劑中的質量百分比 分別約爲90%、5%以及5% ;加熱溫度爲80〜11(TC,最優地 加熱溫度爲100°c ;持續攪拌時間爲10〜25小時,最優地 持續攪拌時間爲24小時。 將粉末狀奈米碳管於二氯乙烷溶液中用破碎機分散後 ® 再進行超聲分散形成奈米碳管溶液;其中,奈米碳管可預 先通過化學氣相沈積法、電弧放電法或鐳射蒸發法等傳統 技術製備,奈米碳管的長度優選爲1〜100微米,直徑優選 爲1〜100納米。奈米碳管與二氯乙烷的比例優選爲:每兩 克奈米碳管需要約500毫升的二氯乙烷。破碎機分散的時 間優選爲5〜30分鐘’最優時間爲20分鐘;超聲分散的時 間優選爲10〜40分鐘,最優時間爲30分鐘。 • 過濾奈米碳管溶液;其中,奈米碳管溶液可選用篩網 過渡’最優地,選用400目的篩網過濾奈米碳管溶液從而 可得到具有優選直徑及長度的奈米碳管的溶液。 將奈米碳管溶液加入有機載體中同時亦利用超聲充分 分散;其中’溶液中的奈米碳管與有機載體的質量比優選 爲15 : 1 ;超聲分散的時間優選爲3〇分鐘。 最後’於水浴條件下加熱混有奈米碳管溶液的有機載 辦 一 ’二氣乙烷在加熱下完全蒸發;其中,加熱溫度優選爲 90°C。 11 200823949 另,導電漿料中含有一定量的玻璃微粒及導電金屬微 粒,其中,玻璃微粒選用溶點爲35〇〜_ ^直搜優選爲卟⑽納米。導電金屬微粒由導電材破料璃製 二如銀或乳化銦錫,其可預先採用球磨機進行球磨 徑優選爲〇. HG微米。導電漿料的形成係 及玻璃微粒於有機载體中進行充分混合而形成。According to the characteristics, the carbon nanotube material has the characteristics of high current density, extremely stable current and long service life, so it is widely used in microscopes, X-ray tubes, microwave tubes, CRT electron guns, solar energy conversion devices, lithographic printing devices, A transmitting end for field emission electron source in a device such as a flat display device. A conventional field emission electron source having a carbon nanotube as a emitting end generally includes at least a conductive substrate and a Vennike carbon official formed on the top of the conductive substrate as a emitting end. The method of forming a carbon nanotube on a conductive substrate mainly includes a mechanical method and an in-situ line method. In the towel, the mechanical method is to fix the synthesized carbon nanotubes by atomic force microscopy, and the synthesized carbon nanotubes are fixed on the conductive substrate with a conductive adhesive. The method is simple, but it is not easy to operate. The Neiwushi ruling system in the field emission electron source obtained by the method is coated with conductive adhesive on the φ too WHO & base body, and the contact state is poor during use, and it is difficult to fully exert the field of the Nike carbon officer. Launch performance. Dry Ding by the Γ Γ 线 line method _ prior to the conductive base rainbow metallization catalyst, after the dream by chemical vapor deposition, electric orphan discharge / after the error, the upper growth -_ tube = = method = /, the electrical contact of the electrical substrate is good. However, the field emission obtained by this method 8 200823949 shouted the carbon nanotubes to decompose the matrix's ability to bond (four), in use =, 'medium ~ + carbon tube material shedding, from the (four) to the field Wei electron source damage. The production cost of manufacturing a field emission electron source by in-situ growth is also high. In this case, it is indeed necessary to provide a low-cost, efficient and well-operated field emission electronic society manufacturing method, by which the carbon nanotubes in the electron source are tightly coupled with the conductive group. Electrical connection [The content of the invention] by the implementation of the ship-step detailed description - the method of the field emission electron source money 'this manufacturing method is low cost, ambiguous and has the same experience at the same time 'made by this method The carbon nanotubes in the electron-emitting source are tightly coupled and electrically connected to the V-electrode. A method for manufacturing a field emission electron source, the manufacturing method comprising the following steps: = at least - a cathode conductor, preparing a "light" and a conductive paste; ^ = coating a conductive paste on the pole conductor to conduct electricity _ Adding a conductive paste layer; 涂敷 coating a carbon nanotube charge on the conductive paste layer, heating the carbon nanotube material, forming a layer of the slurry layer from the secret layer; and forming The conductive (10) layer and the carbon nanotube slurry phase guide snow body are formed under the condition of ~·C to form a conductive layer and a carbon nanotube electron emission layer on the surface of the invisible secret guide, thereby obtaining a field emission electron source. Compared with the technology, the field emission electron source manufacturing method 9 200823949 of the present invention forms a conductive layer and a carbon nanotube electron emission layer by a two-layer slurry, which can be manufactured at a low cost and large area, and has high efficiency. At the same time, the field emission electron source manufactured by the method enables the conductive layer to be firmly bonded and electrically connected to the carbon nanotube electric f-emitting layer. [Embodiment] The field emission electron source of the present invention will be described below with reference to the accompanying drawings. Manufacturing method The method for manufacturing the field emission electron source of the present invention generally comprises the following steps: Step of providing at least a cathode conductor, preparing a certain amount of carbon nanotube slurry and a conductive paste. The cathode electrical conductor may be made of a metal conductive material, a doped semiconductor material, a carbide, a conductive oxide or a material. The shape of the electrical conductor may be determined according to the actual application of the field emission electron source, such as: When the electron source is applied to the flat display device, the cathode conductor may be a flat structure; when the field emission electron source should be applied to the lamp tube, the cathode conductor may be a residual structure or a filament structure; #field emission electron source is applied to the field When the illuminating bubble is emitted, the cathode conductor may have a spherical structure. ~ The carbon nanotube slurry mainly contains an organic carrier and a naphthalene tube dispersed in the organic wearing body. Step: preparing an organic carrier; the organic carrier is a mixture of a small amount of ethyl cellulose as a solvent, terpineol, as a plasticizer, a small amount of phthalic acid, and a stabilizer The preparation process of the organic carrier is as follows: firstly, the ethyl cellulose is dissolved in terpineol under the condition of heating and mixing in an oil bath; and the addition of dibutyl phthalate in the same oil bath is continued. The organic carrier can be obtained by stirring for a certain period of time. Among them, preferably, the mass percentages of terpineol, ethyl cellulose and dibutyl phthalate in the mixture are about 90%, 5% and 5%, respectively; The heating temperature is 80 to 11 (TC, the optimum heating temperature is 100 ° C; the continuous stirring time is 10 to 25 hours, and the optimum stirring time is 24 hours. The powdery carbon nanotubes are dichloroethane. The solution is dispersed in a crusher and then ultrasonically dispersed to form a carbon nanotube solution; wherein the carbon nanotubes can be prepared by conventional techniques such as chemical vapor deposition, arc discharge or laser evaporation, and the carbon nanotubes are prepared in advance. The length is preferably from 1 to 100 μm and the diameter is preferably from 1 to 100 nm. The ratio of carbon nanotubes to dichloroethane is preferably about 500 ml of dichloroethane per two grams of carbon nanotubes. The time during which the crusher is dispersed is preferably 5 to 30 minutes' optimal time is 20 minutes; the time for ultrasonic dispersion is preferably 10 to 40 minutes, and the optimum time is 30 minutes. • Filtering the carbon nanotube solution; wherein the carbon nanotube solution can be screened with a mesh transition. 'Optimally, a 400 mesh sieve is used to filter the carbon nanotube solution to obtain a carbon nanotube having a preferred diameter and length. Solution. The carbon nanotube solution is added to the organic vehicle while being sufficiently dispersed by ultrasound; wherein the mass ratio of the carbon nanotubes to the organic vehicle in the solution is preferably 15:1; the time of ultrasonic dispersion is preferably 3 minutes. Finally, the organic carrier-dioxane mixed with the carbon nanotube solution is heated under water bath conditions to completely evaporate under heating; wherein the heating temperature is preferably 90 °C. 11 200823949 In addition, the conductive paste contains a certain amount of glass particles and conductive metal particles, wherein the glass particles have a melting point of 35 〇 _ _ ^ directly searched preferably 卟 (10) nanometers. The conductive metal particles are made of a conductive material such as silver or emulsified indium tin, which may be ball milled in advance using a ball mill, preferably 〇. HG micron. The formation of the conductive paste and the formation of the glass fine particles in an organic vehicle are sufficiently mixed.

^要爲由作爲溶綱松油醇、作爲增關的少量鄰苯二甲 酸-丁 i旨及作爲敎_少量乙基纖維素形成的混合劑。 ,合過程優選爲60IC下混合3〜5小時。爲了更好的分 散導電金屬微粒及朗絲’可進—步使祕功率的超聲 波對含有導電金屬微粒及賴絲的有機輔進行超聲波 震蕩’後再對其進行離心處理。 步驟(二),於陰極導電體上塗敷導電聚料 料加熱形成-導·觸。 ^電水 其中,塗敷導電漿料的過程應於潔淨的環境内進行, 優選地,環境内的灰塵度小於1〇〇〇mg/m3。塗敷完成後,優 選用熱風將形成於陰極導電體上的導電漿料吹幹以形成導 電漿料層。該導電漿料層的厚度優選爲幾微米至幾十微米。 步驟(二)’於導電漿料層上塗敷奈米碳管漿料,將奈 米碳管漿料加熱從而於導電漿料層上形成一奈米碳管漿料 層0 塗敷奈米碳管漿料的過程亦應於潔淨的環境内進行, 優選地,環境内的灰塵度小於1000mg/m3。塗敷完成後,優 選用熱風將形成於導電漿料層上的奈米碳管聚料吹幹以形 12 200823949 成奈米碳管漿料層。 步驟(四)’將形成有導電漿料層及奈米碳管漿料層的 .導電體於餅下進行烘乾與域從而於導電體 .的表面上形成導電層及奈米碳管電子發射層,進而得到場 發射電子源。 每 其中,烘乾與焙燒於真空環境下進行或者於烘乾與焙 燒過程中通入惰性氣體或氮氣加以保護從而防止烘乾與= # 燒時發生氧化反應。烘乾之目的係在於使導電漿料層^ 米碳管漿料層中的有機載體從導電體上揮發。焙燒之目= 係在於使導電漿料層中的玻璃微粒熔融從而將導電金屬微 粒及奈米碳管粘結固定於導電體上從而形成導電層及奈米 碳管電子發射層,其中的奈米碳管通過導電金屬微粒二導 電體電性連接。另’溶融的玻璃可_整體的熱膨脹係數 防止所形成的導電層產生裂紋或發生斷裂。烘乾與焙燒之 過程可進-步包括:先於真空環境或通入情性氣體或氮氣 • 加以保護的環境下加熱至一定溫度保溫-段時間,優選加 熱至約32(TC Μ呆溫約20分鐘;後升溫至一定溫度再^ -段時間,優選升溫至約43(TC,保溫約3〇分鐘;最$ 至室溫。 爲進一步增強電子發射層的場發射特性,經過烘乾和 培燒過程後,可對電子發射層的表面進行摩擦或者採^膠 帶枯結的方法將電子發射層表面稀鬆的奈米碳管去除,剩 下的奈米碳管與導電金屬微粒及玻璃層結合牢固且與襯底 表面大致垂直(如圖2所示),該種稀疏且基本直立的奈= 13 200823949 碳管有效降低了奈米碳管之間的場屏蔽作用,從而使本實 施例的場發射電子源具備良好的場發射性能。 •在貝驗中對本實&例獲得的場發射電子源的場發射 /生貝進订了 Λ際測試。具體步驟為:於直徑約爲3⑼微米、 長度約爲10厘米的鎳絲表面形成奈米碳管電子發射層以 形成場發射電子源,將該場發射電子源置於内壁塗有透明 導電層及縣層且餘約爲25毫米、長度約爲1G厘米的 瞻纟璃g之轴心位置’測1得到的電壓—電流曲線圖如圖3 彳示從圖3中可以看出,於4⑽伏的電壓條件下,該場 發=電子源的電流爲190毫安培,對應的電流密度爲· 宅安培/平方厘米,因而本實施例得到的場發射電子源的場 發射性能較好。 综上所述,本發明確已符合發明專利之要件,遂依法 提出專利中請。惟’以上所述者僅為本發明之較佳實施例, 自不能以此限制本案之中請專利範圍。舉凡熟悉本案技藝 • j人士援依本發明之精神所作之等效修飾或變化,皆應涵 蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1係本發明實施例場發射電子源之製造方法的流程 示意圖。 圖2係由本發明實施例場發射電子源之製造方法製得 的場發射電子源的掃描電鏡(Scanning 廿⑽It is intended to be a mixture of phthalic acid as a sulfonate, a small amount of phthalic acid as a weighting agent, and a small amount of ethyl cellulose. The mixing process is preferably mixed for 3 to 5 hours at 60 IC. In order to better disperse the conductive metal particles and the Langer's, the ultrasonic wave of the secret power can be ultrasonically oscillated to the organic auxiliary containing the conductive metal particles and the lysate, and then centrifuged. In step (2), a conductive poly-material is coated on the cathode electrical conductor to form a conductive-conductive contact. ^Electric water wherein the process of applying the conductive paste should be carried out in a clean environment, preferably, the degree of dust in the environment is less than 1 〇〇〇 mg/m3. After the coating is completed, the conductive paste formed on the cathode conductor is preferably blown dry by hot air to form a conductive paste layer. The thickness of the conductive paste layer is preferably from several micrometers to several tens of micrometers. Step (2) applying a carbon nanotube slurry on the conductive slurry layer, heating the nano carbon tube slurry to form a carbon nanotube slurry layer on the conductive paste layer 0 coating the carbon nanotube The process of the slurry should also be carried out in a clean environment. Preferably, the degree of dust in the environment is less than 1000 mg/m3. After the coating is completed, the carbon nanotubes formed on the conductive paste layer are preferably blown dry by hot air to form a layer of 200823949 carbon nanotube slurry. Step (4) 'The conductive body formed with the conductive paste layer and the carbon nanotube slurry layer is dried under the cake and the domain is formed to form a conductive layer on the surface of the conductor and the electron emission of the carbon nanotube The layer, in turn, obtains a field emission electron source. Each of the drying and baking is carried out in a vacuum environment or an inert gas or nitrogen is supplied during the drying and baking to protect the drying reaction from the drying reaction. The purpose of drying is to volatilize the organic vehicle in the layer of the conductive paste layer from the conductor. The purpose of roasting is to melt the glass particles in the conductive paste layer to bond the conductive metal particles and the carbon nanotubes to the conductor to form a conductive layer and a carbon nanotube electron-emitting layer, wherein the nano-particles are formed. The carbon tubes are electrically connected by the conductive metal particles and the two conductors. Further, the molten glass can have a thermal expansion coefficient as a whole to prevent cracking or cracking of the formed conductive layer. The drying and roasting process may include: heating in a vacuum environment or in a protected atmosphere or a nitrogen atmosphere to a certain temperature for a period of time, preferably to about 32 (TC Μ 温 temperature 20 minutes; after heating to a certain temperature for a further period of time, preferably to about 43 (TC, holding for about 3 〇 minutes; most to room temperature. To further enhance the field emission characteristics of the electron-emitting layer, after drying and cultivating After the burning process, the surface of the electron-emitting layer may be rubbed or the surface of the electron-emitting layer may be removed by a method of drying the tape, and the remaining carbon nanotubes are firmly bonded to the conductive metal particles and the glass layer. And substantially perpendicular to the surface of the substrate (as shown in Figure 2), the sparse and substantially upright n = 13 200823949 carbon tube effectively reduces the field shielding between the carbon nanotubes, thereby enabling the field emission of this embodiment The electron source has good field emission performance. • In the Bayesian test, the field emission/birth of the field emission electron source obtained by the real and the example was tested. The specific steps are: about 3 (9) micrometers in diameter and about the length. For 1 The surface of the 0 cm nickel wire forms a carbon nanotube electron emission layer to form a field emission electron source, and the field emission electron source is placed on the inner wall with a transparent conductive layer and a county layer with a balance of about 25 mm and a length of about 1 Gcm. The voltage-current curve obtained from the measurement of the axial position of the glazing g is shown in Fig. 3. It can be seen from Fig. 3 that at a voltage of 4 (10) volts, the current of the field = electron source is 190. Milliamperes, the corresponding current density is · ampere amperes per square centimeter, so the field emission electron source obtained in this embodiment has better field emission performance. In summary, the present invention has indeed met the requirements of the invention patent, and is proposed according to law. In the patent, please note that the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent in this case. Those skilled in the art will be equivalent to the spirit of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic flow chart of a method for fabricating a field emission electron source according to an embodiment of the present invention. FIG. 2 is a field emission electron source according to an embodiment of the present invention. Scanning electron microscope (Scanning 廿(10) for the field emission electron source produced by the manufacturing method

Microscope,SEM)照片。 圖3係由本發明實施例場發射電子源之製造方法製得 200823949 的場發射電子源於實際應用中測量得到的場發射性質曲線 圖。 .【主要元件符號說明】Microscope, SEM) photo. Fig. 3 is a graph showing the field emission properties measured by the field emission electron source of 200823949 produced by the field emission electron source of the embodiment of the present invention. [Main component symbol description]

1515

Claims (1)

200823949 種場發射電子源之製造方法,主要包括p 陰極麵、製備漿 、申請專利範圍 1· 一 料及導電漿料; 漿料加熱形 於陰極導電體上塗敷導電漿料,將導電 成一導電漿料層; 將奈米碳管漿 管漿料層;以200823949 The manufacturing method of the field emission electron source mainly comprises a p-cathode surface, a preparation slurry, a patent application scope, a material and a conductive paste; the slurry is heated to apply a conductive paste on the cathode conductor to electrically conduct a conductive paste. Layer; a layer of carbon nanotube slurry; 於導電聚料層上塗敷奈米碳管漿料, 料加熱從而於導電漿料層上形成一奈米碳 及 人 將形成有導電漿料層及奈米碳管漿料層 條件下進行烘乾触燒從祕導電體的表面 上形成導㈣及奈米碳管電子發射層,進而得到 電子源。 a 2. 如申請專職圍第丨項所述之場發射電子源之製造方 法,其中’所述之奈米碳管聚料中包含有機触及分散 於有機載體_奈米碳管,奈米碳管的長度爲㈠ 米,直徑爲1〜100納米。 敘 3. 如申請專利範1]第2項所述之場發射電子源之製造方 法,其中,所述之奈米碳管漿料的製備過程包括: 製備有機載體,該有機載體爲由作爲溶劑的松油 醇、作爲增塑劑的少量鄰苯二曱酸二丁酯以及作爲穩定 劑的少量乙基纖維素形成的混合劑; ’、心疋 將粉末狀奈米碳管於二氯乙烷中用破碎機分散後再 進行超聲分散形成奈米碳管溶液; 16 200823949 過濾奈米碳管溶液; 將奈米碳管溶液加入有機載體中同時利用超聲充分 ▲分散;以及 • 於水浴條件下加熱混有奈米碳管溶液的有機載體, ,一氯1乙焼^於加熱下完全蒸發。 4·如申請專利範圍第3項所述之場發射電子源之製造方 法,其中,所述之有機載體的製備過程爲: 於油浴80〜litre及解的條件下將乙基纖維素溶 解到松油醇中;及 加入鄰苯二甲酸二丁酯於油浴8〇〜11(rc的條件下 持續攪拌10〜25小時即可得到有機載體。 5·、如申請專利·第4項所述之場發射電子源之製造方 /、中所述之混合劑中松油醇、乙基纖維素及鄰苯 -甲酸二丁g旨的質量百分比分別爲繁、⑽和所述 之加熱概度爲100 C ;所述之持續攪拌時間爲24小時。 法=月專利範圍第3項所述之場發射電子源之製造方 =其中,所述之奈米碳管與所述之二氯乙烧的比例優 &爲··每兩克奈米好需要5GG毫升的二氯乙烧;所述 ^碎機分散的2Q分鐘;所述之奈祕管溶液中 米碳管與所述的有機載體的質量比爲15 : 1 ;所述 超聲分散的時間優選爲3〇分鐘 之水浴加熱溫度 4 9(Tc。 法:明專利範圍帛3項所述之場發射電子源之製造方 /、中所述之導電漿料中含有玻璃微粒及導電金屬 17 200823949 :拉,所述之導電漿料的形成係將導電金 微粒於由松油醇、鄰1一田驗一丁此 _ 的右胸^ 1和乙基纖维素形成 /的有機載體中於6〇ICT混合3〜5小時形成。 8法如申^專娜_ 7韻狀·射伟之製造方 法、中,所述之破璃微粒選用低炫點玻 350〜600°C,直秒爲〗η 1ηπ “上 點爲 、為 鮮,所述之導電金屬微粒 由导电材料製成,直徑爲0· 1〜10微米。 9.如申請專利顧第3項所述之場發射好源之製造方 法’其中,所述之塗敷㈣漿料及所述之錄 其 漿料的過程於灰塵度小於1000呢/1113的條件下進τ、反吕 ι〇·如申^專利翻第3销狀場發㈣句之製造方 法,其中,所述之烘乾與焙燒的過程包括·· 於真空環境或通人雜氣體錢氣加叫護 下加熱至320°C保溫20分鐘; 升溫至430°C再保溫30分鐘;以及 降至室溫。 Π法如申^專利翻第3項所述之場發射電子源之製造方 步包括·對形成之奈米石炭管電子發射層 之表面進行摩擦或者用膠帶枯結的方法 面稀鬆的奈米碳管去除。 包丁知衣 18Applying a carbon nanotube slurry on the conductive polymer layer, heating to form a nano carbon on the conductive paste layer, and drying under conditions in which a layer of conductive paste and a layer of carbon nanotubes are formed The contact is formed by forming a conductive (IV) and a carbon nanotube electron-emitting layer from the surface of the secret conductor, thereby obtaining an electron source. a 2. For the manufacturing method of the field emission electron source described in the full-time sub-paragraph, wherein the nanocarbon tube aggregate contains organically dispersed and dispersed in an organic carrier, a carbon nanotube, a carbon nanotube The length is (1) m and the diameter is 1~100 nm. The method for manufacturing a field emission electron source according to claim 2, wherein the preparation process of the carbon nanotube slurry comprises: preparing an organic carrier, wherein the organic carrier is used as a solvent a mixture of terpineol, a small amount of dibutyl phthalate as a plasticizer, and a small amount of ethylcellulose as a stabilizer; ', heart sputum powdered carbon nanotubes in dichloroethane Dispersing in a crusher and then ultrasonically dispersing to form a carbon nanotube solution; 16 200823949 Filtering the carbon nanotube solution; adding the carbon nanotube solution to the organic vehicle while fully utilizing ultrasonic ▲ dispersion; and • heating under water bath conditions The organic vehicle mixed with the carbon nanotube solution was completely evaporated under heating. 4. The method for producing a field emission electron source according to claim 3, wherein the organic carrier is prepared by dissolving ethyl cellulose in an oil bath under 80~litre and solution conditions. In the terpineol; and adding dibutyl phthalate in an oil bath 8〇~11 (continuously stirring for 10 to 25 hours under rc conditions to obtain an organic vehicle. 5. As described in the patent application, item 4 The mass percentage of terpineol, ethyl cellulose and o-benzene-formic acid dibutyl g in the mixture of the field emission electron source, and the mixture described above are respectively, (10) and the heating probability is 100. C; the continuous stirring time is 24 hours. The manufacturer of the field emission electron source described in Item 3 of the method of the invention is the ratio of the carbon nanotube to the dichloroethane.优········································································· The ratio is 15:1; the time of the ultrasonic dispersion is preferably 3 minutes of water bath heating temperature of 4 9 (Tc. The conductive paste described in the field of the field emission electron source described in the third paragraph of the patent contains the glass particles and the conductive metal 17 200823949: the conductive paste is formed by the conductive gold particles. It is formed by terpineol, o- 1 field test, and the right chest ^ 1 and ethyl cellulose formed / organic carrier in 6 〇 ICT mixed for 3 to 5 hours. 8 法如申^专娜娜_ In the method of manufacturing rhyme and radiance, the glass particles are selected from low-light glass 350 to 600 ° C, and the straight seconds are η η η π "the upper point is, fresh, the conductive metal particles are The conductive material is made of a diameter of 0·1 to 10 μm. 9. The manufacturing method of the field emission source according to claim 3, wherein the coating (4) slurry and the recording thereof are The process of the slurry is carried out under the condition that the degree of dust is less than 1000/1113, and the manufacturing method of the third pin-shaped field (four) sentence, wherein the drying and roasting are performed, The process includes: heating in a vacuum environment or gas and gas to a temperature of 320 ° C for 20 minutes; heating to 43 The temperature is further maintained at 0 ° C for 30 minutes; and is lowered to room temperature. The method of manufacturing the field emission electron source described in claim 3 includes the formation of the surface of the electron emission layer of the formed carbon nanotube tube. Rubbing or loosening the surface with a tape to remove the loose carbon nanotubes.
TW95142699A 2006-11-17 2006-11-17 Method of making field emission electron source TWI321802B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95142699A TWI321802B (en) 2006-11-17 2006-11-17 Method of making field emission electron source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95142699A TWI321802B (en) 2006-11-17 2006-11-17 Method of making field emission electron source

Publications (2)

Publication Number Publication Date
TW200823949A true TW200823949A (en) 2008-06-01
TWI321802B TWI321802B (en) 2010-03-11

Family

ID=44771367

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95142699A TWI321802B (en) 2006-11-17 2006-11-17 Method of making field emission electron source

Country Status (1)

Country Link
TW (1) TWI321802B (en)

Also Published As

Publication number Publication date
TWI321802B (en) 2010-03-11

Similar Documents

Publication Publication Date Title
US20030044608A1 (en) Nanowire, method for producing the nanowire, nanonetwork using the nanowires, method for producing the nanonetwork, carbon structure using the nanowire, and electronic device using the nanowire
CN101451262A (en) Methods and devices for electrophoretic deposition of a uniform carbon nanotube composite film
TWI337204B (en)
JP2011040402A (en) Method of manufacturing field-emission emitter electrode using aligned carbon nanotubes
CN101188179B (en) Making method for field emission electron source
JP2012214342A (en) Carbon nanotube nanohorn conjugate, and manufacturing method and use of the same
CN100573777C (en) Field emitting electronic source and manufacture method thereof
TW388902B (en) Annealed carbon soot field emitters and field emitter cathodes made therefrom
CN101079356B (en) Method for fabricating field emitter electrode using array of carbon nanotubes
US20100133983A1 (en) Method for manufacturing a field emitter electrode using the array of nanowires
TW200823949A (en) Method of making field emission electron source
JP7282424B2 (en) Carbon nanotube (CNT) paste emitter, manufacturing method thereof and X-ray tube device using same
Zhu et al. Superior integrated field emission cathode with ultralow turn‐on field and high stability based on SiC nanocone arrays
TWI309055B (en) Method for making emission source having carbon nanotube
KR100757099B1 (en) Method of preparing a carbon nanotube having high dispersibility
TWI309428B (en) Emission source having carbon nanotube
TWI307907B (en) Field emission electron source and method for making the same
TWI327734B (en) Method of making transparent conductive film
JP4554260B2 (en) Expanded carbon fiber, method for producing the same, field emission device including the same, and field emission display
TWI321806B (en) Method for making a field emission cathode
TWI327735B (en) Anode device and method for making the same
TWI360830B (en) Method for making thermionic electron source
KR100676467B1 (en) A method for fabrication of carbon nanotube field emitter using the sol-gel coating and nano-fissure formation technique
TW200905712A (en) Field emission cathode and fabricating method thereof
KR101151353B1 (en) Fabrication method of needle-shape field emission-type electron emitter and field emission-type electron emitter thereby