CN1708836A - 外延生长方法以及外延生长用衬底 - Google Patents
外延生长方法以及外延生长用衬底 Download PDFInfo
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- CN1708836A CN1708836A CNA038255286A CN03825528A CN1708836A CN 1708836 A CN1708836 A CN 1708836A CN A038255286 A CNA038255286 A CN A038255286A CN 03825528 A CN03825528 A CN 03825528A CN 1708836 A CN1708836 A CN 1708836A
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- Prior art keywords
- substrate
- growth
- compound semiconductor
- epitaxial growth
- semiconductor layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 150000001875 compounds Chemical class 0.000 claims abstract description 46
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 24
- 230000002159 abnormal effect Effects 0.000 description 22
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 15
- 230000002950 deficient Effects 0.000 description 15
- 229910052742 iron Inorganic materials 0.000 description 12
- 229910052717 sulfur Inorganic materials 0.000 description 12
- 239000011593 sulfur Substances 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 230000007547 defect Effects 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241001012508 Carpiodes cyprinus Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
掺杂剂 | 位错密度 | 倾斜角度(°) | InGaAs膜厚 | 异常形态 | 小丘状缺陷 | 台阶状缺陷 | |
1 | 硫黄 | <500 | 0.000 | 2.5 | 无 | 无 | 无 |
2 | 硫黄 | <500 | 0.025 | 2.5 | 无 | 无 | 无 |
3 | 硫黄 | <500 | 0.032 | 0.3 | 无 | 无 | 无 |
4 | 硫黄 | <500 | 0.032 | 0.45 | 无 | 无 | 无 |
5 | 硫黄 | <500 | 0.032 | 1.0 | 无 | 无 | |
6 | 硫黄 | <500 | 0.032 | 2.5 | 无 | 无 | |
7 | 硫黄 | <500 | 0.035 | 2.5 | 无 | 无 | |
8 | 硫黄 | <500 | 0.070 | 2.5 | 无 | 无 | 无 |
9 | 硫黄 | <500 | 0.100 | 2.5 | 无 | 无 | 无 |
10 | 硫黄 | <500 | 0.150 | 2.5 | 无 | 无 | 无 |
11 | 硫黄 | <500 | 0.200 | 2.5 | 无 | 无 | 无 |
12 | 硫黄 | <500 | 0.300 | 2.5 | 无 | 无 | |
13 | 锡 | 5000 | 0.000 | 2.5 | 无 | 无 | |
14 | 锡 | 5000 | 0.020 | 2.5 | 无 | 无 | |
15 | 锡 | 5000 | 0.035 | 2.5 | 无 | ||
16 | 锡 | 5000 | 0.070 | 2.5 | 无 | 无 | 无 |
17 | 锡 | 5000 | 0.100 | 2.5 | 无 | 无 | 无 |
18 | 锡 | 5000 | 0.150 | 2.5 | 无 | 无 | 无 |
19 | 锡 | 5000 | 0.200 | 2.5 | 无 | 无 | 无 |
20 | 铁 | 20000 | 0.020 | 2.5 | 无 | 无 | |
21 | 铁 | 20000 | 0.028 | 2.5 | 无 | 无 | |
22 | 铁 | 20000 | 0.035 | 0.3 | 无 | 无 | |
23 | 铁 | 20000 | 0.035 | 0.45 | 无 | 无 | |
24 | 铁 | 20000 | 0.035 | 1.0 | 无 | ||
25 | 铁 | 20000 | 0.035 | 2.5 | 无 | ||
26 | 铁 | 20000 | 0.100 | 2.5 | 无 | 无 | 无 |
27 | 铁 | 20000 | 0.150 | 2.5 | 无 | 无 | 无 |
28 | 铁 | 20000 | 0.200 | 2.5 | 无 | 无 | 无 |
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002350704 | 2002-12-03 | ||
JP350704/2002 | 2002-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1708836A true CN1708836A (zh) | 2005-12-14 |
CN100401482C CN100401482C (zh) | 2008-07-09 |
Family
ID=32463114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038255286A Expired - Lifetime CN100401482C (zh) | 2002-12-03 | 2003-05-14 | 外延生长方法以及外延生长用衬底 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7338902B2 (zh) |
EP (1) | EP1569269B1 (zh) |
JP (1) | JP4657724B2 (zh) |
KR (1) | KR100952650B1 (zh) |
CN (1) | CN100401482C (zh) |
CA (1) | CA2505631C (zh) |
DE (1) | DE60335287D1 (zh) |
WO (1) | WO2004051725A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI402896B (zh) * | 2006-02-02 | 2013-07-21 | Nippon Mining Co | Substrate semiconductor growth substrate and epitaxial growth method |
FR2921200B1 (fr) * | 2007-09-18 | 2009-12-18 | Centre Nat Rech Scient | Heterostructures semi-conductrices monolithiques epitaxiees et leur procede de fabrication |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0692278B2 (ja) * | 1989-03-09 | 1994-11-16 | 株式会社ジャパンエナジー | エピタキシャル成長方法 |
JP2750331B2 (ja) | 1992-04-23 | 1998-05-13 | 株式会社ジャパンエナジー | エピタキシャル成長用基板およびエピタキシャル成長方法 |
JP3129112B2 (ja) * | 1994-09-08 | 2001-01-29 | 住友電気工業株式会社 | 化合物半導体エピタキシャル成長方法とそのためのInP基板 |
JPH08330236A (ja) | 1995-05-30 | 1996-12-13 | Furukawa Electric Co Ltd:The | 有機金属気相成長法 |
-
2003
- 2003-05-14 KR KR1020057009830A patent/KR100952650B1/ko active IP Right Grant
- 2003-05-14 WO PCT/JP2003/005987 patent/WO2004051725A1/ja active Application Filing
- 2003-05-14 CN CNB038255286A patent/CN100401482C/zh not_active Expired - Lifetime
- 2003-05-14 JP JP2004556817A patent/JP4657724B2/ja not_active Expired - Lifetime
- 2003-05-14 CA CA2505631A patent/CA2505631C/en not_active Expired - Lifetime
- 2003-05-14 US US10/534,695 patent/US7338902B2/en not_active Expired - Lifetime
- 2003-05-14 EP EP03723368A patent/EP1569269B1/en not_active Expired - Lifetime
- 2003-05-14 DE DE60335287T patent/DE60335287D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPWO2004051725A1 (ja) | 2006-04-06 |
KR100952650B1 (ko) | 2010-04-13 |
DE60335287D1 (de) | 2011-01-20 |
JP4657724B2 (ja) | 2011-03-23 |
WO2004051725A1 (ja) | 2004-06-17 |
EP1569269B1 (en) | 2010-12-08 |
EP1569269A4 (en) | 2007-10-24 |
CA2505631C (en) | 2012-02-28 |
CA2505631A1 (en) | 2004-06-17 |
US7338902B2 (en) | 2008-03-04 |
CN100401482C (zh) | 2008-07-09 |
EP1569269A1 (en) | 2005-08-31 |
US20060012010A1 (en) | 2006-01-19 |
KR20050085234A (ko) | 2005-08-29 |
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GR01 | Patent grant | ||
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Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
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Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
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